WO2015122721A1 - 마스터 몰드의 제조방법, 이로 제조된 마스터 몰드, 투명포토마스크의 제조방법, 이로 제조된 투명포토마스크 및 상기 투명포토마스크를 이용한 전도성 메쉬패턴의 제조방법 - Google Patents

마스터 몰드의 제조방법, 이로 제조된 마스터 몰드, 투명포토마스크의 제조방법, 이로 제조된 투명포토마스크 및 상기 투명포토마스크를 이용한 전도성 메쉬패턴의 제조방법 Download PDF

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Publication number
WO2015122721A1
WO2015122721A1 PCT/KR2015/001489 KR2015001489W WO2015122721A1 WO 2015122721 A1 WO2015122721 A1 WO 2015122721A1 KR 2015001489 W KR2015001489 W KR 2015001489W WO 2015122721 A1 WO2015122721 A1 WO 2015122721A1
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WO
WIPO (PCT)
Prior art keywords
photosensitive material
layer
pattern
transparent photomask
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/KR2015/001489
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English (en)
French (fr)
Korean (ko)
Inventor
박정호
정진미
정유진
신부건
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LG Chem Ltd
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LG Chem Ltd
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Priority to CN201580008070.4A priority Critical patent/CN106462087B/zh
Priority to US15/112,586 priority patent/US9880461B2/en
Publication of WO2015122721A1 publication Critical patent/WO2015122721A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Definitions

  • the present invention relates to a method of manufacturing a master mold, a master mold prepared therefrom, a method of manufacturing a transparent photomask, a method of manufacturing a transparent photomask and a conductive mesh pattern using the transparent photomask.
  • Portable terminals such as smart phones, Internet devices, and portable game machines are required to have a slimmer appearance in order to improve portability of users.
  • the touch screen Since the touch screen performs a desired function by touching a menu displayed on the screen while the user watches the screen, the touch screen should be formed of a transparent material and include a touch electrode for sensing the user's touch input.
  • the touch electrode is generally composed of two electrode lines having a cross structure in the touch screen, and the two touch electrode lines are formed on separate sheets or two touch electrode lines are provided on one sheet to determine a user's touch input. Can be.
  • the capacitive touch screen uses a capacitive type, and forms a sensor electrode pattern with a plurality of first conductive side lines and second conductive side lines that cross each other.
  • the capacitance changes at the point is collected at each of the first and second conductive side lines connected vertically and horizontally, and the collected signal is analyzed to sense the touch input. .
  • the electrode of the touch screen although the electrical resistance is larger than that of the conductive metal, a transparent metal oxide such as indium tin oxide (ITO) having high optical transmittance is used.
  • ITO indium tin oxide
  • the transparent metal oxide has a large work function, but the electrical conductivity is not relatively high, so there is no problem in a device having a narrow surface area, but a voltage drop occurs as the area is widened.
  • the transparent metal oxide is formed on a transparent film such as a PET film, it is difficult to increase the size because the surface damage of the film occurs and anion impact occurs in proportion to the deposition time.
  • U.S. Patent Application Publication No. 2010-0156840 discloses a touch screen sensor that senses a touch input using a mesh-type touch electrode.
  • the touch electrode of the mesh structure may be visually recognized or a moire phenomenon may occur due to the mesh pattern.
  • the present invention is to provide a method of manufacturing a master mold, a master mold manufactured therefrom, a method of manufacturing a transparent photomask, a method of manufacturing a transparent photomask and a conductive mesh pattern using the transparent photomask.
  • the present invention comprises the steps of: a) forming a first photosensitive material layer on the substrate; b) forming a first photosensitive material pattern layer by contacting a transparent photomask in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer; c) forming a second photosensitive material layer on the substrate provided with the first photosensitive material pattern layer; d) contacting the upper surface of the second photosensitive material layer in contact with the transparent photomask in which the linear pattern is imprinted, wherein the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask are in contact with each other to form a substrate on the substrate.
  • the present invention provides a master mold prepared according to the manufacturing method of the master mold, and having an embossed mesh pattern having a line width of 100 nm or more and 900 nm or less.
