201123527 六、發明說明： 【發明所屬之技術領域】 本發明係、關於-種修復發光二極體之方法及裝置， 別關於-種修復發光二極體之方法及裳置，其係量測發光 -極體之發光特難，魏光贿值之料來分類發 光二極體，並塗佈-量子點混合溶劑於發光二極體上而ς 成-量子點層，藉此改善發光二極體之發光色度或亮度^ 使發光二極體變成非缺陷產品，因而增加生產良率:又 【先前技術】 發光二極體係由化合物半導體所組成，其可例如包含 二五族化合物半導體中的氮化物，如氮化鎵（GaN)。基本 上，發光二極體包含一 p型半導體層及—n型半導體層， P型半導體層及η型半導體層可例如對氮化物半導體換雜 入Ρ型或η型雜f而形成。另外，藉由在Ρ型氮化物半導 體層與η型氮化物半導體層之間設置—主動層— ¥ )’可提升電子與電動的複合率（recombination rate )， 並可改善發光二極體之發光特性。 如圖1所示，一種習知發光二極體L係包含一 p型氮 化物半導體層及—n载化物半導Μ，且兩者分別與一 外。Ρ电極ΕΕ連接。藉由對兩電極ΕΕ供電，可使發光二極 體L發出可見光。 此外，近來為改善發光二極體的發光特性或改變其發 出之色光’可在發光二極體乙之一適當位置設置一量子點 4 201123527 層（quantum dot layer)，於此，發光二極體包含一 p型氮 化物半導體層、一主動層及一 n型氮化物半導體層。 此外，如圖2所示，一種習知發光二極體除了包含— P型氮化物半導體層、—主動層及—n型氮化物半導體層， 更包含一螢光層FL，螢光層FL可提升發光特性。當然， 圖2所示之發光二極體亦可塗佈一量子點層，以改變發出 色光或改善發光特性。舉例而言，如圖3所示，一種習知 具有螢光層之發光二極體在塗佈量子點層之前，可發出藍 色光，而在塗佈可發出黃光波長之量子層QL之後，其= 發出白光。 除了上述具有基本架構的發光二極體之外，其他發光 極體亦可在適當位置設置量子點層。藉由在發光二極體 之頂層上塗佈勞光層或量子點層，可製成具高亮度之各種 色光的發光二極體。 、幻而，§發光二極體製造完成之後，需設置於檢測台 上並供電，藉由光檢測器對發光二極體所發出之光線進行 檢測:在檢測過程中，總有一些發光二極體被列為缺陷之 發光=極體。由於發光二極體之生產良率關係到發光二極 體之^貝位。因此，如何藉由改善缺陷發光二極體之發光特 f色度使其#為符合要求之合格發光二極體，進而減 ^、缺陷發光二極體的數量以降低成本，實為當前重要課題 【發明内容】 201123527 有鑒於上述課題，本發明之—目的在於提供一種發光 一極體修復方法及裝置，其係量測發光二極體之發光特徵 值，並依據發光特徵值之等級來分類發光二極體，並塗佈 一量子點混合溶劑於發光二極體上而形成一量子點層，藉 此改善發光一極體之發光色度或亮度，使發光二極體變成 非缺陷產品，因而增加生產良率。 為達上述目的，本發明之一種發光二極體修復方法包 3 .里測一發光二極體之一發光特徵值，並判斷該發光特 徵值之一發光等級；對應該發光等級而決定一修復量子 點；以及對應該修復量子點而形成一量子點層於該發光二 極體之一頂層上。 在-實施例中，當該發光等級等於或大於一參考發光 等級時，該發光二極體係分類為一非缺陷產品，當該發光 ^級小於該參考發光等級時，該發光二極體係分類為一缺 陷產品’而該修復量子點係對應該發光等級而決定。 在-實施例中，在形成該量子點層之後，發光二極體 .修復方法更包含：再次量測已形成該量子點層之發光二極 體之-發光特徵值’並且判斷再次量測之發光特徵值之一 發光等級是否等於或大於參考發光等級。 在實施例中，里子點之形成包含：塗佈對應該修復 量子點之-量子點混合溶劑於該發光二極體之頂層上；以 及乾燥該量子點混合溶劑。 在-實施例中，在形成該量子點層之後，發光二極體 修復方法更包含：形成一保護層於該量子點層上，該保護 6 201123527 層係由一透光材質製成。 為達上述目的，本發明之一種發光二極體修復裝置包 ^第-光檢測單元、-量子點選擇單元、—量子點塗佈 早70以及-第-乾燥單元。第一光檢測單元量測一發光二 極體之-發光特徵值。量子點選擇單元判斷該發光特徵值 之一發光等級，並對應該發光等級決定—修復量子點。量 子點塗佈單元對應該修復量子點塗佈—量子點混合溶劑 =賴光二極體之—頂層上。第—乾鮮元賴該量子點 '/Wj合(谷劑而形成一量子點層。 在一實施例中，發光二極體修復裝置更包含一第二光 檢測單元以及-非缺陷產品判斷單元。第二光檢測單:量 測已形成量子點層之該發光二極體之一發光特徵值。非缺 陷產品判斷單元判斷該第二光檢測單元所量測之發光特 徵值之4光等級是否等於或大於一參考發光等級。 +在@施例中，量子點塗佈單元包含複數喷嘴，各該 嘴嘴分別對應各該修復量子點，且對應各該修復量子點^ 各該量子點混合溶義經由各該喷嘴排出。 ’ ^實^列中，發光二極體修復裝置更包含一保護層 ^早二乾燥單元。保護層塗佈單元塗佈—保 S 錢遵層係由-透光材質製成。第 一乾燥早7C乾燥該保護層。 …在-實施例令，量子點選擇單元包含一發光等級判斷 早兀以及一量子點決定單-㈣- #>、,目丨…★ #朗早70係判斷從 / 双’、1早兀’ 5亥第二光檢測單元輪出之該發光特 201123527 徵值之該發光等級。量子點決定單元係藉由參考一資料庫 之資訊而對應該發光等級蚊該修復量子點，該資料庫儲 存關於對應各發光等級之量子點種類之資訊。 在一實施例中，量子點選擇單元可更包含一非缺陷產 品傳輸單元，若該發光等級判斷單元判斷一發光二極體之 ，光等級等於或大於該參考發光等級，該非^陷產品傳輸 單元傳送該發光二極體至一非缺陷產品收集單元。 在一實施例中，發光二極體修復裝置可更包含一饋送 單元，其具有複數發光二極體，各該發光二極體係設置於 各治具’該饋送單元係-個一個地傳送該等發光二極體至 該第-光檢測單元，以便該第一光檢測單元量測各該發光 二極體之發光特徵值。 達上述目的，本發明之—種發光二極體修復方法包 3里測複數务光一極體之發光特徵值，判斷該等發光特 徵值之發光等級，並依據該等發光等級分類該等發光二極 體；依據各該發光等級將已分類之該等發光二極體傳送至 =同^ ’並收集該等發光二極體，且對應各發光等級決 疋修復量子點；以及對應各修復量子點而形成不同的量子 點層於各發光二極體之頂層上。 一在—實施财，當料發綺級等於或大於-參考發 光等級時，遠等發光二極體係分類為非缺陷產品，當該等 2光等級小於該參考發光等級時，該等發光二極體係分類 絲陷產品’而該等修復量子點係對應該發光等級而決 8 201123527 在一實施例中’在形成該量子點層之後，發光二極體 修復方法可更包含：再次量測已形成該等量子點層之該等 發光二極體之發光特徵值，並且判斷再次量測之發光特徵 值之發光等級是否等於或大於該參考發光等級。 在一貫施例中，在形成該等量子點層之後，發光二極 體修復方法可更包含：形成一保護層於各該量子點層上， δ玄保濩層係由一透光材質製成。 马達上述目的，本發明之一種發光二極體修復裝置包 t一分類單元、-傳輸機構、複數收集單元以及複數修復 ，元^分類單元係量測複數發光二極體之發光特徵值，判 斷，等發光特徵值之發光等級，並依據該等發光等級分類 5亥等發光二極體。傳輸機構係依據該等發光等級將已分類 光—極體傳輸至不同位置。收集單元係依據各該發光 等級，集該等發光二極體，該等發光二極體設置於治^。 :隻單元係對應各4收集單元而形成量子點層^該等發 光二極體之頂層上以修復該等發光二極體。 a 在一實施例中’各該修復單元包含一饋送單元、一量 :點塗佈單元乾鮮元。饋送單元係將收华於 :二應治具之該等發光二極體一個一個地傳送。量子點塗 早元係使用s子點混合溶劑在藉由該饋送單元傳送 =發光二極體之頂層上進行塗佈。第一乾燥單元係乾燥 ^里子點混合溶劑而形成該量子點層。 實施例中，各該修復單元更包含—光檢測單元以 非缺陷產品判斷單元。光檢測單元係量測已形成量子 201123527 點層之發光二極體之一發光特徵值。 =斷該發光特徵值之一發光等級是否等於 考發光等級。 〆 …在-實施例中’各該修復單元更包含—保護層塗佈單 7C以及—第二乾燥單元。保護層塗佈單元係形成 ^該量子點層上，該㈣層f透光㈣製成。第二㈣ 皁元係乾燥該保護層。 ’ 在一實施例中，言亥分類單元將發光等級等於或大於一 參考發光等級之發光二極體傳送至該非缺陷產品收集 元。 、f 【實施方式】 以下將參照相關圖式， 發光二極體修復方法及裝置 參照符號加以說明。 說明依據本發明較佳實施例之 ，其中相同的元件將以相同的 二極體修復裝置 圖4為本發明較佳實施例之一種發光 100的示意圖。 請參照圖4所示，發光二極體修復褒置100包含一傳 輸系統110、-饋送單元12G、—第—光檢測單元13〇、一 2點選擇單^ 131、—量子點塗佈單元140、-第一乾 V，兀15G H蒦層塗佈單元16G、_第二乾燥單元170、 -第二光檢測單元18〇、一非缺陷產品判斷單元⑻以及 一非缺陷產品收集單元19〇。 在本實施例中，發光二極體修復裝置1〇〇係應用於一 201123527 產品品質檢測機台上，產品品質檢測機台係用以檢測製成 之發光二極體。供電至發光二極體，藉由第一光檢測單元 130量測發光二極體所發出之光線之發光特徵值，然後依 據所量測之發光特徵值來分類發光二極體，再據此將一量 子點層形成於各發光二極體之頂層，以改善其發光特性， 例如其色度或亮度，可例如為關於色度或亮度的數位資 訊。藉此，就能將缺陷發光二極體修復為非缺陷產品，且 使其具有改善之發光色度或亮度。 以下請參照圖5之流程圖來說明發光二極體修復裝置 100之作動。 饋送單元120包含複數發光二極體，且各發光二極體 設置於各治具。在步驟S11中，饋送單元120依序將各發 光二極體饋送至第一光檢測單元130。在第一光檢測單元 130量測發光二極體之後，傳輸系統110係將已量測之發 光二極體傳輸至量子點塗佈單元140,然後使下一發光二 極體傳輸至第一光檢測單元130。 在步驟S12中，第一光檢測單元130量測發光二極體 之發光特徵值。位於治具上之發光二極體可經由一預設之 電極供應電源，使得發光二極體發出光線。第一光檢測單 元130所量測之發光特徵值可包含關於色度或亮度之數位 資訊。舉例來說，第一光檢測單元130可藉由分析輸入光 線之頻譜（或波長）而產生關於色度之資訊（數位資訊）； 或者，可藉由分析輸入光線之發光強度而產生關於亮度之 資訊（數位資訊）。 11 201123527 藉由第一光檢測單元13〇量測發光二極體之發光特徵 值之後，在步驟S13巾，量子點選擇單元131卩斷各發光 二極體之發光特徵值之發光等級，並將已量測之發光二極 體分類為非缺陷或缺陷產品，並且依據儲存於圖6所示之 資料庫内關於發光等級之資訊而決定對應的修復量子 點:舉例而言，依據第一光檢測單元130所量測之色度、 或党度、或兩者的結合，量子點選擇單元ΐ3ι可將發光等 級分為複數等級，例如256個等級。並且，量子點選擇單 ”31可，由查詢圖6所示之資料庫而決定各等級所對應 之一=復量子點，該資料庫儲存關於各等級所對應之量子 ::::而:修復量子點係為一量子點，其可藉由下面所 ^而使—發光二極體之發光等級等於或大於 考發光等級。 一立圖7為本發明—實施例之量子點選擇單元131之方塊 不芯圖。 請參照圖7所示，詈早黜遝裡_ 級判斷單元一量早：31包含-發光等 資料庙里子2决疋早凡42〇、一量子點種類 貝科庫421以及—非缺陷產品傳輸單元430。 1等級判斷單元410依據從第一光檢測單元130輸 特徵值，例如關於色度或亮度之-數位資訊， 據非缺光特徵值之發光等級。此外，#—量子點層依 級181之判斷而再次形成時，發光等 光1 可判斷藉由第二光檢測單元⑽對-發 極體量測之一發光特徵值之發光等級，該發光特徵值 12 201123527 例如為一色度或亮度之數位資訊。 量子點種類資料庫421儲存並保存關於各發光等級所 需之量子點的種類，如圖6所示。 量子點決定單元420可藉由參考儲存於量子點種類資 料庫421之資訊，對應發光等級判斷單元410所判斷之發 光等級而決定一修復量子點。舉例而言，若量子點種類資 料庫421係儲存所需量子點#1之資訊，則量子點決定單元 420可對應各別的發光等級而決定各別之所需量子點為一 修復量子點。若量子點種類資料庫421係儲存所需量子點 #2之資訊，則量子點決定單元420可對應各別的發光等級 而決定各別之所需量子點為一修復量子點，其中多個不同 的發光等級係對應同一所需量子點。若量子點種類資料庫 421係儲存所需量子點#3之資訊，則量子點決定單元420 對應於非缺陷產品可不決定修復量子點，其中非缺陷產品 之發光等級係等於或大於參考發光等級（例如等級1至 50、或其他等級）。並且，屬於其他發光等級之發光二極 體，即發光等級小於參考發光等級而被分類為缺陷產品之 發光二極體，量子點決定單元420可對應發光等級而決定 所需量子點為一修復量子點，其中多個不同的發光等級係 對應同一所需量子點。在其他實施例中，若有需要使發光 等級等於或大於參考發光等級（例如等級1至50、或其他 等級）之非缺陷產品之發光二極體之發光等級得到進一步 的改善，量子點決定單元420亦可對應非缺陷產品之發光 二極體之發光等級而決定一修復量子點。