KR101650390B1 - Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating - Google Patents

Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating Download PDF

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KR101650390B1
KR101650390B1 KR1020090086310A KR20090086310A KR101650390B1 KR 101650390 B1 KR101650390 B1 KR 101650390B1 KR 1020090086310 A KR1020090086310 A KR 1020090086310A KR 20090086310 A KR20090086310 A KR 20090086310A KR 101650390 B1 KR101650390 B1 KR 101650390B1
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South Korea
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quantum dot
emitting diode
light emitting
light
quantum
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KR1020090086310A
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Korean (ko)
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KR20110028737A (en
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김원남
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주식회사 탑 엔지니어링
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Priority to KR1020090086310A priority Critical patent/KR101650390B1/en
Priority to TW99115970A priority patent/TW201110406A/en
Priority to JP2012528732A priority patent/JP2013504870A/en
Priority to PCT/KR2010/003232 priority patent/WO2011030993A1/en
Priority to CN2010800515188A priority patent/CN102630350A/en
Publication of KR20110028737A publication Critical patent/KR20110028737A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a light emitting diode capable of repairing a light emitting diode as a good product having improved light emission hue and brightness by improving the production yield by forming a quantum dot layer on the light emitting diode selected as a defective product by measuring the light emitting property value of the manufactured light emitting diode Repair method and apparatus. A method of repairing a light emitting diode according to an embodiment of the present invention includes the steps of measuring a light emitting property of a light emitting diode, discriminating a corresponding light emitting diode whose measured light emitting characteristic value is out of a target range to a defective light emitting diode, And forming a quantum dot layer on the uppermost layer of the diode.

LED, good product, defective product, quantum dot, repair, color coordinate

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting diode repair method and apparatus using a quantum dot coating,

The present invention relates to a method and an apparatus for repairing a light emitting diode, and more particularly, to a method and apparatus for repairing a light emitting diode by measuring a light emitting characteristic value of a manufactured light emitting diode (LED) and forming a quantum dot layer in a light emitting diode To a repair method and an apparatus for repairing a light emitting diode which can repair a light emitting diode as an improved good product and improve a production yield.

LEDs are fabricated on the basis of III-V nitride semiconductors such as GaN. The LED is basically manufactured by bonding a P-type nitride semiconductor layer and an N-type nitride semiconductor layer in which a P-type or N-type impurity is added to the nitride semiconductor as described above, and a P-type nitride semiconductor layer and an N-type nitride semiconductor An active layer is interposed between the layers to increase the recombination ratio of the electron-holes, thereby improving the luminance characteristics of the LED.

As shown in FIG. 1, a typical LED is manufactured such that each of the P-type nitride semiconductor layer and the N-type nitride semiconductor layer is connected to the external electrode, and LEDs to which power is applied to the two electrodes can emit light of a visible light wavelength.

In addition, in recent years, in order to improve the luminance characteristic or to change the luminescent color, an attempt to appropriately insert the quantum dot layer into an appropriate position of the basic LED structure composed of the P type nitride semiconductor layer, the active layer and the N type nitride semiconductor layer .

Further, as shown in FIG. 2, the LED having the fluorescent layer coated on the multilayer structure as described above can be manufactured, and the LED having such a structure can improve the luminance characteristic. The LED having the quantum dot layer coated thereon can be fabricated on the multi-layer structure as described above. The LED having such a structure can change the emission color and improve the luminance characteristic. For example, in the structure of FIG. 3, an LED having a structure that emits blue light before applying the quantum dot layer may be an LED that emits white light by applying a quantum dot layer for emitting light of a yellow wavelength band.

As described above, the LED can be manufactured with a structure in which the quantum dot layer is appropriately inserted at a proper position of the basic LED structure in addition to the basic structure composed of the P-type nitride semiconductor layer, the active layer, and the N-type nitride semiconductor layer. A high-luminance LED of various luminescent colors may be produced by applying a fluorescent layer, a quantum dot layer, or the like to the outside of the uppermost layer.

However, when fabricating LEDs having various structures as described above, power is applied to the LEDs as shown in FIG. 4 in the goodness test stage after all the manufacturing processes. When the light emission intensity of the LEDs is measured using a photodetector, LED will emerge. In order to produce low-cost LEDs with high luminous efficiency, it is necessary to reduce defective products by improving the color and brightness characteristics of LEDs determined to be defective, because the production yield of LEDs affects the unit price of sales.

