KR101639519B1 - 전도성 메쉬패턴의 제조방법, 이로 제조된 메쉬 전극 및 적층체 - Google Patents

전도성 메쉬패턴의 제조방법, 이로 제조된 메쉬 전극 및 적층체 Download PDF

Info

Publication number
KR101639519B1
KR101639519B1 KR1020150022424A KR20150022424A KR101639519B1 KR 101639519 B1 KR101639519 B1 KR 101639519B1 KR 1020150022424 A KR1020150022424 A KR 1020150022424A KR 20150022424 A KR20150022424 A KR 20150022424A KR 101639519 B1 KR101639519 B1 KR 101639519B1
Authority
KR
South Korea
Prior art keywords
layer
pattern
photosensitive material
conductive layer
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150022424A
Other languages
English (en)
Korean (ko)
Other versions
KR20150095594A (ko
Inventor
박정호
신부건
김재진
이종병
정진미
정유진
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Publication of KR20150095594A publication Critical patent/KR20150095594A/ko
Application granted granted Critical
Publication of KR101639519B1 publication Critical patent/KR101639519B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80Etching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Insulated Conductors (AREA)
KR1020150022424A 2014-02-13 2015-02-13 전도성 메쉬패턴의 제조방법, 이로 제조된 메쉬 전극 및 적층체 Active KR101639519B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20140016625 2014-02-13
KR1020140016625 2014-02-13

Publications (2)

Publication Number Publication Date
KR20150095594A KR20150095594A (ko) 2015-08-21
KR101639519B1 true KR101639519B1 (ko) 2016-07-13

Family

ID=53800388

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020150022424A Active KR101639519B1 (ko) 2014-02-13 2015-02-13 전도성 메쉬패턴의 제조방법, 이로 제조된 메쉬 전극 및 적층체
KR1020150022431A Active KR101624834B1 (ko) 2014-02-13 2015-02-13 마스터 몰드의 제조방법, 이로 제조된 마스터 몰드, 투명포토마스크의 제조방법, 이로 제조된 투명포토마스크 및 상기 투명포토마스크를 이용한 전도성 메쉬패턴의 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020150022431A Active KR101624834B1 (ko) 2014-02-13 2015-02-13 마스터 몰드의 제조방법, 이로 제조된 마스터 몰드, 투명포토마스크의 제조방법, 이로 제조된 투명포토마스크 및 상기 투명포토마스크를 이용한 전도성 메쉬패턴의 제조방법

Country Status (6)

Country Link
US (2) US9841669B2 (enExample)
JP (1) JP2017517135A (enExample)
KR (2) KR101639519B1 (enExample)
CN (2) CN106462087B (enExample)
TW (2) TWI610150B (enExample)
WO (2) WO2015122721A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200056938A (ko) 2018-11-15 2020-05-25 주식회사 동진쎄미켐 투명전극 및 이를 채용한 터치패널