另外，在本實施 13 201123527 例_杳光冗度小於參考發光等級而被分201123527 VI. Description of the Invention: [Technical Field] The present invention relates to a method and a device for repairing a light-emitting diode, and relates to a method and a skirt for repairing a light-emitting diode, which is a measuring light - The polar body is particularly difficult to light, Wei Guang bribes the material to classify the light-emitting diode, and coats the quantum dot mixed solvent on the light-emitting diode to form a quantum dot layer, thereby improving the light-emitting diode Luminous chromaticity or brightness ^ makes the light-emitting diode a non-defective product, thus increasing production yield: again [Prior Art] The light-emitting diode system is composed of a compound semiconductor, which may, for example, contain nitrogen in a di-family compound semiconductor A compound such as gallium nitride (GaN). Basically, the light-emitting diode includes a p-type semiconductor layer and an -n-type semiconductor layer, and the p-type semiconductor layer and the n-type semiconductor layer can be formed, for example, by interchanging a nitride semiconductor with a ytterbium type or an n-type impurity f. In addition, by providing an active layer between the Ρ-type nitride semiconductor layer and the n-type nitride semiconductor layer, the recombination rate can be improved, and the luminescence of the illuminating diode can be improved. characteristic. As shown in Fig. 1, a conventional light-emitting diode L system comprises a p-type nitride semiconductor layer and a -n-transfer semiconductor, and the two are respectively associated with each other. Ρ electrode ΕΕ connection. By supplying power to the two electrodes, the light-emitting diode L can emit visible light. In addition, recently, in order to improve the light-emitting characteristics of the light-emitting diode or to change the color light emitted by the light-emitting diode, a quantum dot 4 201123527 quantum dot layer may be disposed at a suitable position of the light-emitting diode B. Here, the light-emitting diode A p-type nitride semiconductor layer, an active layer and an n-type nitride semiconductor layer are included. In addition, as shown in FIG. 2, a conventional light-emitting diode includes a P-type nitride semiconductor layer, an active layer, and an -n-type nitride semiconductor layer, and further includes a phosphor layer FL, and the phosphor layer FL can be Improve luminescence characteristics. Of course, the light-emitting diode shown in Fig. 2 can also be coated with a quantum dot layer to change the color light or improve the light-emitting characteristics. For example, as shown in FIG. 3, a conventional light-emitting diode having a fluorescent layer emits blue light before coating a quantum dot layer, and after coating a quantum layer QL that emits a yellow wavelength, It = emits white light. In addition to the above-described light-emitting diodes having a basic structure, other light-emitting diodes may be provided with quantum dot layers at appropriate positions. By coating a mortar layer or a quantum dot layer on the top layer of the light-emitting diode, a light-emitting diode of various color lights having high luminance can be obtained. After the manufacture of the LED is completed, it needs to be placed on the test bench and powered. The light emitted by the LED is detected by the photodetector: during the detection process, there are always some LEDs. The body is classified as a defect of luminescence = polar body. Since the production yield of the light-emitting diode is related to the ^b position of the light-emitting diode. Therefore, how to reduce the cost of the defective light-emitting diode by reducing the luminous specificity of the defective light-emitting diode to make it possible to reduce the cost of the defective light-emitting diode is a current important issue. SUMMARY OF THE INVENTION 201123527 In view of the above problems, the present invention is directed to providing a method and apparatus for repairing a light-emitting diode, which measures the light-emitting characteristic values of the light-emitting diodes, and classifies the light-emitting according to the level of the light-emitting characteristic values. a diode, and coating a quantum dot mixed solvent on the light emitting diode to form a quantum dot layer, thereby improving the chromaticity or brightness of the light emitting diode, thereby making the light emitting diode into a non-defective product, thereby Increase production yield. In order to achieve the above object, a light-emitting diode repair method package of the present invention includes measuring a light-emitting characteristic value of a light-emitting diode, and determining a light-emitting level of the light-emitting characteristic value; determining a repair corresponding to the light-emitting level Quantum dots; and a quantum dot to be repaired to form a quantum dot layer on top of one of the light-emitting diodes. In an embodiment, when the illuminating level is equal to or greater than a reference illuminating level, the illuminating dipole system is classified as a non-defective product, and when the illuminating level is less than the reference illuminating level, the illuminating dipole system is classified as A defective product' and the repaired quantum dot is determined by the level of illumination. In an embodiment, after forming the quantum dot layer, the light-emitting diode repair method further comprises: measuring the light-emitting characteristic value of the light-emitting diode that has formed the quantum dot layer again and determining the re-measurement. Whether one of the illuminance characteristic values is equal to or greater than the reference illuminance level. In an embodiment, the formation of the neutron point comprises: coating a quantum dot mixed solvent corresponding to the quantum dot on the top layer of the light emitting diode; and drying the quantum dot mixed solvent. In an embodiment, after forming the quantum dot layer, the light emitting diode repairing method further comprises: forming a protective layer on the quantum dot layer, the protective layer 6 201123527 layer being made of a light transmissive material. To achieve the above object, a light-emitting diode repair apparatus of the present invention includes a first photodetecting unit, a quantum dot selecting unit, a quantum dot coating early 70, and a - drying unit. The first photo detecting unit measures the illuminating characteristic value of the illuminating diode. The quantum dot selection unit determines one of the illuminating characteristic values