JP2018506135A5 - - Google Patents

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Publication number
JP2018506135A5
JP2018506135A5 JP2017531339A JP2017531339A JP2018506135A5 JP 2018506135 A5 JP2018506135 A5 JP 2018506135A5 JP 2017531339 A JP2017531339 A JP 2017531339A JP 2017531339 A JP2017531339 A JP 2017531339A JP 2018506135 A5 JP2018506135 A5 JP 2018506135A5
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JP
Japan
Prior art keywords
ion beam
frequency
scanned
ion
scanning
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JP2017531339A
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English (en)
Japanese (ja)
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JP2018506135A (ja
JP6779880B2 (ja
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Priority claimed from PCT/US2015/067722 external-priority patent/WO2016106423A1/en
Publication of JP2018506135A publication Critical patent/JP2018506135A/ja
Publication of JP2018506135A5 publication Critical patent/JP2018506135A5/ja
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Publication of JP6779880B2 publication Critical patent/JP6779880B2/ja
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JP2017531339A 2014-12-26 2015-12-28 走査ビーム注入器のためのビームプロファイリング速度の向上 Active JP6779880B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462096963P 2014-12-26 2014-12-26
US62/096,963 2014-12-26
PCT/US2015/067722 WO2016106423A1 (en) 2014-12-26 2015-12-28 Beam profiling speed enhancement for scanned beam implanters

Publications (3)

Publication Number Publication Date
JP2018506135A JP2018506135A (ja) 2018-03-01
JP2018506135A5 true JP2018506135A5 (enExample) 2020-06-11
JP6779880B2 JP6779880B2 (ja) 2020-11-04

Family

ID=55315701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017531339A Active JP6779880B2 (ja) 2014-12-26 2015-12-28 走査ビーム注入器のためのビームプロファイリング速度の向上

Country Status (6)

Country Link
US (1) US10483086B2 (enExample)
JP (1) JP6779880B2 (enExample)
KR (1) KR102517466B1 (enExample)
CN (1) CN107210177B (enExample)
TW (1) TWI686839B (enExample)
WO (1) WO2016106423A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US11646175B2 (en) * 2019-02-15 2023-05-09 Axcelis Technologies, Inc. Method of mixing upstream and downstream current measurements for inference of the beam current at the bend of an optical element for realtime dose control
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US6710359B2 (en) 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
US7323700B1 (en) * 2001-04-02 2008-01-29 Applied Materials, Inc. Method and system for controlling beam scanning in an ion implantation device
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
US7064340B1 (en) * 2004-12-15 2006-06-20 Axcelis Technologies, Inc. Method and apparatus for ion beam profiling
US7358510B2 (en) * 2006-03-27 2008-04-15 Varian Semiconductor Equipment Associates, Inc. Ion implanter with variable scan frequency
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US8421039B2 (en) * 2011-03-31 2013-04-16 Axcelis Technologies, Inc. Method and apparatus for improved uniformity control with dynamic beam shaping
US8581204B2 (en) * 2011-09-16 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for monitoring ion implantation
JP5767983B2 (ja) * 2012-01-27 2015-08-26 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
JP2014022347A (ja) * 2012-07-24 2014-02-03 Sen Corp イオン注入方法およびイオン注入装置

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