KR101642335B1 - 반도체 기판의 제조방법 - Google Patents

반도체 기판의 제조방법 Download PDF

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Publication number
KR101642335B1
KR101642335B1 KR1020090047957A KR20090047957A KR101642335B1 KR 101642335 B1 KR101642335 B1 KR 101642335B1 KR 1020090047957 A KR1020090047957 A KR 1020090047957A KR 20090047957 A KR20090047957 A KR 20090047957A KR 101642335 B1 KR101642335 B1 KR 101642335B1
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KR
South Korea
Prior art keywords
semiconductor layer
flash lamp
single crystal
substrate
semiconductor substrate
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20090127065A (ko
Inventor
코이치로 타나카
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20090127065A publication Critical patent/KR20090127065A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020090047957A 2008-06-04 2009-06-01 반도체 기판의 제조방법 Expired - Fee Related KR101642335B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-146914 2008-06-04
JP2008146914 2008-06-04

Publications (2)

Publication Number Publication Date
KR20090127065A KR20090127065A (ko) 2009-12-09
KR101642335B1 true KR101642335B1 (ko) 2016-07-25

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ID=41400699

Family Applications (1)

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KR1020090047957A Expired - Fee Related KR101642335B1 (ko) 2008-06-04 2009-06-01 반도체 기판의 제조방법

Country Status (5)

Country Link
US (1) US7883988B2 (enExample)
JP (1) JP5554014B2 (enExample)
KR (1) KR101642335B1 (enExample)
CN (1) CN101599453B (enExample)
TW (1) TWI445060B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598050B2 (en) * 2008-06-26 2013-12-03 Ihi Corporation Laser annealing method and apparatus
JP5540476B2 (ja) * 2008-06-30 2014-07-02 株式会社Ｉｈｉ レーザアニール装置
US8907258B2 (en) * 2010-04-08 2014-12-09 Ncc Nano, Llc Apparatus for providing transient thermal profile processing on a moving substrate
WO2012014786A1 (en) * 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
EP2490073B1 (en) * 2011-02-18 2015-09-23 ASML Netherlands BV Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder
US10150230B2 (en) * 2011-04-08 2018-12-11 Ncc Nano, Llc Method for drying thin films in an energy efficient manner
US9442395B2 (en) 2012-02-03 2016-09-13 Asml Netherlands B.V. Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder
US20130344688A1 (en) * 2012-06-20 2013-12-26 Zhiyuan Ye Atomic Layer Deposition with Rapid Thermal Treatment
US9496257B2 (en) 2014-06-30 2016-11-15 International Business Machines Corporation Removal of semiconductor growth defects
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
WO2019186638A1 (ja) * 2018-03-26 2019-10-03 三菱電機株式会社 半導体装置の製造方法
WO2020179637A1 (ja) * 2019-03-01 2020-09-10 京セラ株式会社 セラミック構造体および該セラミック構造体を備えてなる支持機構

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331899A (ja) * 1999-05-21 2000-11-30 Shin Etsu Handotai Co Ltd Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
JP2005142344A (ja) * 2003-11-06 2005-06-02 Toshiba Corp 半導体装置の製造方法および半導体製造装置
JP2006216661A (ja) 2005-02-02 2006-08-17 Sumco Corp 半導体ウェーハの製造方法

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JPS5764936A (en) 1980-10-09 1982-04-20 Ushio Inc Annealing device
JPS6235512A (ja) 1985-08-09 1987-02-16 Agency Of Ind Science & Technol 半導体単結晶薄膜の製造方法
JPH05218367A (ja) 1992-02-03 1993-08-27 Sharp Corp 多結晶シリコン薄膜用基板および多結晶シリコン薄膜の作製方法
JPH10275905A (ja) * 1997-03-31 1998-10-13 Mitsubishi Electric Corp シリコンウェーハの製造方法およびシリコンウェーハ
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
US6534380B1 (en) 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JPH11163363A (ja) * 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4379943B2 (ja) 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP4529036B2 (ja) * 1999-09-24 2010-08-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体用薄膜ウェハの製造方法
JP3943782B2 (ja) * 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
TWI313059B (enExample) 2000-12-08 2009-08-01 Sony Corporatio
JP2003209054A (ja) * 2001-11-12 2003-07-25 Dainippon Screen Mfg Co Ltd 基板の熱処理方法および熱処理装置
JP4342429B2 (ja) * 2004-02-09 2009-10-14 株式会社東芝 半導体装置の製造方法
JP3910603B2 (ja) 2004-06-07 2007-04-25 株式会社東芝 熱処理装置、熱処理方法及び半導体装置の製造方法
JP4594121B2 (ja) 2005-02-03 2010-12-08 信越化学工業株式会社 Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
US7829436B2 (en) * 2005-12-22 2010-11-09 Sumco Corporation Process for regeneration of a layer transferred wafer and regenerated layer transferred wafer
KR100972213B1 (ko) * 2005-12-27 2010-07-26 신에쓰 가가꾸 고교 가부시끼가이샤 Ｓｏｉ 웨이퍼의 제조 방법 및 ｓｏｉ 웨이퍼
JP2008112848A (ja) * 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331899A (ja) * 1999-05-21 2000-11-30 Shin Etsu Handotai Co Ltd Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
JP2005142344A (ja) * 2003-11-06 2005-06-02 Toshiba Corp 半導体装置の製造方法および半導体製造装置
JP2006216661A (ja) 2005-02-02 2006-08-17 Sumco Corp 半導体ウェーハの製造方法

Also Published As

Publication number Publication date
JP2010016356A (ja) 2010-01-21
CN101599453B (zh) 2013-10-16
TWI445060B (zh) 2014-07-11
TW201017729A (en) 2010-05-01
KR20090127065A (ko) 2009-12-09
JP5554014B2 (ja) 2014-07-23
US20090305483A1 (en) 2009-12-10
US7883988B2 (en) 2011-02-08
CN101599453A (zh) 2009-12-09

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