KR101645043B1 - 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법 - Google Patents

플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법 Download PDF

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KR101645043B1
KR101645043B1 KR1020107011697A KR20107011697A KR101645043B1 KR 101645043 B1 KR101645043 B1 KR 101645043B1 KR 1020107011697 A KR1020107011697 A KR 1020107011697A KR 20107011697 A KR20107011697 A KR 20107011697A KR 101645043 B1 KR101645043 B1 KR 101645043B1
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plasma
silicon nitride
component
chamber
substrate
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KR20100099137A (ko
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트래비스 알 테일러
무쿤드 스리니바산
바비 캐드코데얀
케이 와이 라마누잼
빌자나 미키젤
상화 우
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램 리써치 코포레이션
세라딘인코포레이티드
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C—CHEMISTRY; METALLURGY
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H10P50/242—

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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
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  • Analytical Chemistry (AREA)
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KR1020107011697A 2007-10-31 2008-10-27 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법 Active KR101645043B1 (ko)

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US111307P 2007-10-31 2007-10-31
US61/001,113 2007-10-31

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KR101645043B1 true KR101645043B1 (ko) 2016-08-02

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US (1) US8622021B2 (enExample)
JP (1) JP5567486B2 (enExample)
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CN (1) CN101889329B (enExample)
TW (1) TWI433199B (enExample)
WO (1) WO2009058235A2 (enExample)

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US12444589B2 (en) 2022-03-25 2025-10-14 Samsung Electronics Co., Ltd. Operation method of etching apparatus and method of manufacturing semiconductor device using the same

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