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems, and it is an object of the present invention to provide a light emitting diode having a light emitting diode, And a method of repairing a light emitting diode capable of repairing a light emitting diode as a non-defective product and improving a production yield.

According to one aspect of the present invention, there is provided a repair method of a light emitting diode, comprising: measuring a light emission characteristic value of a light emitting diode; Determining the corresponding light emitting diode whose measured light emission characteristic value is out of the target range as a defective light emitting diode; And forming a quantum dot layer on the uppermost layer of the defective light emitting diode.

The emission characteristic value includes a digital value for hue or luminance.

The step of forming the quantum dot layer includes a step of applying a solution in which quantum dots made of semiconductor nanocrystals are mixed in a dispersion solvent onto the uppermost layer of the poor light emitting diode and drying the solution.

The step of forming the quantum dot layer may include measuring a light emission characteristic value for light after passing the light emitted from the defective light emitting diode through the quantum dot cell selected from a quantum dot mask in which a plurality of quantum dot cells are formed when the defective light emitting diode is operated step; Determining a repair quantum dot by comparing a measured light emission characteristic value with a target range for light after passing through the quantum dot cell; And forming a quantum dot layer on the uppermost layer of the defective light emitting diode using the quantum dot mixed solution corresponding to the determined repair quantum dot.

Determining the repair quantum dots includes determining a quantum dots used in the selected quantum dots as the repair quantum dots if the light emission characteristic value measured for light passed through the quantum dots cell is within a target range; And controlling the light emission characteristics of the other quantum cells of the quantum dot mask to be remeasured if the light emission characteristic value measured for the light passed through the quantum dot cell is out of the target range.

The step of measuring light emission characteristic values for light after passing through the quantum dot cell includes sequentially passing light from the defective light emitting diode through the quantum dot cells having a multi-layer structure including the quantum dot cells selected one by one in each of the plurality of quantum dot masks And measuring the light emission characteristic value with respect to the light after the light emission.

The determining of the repair quantum dots may include comparing the quantum dots used in the combination of the quantum dot cells selected in the plurality of quantum dots with the repair quantum dots, ; And quantum dot cells having a multilayer structure including a quantum dot cell selected from at least one of the plurality of quantum dot masks when a light emission characteristic value measured for light passing through the quantum dot cells is out of a target range, And controlling the light emission characteristic value to be remeasured.

The forming of the quantum dot layer includes forming a quantum dot layer on the uppermost layer of the defective light emitting diode using a quantum dot mixed solution corresponding to a combination of the quantum dot cells determined as the repair quantum dot.

The forming of the quantum dot layer may include forming a quantum dot layer having a multilayer structure on the uppermost layer of the defective light emitting diode with a quantum dot mixed solution corresponding to each of the quantum dot cells determined as the repair quantum dot.

According to another aspect of the present invention, there is provided a repair apparatus for a light emitting diode, comprising: light detecting means for measuring a light emitting property value of the light emitting diode; Discriminating means for discriminating the corresponding light emitting diode whose measured light emission characteristic value is out of the target range as a defective light emitting diode; And quantum dot coating means for forming a quantum dot layer on the uppermost layer of the defective light emitting diode.

The repair apparatus of the light emitting diode includes: a quantum dot mask in which a plurality of quantum dot cells are formed; And a repair controller for controlling the quantum dot coating means by determining the repair quantum dots by comparing light emission characteristic values measured with respect to light emitted from the defective light emitting diode through the quantum dot cell selected in the quantum dot mask and a target range, The quantum dot coating unit may form a quantum dot layer on the uppermost layer of the defective light emitting diode using a quantum dot mixed solution corresponding to the determined repair quantum dot.

Wherein the repair controller determines the quantum dots used in the selected quantum dot cell as the repair quantum dots when the emission characteristic value measured for the light passing through the quantum dots cell is within the target range, A quantum dot determination unit for generating a control signal for re-measuring the light emission characteristic value when the measured light emission characteristic value is out of a target range; And a movement control unit for controlling the quantum dot cell in the direction of the light emitted from the defective light emitting diode in the quantum dot mask according to the control signal.

The repair apparatus of the light emitting diode may further include second light detecting means for measuring a light emission characteristic value of light passing through the quantum dot cell.

