KR101650375B1 - 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치 - Google Patents

양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치 Download PDF

Info

Publication number
KR101650375B1
KR101650375B1 KR1020090110847A KR20090110847A KR101650375B1 KR 101650375 B1 KR101650375 B1 KR 101650375B1 KR 1020090110847 A KR1020090110847 A KR 1020090110847A KR 20090110847 A KR20090110847 A KR 20090110847A KR 101650375 B1 KR101650375 B1 KR 101650375B1
Authority
KR
South Korea
Prior art keywords
light emitting
quantum dot
emitting diode
light emission
light
Prior art date
Application number
KR1020090110847A
Other languages
English (en)
Korean (ko)
Other versions
KR20110054262A (ko
Inventor
김태연
김윤회
Original Assignee
주식회사 탑 엔지니어링
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 탑 엔지니어링 filed Critical 주식회사 탑 엔지니어링
Priority to KR1020090110847A priority Critical patent/KR101650375B1/ko
Priority to TW99132453A priority patent/TW201123527A/zh
Priority to PCT/KR2010/006526 priority patent/WO2011062362A2/ko
Priority to CN201080052153.0A priority patent/CN102668142B/zh
Priority to JP2012538746A priority patent/JP2013511146A/ja
Publication of KR20110054262A publication Critical patent/KR20110054262A/ko
Application granted granted Critical
Publication of KR101650375B1 publication Critical patent/KR101650375B1/ko

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
KR1020090110847A 2009-11-17 2009-11-17 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치 KR101650375B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020090110847A KR101650375B1 (ko) 2009-11-17 2009-11-17 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치
TW99132453A TW201123527A (en) 2009-11-17 2010-09-24 Method and apparatus for repairing light emitting diode using quantum dot coating
PCT/KR2010/006526 WO2011062362A2 (ko) 2009-11-17 2010-09-27 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치
CN201080052153.0A CN102668142B (zh) 2009-11-17 2010-09-27 用于使用量子点涂覆来修复发光二极管的方法和装置
JP2012538746A JP2013511146A (ja) 2009-11-17 2010-09-27 量子ドットコーティングを用いた発光ダイオードのリペア方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090110847A KR101650375B1 (ko) 2009-11-17 2009-11-17 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치

Publications (2)

Publication Number Publication Date
KR20110054262A KR20110054262A (ko) 2011-05-25
KR101650375B1 true KR101650375B1 (ko) 2016-08-24

Family

ID=44060148

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090110847A KR101650375B1 (ko) 2009-11-17 2009-11-17 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치

Country Status (5)

Country Link
JP (1) JP2013511146A (ja)
KR (1) KR101650375B1 (ja)
CN (1) CN102668142B (ja)
TW (1) TW201123527A (ja)
WO (1) WO2011062362A2 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101296205B1 (ko) * 2012-07-20 2013-08-13 주식회사 네패스엘이디 발광소자 패키지의 제조 방법
KR102260326B1 (ko) * 2019-11-07 2021-06-03 세메스 주식회사 양자점 경화 처리 장치 및 방법 그리고 양자점 도포 처리 장치 및 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008112811A (ja) * 2006-10-30 2008-05-15 Kyocera Corp 発光装置の製造方法
JP2009260244A (ja) * 2008-03-25 2009-11-05 Toshiba Corp 発光装置及びその製造方法、並びに発光装置の製造装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858403B2 (en) * 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
KR100772567B1 (ko) * 2006-06-08 2007-11-02 경북대학교 산학협력단 백색 및 휘도 균일도를 만족하는 led 백라이트의 led분류 및 배열방법
KR100819337B1 (ko) * 2006-06-14 2008-04-02 재단법인서울대학교산학협력재단 양자점을 이용한 백색광 led 구조 및 그 제조 방법
JP2008147563A (ja) * 2006-12-13 2008-06-26 Sharp Corp ばらつきのあるledによる均一バックライトの製造方法
KR100991904B1 (ko) * 2007-12-14 2010-11-04 삼성전자주식회사 양자점을 이용한 백색광 led 소자 및 그 제조방법
KR101226777B1 (ko) * 2008-03-25 2013-01-25 가부시끼가이샤 도시바 발광 장치와, 그 제조 방법 및 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008112811A (ja) * 2006-10-30 2008-05-15 Kyocera Corp 発光装置の製造方法
JP2009260244A (ja) * 2008-03-25 2009-11-05 Toshiba Corp 発光装置及びその製造方法、並びに発光装置の製造装置

Also Published As

Publication number Publication date
KR20110054262A (ko) 2011-05-25
CN102668142B (zh) 2015-08-26
JP2013511146A (ja) 2013-03-28
TW201123527A (en) 2011-07-01
WO2011062362A3 (ko) 2011-07-14
CN102668142A (zh) 2012-09-12
WO2011062362A2 (ko) 2011-05-26

Similar Documents

Publication Publication Date Title
KR101734440B1 (ko) Led 패키지, 백라이트 유닛 및 액정 표시 장치
US8227979B2 (en) Method of matching color in lighting applications
US10629569B2 (en) Method of manufacturing illumination device, illumination device, illumination device manufacturing system, and method of classifying color tone of light emitting devices
US20110204400A1 (en) Light emitting device, method for manufacturing the same and apparatus for manufacturing light emitting device
CN110337712A (zh) 发光二极管(led)测试设备和制造方法
US10580825B2 (en) Method of manufacturing display device Including Photoluminescence measurement
TW201043978A (en) System and method for improved testing of electronic devices
TWI805564B (zh) 晶粒轉移方法及其裝置
US9892981B2 (en) Method and apparatus for depositing phosphor on semiconductor-light emitting device
US20110217530A1 (en) Conversion film and method for producing the same
KR101650375B1 (ko) 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치
TW201513391A (zh) 發光二極體
KR101650390B1 (ko) 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치
CN112798923A (zh) 发光二极管晶圆以及发光二极管晶圆检测装置与方法
KR101536644B1 (ko) 엘이디소자검사장치
KR102244667B1 (ko) 마이크로 엘이디 픽셀 패키지의 제조 방법 및 이에 의해 제조된 마이크로 엘이디 픽셀 패키지
CN114669496B (zh) 一种led芯片分选方法
US10784238B2 (en) Display device including sub-pixel units of the same color type and different luminous areas
TW202336982A (zh) 晶粒轉移方法
KR101112463B1 (ko) 발광다이오드 칩의 제조방법
CN106058007A (zh) 一种照明用led灯珠的圆片级封装方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant