CN102668142B - 用于使用量子点涂覆来修复发光二极管的方法和装置 - Google Patents
用于使用量子点涂覆来修复发光二极管的方法和装置 Download PDFInfo
- Publication number
- CN102668142B CN102668142B CN201080052153.0A CN201080052153A CN102668142B CN 102668142 B CN102668142 B CN 102668142B CN 201080052153 A CN201080052153 A CN 201080052153A CN 102668142 B CN102668142 B CN 102668142B
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- led
- illumination level
- light intensity
- intensity value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000007639 printing Methods 0.000 title description 2
- 239000002096 quantum dot Substances 0.000 claims abstract description 216
- 238000005286 illumination Methods 0.000 claims abstract description 151
- 239000000203 mixture Substances 0.000 claims abstract description 40
- 230000008439 repair process Effects 0.000 claims abstract description 14
- 230000002950 deficient Effects 0.000 claims description 48
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 239000012780 transparent material Substances 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 230000006872 improvement Effects 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 18
- 150000004767 nitrides Chemical class 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0110847 | 2009-11-17 | ||
KR1020090110847A KR101650375B1 (ko) | 2009-11-17 | 2009-11-17 | 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치 |
PCT/KR2010/006526 WO2011062362A2 (ko) | 2009-11-17 | 2010-09-27 | 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102668142A CN102668142A (zh) | 2012-09-12 |
CN102668142B true CN102668142B (zh) | 2015-08-26 |
Family
ID=44060148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080052153.0A Expired - Fee Related CN102668142B (zh) | 2009-11-17 | 2010-09-27 | 用于使用量子点涂覆来修复发光二极管的方法和装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2013511146A (ja) |
KR (1) | KR101650375B1 (ja) |
CN (1) | CN102668142B (ja) |
TW (1) | TW201123527A (ja) |
WO (1) | WO2011062362A2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101296205B1 (ko) * | 2012-07-20 | 2013-08-13 | 주식회사 네패스엘이디 | 발광소자 패키지의 제조 방법 |
KR102260326B1 (ko) * | 2019-11-07 | 2021-06-03 | 세메스 주식회사 | 양자점 경화 처리 장치 및 방법 그리고 양자점 도포 처리 장치 및 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101300687A (zh) * | 2005-10-28 | 2008-11-05 | 飞利浦拉米尔德斯照明设备有限责任公司 | 在led上层压包含磷光体的密封剂膜 |
CN101553936A (zh) * | 2006-05-31 | 2009-10-07 | 飞利浦拉米尔德斯照明设备有限责任公司 | 通过改变波长转换构件的彩色控制 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7858403B2 (en) * | 2001-10-31 | 2010-12-28 | Cree, Inc. | Methods and systems for fabricating broad spectrum light emitting devices |
KR100772567B1 (ko) * | 2006-06-08 | 2007-11-02 | 경북대학교 산학협력단 | 백색 및 휘도 균일도를 만족하는 led 백라이트의 led분류 및 배열방법 |
KR100819337B1 (ko) * | 2006-06-14 | 2008-04-02 | 재단법인서울대학교산학협력재단 | 양자점을 이용한 백색광 led 구조 및 그 제조 방법 |
JP2008112811A (ja) * | 2006-10-30 | 2008-05-15 | Kyocera Corp | 発光装置の製造方法 |
JP2008147563A (ja) * | 2006-12-13 | 2008-06-26 | Sharp Corp | ばらつきのあるledによる均一バックライトの製造方法 |
KR100991904B1 (ko) * | 2007-12-14 | 2010-11-04 | 삼성전자주식회사 | 양자점을 이용한 백색광 led 소자 및 그 제조방법 |
JP5025625B2 (ja) * | 2008-03-25 | 2012-09-12 | 株式会社東芝 | 発光装置の製造方法 |
KR101226777B1 (ko) * | 2008-03-25 | 2013-01-25 | 가부시끼가이샤 도시바 | 발광 장치와, 그 제조 방법 및 장치 |
-
2009
- 2009-11-17 KR KR1020090110847A patent/KR101650375B1/ko active IP Right Grant
-
2010
- 2010-09-24 TW TW99132453A patent/TW201123527A/zh unknown
- 2010-09-27 JP JP2012538746A patent/JP2013511146A/ja active Pending
- 2010-09-27 WO PCT/KR2010/006526 patent/WO2011062362A2/ko active Application Filing
- 2010-09-27 CN CN201080052153.0A patent/CN102668142B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101300687A (zh) * | 2005-10-28 | 2008-11-05 | 飞利浦拉米尔德斯照明设备有限责任公司 | 在led上层压包含磷光体的密封剂膜 |
CN101553936A (zh) * | 2006-05-31 | 2009-10-07 | 飞利浦拉米尔德斯照明设备有限责任公司 | 通过改变波长转换构件的彩色控制 |
Also Published As
Publication number | Publication date |
---|---|
KR20110054262A (ko) | 2011-05-25 |
JP2013511146A (ja) | 2013-03-28 |
TW201123527A (en) | 2011-07-01 |
WO2011062362A3 (ko) | 2011-07-14 |
KR101650375B1 (ko) | 2016-08-24 |
CN102668142A (zh) | 2012-09-12 |
WO2011062362A2 (ko) | 2011-05-26 |
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C14 | Grant of patent or utility model | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150826 Termination date: 20200927 |
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