and determines the illuminating level to fix the quantum dot. The quantum dot coating unit should be repaired on the top layer of the quantum dot coating - quantum dot mixed solvent = Lai light diode. The first dry element is formed by a quantum dot '/Wj (a quantum dot layer is formed by the granules. In one embodiment, the light-emitting diode repair device further includes a second light detecting unit and a non-defective product determining unit. a second light detecting sheet: measuring a light-emitting characteristic value of the light-emitting diode that has formed a quantum dot layer. The non-defective product determining unit determines whether the light level of the light-emitting characteristic value measured by the second light detecting unit is 4 Is equal to or greater than a reference illuminance level. + In the example, the quantum dot coating unit includes a plurality of nozzles, each of which corresponds to each of the repaired quantum dots, and corresponding to each of the repaired quantum dots The sense is discharged through each nozzle. In the ^ ^ ^ column, the light-emitting diode repair device further includes a protective layer ^ two drying unit. The protective layer coating unit coating - Bao S Qian Zun layer by - light material The first drying is dried 7C early to dry the protective layer. In the embodiment, the quantum dot selection unit includes a luminescence level to determine the early 兀 and a quantum dot decision single-(four)-#>,, witness...★# Long early 70 series judged from / double ', 1 early The illuminating level of the illuminating value of the illuminating characteristic of the second light detecting unit of the 5th illuminating unit. The quantum dot determining unit corresponds to the illuminating level mosquito by the information of a database, and the database stores the relevant Corresponding to the information of the quantum dot type of each illuminating level. In an embodiment, the quantum dot selecting unit may further comprise a non-defective product transmitting unit, and if the illuminating level determining unit determines a light emitting diode, the light level is equal to or greater than The reference illumination level, the non-defective product transmission unit transmits the LED to a non-defective product collection unit. In an embodiment, the LED repair apparatus may further comprise a feeding unit having a plurality of LEDs Each of the light-emitting diode systems is disposed in each of the fixtures. The feeding unit transmits the light-emitting diodes to the first-light detecting unit one by one, so that the first light detecting unit measures each of the light-emitting diodes The illuminating characteristic value of the polar body. For the above purpose, the illuminating characteristic value of the complex light-polar body in the light-emitting diode repairing method package 3 of the present invention is judged Breaking the illuminating levels of the illuminating feature values, and classifying the illuminating diodes according to the illuminating levels; transmitting the sorted illuminating diodes to the same 依据 and collecting the illuminating lights according to the illuminating levels a diode, and corresponding to each of the illuminating levels, to repair the quantum dots; and corresponding to each of the repaired quantum dots to form a different quantum dot layer on the top layer of each of the light-emitting diodes. Or greater than - the reference illuminance level, the far-emission dipole system is classified as a non-defective product, and when the 2 ray levels are less than the reference illuminance level, the illuminating dipole system classifies the wire trap product' and the repaired quantum dots According to an embodiment, after the formation of the quantum dot layer, the light-emitting diode repair method may further comprise: measuring the light-emitting diodes that have formed the quantum dot layers again. And illuminating the feature value, and determining whether the illuminance level of the illuminating feature value measured again is equal to or greater than the reference illuminance level. In a consistent embodiment, after the formation of the quantum dot layers, the light-emitting diode repair method may further comprise: forming a protective layer on each of the quantum dot layers, and the δ-Xuanbao layer is made of a light-transmitting material. . The above object of the present invention is to provide a light-emitting diode repairing device package t-classification unit, a transmission mechanism, a plurality of collection units, and a plurality of repairs, and the element classification unit measures the luminous characteristic values of the complex light-emitting diodes, and judges And the illuminating level of the illuminating characteristic value, and classifying the light-emitting diodes such as 5 hai according to the illuminating levels. The transmission mechanism transmits the classified light-polar bodies to different positions according to the illumination levels. The collecting unit collects the light emitting diodes according to the respective light emitting levels, and the light emitting diodes are disposed in the treatment. : Only the unit is formed corresponding to each of the four collection units to form a quantum dot layer on the top layer of the light-emitting diodes to repair the light-emitting diodes. a In an embodiment, each of the repair units comprises a feed unit, an amount: a spot coating unit. The feeding unit transmits the light-emitting diodes of the Erzhi jig one by one. Quantum dot coating The early element was coated on the top layer of the light-emitting diode by the feed unit using a s-sub-doping solvent. The first drying unit is dried to mix the solvent to form the quantum dot layer. In an embodiment, each of the repairing units further includes a light detecting unit as a non-defective product determining unit. The light detecting unit measures the light-emitting characteristic value of one of the light-emitting diodes that have formed the quantum 201123527 point layer. = Whether one of the illuminating characteristic values is equal to the illuminating level. 