KR101671367B1 - 멀티-칩 모듈 및 이를 제조하는 방법 - Google Patents

멀티-칩 모듈 및 이를 제조하는 방법 Download PDF

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KR101671367B1
KR101671367B1 KR1020157010779A KR20157010779A KR101671367B1 KR 101671367 B1 KR101671367 B1 KR 101671367B1 KR 1020157010779 A KR1020157010779 A KR 1020157010779A KR 20157010779 A KR20157010779 A KR 20157010779A KR 101671367 B1 KR101671367 B1 KR 101671367B1
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South Korea
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die
fuse
chip module
node
esd
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Korean (ko)
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KR20150064117A (ko
Inventor
브라이언 엠. 헨더슨
치우-구안 탄
그레고리 에이. 유비에그하라
레자 잘리리제인알리
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퀄컴 인코포레이티드
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    • H01L23/60—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H01L23/3128—
    • H01L23/481—
    • H01L23/5256—
    • H01L25/0657—
    • H01L25/50—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/879—Bump connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/26—Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020157010779A 2012-10-05 2013-10-03 멀티-칩 모듈 및 이를 제조하는 방법 Active KR101671367B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/646,109 US9184130B2 (en) 2012-10-05 2012-10-05 Electrostatic protection for stacked multi-chip integrated circuits
US13/646,109 2012-10-05
PCT/US2013/063297 WO2014055777A1 (en) 2012-10-05 2013-10-03 Electrostatic protection for stacked multi-chip integrated circuits

Publications (2)

Publication Number Publication Date
KR20150064117A KR20150064117A (ko) 2015-06-10
KR101671367B1 true KR101671367B1 (ko) 2016-11-01

Family

ID=49448293

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157010779A Active KR101671367B1 (ko) 2012-10-05 2013-10-03 멀티-칩 모듈 및 이를 제조하는 방법

Country Status (6)

Country Link
US (1) US9184130B2 (https=)
EP (1) EP2904638B1 (https=)
JP (1) JP5972473B2 (https=)
KR (1) KR101671367B1 (https=)
CN (1) CN104737288B (https=)
WO (1) WO2014055777A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9184130B2 (en) * 2012-10-05 2015-11-10 Qualcomm Incorporated Electrostatic protection for stacked multi-chip integrated circuits
JP5543567B2 (ja) * 2012-10-22 2014-07-09 誠 雫石 半導体素子の製造方法
KR102341750B1 (ko) 2015-06-30 2021-12-23 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
KR102482023B1 (ko) 2016-01-28 2022-12-28 삼성전자주식회사 적층 메모리 칩 전기적 단락 검출 장치 및 방법
US10147688B2 (en) 2016-02-25 2018-12-04 Allegro Microsystems, Llc Integrated circuit device with overvoltage discharge protection
CN107622999B (zh) * 2016-07-15 2020-06-02 中芯国际集成电路制造(上海)有限公司 静电放电保护电路
US9941224B2 (en) 2016-08-24 2018-04-10 Allegro Microsystems, Llc Multi-die integrated circuit device with capacitive overvoltage protection
US10145904B2 (en) * 2016-08-24 2018-12-04 Allegro Microsystems, Llc Multi-die integrated circuit device with overvoltage protection
CN107799502B (zh) * 2016-09-05 2020-03-10 中芯国际集成电路制造(上海)有限公司 保护电路和集成电路
US10325906B2 (en) * 2016-09-23 2019-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. ESD testing structure, method of using same and method of forming same
JP2018133503A (ja) 2017-02-16 2018-08-23 東芝メモリ株式会社 半導体記憶装置
US10552564B1 (en) * 2018-06-19 2020-02-04 Cadence Design Systems, Inc. Determining worst potential failure instances using full chip ESD analysis
DE102021101251A1 (de) 2020-03-31 2021-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Schutz vor antenneneffekten und schutz vor elektrostatischen entladungen für dreidimensionale integrierte schaltkreise
US11437708B2 (en) * 2020-03-31 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Antenna effect protection and electrostatic discharge protection for three-dimensional integrated circuit
FR3109666B1 (fr) * 2020-04-27 2026-01-02 3D Plus Procédé de fabrication d’un module électronique compatible hautes fréquences
CN112349655B (zh) * 2020-10-21 2021-10-19 长江存储科技有限责任公司 一种半导体器件及其安装结构、封装模具和制作方法
US11695375B2 (en) * 2020-12-03 2023-07-04 Nxp Usa, Inc. Power amplifier with a power transistor and an electrostatic discharge protection circuit on separate substrates
US11973057B2 (en) 2020-12-15 2024-04-30 Analog Devices, Inc. Through-silicon transmission lines and other structures enabled by same
FR3120160B1 (fr) * 2021-02-23 2023-11-03 Commissariat Energie Atomique Procédé de protection d’un étage supérieur de composants électroniques d’un circuit intégré contre l’effet d’antenne

Citations (3)

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US6243283B1 (en) 1999-04-30 2001-06-05 International Business Machines Corporation Impedance control using fuses
US6556409B1 (en) 2000-08-31 2003-04-29 Agere Systems Inc. Integrated circuit including ESD circuits for a multi-chip module and a method therefor
JP2010129958A (ja) 2008-12-01 2010-06-10 Seiko Epson Corp 半導体装置及び半導体装置の製造方法

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JPS5913354A (ja) 1982-07-13 1984-01-24 Toshiba Corp 半導体装置
JPS59134863A (ja) * 1982-12-28 1984-08-02 Fujitsu Ltd 静電破壊防止回路
JPH02146762A (ja) * 1988-11-28 1990-06-05 Nec Corp 半導体集積回路装置
US5807791A (en) 1995-02-22 1998-09-15 International Business Machines Corporation Methods for fabricating multichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodes
US6327125B1 (en) 1999-12-22 2001-12-04 Philips Electronics North America Corporation Integrated circuit with removable ESD protection
JP2003324151A (ja) 2002-04-26 2003-11-14 Toshiba Microelectronics Corp 半導体集積回路装置、実装基板装置、及び実装基板装置の配線切断方法
WO2006028231A1 (en) * 2004-09-10 2006-03-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100948520B1 (ko) * 2006-08-30 2010-03-23 삼성전자주식회사 정전기 특성을 개선한 증폭기
US7772124B2 (en) * 2008-06-17 2010-08-10 International Business Machines Corporation Method of manufacturing a through-silicon-via on-chip passive MMW bandpass filter
US8698139B2 (en) * 2008-11-25 2014-04-15 Qualcomm Incorporated Die-to-die power consumption optimization
US9184130B2 (en) * 2012-10-05 2015-11-10 Qualcomm Incorporated Electrostatic protection for stacked multi-chip integrated circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243283B1 (en) 1999-04-30 2001-06-05 International Business Machines Corporation Impedance control using fuses
US6556409B1 (en) 2000-08-31 2003-04-29 Agere Systems Inc. Integrated circuit including ESD circuits for a multi-chip module and a method therefor
JP2010129958A (ja) 2008-12-01 2010-06-10 Seiko Epson Corp 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
EP2904638B1 (en) 2020-05-27
JP5972473B2 (ja) 2016-08-17
CN104737288B (zh) 2017-09-26
US9184130B2 (en) 2015-11-10
US20140098448A1 (en) 2014-04-10
CN104737288A (zh) 2015-06-24
KR20150064117A (ko) 2015-06-10
JP2015532534A (ja) 2015-11-09
EP2904638A1 (en) 2015-08-12
WO2014055777A1 (en) 2014-04-10

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