Wherein the quantum dot mask comprises a plurality of quantum dot masks each having a plurality of quantum dot cells formed therein, wherein the repair controller is operable to cause the quantum dot cells of the multi-layer structure including the quantum dot cells selected one by one in each of the plurality of quantum dot masks, The repair quantum dots can be determined by comparing the light emission characteristic values measured with respect to light after sequentially passing light from the diode and the target range.

Wherein the quantum dot determination unit determines the quantum dots used in the combination of the quantum dot cells selected in the plurality of quantum dots masks as the repair quantum dots when the light emission characteristic value measured for light passing through the quantum dot cells is within a target range, And generates a second control signal to re-measure the light emission characteristic when the measured light emission characteristic value for light passing through the quantum dot cells is out of a target range, The movement of the plurality of quantum dots may be driven such that the quantum dot cells of the multi-layered structure including the quantum dot cells changed in at least one of the plurality of quantum dot masks are in the direction of light emitted from the defective light emitting diode.

The quantum dot coating unit may form a quantum dot layer on the uppermost layer of the defective light emitting diode using a quantum dot mixed solution corresponding to a combination of the quantum dot cells determined as the repair quantum dot.

The quantum dot coating unit may form a multi-layered quantum dot layer on the uppermost layer of the defective light emitting diode with a quantum dot mixed solution corresponding to each of the quantum dot cells determined as the repair quantum dot.

According to the method and apparatus for repairing a light emitting diode according to the present invention, it is possible to improve production yield by repairing a light emitting diode selected as a defective product with a quantum dot mixed solution so as to repair the light emitting diode as a good product with improved light emission color and brightness.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. Like reference symbols in the drawings denote like elements.

5 is a view for explaining a repair apparatus 10 of a light emitting diode according to an embodiment of the present invention.

5, a repair apparatus 10 of a light emitting diode according to an embodiment of the present invention includes a quantum dot mask 12, a photodetector 13, a quantum dot dispenser 14, and a repair controller 15, And may also include a conveyor system 11.

In the present invention, power is applied in the goodness test of the manufactured LED, the light emission characteristic value of light emitted from the LED is measured using the photodetector 13, and the light emission characteristic value (color or luminance Of the semiconductor laminated structure constituting the defective LED is determined as a defective LED and the light emitting characteristics such as the color and brightness of the defective LED are improved by using a predetermined quantum dot coating means. Emitting diode repairing apparatus 10 capable of repairing an LED as a good product having improved light-emitting hue and brightness by forming a quantum dot layer on the light-emitting diode.

In Fig. 5, the conveyor system 11 is capable of transporting a defective LED whose emission characteristic value (digital value for hue or luminance) is out of the target range to the lower portion of the quantum dot mask 12.

The quantum dot mask 12 includes a plurality of quantum dot cells (for example, A to F) formed on a transparent material such as a resin system. The quantum dot mask 12 is formed with a plurality of quantum dot cells having light emission wavelength characteristics different from each other when light is passed as shown in Fig. The quantum dots may be made of compound semiconductor nanocrystals such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, and HgTe, and a quantum dot mixed solution obtained by mixing the compound semiconductor nanocrystals with a dispersion solvent (for example, toluene, A plurality of quantum dot cells (e.g., A to F) may be formed on the quantum dot mask 12 by being applied to various positions on the quantum dot mask 12 and dried.

As shown in Fig. 7, two quantum dot masks 71 and 72 having a multilayer structure may be used as the quantum dot mask 12. For example, a plurality of quantum dots (A, B, C / Q, R, and S) having different emission wavelength characteristics when light is passed through are previously formed in each of the two quantum dot masks 71 and 72 , And quantum dot cells in the respective masks may be selected so that light emission wavelength characteristics of light passing through a plurality of quantum dot cells of the corresponding multi-layer structure may be different from each other. Although two quantum dot masks 71 and 72 are used here, it is not limited thereto, and it is not excluded to use three or more quantum dot masks.

The photodetector 13 may be a multi-layered structure including a quantum dot cell in which the light emitted from the defective LED passes through the quantum dot cell selected in the quantum dot mask 12 or the quantum dot cell is selected one by one in each of the plurality of quantum dot masks 71 and 72 It is possible to measure the emission characteristic value of light emitted from the defective LED sequentially through the quantum dot cells. Here, the photodetector 13 can generate information (digital value) about the color of light by analyzing the spectrum (or wavelength) of the input light or analyze the intensity of the input light (Digital value) about the luminance of the light through the light source.

