TWI686839B - 離子植入系統、用於植入離子的方法以及在離子植入系統中實施劑量測定控制的方法 - Google Patents

離子植入系統、用於植入離子的方法以及在離子植入系統中實施劑量測定控制的方法 Download PDF

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Publication number
TWI686839B
TWI686839B TW104143774A TW104143774A TWI686839B TW I686839 B TWI686839 B TW I686839B TW 104143774 A TW104143774 A TW 104143774A TW 104143774 A TW104143774 A TW 104143774A TW I686839 B TWI686839 B TW I686839B
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TW
Taiwan
Prior art keywords
ion beam
frequency
scanned
ion
patent application
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TW104143774A
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English (en)
Chinese (zh)
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TW201630027A (zh
Inventor
安迪 芮
愛德華 艾斯能
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美商艾克塞利斯科技公司
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Publication of TW201630027A publication Critical patent/TW201630027A/zh
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Publication of TWI686839B publication Critical patent/TWI686839B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW104143774A 2014-12-26 2015-12-25 離子植入系統、用於植入離子的方法以及在離子植入系統中實施劑量測定控制的方法 TWI686839B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462096963P 2014-12-26 2014-12-26
US62/096,963 2014-12-26

Publications (2)

Publication Number Publication Date
TW201630027A TW201630027A (zh) 2016-08-16
TWI686839B true TWI686839B (zh) 2020-03-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104143774A TWI686839B (zh) 2014-12-26 2015-12-25 離子植入系統、用於植入離子的方法以及在離子植入系統中實施劑量測定控制的方法

Country Status (6)

Country Link
US (1) US10483086B2 (enExample)
JP (1) JP6779880B2 (enExample)
KR (1) KR102517466B1 (enExample)
CN (1) CN107210177B (enExample)
TW (1) TWI686839B (enExample)
WO (1) WO2016106423A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US11646175B2 (en) * 2019-02-15 2023-05-09 Axcelis Technologies, Inc. Method of mixing upstream and downstream current measurements for inference of the beam current at the bend of an optical element for realtime dose control
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US20020134948A1 (en) * 2001-03-23 2002-09-26 Olson Joseph C. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
US20050191409A1 (en) * 2004-01-06 2005-09-01 Adrian Murrell Ion beam monitoring arrangement
TW200809904A (en) * 2006-03-27 2008-02-16 Varian Semiconductor Equipment Ion implanter with variable scan frequency
TW201250761A (en) * 2011-03-31 2012-12-16 Axcelis Tech Inc Method and apparatus for improved uniformity control with dynamic beam shaping

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US7323700B1 (en) * 2001-04-02 2008-01-29 Applied Materials, Inc. Method and system for controlling beam scanning in an ion implantation device
US7064340B1 (en) * 2004-12-15 2006-06-20 Axcelis Technologies, Inc. Method and apparatus for ion beam profiling
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US8581204B2 (en) * 2011-09-16 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for monitoring ion implantation
JP5767983B2 (ja) * 2012-01-27 2015-08-26 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
JP2014022347A (ja) * 2012-07-24 2014-02-03 Sen Corp イオン注入方法およびイオン注入装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US20020134948A1 (en) * 2001-03-23 2002-09-26 Olson Joseph C. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
US20050191409A1 (en) * 2004-01-06 2005-09-01 Adrian Murrell Ion beam monitoring arrangement
TW200809904A (en) * 2006-03-27 2008-02-16 Varian Semiconductor Equipment Ion implanter with variable scan frequency
CN101410929A (zh) * 2006-03-27 2009-04-15 瓦里安半导体设备公司 具有可变扫描频率的离子植入机
TW201250761A (en) * 2011-03-31 2012-12-16 Axcelis Tech Inc Method and apparatus for improved uniformity control with dynamic beam shaping

Also Published As

Publication number Publication date
CN107210177B (zh) 2020-06-16
JP2018506135A (ja) 2018-03-01
WO2016106423A1 (en) 2016-06-30
CN107210177A (zh) 2017-09-26
KR102517466B1 (ko) 2023-03-31
US20160189926A1 (en) 2016-06-30
US10483086B2 (en) 2019-11-19
JP6779880B2 (ja) 2020-11-04
KR20170098815A (ko) 2017-08-30
TW201630027A (zh) 2016-08-16

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