〆 In the embodiment, each of the repairing units further comprises a protective layer coating sheet 7C and a second drying unit. A protective layer coating unit is formed on the quantum dot layer, and the (four) layer f is made of light (four). The second (four) soap element is used to dry the protective layer. In an embodiment, the Yanhai classification unit transmits a light-emitting diode having a light-emitting level equal to or greater than a reference light-emitting level to the non-defective product collection element. f [Embodiment] Hereinafter, a method and a device for repairing a light-emitting diode will be described with reference to the related drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In accordance with a preferred embodiment of the present invention, wherein the same elements will be provided with the same diode repair apparatus, FIG. 4 is a schematic illustration of a light emitting device 100 in accordance with a preferred embodiment of the present invention. Referring to FIG. 4, the LED repairing device 100 includes a transmission system 110, a feeding unit 12G, a first light detecting unit 13A, a 2-point selection unit 131, and a quantum dot coating unit 140. - a first dry V, a 15G H layer coating unit 16G, a second drying unit 170, a second light detecting unit 18, a non-defective product determining unit (8), and a non-defective product collecting unit 19A. In the present embodiment, the light-emitting diode repairing device 1 is applied to a 201123527 product quality testing machine, and the product quality testing machine is used to detect the manufactured light-emitting diode. Powering the light-emitting diode, the first light detecting unit 130 measures the light-emitting characteristic value of the light emitted by the light-emitting diode, and then classifies the light-emitting diode according to the measured light-emitting characteristic value, and then according to the A quantum dot layer is formed on the top layer of each of the light emitting diodes to improve its luminescent properties, such as its chromaticity or brightness, and may be, for example, digital information about chromaticity or brightness. Thereby, the defective light-emitting diode can be repaired to a non-defective product with improved illuminance chromaticity or brightness. Hereinafter, the operation of the light-emitting diode repair apparatus 100 will be described with reference to the flowchart of FIG. The feeding unit 120 includes a plurality of light emitting diodes, and each of the light emitting diodes is disposed on each of the jigs. In step S11, the feeding unit 120 sequentially feeds the respective light emitting diodes to the first light detecting unit 130. After the first light detecting unit 130 measures the light emitting diode, the transmission system 110 transmits the measured light emitting diode to the quantum dot coating unit 140, and then transmits the next light emitting diode to the first light. Detection unit 130. In step S12, the first light detecting unit 130 measures the light emitting characteristic value of the light emitting diode. The light-emitting diode on the fixture can be supplied with power via a predetermined electrode, so that the light-emitting diode emits light. The illuminating feature values measured by the first photodetecting unit 130 may include digital information about chrominance or luminance. For example, the first light detecting unit 130 can generate information about chromaticity (digital information) by analyzing the spectrum (or wavelength) of the input light; or can generate brightness information by analyzing the illuminating intensity of the input light. Information (digital information). 11 201123527 After the first light detecting unit 13 measures the light emitting characteristic value of the light emitting diode, the quantum dot selecting unit 131 cuts off the light emitting level of each of the light emitting diodes in step S13, and The measured light-emitting diodes are classified as non-defective or defective products, and the corresponding repair quantum dots are determined according to the information stored in the database shown in FIG. 6 regarding the light-emitting level: for example, according to the first light detection The chrominance, or partying, or a combination of the two measured by unit 130, the quantum dot selection unit ΐ3ι can divide the illuminance level into a plurality of levels, for example 256 levels. Moreover, the quantum dot selection list 31 can determine one of the levels corresponding to the complex = quantum dots by querying the database shown in FIG. 6, and the database stores the quantum corresponding to each level:::: and: repair The quantum dot system is a quantum dot, which can be made by the following - the light-emitting diode has a light-emitting level equal to or greater than the light-emitting level. A vertical diagram 7 is a block of the quantum dot selection unit 131 of the present invention - an embodiment. Please refer to Figure 7. Please refer to Figure 7. The early 黜遝 _ —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— The non-defective product transmission unit 430. The gradation determining unit 410 converts the eigenvalues from the first photodetecting unit 130, for example, chrominance or luminance-digital information, according to the illuminance level of the non-light-deficient characteristic value. When the dot layer is formed again according to the judgment of the level 181, the light 1 such as light emission can determine the light-emitting level of one of the light-emitting feature values measured by the second light detecting unit (10), and the light-emitting characteristic value 12 201123527 is, for example. Number of chromaticity or brightness The quantum dot type database 421 stores and stores the types of quantum dots required for each illuminance level, as shown in Fig. 6. The quantum dot determining unit 420 can refer to the information stored in the quantum dot type database 421 by reference. The quantum dot determined by the level