KR101650326B1 - 포토레지스트 조성물, 코팅된 기판, 및 전자 디바이스의 형성 방법 - Google Patents
포토레지스트 조성물, 코팅된 기판, 및 전자 디바이스의 형성 방법 Download PDFInfo
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- KR101650326B1 KR101650326B1 KR1020140090092A KR20140090092A KR101650326B1 KR 101650326 B1 KR101650326 B1 KR 101650326B1 KR 1020140090092 A KR1020140090092 A KR 1020140090092A KR 20140090092 A KR20140090092 A KR 20140090092A KR 101650326 B1 KR101650326 B1 KR 101650326B1
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- substituted
- unsubstituted
- hydrogen
- photoresist composition
- photoresist
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/943,007 US9063420B2 (en) | 2013-07-16 | 2013-07-16 | Photoresist composition, coated substrate, and method of forming electronic device |
US13/943,007 | 2013-07-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20150009484A KR20150009484A (ko) | 2015-01-26 |
KR101650326B1 true KR101650326B1 (ko) | 2016-08-23 |
Family
ID=52342720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020140090092A KR101650326B1 (ko) | 2013-07-16 | 2014-07-16 | 포토레지스트 조성물, 코팅된 기판, 및 전자 디바이스의 형성 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9063420B2 (zh) |
JP (1) | JP5913461B2 (zh) |
KR (1) | KR101650326B1 (zh) |
CN (1) | CN104330956B (zh) |
TW (1) | TWI510856B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US10466593B2 (en) * | 2015-07-29 | 2019-11-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus of patterning a semiconductor device |
US9921475B1 (en) * | 2016-08-31 | 2018-03-20 | Rohm And Haas Electronic Materials Llc | Photoacid-generating compound, polymer derived therefrom, photoresist composition including the photoacid-generating compound or polymer, and method of forming a photoresist relief image |
JP2018109701A (ja) * | 2017-01-04 | 2018-07-12 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 化学増幅型ポジ型フォトレジスト組成物およびそれを用いたパターン形成方法 |
US10082736B2 (en) | 2017-01-13 | 2018-09-25 | International Business Machines Corporation | Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning |
CN115079517A (zh) | 2017-11-30 | 2022-09-20 | 罗门哈斯电子材料有限责任公司 | 盐和包含其的光致抗蚀剂 |
CN109928904A (zh) | 2017-11-30 | 2019-06-25 | 罗门哈斯电子材料有限责任公司 | 两性离子化合物和包括其的光致抗蚀剂 |
CN109856911B (zh) | 2017-11-30 | 2023-10-27 | 罗门哈斯电子材料有限责任公司 | 盐和包含其的光致抗蚀剂 |
GB201903420D0 (en) * | 2019-03-13 | 2019-04-24 | Nanotronix Inc | Photoresist |
Citations (1)
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EP2506077B1 (en) * | 2011-03-31 | 2014-07-09 | Fujifilm Corporation | Lithographic printing plate precursor and method of preparing the same |
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2013
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JP2003066610A (ja) * | 2001-08-27 | 2003-03-05 | Toppan Printing Co Ltd | ポリイミド樹脂及びこれを含有する感光性樹脂組成物 |
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Journaql of Photopolymer Science and Technology Vol 12(1999), pp. 245-248 |
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JP2015038604A (ja) | 2015-02-26 |
JP5913461B2 (ja) | 2016-04-27 |
US20150021289A1 (en) | 2015-01-22 |
KR20150009484A (ko) | 2015-01-26 |
US9063420B2 (en) | 2015-06-23 |
TWI510856B (zh) | 2015-12-01 |
TW201516565A (zh) | 2015-05-01 |
CN104330956A (zh) | 2015-02-04 |
CN104330956B (zh) | 2018-04-10 |
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