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102255445B1 (ko) * 2015-03-30 2021-05-21 동우 화인켐 주식회사 터치 센서
KR102230503B1 (ko) * 2015-04-14 2021-03-22 삼성전자주식회사 레이아웃 디자인 시스템, 이를 이용한 마스크 패턴 제조 시스템 및 방법
KR101785528B1 (ko) 2015-09-14 2017-10-17 루미마이크로 주식회사 네트패턴을 갖는 led 투명전광판 배선구조
KR101780688B1 (ko) 2015-09-14 2017-10-23 루미마이크로 주식회사 네트패턴을 갖는 메쉬형 전극배선 및 이를 포함하는 led 투명전광판
KR102543916B1 (ko) 2015-09-21 2023-06-16 삼성디스플레이 주식회사 플렉서블 전자 장치
KR102361796B1 (ko) * 2015-12-29 2022-02-11 미래나노텍(주) 몰드 제조 방법, 이를 이용한 전극필름 제조 방법 및 전극필름
KR102126679B1 (ko) 2016-08-18 2020-06-25 주식회사 엘지화학 그물구조 전도체의 제조방법
KR102129675B1 (ko) 2017-09-19 2020-07-02 주식회사 엘지화학 투명 발광소자 디스플레이용 전극 기판 및 이의 제조방법
CN111201582B (zh) * 2017-11-10 2023-07-28 阿尔卑斯阿尔派株式会社 输入装置
KR102028920B1 (ko) * 2017-11-28 2019-10-07 이현주 금속 발색 방법
CN108153108B (zh) * 2017-12-22 2021-11-26 青岛理工大学 一种大尺寸无拼接微纳模具制造方法
CN108732846B (zh) * 2018-05-18 2020-09-04 上海大学 采用网格电极热极化制备具有周期性显微二阶非线性极化率光学元件的制备方法
CN108845717B (zh) * 2018-06-27 2021-04-02 广州视源电子科技股份有限公司 感应膜的制作过程和触摸屏的制作方法
KR102124997B1 (ko) * 2018-10-05 2020-06-22 주식회사 아이에스시 도전성 입자의 제조방법 및 그 제조방법으로 제조된 도전성 입자
CN110058647B (zh) * 2019-03-26 2021-12-28 武汉华星光电半导体显示技术有限公司 承载衬底及柔性显示模组
WO2020237317A1 (en) * 2019-05-30 2020-12-03 Microtau Ip Pty Ltd Systems and methods for fabricating microstructures
CN114341652B (zh) * 2019-08-29 2025-02-07 株式会社Isc 测试座
EP4106618A4 (en) 2020-02-19 2024-04-24 Thermo Electron Scientific Instruments LLC PHASE MASK FOR STRUCTURED LIGHTING
TWI763016B (zh) * 2020-08-27 2022-05-01 大陸商天材創新材料科技(廈門)有限公司 疊構結構之製備方法、疊構結構及觸控感應器
US11487393B2 (en) 2020-09-29 2022-11-01 Cambrios Film Solutions Corporation Method for preparing stacking structure, stacking structure and touch sensor
KR102640834B1 (ko) * 2020-12-23 2024-02-28 한국재료연구원 금속 나노 메시 제조용 몰드, 및 이를 이용하여 제조된 금속 나노 메시 및 유기전자소자
CN112811386A (zh) * 2020-12-30 2021-05-18 哈尔滨工业大学(深圳) 3d微电极的制备方法
KR102665514B1 (ko) * 2021-08-06 2024-05-16 닛토덴코 가부시키가이샤 적층체
CN115469507A (zh) * 2022-09-13 2022-12-13 睿晶半导体(宁波)有限公司 光掩膜版及其制作方法
CN118029061A (zh) * 2024-01-16 2024-05-14 天津工业大学 一种光学透明静电纺丝微纳纤维膜的制备方法
CN118293799B (zh) * 2024-04-12 2024-09-20 苏州朗伯威智能科技有限公司 一种相移结构光三维成像方法和系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013158543A1 (en) * 2012-04-17 2013-10-24 The Regents Of The University Of Michigan Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766829A (en) * 1995-05-30 1998-06-16 Micron Technology, Inc. Method of phase shift lithography
US6753131B1 (en) * 1996-07-22 2004-06-22 President And Fellows Of Harvard College Transparent elastomeric, contact-mode photolithography mask, sensor, and wavefront engineering element
JPH11237744A (ja) * 1997-12-18 1999-08-31 Sanee Giken Kk 露光装置および露光方法
KR101091533B1 (ko) * 2008-01-29 2011-12-13 주식회사 엘지화학 시야각 제한 필름의 제조 방법
WO2009108765A2 (en) 2008-02-28 2009-09-03 3M Innovative Properties Company Touch screen sensor having varying sheet resistance
US7981592B2 (en) 2008-04-11 2011-07-19 Sandisk 3D Llc Double patterning method
JP5516200B2 (ja) * 2009-08-05 2014-06-11 信越化学工業株式会社 パターン形成方法、化学増幅ポジ型レジスト材料、及び、レジスト変性用組成物
JP2012079435A (ja) * 2010-09-30 2012-04-19 Casio Comput Co Ltd 膜パターンの形成方法及び発光装置の製造方法
KR101878882B1 (ko) * 2011-10-21 2018-07-17 엘지디스플레이 주식회사 나노 메쉬 투명 전극과 이의 제조방법, 나노 메쉬 투명 전극을 포함하는 터치 스크린 및 디스플레이 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013158543A1 (en) * 2012-04-17 2013-10-24 The Regents Of The University Of Michigan Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200056938A (ko) 2018-11-15 2020-05-25 주식회사 동진쎄미켐 투명전극 및 이를 채용한 터치패널

Also Published As

Publication number Publication date
KR101624834B1 (ko) 2016-06-07
KR20150095594A (ko) 2015-08-21
TWI584059B (zh) 2017-05-21
WO2015122721A1 (ko) 2015-08-20
US20160378241A1 (en) 2016-12-29
US9841669B2 (en) 2017-12-12
US20160342081A1 (en) 2016-11-24
US9880461B2 (en) 2018-01-30
CN106462087A (zh) 2017-02-22
TW201602740A (zh) 2016-01-16
JP2017517135A (ja) 2017-06-22
CN105980935B (zh) 2019-11-05
KR20150095595A (ko) 2015-08-21
CN105980935A (zh) 2016-09-28
TWI610150B (zh) 2018-01-01
WO2015122720A1 (ko) 2015-08-20
TW201543140A (zh) 2015-11-16
CN106462087B (zh) 2019-09-06

Similar Documents

Publication Publication Date Title
KR101639519B1 (ko) 전도성 메쉬패턴의 제조방법, 이로 제조된 메쉬 전극 및 적층체
US9720330B2 (en) Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography
JP2009010188A5 (enExample)
KR101190510B1 (ko) 패턴화된 투명 도전 필름의 제조 방법
CN104536614B (zh) 石墨烯传感器及其制作方法和触控显示装置
JP2010165460A (ja) 導電性ナノファイバーシート及びその製造方法
KR20140141469A (ko) 터치 스크린 전도성 필름 및 그 제조 방법
TW201409314A (zh) 觸控感應層及其製造方法
CN102630125A (zh) 导电元件及其制造方法、配线元件、信息输入装置
TWI478024B (zh) Touch panel and the touch panel making method
CN107121890A (zh) 一种纳米压印模板及其制备方法
JP2010198103A5 (enExample)
WO2014201754A1 (zh) 隔垫物的制作方法、基板、显示装置及电子产品
CN108415219B (zh) 功能膜层图形、显示基板及其制作方法、显示装置
JP2018522377A (ja) 回路基板の製造方法
KR101775982B1 (ko) 은 나노와이어를 이용한 나노 패턴 메탈 메쉬 구현 공정 방법 및 이를 이용한 하이브리드 메탈 메쉬
CN107436533A (zh) 一种掩膜板、其构图方法及显示面板
KR101211735B1 (ko) 액정표시장치용 고정세 인쇄판 및 그의 제조 방법
CN108550527B (zh) 一种图形化方法
JP2017157184A (ja) 静電容量センサーとその製造方法、静電容量センサー付き成形品
CN109427435B (zh) 导电网线图案结构及其制造方法
JP2015106264A (ja) 配線フィルム製造用フォトマスク及び配線フィルムの製造方法
KR20170094697A (ko) 시야각 제한 필름 제조 방법
KR20130074880A (ko) 투명 전극 및 투명 전극 형성 방법
KR101486712B1 (ko) 플렉서블 기판에 입체형 금속 구조체를 제조하는 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20150213

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20151218

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20160630

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20160707

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20160707

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20200618

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20230627

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20250623

Start annual number: 10

End annual number: 10