determining unit 410 determines a repair quantum dot. For example, if the quantum dot type database 421 stores the information of the desired quantum dot #1, the quantum dot determining unit 420 can correspond to the respective light emitting. The quantum dot determined by the level is a repair quantum dot. If the quantum dot type database 421 stores the information of the desired quantum dot #2, the quantum dot determining unit 420 can determine the respective light emitting levels. The other desired quantum dot is a repair quantum dot, wherein a plurality of different illuminating levels correspond to the same desired quantum dot. If the quantum dot species database 421 stores information of the desired quantum dot #3, the quantum dot determining unit 420 corresponding to a non-defective product may not determine to repair a quantum dot, wherein the non-defective product has an illumination level equal to or greater than a reference illumination level (eg, level 1 to 50, or And a light-emitting diode belonging to another light-emitting level, that is, a light-emitting diode whose light-emitting level is smaller than the reference light-emitting level and classified as a defective product, and the quantum dot determining unit 420 can determine the desired quantum dot according to the light-emitting level. A quantum dot repair in which a plurality of different illumination levels correspond to the same desired quantum dot. In other embodiments, if desired, the illumination level is equal to or greater than the reference illumination level (eg, level 1 to 50, or other level). The illuminating level of the light-emitting diode of the non-defective product is further improved, and the quantum dot determining unit 420 can also determine a repair quantum dot corresponding to the illuminating level of the light-emitting diode of the non-defective product. In addition, in this embodiment 13, 201123527 _The light redundancy is less than the reference illumination level and is divided
發光二極體’若其發光等級屬於一特定發先等級H 級200至256、或其他等級），則可被丢棄。 " §發光二極體由第—光檢測單元13G量測之發光特徵 值之發光等級等於或大於夫去说丄, 尤特试 等級…。、或二:„ 圖6所示之 /、他專、，及）時，非缺陷產品傳輪單元43〇 專輸，發光二極體至非缺陷產品收集單元190。舉例 ϋ發光等級判斷單元41G判斷—發光二極體具有一 =之發光等級且為一缺㈣光二極體，以致需設置一修 復罝子點層時，量子點決定單元係以如上所述之方式 蚊一修復量子點。然而，當發光等級判斷單元41〇判斷 極體由第-綠測單元13()量測之發光特徵值之發 4級等於或大於參考發光等級（例如圖6所示之等級！ 至5〇、或其他等級）3夺，非缺陷產品傳輸單元·可傳輸 該些發光二極體至非缺陷產品收集單元。 口…另外、’當一發光二極體之修復量子點已由量子點選擇 、、-1决疋之後，其可藉由傳輸系統110傳送至量子點 ^伟單7G 140 ’而量子點塗佈單元14G接收由量子點選擇 :凡131所輪出之關於修復量子點資訊，並使用對應修復 置子點之—量子點混合溶劑而在發光二極體之頂層塗佈 驟S14)。里子點塗佈單元14〇係具有複數喷嘴，該等 、嘴分別對應料修復量子點。量子點塗佈單元14〇可經 由對應修復量子點之喷嘴排出量子點混合溶劑而進行塗 佈。 14 201123527 於此，里子點可為一化合物半導體之奈米結晶，例如 硫化鎘（cds)、砸化録（CdSe>、碎化録（⑽）、硫化 鋅（ZnS)、石西化鋅（ZnSe)、碌化鋅（ZnTe)、硫化采（邮）、 石西化汞（=gSe)或碲化汞（HgTe)。量子點混合溶劑可藉 由混合-I子點及-擴散媒介（例如甲苯、己烧或其他類 似材料）而形成。量子點混合溶劑可設置於一容器，該容 器係與各別喷嘴連接。量子點混合溶射經时嘴排出。 此外，本發明可藉由其他方法來製造多種的量子點混合溶 ^先二極體被塗佈量子點層之後，可藉由傳輸系統 =料至第-乾燥單元15G。在步驟阳中，第一乾燥 早兀15G可使發光二極體上之量子點混合溶劑乾燥。 接著，當發光二極體藉由傳輸系統u 塗佈單元叫保護層塗佈單元⑽係將一保^ 於發先二極體上之量子點層上（步驟S16)，保護層係由一 2材質製成。保護層可避免量子點層被損壞，保護層可 由透光之樹脂基（resin_based)之絕緣材料製成。 傳逆=光二極體塗佈保護層之後，可藉由傳輸系統110 傳送至紅乾燥單元m。第二乾燥單元⑺可使 極體上之保護層乾燥（步驟S17)。 ^陷發光二極體形成量子點層及保護層之後，第二 S18^早7^ 180可對發光二極體量測發光特徵值（步驟 非缺陷產品判斷單元181係判斷第二光檢測單元⑽ 15 201123527 = 發光特徵值之發光等級是否等於或大於參考發光 搞2 、級1至％、或其他等級），藉此判斷發光二 ° 非缺陷產品或一缺陷產品（步驟s 19 )。 如圖1〇所示為CIE色度座標圖，其係代表典型的頻 不色度座標，其中目標範圍入係代表在—特定色度（例如 白色〆）之-預設亮度。當一發光二極體已被修復而使其發 光特徵值落在目標範圍A，就代表其發光等級等於或大於 參考發光等級（例如等級！至5〇、或其他等級），在此狀 況下’非缺陷產品判斷單元181可傳送該非缺陷發光二極 體至非缺，產品收集單元190 (步驟S20)。藉此，即使發 光極體藉由第％檢測單元13〇量測之發光特徵值係落 在目標範圍A之外’意即其發光等級小於參考發光等級， 但只要其發光特徵值落在可修復範圍B内，修復裝置⑽ 皆可將一量子點層及一保護層形成於發光二極體上。结 果，發光二極體可被修復而改善其亮度或色度而成為非缺 陷發光二極體。並且，即使在形成量子點層及保護層之 後，若發光二極體之發光特徵值之發光等級被非缺陷產品 判斷單7L 181判斷為小於參考發光等級，可再重覆上述步 驟’並依據量子點選擇單元131所決定之修復量子點，而 將對應之量子點層及保護層形成於發光二極體上，或者捨 棄該發光二極體（步驟S21)。 圖8為本發明另—實施例之發光二極體修復裝置200 的示意圖。 凊參照圖8所示，發光二極體修復裝置2〇〇包含一發 16 201123527 光二極體分類單元210、複數收集單元220、複數修復單 元230以及一非缺陷產品收集單元290。各修復單元230 包含一饋送單元231、一量子點塗佈單元232、一第一乾 燥單元233、一保護層塗佈單元234、一第二乾燥單元235、 一光檢測單元236以及一非缺陷產品判斷單元237。另外， 發光二極體修復裝置200可包含一傳輸機構，例如一傳輸 系統，用以將發光二極體傳輸於發光二極體分類單元210 與收集單元220之間，以及收集單元220對修復單元230 之間，並且使發光二極體在修復單元230的各元件之間進 行傳輸。 以下請參照圖9之流程圖以說明本發明另一實施例之 發光二極體修復裝置200之作動。 當製成之發光二極體在一產品品質檢測台上時，發光 二極體分類單元210係量測由發光二極體所發出之光線之 發光特徵值，並判斷發光特徵值之發光等級，並且依據發 光等級來分類發光二極體（步驟S61)。發光特徵值例如是 關於色度或亮度之數位資訊，發光二極體分類單元210可 藉由一預設光檢測單元，依據所量測之發光特徵值而將發 光二極體分類為複數發光等級，例如256個等級。舉例來 說，發光二極體分類單元210可將發光等級等於或大於參 考發光等級（例如等級1至50、或其他等級）之發光二極 體分類為非缺陷產品。並且，發光二極體分類單元210可 將發光等級小於參考發光等級之發光二極體分類為缺陷 產品。此外，對於分類為缺陷產品之發光二極體，發光二 17 201123527 極體分類單元210可藉由參考儲存於圖6所示之資料庫之 資訊，並對應各別的發光等級而決定發光二極體之修復量 子點。 在發光二極體分類之後，發光二極體可藉由例如傳輸 系統之傳輸機構，依據不同的發光等級而傳輸至各別的收 集單元220内（步驟S62)。另外，發光二極體分類單元 210可將該些發光等級等於或大於參考發光等級（例如等 級1至50、或其他等級）之發光二極體傳送至非缺陷產品 收集單元290。 收集單元220可依據不同的發光等級來收集發光二極 體，且各收集單元220可使發光二極體設置於一治具内， 該治具係固定發光二極體並具有一預設電極可供電給發 光二極體。'治具可以一維方式或二維陣列來收集發光二極 體。 接著，收集於各收集單元220之發光二極體便可傳送 至對應之修復單元230 (步驟S63)，各修復單元230亦對 應各發光等級。 在發光二極體被收集且傳送至修復單元230並且發光 二極體分類單元210依據各別的發光等級決定修復量子點 之後，修復單元230可依據對應的修復量子點而將量子點 層形成於發光二極體之頂層上，並進行步驟S64至S71。 饋送單元231可依序將收集於治具之發光二極體、一 個一個地傳送至量子點塗佈單元232。在步驟S64中，量 子點塗佈單元232使用一量子點混合溶劑而在發光二極體 18 201123527 之頂層上進行塗佈。量子點混合溶劑係對應於一發光等級 並容置於一容器内，並經由量子點塗佈單元232之喷嘴排 出而形成於發光二極體之頂層上。量子點可為一化合物半 導體之奈米結晶，例如硫化鎘（CdS)、硒化鎘（CdSe)、 匕偏（CdTe)、石荒4匕在_ (ZnS)、石西4匕在年（ZnSe)、匕在辛 (ZnTe)、硫化汞（HgS)、砸化汞（HgSe)或碲化汞（HgTe)。 量子點混合溶劑可藉由混合一量子點及一擴散媒介（例如 曱苯、己烷或其他類似材料）而形成。量子點混合溶劑可 設置於一容器，該容器係與各別喷嘴連接。量子點混合溶 劑可經由喷嘴排出。此外，本發明可藉由其他方法來製造 多種的量子點混合溶劑。各量子點塗佈單元232可塗佈不 同的量子點混合溶劑，而量子點混合溶劑包含可改善色度 及亮度之量子點。 當各發光二極體塗佈量子點層並藉由傳輸系統傳送 至第一乾燥單元233時，第一乾燥單元233可使塗佈於發 光二極體之量子點混合溶劑乾燥（步驟S65)。 接著，當發光二極體藉由傳輸機構傳送至保護層塗佈 單元234時，保護層塗佈單元234可將一保護層形成於發 光二極體之量子點層上（步驟S66)，保護層係由一透光材 質製成。 當形成保護層之發光二極體藉由傳輸機構傳送至第 二乾燥單元235時，第二乾燥單元235可使保護層乾燥（步 驟 S67)。 在發光二極體形成量子點層與保護層之後，光檢測單 19 201123527 元236係量測具有量 特徵值（步驟S68)。 子點層與保δ蒦層之發光二極體之發光 、非缺陷產品判斷單元237係判斷光檢測單元236所量 測之發光二極體之發光特徵值之發料級是否等於或大 於參考發料級（例如等級1至50、或其他等級），.以莽 此判斷發光二極體為-非缺陷產品或-缺陷產品（步; S69)。 ν / 抑 如圖1〇所示為CIE色度座標圖，其係代表典型的顯 不色度座標’其中目標範圍A係代表在-特定色度（例如 白色）之-預設亮度。當一發光二極體已被修復而使郎 光特徵值落在目標範圍A，就代表其發光等級等於或大ς 參考發光等級（例如等級j至50、或其他等級）且其已修 復為非缺陷發光二極體，在此狀況下，非缺陷產品判斷單 凡237可傳送該非缺陷發光二極體至非缺陷產品收 2\9〇(步驟S7G)°藉此’即使發光二極體改被分類單元210 刀類為缺陷發光二極體，意即其發光特徵值落在目標範圍 A之外’且其發光等級小於參考發光等級，但只要盆 特徵值落在-可修復範圍B内，修復裝置細皆可將二 :=:保護層形成於發光二極體上。結果，發光二極 矽“是而改善其凴度或色度而成為非缺陷發光二極 _、’且’即使在形成量子點層及保護層之後，若發光二 極體之發光特徵值被非缺陷產品判斷單元2 3 7判斷^落: 目標範圍A之外，且其發光等級被判斷為小於參考發 級’可再重覆上述步驟’並再切量子點層及保護層形成 20 201123527 於發光二極體上，或者捨棄該發光二極體（步驟S71)。 