According to the result of the measurement by the photodetector 13 for the light emitted from the defective LED through the quantum dot mask 12 or the plurality of quantum dots masks 71 and 72, the repair controller 15 controls the photodetector 13 ) Is compared with a predetermined target range to determine the repair quantum dots and controls the quantum dot dispenser 14.

The quantum dot dispenser 14 may apply the quantum dot mixed solution to the uppermost layer of the defective LED using the quantum dot mixed solution corresponding to the repair quantum dot determined by the repair controller 15 to form a quantum dot layer. The quantum dot dispenser 14 has a plurality of containers (for example, A 'to F') in which the emission wavelength characteristics are differentiated and contain the quantum dot mixed solutions, and the corresponding quantum dot The solution can be selected and coated on top of the defective LED. Quantum dots made of compound semiconductor nanocrystals such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe and HgTe are dispersed in a dispersion solvent (for example, toluene, Can be mixed with a quantum dot mixed solution. When the quantum dot mixed solution of the container corresponding to the repair quantum dot is coated on the uppermost layer of the defective LED, the mixed solution of the quantum dot can be manufactured by other methods, Improvement effect can be shown. As described above, after the application of the quantum dot mixed solution, it may be dried by a predetermined drying apparatus, and if necessary, a transparent resin-based insulating material may be coated thereon.

8 is a block diagram of a repair controller 15 according to one embodiment of the present invention. Referring to FIG. 8, the repair controller 15 according to an embodiment of the present invention includes a quantum dot determination unit 21 and a movement control unit 22.

The quantum dot determination unit 21 determines the light emission characteristic value measured by the photodetector 13 with respect to light emitted from the defective LED through the quantum dot mask 12 or the plurality of quantum dot masks 71 and 72 It is possible to determine the repair quantum dots according to whether the target range is deviated from the target range or generate a control signal to re-measure the emission characteristics of the defective LED.

The movement control section 22 controls the combination of the quantum dot mask 12 or the combination of other quantum cells or other quantum dot cells of the plurality of quantum dot masks 71 and 72 in accordance with a control signal from the quantum dot determination section 21, Or the rotational movement of the quantum dot mask 12 or the plurality of quantum dot masks 71, 72 so as to be in the direction of the dotted line. Accordingly, the photodetector 13 can re-measure the luminescence property value for the combination of the quantum dot cell or the quantum dot cell.

Hereinafter, the operation of the repair apparatus 10 of the light emitting diode according to the embodiment of the present invention will be described in more detail with reference to the flowchart of FIG.

First, power is applied to the LED in the goodness test step of the produced LED, and the light emission characteristic value of the light emitted from the LED is measured using the photodetector 13 or other light detecting means. As a result, And a defective LED whose digital value for brightness deviates from the target range (A) (S110). For example, in a case where a range A indicating a constant luminance in a certain color (for example, white) in the CIE (Commission International de I'Edairage) color coordinate system showing a general display color coordinate is in the target range as shown in FIG. 10, If the digital value for the measured color or brightness, which is measured through the detection means, for example, deviates from the target range A, it can not be released as an LED for sale and can be discarded.

In the present invention, even if the light emission characteristic value measured through the light detection means deviates from the target range (A), if the defective LED having the light emission characteristic value within the repair range (B) is collected, By forming a quantum dot layer on the LED, the LED can be repaired as a good product with improved light emission color and brightness.

The defective LED as described above may be transferred to the lower portion of the quantum dot mask 12 through the conveyor system 11 (S120). 6, a plurality of quantum dot cells (for example, A to F) having different emission wavelength characteristics are formed in advance in the quantum dot mask 12 as shown in FIG. 6, One of the quantum dot cells on the quantum dot mask 12 may be transported over the defective LED to measure the value of the light emission characteristic for the light after passing through the defect LED.

If any one of the quantum dots of the quantum dot mask 12 is placed on the defective LED, power can be supplied to the defective LED to emit light (S130). At this time, the defective LED is fixed to a predetermined jig having a small terminal capable of supplying power, and can emit light.

Accordingly, the photodetector 13 can measure the light emission characteristic value of light emitted from the defective LED through the quantum dot cell selected in the quantum dot mask 12 (S140). The photodetector 13 can generate information (digital value) about the color of light through analyzing the spectrum (or wavelength) of the input light or analyze the light intensity of the input light, (Digital value) relating to the luminance of the display device.