  • the present invention 1) forming a first photosensitive material layer on the substrate; 2) forming a first photosensitive material pattern layer by contacting a transparent photomask in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer; 3) forming a second photosensitive material layer on the substrate provided with the first photosensitive material pattern layer; 4) contacting the upper surface of the second photosensitive material layer in contact with the transparent photomask in which the linear pattern is imprinted, the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask are in contact with each other on the substrate Forming a photosensitive material pattern layer; 5) etching portions of the substrate on which the first photosensitive material pattern layer and the second photosensitive material pattern layer are not formed; 6) manufacturing a master mold having an embossed mesh pattern by removing the first photosensitive material pattern layer and the second photosensitive material pattern layer; 7) forming a transparent resin layer on the master mold; And 8) to provide a method for producing a transparent photomask comprising the step of
  • the present invention provides a transparent photomask that is manufactured according to the method for producing a transparent photomask, and has a negative mesh pattern having a line width of 100 nm or more and 900 nm or less.
  • the present invention comprises the steps of forming a photosensitive material layer on the conductive layer of the substrate having a conductive layer; B forming a photoresist mesh pattern layer by contacting the transparent photomask on an upper surface of the photoresist layer; C etching a portion of the conductive layer in which the photosensitive material mesh pattern layer is not formed; And d removing the photosensitive material mesh pattern layer to produce a conductive mesh pattern.
  • an electrode having an ultrafine mesh structure having a line width of submicrometer size can be manufactured through a simple photo process.
  • the electrode having a submicrometer-sized line-width ultra-mesh structure manufactured according to the present invention can overcome the limitation of the intrinsic sheet resistance value of the oxide film compared to the conventional thin metal oxide-based transparent electrode. It is very easy to apply the transparent electrode.
  • the mesh electrode manufactured by the manufacturing method of the present invention is very easy to use in the electrode structure of the touch panel of the electronic device.
  • the present invention can induce uniform contact of the photosensitive layer by using a soft retardation mask, so that it is easy to form a pattern in a cylindrical mold having a flat, non-planar or curved surface. There is an effect that can be easily applied to an automated process, such as a roll to roll process based.
  • a transparent flexible substrate may be used as a photo mask to form and overlap large-area patterns of various sizes, or to form patterns of different shapes on cylindrical surfaces by separately or independently forming cylindrical mold surfaces. There is.
  • the present invention can easily produce a master mold engraved with an embossed submicrometer mesh pattern.
  • the present invention can easily produce a transparent photomask engraved with an intaglio submicrometer mesh pattern.
  • 1 and 2 illustrate the principle of retardation lithography.
  • Figure 3 is intended to show the difficulty of manufacturing the submicron mesh pattern.
  • Figure 4 is a flow chart of the manufacturing method of the master mold according to the first embodiment of the present invention.
  • FIG. 5 is a flowchart of a manufacturing method of a master mold according to a second exemplary embodiment of the present invention.
  • FIG. 6 is a flowchart of a manufacturing method of a master mold according to a third exemplary embodiment of the present invention.
  • FIG. 7 is a flowchart illustrating a method of manufacturing a transparent photomask according to an exemplary embodiment of the present invention.
  • FIG. 8 is a flowchart illustrating a method of manufacturing a conductive mesh pattern using a transparent photomask manufactured according to an exemplary embodiment of the present invention.
  • FIG. 9 is a scanning electron microscope (SEM) image of a 40 ⁇ m line width line pattern (repeat cycle 80 ⁇ m) chrome blank mask of Example 1.
  • SEM scanning electron microscope
  • FIG. 10 is an SEM image of a transparent photomask engraved with a linear pattern prepared according to Example 1.
  • FIG. 10 is an SEM image of a transparent photomask engraved with a linear pattern prepared according to Example 1.
  • FIG. 11 is a schematic view and SEM image of the photosensitive material mesh pattern prepared according to Example 1.
  • Example 12 is a schematic view and an optical microscope image of a conductive mesh pattern prepared according to Example 1.
  • FIG. 13 is a schematic view and SEM image of the master mold prepared in Example 1.
  • FIG. 14 is a schematic view and SEM image of a transparent photomask engraved with an intaglio mesh pattern prepared according to Example 1.
  • FIG. 14 is a schematic view and SEM image of a transparent photomask engraved with an intaglio mesh pattern prepared according to Example 1.
  • FIG. 15 is a schematic diagram and SEM image of a conductive mesh pattern manufactured by using a transparent photomask engraved with a negative mesh pattern according to Example 1.