綜上所述，本發明之發光二極體修復裝置及方法可針 對需要改善其發光特性之發光二極體，藉由使用一量子點 混合溶劑而將一量子點層塗佈於各發光二極體，藉此將發 光二極體修復為非缺陷產品，並使其具有改善之發光色度 或亮度，並因而增加產品良率。 以上所述僅為舉例性，而非為限制性者。任何未脫離 本發明之精神與範疇，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 圖1為一種習知發光二極體的示意圖； 圖2為另一種習知發光二極體的示意圖； 圖3為另一種習知發光二極體的示意圖； 圖4為本發明較佳實施例之一種發光二極體修復裝置 的不意圖， 圖5為本發明較佳實施例之一種發光二極體修復裝置 之作動的流程圖； 圖6為本發明較佳實施例之一種資料庫的示意圖，資 料庫係儲存對應各發光等級之所需量子點的資訊； 為7為本發明較佳實施例之一種量子點選擇單元的方 塊示意圖； 圖8為本發明較佳實施例之另一種發光二極體修復裝 21 201123527 置的不意圖； 圖9為圖8之發光二極體修復裝置之作動的流程圖； 以及 圖10為一種CIE色度座標圖。 【主要元件符號說明】 100 :發光二極體修復裝置 110 :傳輸系統 120 :饋送單元 130 :第一光檢測單元 131 :量子點選擇單元 140 :量子點塗佈單元 150 :第一乾燥單元 160 :保護層塗佈單元 170 ··第二乾燥單元 180 :第二光檢測單元 181 :非缺陷產品判斷單元 190 :非缺陷產品收集單元 200 :發光二極體修復裝置 210 :發光二極體分類單元 220 :收集單元 230 :修復單元 231 :饋送單元 232 :量子點塗佈單元 22 201123527 233 :第一乾燥單元 234 :保護層塗佈單元 235 :第二乾燥單元 236 :光檢測單元 237 :非缺陷產品判斷單元 290 :非缺陷產品收集單元 410 :發光等級判斷單元 420 :量子點決定單元 421 :量子點種類資料庫 430 :非缺陷產品傳輸單元 A :目標範圍 B :可修復範圍 23The light-emitting diode ' can be discarded if its light-emitting level belongs to a specific initial level H level 200 to 256, or other level). " § The illuminating characteristic of the illuminating diode measured by the first-light detecting unit 13G is equal to or greater than the illuminating level of the singer, the Ute test level... , or two: „, as shown in FIG. 6 , the other, and the other, the non-defective product transfer unit 43 〇 exclusive transmission, the light-emitting diode to the non-defective product collection unit 190. For example, the illuminance level determination unit 41G Judging that the light-emitting diode has a light-emitting level of one and is a missing (four) light diode, so that when a repairing defect layer is to be provided, the quantum dot determining unit repairs the quantum dot in a manner as described above. When the illuminance level determining unit 41 determines that the illuminating characteristic value measured by the first-green measuring unit 13() is equal to or greater than the reference illuminating level (for example, the level shown in FIG. 6 to 5 〇, or Other grades) 3 wins, non-defective product transfer unit · can transmit these light-emitting diodes to non-defective product collection units. Port... In addition, 'When a light-emitting diode repair quantum dot has been selected by quantum dots, - After the decision, it can be transmitted to the quantum dot by the transmission system 110 and the quantum dot coating unit 14G receives the selection by the quantum dot: the information about the repaired quantum dot is rotated by 131, and the corresponding information is used. Fixing the point - quantum dot The solvent is applied to the top layer of the light-emitting diode to form a step S14). The lining point coating unit 14 has a plurality of nozzles, and the nozzles respectively support the quantum dots. The quantum dot coating unit 14 can be repaired correspondingly. The nozzle of the quantum dot is discharged by exposing the quantum dot mixed solvent. 14 201123527 Here, the neutron point can be a nanocrystal of a compound semiconductor, such as cadmium sulfide (cds), 砸化录(CdSe>, 碎化录((10) ), zinc sulfide (ZnS), zinc zirconia (ZnSe), zinc hydride (ZnTe), sulphuric acid (postal), sillimanite (=gSe) or mercury hydride (HgTe). The quantum dot mixed solvent can be used The mixed-I sub-point and the diffusion medium (for example, toluene, hexane or other similar materials) are formed. The quantum dot mixed solvent may be disposed in a container connected to the respective nozzles. The quantum dot mixed solvent is discharged through the nozzle. In addition, the present invention can be used to fabricate a plurality of quantum dot mixed solution precursors after being coated with a quantum dot layer by other methods, and can be transferred to the first drying unit 15G by the transfer system. The first dry early 15G can be The quantum dot on the light-emitting diode is mixed with a solvent to dry. Next, when the light-emitting diode is coated by the transport system, the coating unit is called a protective layer coating unit (10), and the quantum dot layer on the first diode is secured. Upper (step S16), the protective layer is made of a material of 2. The protective layer can prevent the quantum dot layer from being damaged, and the protective layer can be made of a light-resistant resin-based insulating material. After the protective layer is applied, it can be transferred to the red drying unit m by the transmission system 110. The second drying unit (7) can dry the protective layer on the polar body (step S17). The trapped light-emitting diode forms a quantum dot layer and a protective layer. After that, the second S18^7:180 can measure the illuminating characteristic value of the illuminating diode (the step non-defective product judging unit 181 judges whether the illuminating level of the illuminating characteristic value is equal to or greater than the second illuminating unit (10) 15 201123527 The reference illuminating 2, level 1 to %, or other level) is thereby judged to emit a two-degree non-defective product or a defective product (step s 19). Figure 1A shows a CIE chromaticity coordinate map, which represents a typical frequency chromaticity coordinate, where the target range entanglement represents the preset brightness at a particular chromaticity (e.g., white 〆). When a light-emitting diode has been repaired so that its illuminating characteristic value falls within the target range A, it means that its illuminating level is equal to or greater than the reference illuminating level (for example, level! to 5 〇, or other level), in which case ' The non-defective product judging unit 181 can transfer the non-defective light emitting diode to the non-defective product collecting unit 190 (step S20). Thereby, even if the illuminating characteristic value measured by the ninth detecting unit 13 系 falls outside the target range A, that is, the illuminating level is smaller than the reference illuminating level, as long as the illuminating characteristic value falls within the repairable In the range B, the repairing device (10) can form a quantum