In accordance with the result of the measurement by the photodetector 13 with respect to the light emitted from the defective LED passing through the quantum dot mask 12, the repair controller 15 determines the light emission characteristic value measured in the photodetector 13 And compares it with the target range (S150). For example, the quantum dot determination unit 21 of the repair controller 15 determines that the light emitted from the defective LED has a light emission characteristic value measured by the photodetector 13 with respect to light emitted through the quantum dot cell of the quantum dot mask 12 If the target range is not deviated from the predetermined target range, the quantum dots used in the selected quantum dots cell can be determined as the corresponding repair quantum dots (S170).

The quantum dot determination unit 21 compares the light emitted from the defective LED with the light emitted from the defect mask 12 through the photodetector 13 to a target range previously determined by the photodetector 13, A control signal can be generated to re-measure the light emission characteristic value of the surface defective LED. Here, the target range may be a predetermined digital value such that the emission characteristic value falls within the target range A in the CIE chromaticity coordinate system as shown in FIG. The movement control section 22 can drive the rotation movement of the quantum dot mask 12 such that the other quantum cells of the quantum dot mask 12 are in the direction of the light emitted from the defective LED in accordance with the control signal from the quantum dot determination section 21 (S160).

Accordingly, when another quantum dot cell of the quantum dot mask 12 comes in the direction of the light emitted from the defective LED, in the process of measuring the light emission characteristic value by the photodetector 13 as described above, The operation of comparing the target range, and the process of changing to the other quantum cells of the quantum dot mask 12 may be repeated.

If a plurality of quantum dots masks 71 and 72 as shown in FIG. 7 are used, the photodetector 13 in the step S140 detects one by one in each of the plurality of quantum dots masks 71 and 72 It is possible to measure the emission characteristic value of light emitted from the defective LED sequentially through the quantum dot cells having a multi-layer structure including the selected quantum dot cell. At this time, the quantum dot determination unit 21 of the repair controller 15 determines that the light from the defective LED has been measured by the photodetector 13 with respect to the light passing through the combination of the quantum dots of the plurality of quantum dots masks 71, 72 The quantum dots used in the combination of the quantum dot cells selected in the plurality of quantum dots masks 71 and 72 can be determined as the corresponding repair quantum dots if the emission characteristic value does not deviate from the target range as compared with the predetermined target range in operation S170.

The use of the plurality of quantum dots masks 71 and 72 allows the combination of different quantum dot cells or other quantum dot cells to be rotated in the direction of light emanating from the defective LEDs by rotating the quantum dot mask 12 or the plurality of quantum dot masks 71 and 72 Movement can be driven. Accordingly, the photodetector 13 can re-measure the luminescence property value for the combination of the quantum dot cell or the quantum dot cell.

The quantum dot determination unit 21 determines the light emission characteristic values measured by the photodetector 13 with respect to light emitted from the defective LEDs through the combination of quantum dots of the plurality of quantum dots masks 71 and 72, It is possible to generate a control signal to re-measure the emission characteristic value of the defective LED. Here, the target range may be a predetermined digital value such that the emission characteristic value falls within the target range A in the CIE chromaticity coordinate system as shown in FIG. The movement control unit 22 controls the quantum dots of the corresponding multi-layered structure including the quantum dot cells changed in at least one of the plurality of quantum dots masks 71 and 72 from the defective LEDs in accordance with a control signal from the quantum dot determination unit 21 The rotational movement of the plurality of quantum dot masks 71 and 72 can be driven so as to be in the direction of light (S160). Here, only the lower mask 71 among the plurality of the quantum dots masks 71 and 72 may be rotated to change and select only the lower quantum cell, and only the upper mask 72 may be rotated to change and select only the upper quantum dot cell Or all of the plurality of quantum dots masks 71 and 72 may be rotated so that both quantum dots on both sides are changed and selected.

Accordingly, when the quantum dot cells of the multi-layered structure including the quantum dot cell selected by any one or more of the plurality of quantum dot masks 71 and 72 come in the direction of light emitted from the defective LED, The operation for determining the repair quantum dots such as the process of comparing the emission characteristic value with the target range and the process of changing to the other quantum dots cell of the quantum dot mask 12 may be repeated have.

After the quantum dot determination unit 21 determines the repair quantum dots according to the above procedure, the information about the repair quantum dots can be transmitted to the quantum dot dispenser 14 (S180).

