CN107210177B - 用于扫描束注入机的束轮廓确定速度提升 - Google Patents

用于扫描束注入机的束轮廓确定速度提升 Download PDF

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Publication number
CN107210177B
CN107210177B CN201580071116.7A CN201580071116A CN107210177B CN 107210177 B CN107210177 B CN 107210177B CN 201580071116 A CN201580071116 A CN 201580071116A CN 107210177 B CN107210177 B CN 107210177B
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China
Prior art keywords
ion beam
frequency
scanned
ion
scanning
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CN201580071116.7A
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English (en)
Chinese (zh)
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CN107210177A (zh
Inventor
安迪·雷
爱德华·C·爱斯纳
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication of CN107210177A publication Critical patent/CN107210177A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN201580071116.7A 2014-12-26 2015-12-28 用于扫描束注入机的束轮廓确定速度提升 Active CN107210177B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462096963P 2014-12-26 2014-12-26
US62/096,963 2014-12-26
PCT/US2015/067722 WO2016106423A1 (en) 2014-12-26 2015-12-28 Beam profiling speed enhancement for scanned beam implanters

Publications (2)

Publication Number Publication Date
CN107210177A CN107210177A (zh) 2017-09-26
CN107210177B true CN107210177B (zh) 2020-06-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580071116.7A Active CN107210177B (zh) 2014-12-26 2015-12-28 用于扫描束注入机的束轮廓确定速度提升

Country Status (6)

Country Link
US (1) US10483086B2 (enExample)
JP (1) JP6779880B2 (enExample)
KR (1) KR102517466B1 (enExample)
CN (1) CN107210177B (enExample)
TW (1) TWI686839B (enExample)
WO (1) WO2016106423A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US11646175B2 (en) * 2019-02-15 2023-05-09 Axcelis Technologies, Inc. Method of mixing upstream and downstream current measurements for inference of the beam current at the bend of an optical element for realtime dose control
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US6710359B2 (en) 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
US7323700B1 (en) * 2001-04-02 2008-01-29 Applied Materials, Inc. Method and system for controlling beam scanning in an ion implantation device
GB2409926B (en) * 2004-01-06 2006-11-29 Applied Materials Inc Ion beam monitoring arrangement
US7064340B1 (en) * 2004-12-15 2006-06-20 Axcelis Technologies, Inc. Method and apparatus for ion beam profiling
US7358510B2 (en) * 2006-03-27 2008-04-15 Varian Semiconductor Equipment Associates, Inc. Ion implanter with variable scan frequency
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US8421039B2 (en) * 2011-03-31 2013-04-16 Axcelis Technologies, Inc. Method and apparatus for improved uniformity control with dynamic beam shaping
US8581204B2 (en) * 2011-09-16 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for monitoring ion implantation
JP5767983B2 (ja) * 2012-01-27 2015-08-26 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
JP2014022347A (ja) * 2012-07-24 2014-02-03 Sen Corp イオン注入方法およびイオン注入装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Also Published As

Publication number Publication date
KR102517466B1 (ko) 2023-03-31
TWI686839B (zh) 2020-03-01
US10483086B2 (en) 2019-11-19
JP2018506135A (ja) 2018-03-01
WO2016106423A1 (en) 2016-06-30
KR20170098815A (ko) 2017-08-30
JP6779880B2 (ja) 2020-11-04
CN107210177A (zh) 2017-09-26
TW201630027A (zh) 2016-08-16
US20160189926A1 (en) 2016-06-30

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