dot layer and a protective layer on the light emitting diode. As a result, the light-emitting diode can be repaired to improve its brightness or chromaticity to become a non-defective light-emitting diode. Further, even after the quantum dot layer and the protective layer are formed, if the light-emitting level of the light-emitting characteristic value of the light-emitting diode is judged to be smaller than the reference light-emitting level by the non-defective product judgment sheet 7L 181, the above step 'can be repeated' and according to the quantum The repair quantum dot determined by the dot selection unit 131 forms a corresponding quantum dot layer and a protective layer on the light emitting diode, or discards the light emitting diode (step S21). FIG. 8 is a schematic diagram of a light-emitting diode repair apparatus 200 according to another embodiment of the present invention. Referring to FIG. 8, the light-emitting diode repair apparatus 2 includes a light-emitting 16 201123527 optical diode classification unit 210, a plurality of collection units 220, a plurality of repair units 230, and a non-defective product collection unit 290. Each repair unit 230 includes a feeding unit 231, a quantum dot coating unit 232, a first drying unit 233, a protective layer coating unit 234, a second drying unit 235, a light detecting unit 236, and a non-defective product. Judgment unit 237. In addition, the LED repair apparatus 200 can include a transmission mechanism, such as a transmission system, for transmitting the LEDs between the LED classification unit 210 and the collection unit 220, and the collection unit 220 to the repair unit. Between 230, and the light-emitting diodes are transferred between the components of the repair unit 230. Hereinafter, the operation of the light-emitting diode repair apparatus 200 according to another embodiment of the present invention will be described with reference to the flowchart of FIG. When the light-emitting diode is fabricated on a product quality inspection table, the light-emitting diode classification unit 210 measures the light-emitting characteristic value of the light emitted by the light-emitting diode, and determines the light-emitting level of the light-emitting characteristic value. And the light-emitting diodes are classified in accordance with the light-emitting level (step S61). The illuminating characteristic value is, for example, digital information about chromaticity or brightness. The illuminating diode classification unit 210 can classify the illuminating diode into a plurality of illuminating levels according to the measured illuminating characteristic value by using a preset photo detecting unit. , for example, 256 levels. For example, the light-emitting diode classifying unit 210 may classify the light-emitting diodes having a light-emitting level equal to or greater than a reference light-emitting level (e.g., levels 1 to 50, or other levels) as non-defective products. Also, the light emitting diode classifying unit 210 can classify the light emitting diodes having a light emitting level smaller than the reference light emitting level into defective products. In addition, for a light-emitting diode classified as a defective product, the light-emitting diode 17 201123527 polar body classification unit 210 can determine the light-emitting diode by referring to the information stored in the database shown in FIG. 6 and corresponding to the respective light-emitting levels. Body repair quantum dots. After the classification of the light-emitting diodes, the light-emitting diodes can be transferred to the respective collection units 220 according to different illumination levels by, for example, a transmission mechanism of the transmission system (step S62). In addition, the light emitting diode classification unit 210 may transmit the light emitting diodes having the light emitting levels equal to or greater than the reference light emitting levels (e.g., the levels 1 to 50, or other levels) to the non-defective product collecting unit 290. The collecting unit 220 can collect the light emitting diodes according to different light emitting levels, and each collecting unit 220 can set the light emitting diodes in a fixture, the fixture fixing the light emitting diodes and having a predetermined electrode. Power is supplied to the light-emitting diode. 'The fixture can collect light-emitting diodes in a one-dimensional or two-dimensional array. Then, the light-emitting diodes collected in each of the collecting units 220 can be transferred to the corresponding repairing unit 230 (step S63), and each repairing unit 230 also corresponds to each light-emitting level. After the light emitting diodes are collected and transmitted to the repair unit 230 and the light emitting diode classification unit 210 determines the repair quantum dots according to the respective light emission levels, the repair unit 230 may form the quantum dot layer according to the corresponding repair quantum dots. On the top layer of the light-emitting diode, steps S64 to S71 are performed. The feeding unit 231 can sequentially transmit the light-emitting diodes collected in the jig to the quantum dot coating unit 232 one by one. In step S64, the quantum dot coating unit 232 coats on the top layer of the light-emitting diode 18 201123527 using a quantum dot mixed solvent. The quantum dot mixed solvent corresponds to a light-emitting level and is housed in a container and discharged through the nozzle of the quantum dot coating unit 232 to be formed on the top layer of the light-emitting diode. The quantum dot can be a nanocrystal of a compound semiconductor, such as cadmium sulfide (CdS), cadmium selenide (CdSe), yttrium (CdTe), shovel 4 匕 in _ (ZnS), ishixi 4 匕 in years (ZnSe ), bismuth (ZnTe), mercury sulphide (HgS), mercury hydride (HgSe) or mercury hydride (HgTe). The quantum dot mixed solvent can be formed by mixing a quantum dot and a diffusion medium such as toluene, hexane or the like. The quantum dot mixed solvent can be disposed in a container which is connected to the respective