JP2016526254A - イオン注入均一性を制御するための装置及び技術 - Google Patents

イオン注入均一性を制御するための装置及び技術 Download PDF

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Publication number
JP2016526254A
JP2016526254A JP2016512064A JP2016512064A JP2016526254A JP 2016526254 A JP2016526254 A JP 2016526254A JP 2016512064 A JP2016512064 A JP 2016512064A JP 2016512064 A JP2016512064 A JP 2016512064A JP 2016526254 A JP2016526254 A JP 2016526254A
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Japan
Prior art keywords
ion
ion beam
along
beam current
height
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JP2016512064A
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English (en)
Japanese (ja)
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JP2016526254A5 (enExample
Inventor
エス トドロフ スタニスラフ
エス トドロフ スタニスラフ
エム ギャンメル ジョージ
エム ギャンメル ジョージ
アレン スプレンクル リチャード
アレン スプレンクル リチャード
イー ハシー ノーマン
イー ハシー ノーマン
シンクレア フランク
シンクレア フランク
チャン シュヨンウー
チャン シュヨンウー
シー オルソン ジョセフ
シー オルソン ジョセフ
ロジャー ティンバーレイク デイヴィッド
ロジャー ティンバーレイク デイヴィッド
ティー デッカー−ルッケ カート
ティー デッカー−ルッケ カート
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド, ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド filed Critical ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
Publication of JP2016526254A publication Critical patent/JP2016526254A/ja
Publication of JP2016526254A5 publication Critical patent/JP2016526254A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2016512064A 2013-05-03 2014-05-02 イオン注入均一性を制御するための装置及び技術 Pending JP2016526254A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361819080P 2013-05-03 2013-05-03
US61/819,080 2013-05-03
US14/037,218 2013-09-25
US14/037,218 US9006692B2 (en) 2013-05-03 2013-09-25 Apparatus and techniques for controlling ion implantation uniformity
PCT/US2014/036551 WO2014179674A1 (en) 2013-05-03 2014-05-02 Apparatus and techniques for controlling ion implantation uniformity

Publications (2)

Publication Number Publication Date
JP2016526254A true JP2016526254A (ja) 2016-09-01
JP2016526254A5 JP2016526254A5 (enExample) 2017-01-12

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016512064A Pending JP2016526254A (ja) 2013-05-03 2014-05-02 イオン注入均一性を制御するための装置及び技術
JP2016512063A Active JP6379182B2 (ja) 2013-05-03 2014-05-02 イオン注入均一性を制御するための装置及び技術

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016512063A Active JP6379182B2 (ja) 2013-05-03 2014-05-02 イオン注入均一性を制御するための装置及び技術

Country Status (6)

Country Link
US (2) US9006692B2 (enExample)
JP (2) JP2016526254A (enExample)
KR (2) KR101677226B1 (enExample)
CN (2) CN105264633B (enExample)
TW (2) TWI564927B (enExample)
WO (2) WO2014179672A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6517520B2 (ja) * 2015-01-27 2019-05-22 ラピスセミコンダクタ株式会社 監視装置、イオン注入装置、及び監視方法
US9396903B1 (en) * 2015-02-06 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control ion beam current
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US10395889B2 (en) * 2016-09-07 2019-08-27 Axcelis Technologies, Inc. In situ beam current monitoring and control in scanned ion implantation systems
US10431421B2 (en) * 2017-11-03 2019-10-01 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques for beam mapping in ion beam system
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
CN111830553B (zh) * 2019-04-16 2022-10-25 中芯国际集成电路制造(上海)有限公司 离子束均匀度检测装置及检测方法
JP7286420B2 (ja) * 2019-05-31 2023-06-05 株式会社アルバック イオン注入装置
US11264205B2 (en) * 2019-12-06 2022-03-01 Applied Materials, Inc. Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates
KR102544486B1 (ko) * 2020-04-07 2023-06-16 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 주입 시스템
US20250323013A1 (en) * 2024-04-12 2025-10-16 Applied Materials, Inc. Detection of Space Charge Effect During Ion Implantation
CN120353191A (zh) * 2025-04-16 2025-07-22 深圳奉天实业有限公司 用于fib设备的离子束能量自适应调控方法及系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492351A (ja) * 1990-08-07 1992-03-25 Tel Varian Ltd イオン注入装置
JP2005502174A (ja) * 2001-08-30 2005-01-20 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入器を調整する方法および装置
US20080073550A1 (en) * 2006-06-29 2008-03-27 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for beam density measurement in two dimensions
JP2011086643A (ja) * 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置
JP2012525678A (ja) * 2009-04-28 2012-10-22 アクセリス テクノロジーズ， インコーポレイテッド 不利な条件下であっても均一な量の注入を実施するシステムおよび方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
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US6323497B1 (en) 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US6781141B2 (en) * 2002-10-29 2004-08-24 International Business Machines Corporation Method and structure for detection and measurement of electrical and mechanical resonance associated with an E-beam lithography tool
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US7423277B2 (en) 2006-03-14 2008-09-09 Axcelis Technologies, Inc. Ion beam monitoring in an ion implanter using an imaging device
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7663125B2 (en) 2006-06-09 2010-02-16 Varian Semiconductor Equipment Associates, Inc. Ion beam current uniformity monitor, ion implanter and related method
CN101467227A (zh) * 2006-06-09 2009-06-24 瓦里安半导体设备公司 离子束电流均匀度监控器、离子注入机以及其方法
US7755066B2 (en) * 2008-03-28 2010-07-13 Varian Semiconductor Equipment Associates, Inc. Techniques for improved uniformity tuning in an ion implanter system
US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492351A (ja) * 1990-08-07 1992-03-25 Tel Varian Ltd イオン注入装置
JP2005502174A (ja) * 2001-08-30 2005-01-20 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入器を調整する方法および装置
US20080073550A1 (en) * 2006-06-29 2008-03-27 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for beam density measurement in two dimensions
JP2012525678A (ja) * 2009-04-28 2012-10-22 アクセリス テクノロジーズ， インコーポレイテッド 不利な条件下であっても均一な量の注入を実施するシステムおよび方法
JP2011086643A (ja) * 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置

Also Published As

Publication number Publication date
TW201501168A (zh) 2015-01-01
KR20160005085A (ko) 2016-01-13
US9006692B2 (en) 2015-04-14
KR20160003258A (ko) 2016-01-08
TWI564927B (zh) 2017-01-01
KR101677225B1 (ko) 2016-11-17
US8853653B1 (en) 2014-10-07
TWI563533B (en) 2016-12-21
WO2014179672A1 (en) 2014-11-06
CN105264633B (zh) 2018-02-02
CN105264634A (zh) 2016-01-20
US20140326179A1 (en) 2014-11-06
WO2014179674A1 (en) 2014-11-06
JP6379182B2 (ja) 2018-08-29
CN105264634B (zh) 2017-03-22
KR101677226B1 (ko) 2016-11-29
JP2016526253A (ja) 2016-09-01
TW201503213A (zh) 2015-01-16
CN105264633A (zh) 2016-01-20

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