CN105264633B - 离子植入机与用于控制其中离子束的系统 - Google Patents

离子植入机与用于控制其中离子束的系统 Download PDF

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Publication number
CN105264633B
CN105264633B CN201480031930.1A CN201480031930A CN105264633B CN 105264633 B CN105264633 B CN 105264633B CN 201480031930 A CN201480031930 A CN 201480031930A CN 105264633 B CN105264633 B CN 105264633B
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China
Prior art keywords
ion
ion beam
frequency
adjustment
change
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CN201480031930.1A
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English (en)
Chinese (zh)
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CN105264633A (zh
Inventor
斯坦尼斯拉夫·S·托多罗夫
乔治·M·葛梅尔
理查·艾伦·斯普林克
诺曼·E·赫西
法兰克·辛克莱
常胜武
约瑟·C·欧尔森
大卫·罗杰·汀布莱克
库尔·T·岱可-路克
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN105264633A publication Critical patent/CN105264633A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN201480031930.1A 2013-05-03 2014-05-02 离子植入机与用于控制其中离子束的系统 Active CN105264633B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361819080P 2013-05-03 2013-05-03
US61/819,080 2013-05-03
US14/037,207 2013-09-25
US14/037,207 US8853653B1 (en) 2013-05-03 2013-09-25 Apparatus and techniques for controlling ion implantation uniformity
PCT/US2014/036549 WO2014179672A1 (en) 2013-05-03 2014-05-02 Apparatus and techniques for controlling ion implantation uniformity

Publications (2)

Publication Number Publication Date
CN105264633A CN105264633A (zh) 2016-01-20
CN105264633B true CN105264633B (zh) 2018-02-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480031930.1A Active CN105264633B (zh) 2013-05-03 2014-05-02 离子植入机与用于控制其中离子束的系统
CN201480032406.6A Active CN105264634B (zh) 2013-05-03 2014-05-02 离子植入机与控制其中离子束的系统

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201480032406.6A Active CN105264634B (zh) 2013-05-03 2014-05-02 离子植入机与控制其中离子束的系统

Country Status (6)

Country Link
US (2) US9006692B2 (enExample)
JP (2) JP2016526254A (enExample)
KR (2) KR101677226B1 (enExample)
CN (2) CN105264633B (enExample)
TW (2) TWI564927B (enExample)
WO (2) WO2014179672A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6517520B2 (ja) * 2015-01-27 2019-05-22 ラピスセミコンダクタ株式会社 監視装置、イオン注入装置、及び監視方法
US9396903B1 (en) * 2015-02-06 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control ion beam current
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US10395889B2 (en) * 2016-09-07 2019-08-27 Axcelis Technologies, Inc. In situ beam current monitoring and control in scanned ion implantation systems
US10431421B2 (en) * 2017-11-03 2019-10-01 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques for beam mapping in ion beam system
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
CN111830553B (zh) * 2019-04-16 2022-10-25 中芯国际集成电路制造(上海)有限公司 离子束均匀度检测装置及检测方法
JP7286420B2 (ja) * 2019-05-31 2023-06-05 株式会社アルバック イオン注入装置
US11264205B2 (en) * 2019-12-06 2022-03-01 Applied Materials, Inc. Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates
KR102544486B1 (ko) * 2020-04-07 2023-06-16 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 주입 시스템
US20250323013A1 (en) * 2024-04-12 2025-10-16 Applied Materials, Inc. Detection of Space Charge Effect During Ion Implantation
CN120353191A (zh) * 2025-04-16 2025-07-22 深圳奉天实业有限公司 用于fib设备的离子束能量自适应调控方法及系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101467227A (zh) * 2006-06-09 2009-06-24 瓦里安半导体设备公司 离子束电流均匀度监控器、离子注入机以及其方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492351A (ja) * 1990-08-07 1992-03-25 Tel Varian Ltd イオン注入装置
US6323497B1 (en) 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US7282721B2 (en) * 2001-08-30 2007-10-16 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for tuning ion implanters
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US6781141B2 (en) * 2002-10-29 2004-08-24 International Business Machines Corporation Method and structure for detection and measurement of electrical and mechanical resonance associated with an E-beam lithography tool
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US7423277B2 (en) 2006-03-14 2008-09-09 Axcelis Technologies, Inc. Ion beam monitoring in an ion implanter using an imaging device
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7663125B2 (en) 2006-06-09 2010-02-16 Varian Semiconductor Equipment Associates, Inc. Ion beam current uniformity monitor, ion implanter and related method
US7453070B2 (en) * 2006-06-29 2008-11-18 Varian Semiconductor Associates, Inc. Methods and apparatus for beam density measurement in two dimensions
US7755066B2 (en) * 2008-03-28 2010-07-13 Varian Semiconductor Equipment Associates, Inc. Techniques for improved uniformity tuning in an ion implanter system
US8071964B2 (en) 2008-05-01 2011-12-06 Axcelis Technologies, Inc. System and method of performing uniform dose implantation under adverse conditions
US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
JP2011086643A (ja) * 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101467227A (zh) * 2006-06-09 2009-06-24 瓦里安半导体设备公司 离子束电流均匀度监控器、离子注入机以及其方法

Also Published As

Publication number Publication date
JP2016526254A (ja) 2016-09-01
TW201501168A (zh) 2015-01-01
KR20160005085A (ko) 2016-01-13
US9006692B2 (en) 2015-04-14
KR20160003258A (ko) 2016-01-08
TWI564927B (zh) 2017-01-01
KR101677225B1 (ko) 2016-11-17
US8853653B1 (en) 2014-10-07
TWI563533B (en) 2016-12-21
WO2014179672A1 (en) 2014-11-06
CN105264634A (zh) 2016-01-20
US20140326179A1 (en) 2014-11-06
WO2014179674A1 (en) 2014-11-06
JP6379182B2 (ja) 2018-08-29
CN105264634B (zh) 2017-03-22
KR101677226B1 (ko) 2016-11-29
JP2016526253A (ja) 2016-09-01
TW201503213A (zh) 2015-01-16
CN105264633A (zh) 2016-01-20

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