  • FIG. 15 is a schematic diagram and SEM image of a conductive mesh pattern manufactured by using a transparent photomask engraved with a negative mesh pattern according to Example 1.
  • FIG. 16 is a flowchart illustrating a method of manufacturing a conductive mesh pattern including a router pattern added to a transparent photomask and a router pattern manufactured according to another embodiment of the present invention.
  • substrate 30 conductive layer
  • substrate 200 conductive layer
  • first photosensitive material layer 330 first photosensitive material pattern layer
  • the mesh electrode having a line width of submicrometer level is an electrode structure that can maximize the transmittance by minimizing the line width in forming a conductive pattern using a highly conductive metal. Compared to the large-area and flexible electronic device is easy. In particular, when the flexible electronic device is applied, cracking of the conductive layer is inevitable due to a large difference in the mechanical modulus of elasticity between the flexible substrate and the conductive layer, even when the substrate is bent or bent due to the structure of the fine lines. Because of the dispersion, it can be used very easily in the application of the flexible flexible electronic device.
  • the soft lithography method is a new transfer method that uses a flexible organic material to make a pattern or a structure without using a complicated device used in conventional photography.
  • a phase difference photolithography mask is manufactured by controlling the distance between checkerboard-shaped uneven patterns to sub-micro size using electron beam lithography. The method has been proposed.
  • the phase difference of the incident UV light is generated by the difference in refractive index.
  • the phase difference considering the height d and the wavelength of the pattern becomes an integer multiple of 2 ⁇ , local destructive interference occurs, and the pattern as shown in FIG. In the local region of the protruding or recessed boundary of, a UV light intensity near zero is formed. Therefore, submicro patterns of 1 micron or less can be easily obtained even with a general low-cost UV lamp.
  • phase difference lithography does not use an expensive extreme ultraviolet light source.
  • the advantage is that submicro patterns can be easily obtained using low-cost UV lamps.
  • the retardation photolithography mask is used as a flexible material, the flexible substrate can have very high adhesion to the cylindrical mold due to the physical properties of the flexible substrate, thereby forming a uniform pattern in the entire area of the planar or non-planar (curved) substrate. There is this.
  • the ratio (b) of FIG. 3 is proportional to the interval g between the relief patterns of the phase difference photomask.
  • the gap d between the square patterns is widened as shown in FIG.
  • FIG. A mesh pattern such as) may be manufactured.
  • an expensive ultra-fine patterning device such as an electron beam or an ion beam must be used to control the gap g between the relief patterns of the phase difference photomask to a submicron size of less than 1 ⁇ m.
  • High difficulty and high vacuum-based pattern process is difficult to apply to large area.
  • the present invention comprises the steps of: a) forming a first photosensitive material layer on the substrate; b) forming a first photosensitive material pattern layer by contacting a transparent photomask in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer; c) forming a second photosensitive material layer on the substrate provided with the first photosensitive material pattern layer; d) contacting the upper surface of the second photosensitive material layer in contact with the transparent photomask in which the linear pattern is imprinted, wherein the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask are in contact with each other to form a substrate on the substrate.
  • Step a) is a step of forming a first photosensitive material layer on the substrate.
  • the type of the substrate is not particularly limited, but may be selected from among substrates generally used in the art.
  • the substrate may be a transparent substrate, for example, the transparent substrate may include or consist of at least one of quartz, glass, and plastic.
  • the substrate may comprise or consist of quartz.
  • the quartz has a good transmittance of the wavelength in the ultraviolet region and excellent in wear resistance and mechanical properties. In this case, it is possible to secure the transmittance of ultraviolet rays in inducing curing using ultraviolet curing resin at the time of replicating the shape of the master pattern later.
  • the thickness of the substrate is not particularly limited, but when the plastic substrate is manufactured on a roll to roll basis using a mold or a phase difference mask, the thickness of the substrate may be 40 ⁇ m or more and 400 ⁇ m or less.
  • the substrate of step a) may include a conductive layer provided on one surface.
  • the conductive layer is silver (Ag), copper (Cu), aluminum (Al), gold (Au), nickel (Ni), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr) and platinum (Pt) may include at least one metal or an alloy of two or more metals.
  • the conductive layer may include a transparent metal oxide.