nozzles. The quantum dot mixed solvent can be discharged through a nozzle. Further, the present invention can produce a plurality of quantum dot mixed solvents by other methods. Each quantum dot coating unit 232 can coat different quantum dot mixed solvents, and the quantum dot mixed solvent contains quantum dots which can improve chroma and brightness. When each of the light-emitting diodes is coated with the quantum dot layer and transported to the first drying unit 233 by the transport system, the first drying unit 233 can dry the quantum dot mixed solvent applied to the light-emitting diode (step S65). Then, when the light emitting diode is transferred to the protective layer coating unit 234 by the transport mechanism, the protective layer coating unit 234 can form a protective layer on the quantum dot layer of the light emitting diode (step S66), the protective layer It is made of a light-transmissive material. When the light-emitting diode forming the protective layer is transferred to the second drying unit 235 by the transport mechanism, the second drying unit 235 can dry the protective layer (step S67). After the quantum dot layer and the protective layer are formed by the light-emitting diode, the light detecting unit 19 measures the characteristic value (step S68). The light-emitting and non-defective product judging unit 237 of the light-emitting diode of the sub-dot layer and the δ-protected layer determines whether the emission level of the light-emitting characteristic value of the light-emitting diode measured by the light detecting unit 236 is equal to or greater than the reference hair. The material level (for example, level 1 to 50, or other grade), in order to judge the light-emitting diode as a non-defective product or a defective product (step; S69). ν / 如图 As shown in Fig. 1C, the CIE chromaticity coordinate map represents a typical chromaticity coordinate 'where the target range A represents the preset brightness at a specific chromaticity (for example, white). When a light-emitting diode has been repaired so that the Lang light feature value falls within the target range A, it means that its light-emitting level is equal to or greater than the reference light-emitting level (for example, level j to 50, or other level) and it has been repaired to a non- Defective light-emitting diode, in this case, the non-defective product judgment unit 237 can transmit the non-defective light-emitting diode to the non-defective product to receive 2\9〇 (step S7G) ° thereby 'even if the light-emitting diode is changed The classification unit 210 is a defective light-emitting diode, that is, the light-emitting characteristic value falls outside the target range A' and its light-emitting level is smaller than the reference light-emitting level, but as long as the pot characteristic value falls within the repairable range B, repair The device can be formed by two: =: a protective layer is formed on the light emitting diode. As a result, the light-emitting diode "is improved in its twist or chromaticity to become a non-defective light-emitting diode," and "even after the formation of the quantum dot layer and the protective layer, if the light-emitting characteristic value of the light-emitting diode is not The defective product judging unit 2 3 7 judges that the falling range is outside the target range A, and the illuminating level is judged to be smaller than the reference level 'can repeat the above step' and the quantum dot layer and the protective layer are formed again. On the diode, the light-emitting diode is discarded (step S71). In summary, the light-emitting diode repairing apparatus and method of the present invention can be used for a light-emitting diode that needs to improve its light-emitting characteristics by using one The quantum dot is mixed with a solvent to apply a quantum dot layer to each of the light emitting diodes, thereby repairing the light emitting diode to a non-defective product, and having an improved luminescent color or brightness, thereby increasing product yield The above description is intended to be illustrative, and not restrictive, and any equivalents and modifications may be included in the scope of the appended claims. Figure BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a conventional light-emitting diode; FIG. 2 is a schematic view of another conventional light-emitting diode; FIG. 3 is a schematic view of another conventional light-emitting diode; FIG. 5 is a flow chart of an operation of a light-emitting diode repairing device according to a preferred embodiment of the present invention; FIG. 6 is a flow chart of a preferred embodiment of the present invention; A schematic diagram of a library for storing information of desired quantum dots corresponding to respective illuminating levels; 7 is a block diagram of a quantum dot selecting unit of a preferred embodiment of the present invention; FIG. 8 is another embodiment of the preferred embodiment of the present invention FIG. 9 is a flow chart of the operation of the light-emitting diode repair device of FIG. 8; and FIG. 10 is a CIE chromaticity coordinate map. [Main component symbol description] 100 Light-emitting diode repairing device 110: transport system 120: feeding unit 130: first light detecting unit 131: quantum dot selecting unit 140: quantum dot coating unit 150: first drying unit 160: protective layer coating Cloth unit 170··second drying unit 180: second light detecting unit 181: non-defective product judging unit 190: non-defective product collecting unit 200: light emitting diode repairing device 210: light emitting diode sorting unit 220: collecting unit 230: repair unit 231: feed unit 232: quantum dot coating unit 22 201123527 233: first drying unit 234: protective layer coating unit 235: second drying unit 236: light detecting unit 237: non-defective product judging unit 290: Non-defective product collection unit 410: illumination level determination unit 420: quantum dot determination unit 421: quantum dot type database 430: non-defective product transmission unit A: target range B: repairable range 23