CN102668142B - 用于使用量子点涂覆来修复发光二极管的方法和装置 - Google Patents

用于使用量子点涂覆来修复发光二极管的方法和装置 Download PDF

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Publication number
CN102668142B
CN102668142B CN201080052153.0A CN201080052153A CN102668142B CN 102668142 B CN102668142 B CN 102668142B CN 201080052153 A CN201080052153 A CN 201080052153A CN 102668142 B CN102668142 B CN 102668142B
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CN
China
Prior art keywords
quantum dot
led
illumination level
light intensity
intensity value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201080052153.0A
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English (en)
Chinese (zh)
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CN102668142A (zh
Inventor
金泰延
金润会
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Top Engineering Co Ltd
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Top Engineering Co Ltd
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Publication of CN102668142A publication Critical patent/CN102668142A/zh
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Publication of CN102668142B publication Critical patent/CN102668142B/zh
Expired - Fee Related legal-status Critical Current
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
CN201080052153.0A 2009-11-17 2010-09-27 用于使用量子点涂覆来修复发光二极管的方法和装置 Expired - Fee Related CN102668142B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2009-0110847 2009-11-17
KR1020090110847A KR101650375B1 (ko) 2009-11-17 2009-11-17 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치
PCT/KR2010/006526 WO2011062362A2 (ko) 2009-11-17 2010-09-27 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치

Publications (2)

Publication Number Publication Date
CN102668142A CN102668142A (zh) 2012-09-12
CN102668142B true CN102668142B (zh) 2015-08-26

Family

ID=44060148

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080052153.0A Expired - Fee Related CN102668142B (zh) 2009-11-17 2010-09-27 用于使用量子点涂覆来修复发光二极管的方法和装置

Country Status (5)

Country Link
JP (1) JP2013511146A (ja)
KR (1) KR101650375B1 (ja)
CN (1) CN102668142B (ja)
TW (1) TW201123527A (ja)
WO (1) WO2011062362A2 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101296205B1 (ko) * 2012-07-20 2013-08-13 주식회사 네패스엘이디 발광소자 패키지의 제조 방법
KR102260326B1 (ko) * 2019-11-07 2021-06-03 세메스 주식회사 양자점 경화 처리 장치 및 방법 그리고 양자점 도포 처리 장치 및 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101300687A (zh) * 2005-10-28 2008-11-05 飞利浦拉米尔德斯照明设备有限责任公司 在led上层压包含磷光体的密封剂膜
CN101553936A (zh) * 2006-05-31 2009-10-07 飞利浦拉米尔德斯照明设备有限责任公司 通过改变波长转换构件的彩色控制

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858403B2 (en) * 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
KR100772567B1 (ko) * 2006-06-08 2007-11-02 경북대학교 산학협력단 백색 및 휘도 균일도를 만족하는 led 백라이트의 led분류 및 배열방법
KR100819337B1 (ko) * 2006-06-14 2008-04-02 재단법인서울대학교산학협력재단 양자점을 이용한 백색광 led 구조 및 그 제조 방법
JP2008112811A (ja) * 2006-10-30 2008-05-15 Kyocera Corp 発光装置の製造方法
JP2008147563A (ja) * 2006-12-13 2008-06-26 Sharp Corp ばらつきのあるledによる均一バックライトの製造方法
KR100991904B1 (ko) * 2007-12-14 2010-11-04 삼성전자주식회사 양자점을 이용한 백색광 led 소자 및 그 제조방법
JP5025625B2 (ja) * 2008-03-25 2012-09-12 株式会社東芝 発光装置の製造方法
KR101226777B1 (ko) * 2008-03-25 2013-01-25 가부시끼가이샤 도시바 발광 장치와, 그 제조 방법 및 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101300687A (zh) * 2005-10-28 2008-11-05 飞利浦拉米尔德斯照明设备有限责任公司 在led上层压包含磷光体的密封剂膜
CN101553936A (zh) * 2006-05-31 2009-10-07 飞利浦拉米尔德斯照明设备有限责任公司 通过改变波长转换构件的彩色控制

Also Published As

Publication number Publication date
KR20110054262A (ko) 2011-05-25
JP2013511146A (ja) 2013-03-28
TW201123527A (en) 2011-07-01
WO2011062362A3 (ko) 2011-07-14
KR101650375B1 (ko) 2016-08-24
CN102668142A (zh) 2012-09-12
WO2011062362A2 (ko) 2011-05-26

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Granted publication date: 20150826

Termination date: 20200927

CF01 Termination of patent right due to non-payment of annual fee