  • the type of the transparent metal oxide is not particularly limited and may be selected to be generally used in the art.
  • the transparent metal oxide may be indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), aluminum zinc oxide-silver-aluminum zinc oxide (AZO- Ag-AZO), indium zinc oxide-silver-indium zinc oxide (IZO-Ag-IZO), indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO) and indium zinc tin oxide-silver-indium zinc tin oxide It may include at least one of (IZTO-Ag-IZTO).
  • the method of laminating the conductive layer is not particularly limited, but may be, for example, thermal deposition, sputtering, electron beam deposition, lamination processing, or solution coating.
  • the conductive layer may be formed on the substrate using at least one of a conductive metal precursor, a conductive metal oxide precursor, nanoparticles, nano wires, a conductive textile, and a conductive polymer. .
  • the thickness (height) of the conductive layer may be 5 nm or more and 10 ⁇ m or less.
  • the first photosensitive material layer formed on the conductive layer may be formed by applying a photosensitive material composition on the conductive layer.
  • a photosensitive material composition There is no particular limitation on the type of photosensitive material included in the photosensitive material composition, but the photosensitive material may have different solubility in a developing solution depending on whether the photosensitive material is exposed, and when the photosensitive material is cured by heat treatment after pattern formation, more stable process conditions may be established. .
  • the photosensitive material composition may be a positive photosensitive material composition or a negative photosensitive material composition, and is not particularly limited. It is preferable that the said photosensitive material composition is a positive photosensitive material composition.
  • the content of the solid content of the photosensitive material composition may vary depending on the viscosity and solid content of the photosensitive material used, but may be, for example, 10% by weight or more and 60% by weight or less based on the total weight of the photosensitive material composition.
  • the thickness of the first photosensitive material layer may be 0.01 ⁇ m or more and 10 ⁇ m or less.
  • the step b) is a step of forming a first photosensitive material pattern layer by contacting a transparent photomask in which a linear pattern is imprinted on the upper surface of the first photosensitive material layer.
  • the transparent photomask may be a transparent photomask engraved with an embossed linear pattern.
  • the transparent photomask may be a retardation soft mask, and specifically, the mask may be a contact mask of a soft material having a concave-convex shape having a period of micrometer size.
  • the transparent photomask in which the linear pattern is embossed may have a linear groove portion and a linear protrusion portion.
  • the line width of the protrusion and the line width of the groove may be the same or different, and the line width of the protrusion and the line width of the groove are preferably the same.
  • the line width of one protrusion and the line width of the groove may be defined as a period of irregularities.
  • the uneven period of the transparent photomask is 80 ⁇ m, it may mean a protrusion having a line width of 40 ⁇ m and a groove portion having a line width of 40 ⁇ m.
  • the uneven period of the transparent photomask determines the pitch of the photosensitive material pattern formed by the transparent photomask.
  • the pitch of the photosensitive material pattern formed by the transparent photomask may be 40 ⁇ m.
  • the pitch of the photosensitive material pattern means the distance between the longitudinal center line of the line width of any one pattern and the longitudinal center line of the line width of another pattern adjacent to any one of the patterns.
  • the material of the transparent photomask is not particularly limited as long as it is a flexible material having a high transmittance and a low Young's modulus.
  • the transparent photomask is a PDMS-based polymer, PMMA (polymethyl methacrylate), PUA (polyurethane acrylate), Polystyrene (PS), polycarbonate (PC), polyvinyl acohol (PVA), cyclic olefin copolymer (COP), polyethylene terephthalate (PET) and polyvinyl butadiene (PVB), or may include a copolymer thereof.
  • the transparent photomask preferably includes a PDMS-based polymer, but is not necessarily limited thereto.
  • the line width of the linear pattern engraved on the transparent photomask may be changed according to the pattern to be finally implemented.
  • the line width of the linear pattern engraved on the transparent photomask is embossed when considering the formation of the near-field optical pattern due to the wavelength of the ultraviolet light source used, the formation of the near-field optical pattern due to the extinction interference, and the sagging of the recessed portion of the pattern irregularities due to the flexible material of the transparent photomask. May be 2 ⁇ m or more and 500 ⁇ m or less.
  • the period of the irregularities formed in the transparent photomask can be designed and predicted through Equations 1 and 2 as grid intervals for determining the permeability and sheet resistance of the fabricated mesh electrode, which is the line width of the mesh electrode and the electrode metal used. The value is due to the properties of the material.