The quantum dot dispenser 14 may apply the quantum dot mixed solution onto the uppermost layer of the defective LED using the quantum dot mixed solution according to the repair quantum dot information determined by the quantum dot determination unit 21 (S190). The quantum dot dispenser 14 has a plurality of containers (for example, A 'to F') in which the emission wavelength characteristics are differentiated and contain the quantum dot mixed solutions, The mixed solution can be selected and coated on the uppermost layer of the defective LED. For example, when the quantum dot cell A is determined to be a repair quantum dot in the quantum dot determination section 21, the quantum dot dispenser 14 can discharge the solution in the quantum dot mixture solution container A ' have.

The quantum dot cell A of the lower mask 71 and the quantum dots of the lower mask 72 of the lower mask 72 in the quantum dot determination unit 21 are used in the case where a plurality of quantum dot masks 71, Cell Q may be determined as a repair quantum dot. At this time, the quantum dot dispenser 14 may coat the solution on the uppermost layer of the defective LED by discharging the solution from a suitable solution container for a quantum dot. In this case, the quantum dot dispenser 14 applies a quantum dot (for example, A ', Q') corresponding to each of the quantum dot cells (for example, A and Q) determined as the repair quantum dot The multi-layered quantum dot mixed solution may be applied. That is, it can be coated with the quantum dot mixed solution A 'and then coated with the quantum dot mixed solution Q'. Although the Q 'container is not shown in FIG. 5, the container can be added.

After the application of the quantum dot mixed solution using the quantum dot mixed solution as described above, it may be dried by a predetermined drying apparatus, and if necessary, a transparent resin insulating material may be coated thereon to form the quantum dot layer.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

1 is an example of a structure of a general light emitting diode.

2 is another example of the structure of a general light emitting diode.

3 is another example of the structure of a general light emitting diode.

4 is a view for explaining light emission intensity measurement of a general light emitting diode.

5 is a view for explaining a repair apparatus for a light emitting diode according to an embodiment of the present invention.

6 is a view for explaining a quantum dot mask according to an embodiment of the present invention.

7 is a view for explaining measurement of light emission characteristics using a quantum dot mask according to another embodiment of the present invention.

8 is a block diagram of a repair controller in accordance with an embodiment of the present invention.

9 is a flowchart illustrating an operation of a repair apparatus for a light emitting diode according to an embodiment of the present invention.

10 is a diagram for explaining a general CIE color coordinate system.

Claims (17)

Measuring a light emission characteristic value of the light emitting diode; Determining the corresponding light emitting diode whose measured light emission characteristic value is out of the target range as a defective light emitting diode; And Forming a quantum dot layer on the uppermost layer of the defective light emitting diode, The step of forming the quantum dot layer includes: Measuring a light emission characteristic value of light emitted from the defective light emitting diode after passing the defective light emitting diode through a quantum dot cell selected from a quantum dot mask having a plurality of quantum dot cells when the defective light emitting diode is operated; Determining a repair quantum dot by comparing a measured light emission characteristic value with a target range for light after passing through the quantum dot cell; And And forming a quantum dot layer on the uppermost layer of the defective light emitting diode using the quantum dot mixed solution corresponding to the determined repair quantum dot. The method of claim 1, wherein the light emission characteristic value includes a digital value for hue or luminance. The method of claim 1, wherein forming the quantum dot layer comprises: Applying a solution in which quantum dots made of predetermined semiconductor nanocrystals are mixed in a dispersion solvent onto the uppermost layer of the defective light emitting diode and drying And a light emitting diode (LED). delete 2. The method of claim 1, wherein determining the repair quantum point comprises: Determining a quantum dot used for the selected quantum dot cell as the repair quantum dot if the measured light emission characteristic value for the light passed through the quantum dot cell is within a target range; And And controlling the light emission characteristic value to be remeasured to the other quantum cells of the quantum dot mask when the light emission characteristic value measured for the light passed through the quantum dot cell is out of the target range And a light emitting diode (LED). The method of claim 1, wherein measuring the light emission characteristic value for light after passing through the quantum- A step of measuring a light emission characteristic value for light after sequentially passing light from the defective light emitting diode to quantum dot cells of a multi-layered structure including a quantum dot cell selected one by one in each of a plurality of quantum dot masks And a light emitting diode (LED). 7. The method of claim 6, wherein determining the repair quantum point comprises: Determining the quantum dots used in the combination of the quantum dot cells selected in the plurality of quantum dots as the repair quantum dots when the light emission characteristic value measured for light passing through the quantum dot cells is within a target range; And Layer quantum dot cells including a quantum dot cell selected from among the plurality of quantum dot cells when the emission characteristic value measured for light passing through the quantum dot cells is out of a target range, Controlling the characteristic value to be remeasured And a light emitting diode (LED). 8. The method of claim 7, wherein forming the quantum dot layer comprises: Forming a quantum dot layer on the uppermost layer of the defective light emitting diode using a quantum dot mixed solution corresponding to a combination of the quantum dot cells determined as the repair quantum dot And a light emitting diode (LED). 8. The method of claim 7, wherein forming the quantum dot layer comprises: Forming a quantum dot layer of a multilayer structure on the uppermost layer of the defective light emitting diode with a quantum dot mixed solution corresponding to each of the quantum dot cells determined as the repair quantum dot And a light emitting diode (LED). Light detecting means for measuring a light emitting characteristic value of the light emitting diode; Discriminating means for discriminating the corresponding light emitting diode whose measured light emission characteristic value is out of the target range as a defective light emitting diode; Quantum dot coating means for forming a quantum dot layer on the uppermost layer of the defective light emitting diode; A quantum dot mask in which a plurality of quantum dot cells are formed; And And a repair controller for controlling the quantum dot coating means by determining the repair quantum dots by comparing the light emission characteristic value measured with respect to the light emitted from the defective light emitting diode through the quantum dot cell selected in the quantum dot mask and the target range and, Wherein the quantum dot coating means forms a quantum dot layer on the uppermost layer of the defective light emitting diode using a quantum dot mixed solution corresponding to the determined repair quantum dot. delete 11. The system of claim 10, wherein the repair controller comprises: A quantum dot used for the selected quantum dot cell is determined as the repaired quantum dot when the light emission characteristic value measured for the light passing through the quantum dot cell is within the target range, A quantum dot determination unit for generating a control signal to re-measure the light emission characteristic value when the value is out of a target range; And And controls the other quantum cells in the quantum dot mask to be in the direction of light emitted from the defective light emitting diode in accordance with the control signal. And a light emitting diode (LED). 13. The light-emitting device according to claim 12, further comprising: second light-detecting means Further comprising a light emitting diode (LED). 13. The quantum dot mask of claim 12, A plurality of quantum dots masks each having a plurality of quantum dot cells formed therein, The repair controller includes: Through the quantum dot cell having the multi-layered structure including the quantum dot cells selected one by one in each of the plurality of quantum dot masks, the light emission characteristic value measured for the light after passing the light from the defective light emitting diode sequentially, And the repair quantum dots are determined. 15. The method of claim 14, The quantum- Determining the quantum dots used in the combination of the quantum dot cells selected in the plurality of quantum dots masks as the repair quantum dots when the light emission characteristic value measured for light passing through the quantum dot cells is within a target range, And generates a second control signal to re-measure the light emission characteristic value when the measured light emission characteristic value for the light passed through is out of the target range, The movement control unit, And moving the plurality of quantum dots according to the second control signal so that the quantum dot cells of the multi-layered structure including the quantum dot cells changed in at least one of the plurality of quantum dot masks are in the direction of light emitted from the defective light emitting diode And the light-emitting diode is driven by the light-emitting diode. 16. The method of claim 15, wherein the quantum dot coating means comprises: Wherein the quantum dot layer is formed on the uppermost layer of the defective light emitting diode using a quantum dot mixed solution corresponding to a combination of the quantum dot cells determined as the repair quantum dot. 16. The method of claim 15, wherein the quantum dot coating means comprises: Layer quantum dot layer is formed on the uppermost layer of the defective light emitting diode with a quantum dot mixed solution corresponding to each of the quantum dot cells determined as the repair quantum dot.
KR1020090086310A 2009-09-14 2009-09-14 Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating KR101650390B1 (en)

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TW99115970A TW201110406A (en) 2009-09-14 2010-05-19 Method and apparatus for repairing light emitting diode using quantum dot coating
JP2012528732A JP2013504870A (en) 2009-09-14 2010-05-24 Light emitting diode repair method and apparatus using quantum dot coating
PCT/KR2010/003232 WO2011030993A1 (en) 2009-09-14 2010-05-24 Repair method and apparatus of light emitting diode using quantum dot coating
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