  • the uneven period of the transparent photomask may be more than 20 ⁇ m 160 ⁇ m.
  • T TOT Denotes the final transmittance of the substrate with the conductive mesh.
  • the height of the linear relief pattern of the transparent photomask may be 50 nm or more and 500 ⁇ m or less.
  • the surface on which the linear pattern of the transparent photomask is imprinted may contact the upper surface of the first photosensitive material layer.
  • the phase difference of the ultraviolet light incident on the transparent photomask is generated, and extinction interference at the boundary of the protrusions and grooves of the pattern which is the interface between the transparent photomask and the air As a result, a null point in which the intensity of ultraviolet rays is close to zero may be formed.
  • step b-1) contacting the transparent photomask to the upper surface of the first photosensitive material layer and irradiating UV light on the transparent photomask;
  • b-3) may include curing the formed first photosensitive material pattern layer.
  • the first photosensitive material layer is divided into a portion irradiated with ultraviolet rays and a portion not received by the transparent photomask, and preferably, the portion of the first photosensitive material layer irradiated with ultraviolet rays has solubility in a developer. Can be high.
  • the intensity of the irradiated ultraviolet light is not particularly limited, but may be, for example, 10 mJ / cm 2 or more and 200 mJ / cm 2 or less.
  • the developing solution used in the step b-2) is not particularly limited as long as it is a solution capable of melting a portion irradiated with ultraviolet rays of the first photosensitive material layer, but the developing solution may be an alkaline developer, for example, the developer is potassium hydroxide. (KOH).
  • the method may further include drying the first photosensitive material pattern layer formed after the step b-2).
  • a solvent or the like included in the first photosensitive material pattern layer may be vaporized.
  • the temperature at which the first photosensitive material pattern layer is dried is not particularly limited as long as the solvent or the like contained in the first photosensitive material pattern layer can be vaporized.
  • the cured first photosensitive material pattern layer may be hardened and fixed.
  • the temperature of curing the first photosensitive material pattern layer may be 150 ° C. or more and 250 ° C. or less.
  • the first photosensitive material pattern layer formed in step b) may be a cured first photosensitive material pattern layer.
  • the process of forming the second photosensitive material pattern layer on the conductive layer provided with the first photosensitive material pattern layer there is no damage to the pattern such as the hardened first photosensitive material pattern layer falling off or melting There may or may not be.
  • the line width of the linear pattern of the first photosensitive material pattern layer may be 100 nm or more and 900 nm or less.
  • Step c) is a step of forming a second photosensitive material layer on the substrate provided with the first photosensitive material pattern layer.
  • the thickness of the second photosensitive material layer may be the same as or close to the thickness (height) of the first photosensitive material pattern layer.
  • the thickness of the second photosensitive material layer is changed according to the thickness (height) of the first photosensitive material pattern layer, but may be, for example, 0.01 ⁇ m or more and 10 ⁇ m or less.
  • the second photosensitive material layer may be formed by applying the photosensitive material composition on the conductive layer provided with the first photosensitive material pattern layer.
  • the photosensitive material composition for forming the second photosensitive material layer may be the same as or different from the photosensitive material composition for forming the first photosensitive material layer.
  • a transparent photomask imprinted with a linear pattern is brought into contact with the upper surface of the second photoresist layer, and the substrate is contacted so that the linear pattern of the first photoresist pattern layer and the linear pattern of the transparent photomask intersect. It is a step of forming a second photosensitive material pattern layer on.
  • the transparent photomask is contacted so that the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask intersect, where the 'cross' is the same as the linear pattern of the first photosensitive material pattern layer.
  • the linear patterns of the retardation soft mask are contacted to be orthogonal or have a specific angle.
  • Step d) is a step of d-1) contacting the transparent photomask to the upper surface of the second photosensitive material layer and irradiating ultraviolet light on the transparent photomask;
  • d-3) may include curing the formed second photosensitive material pattern layer.
  • step d-2 may further comprise the step of drying the formed second photosensitive material pattern layer.
  • the d-1), d-2), d-3) and the drying step may be cited the description of the above-described b-1), b-2), b-3) and the drying step, each step is independent As described above, b-1), b-2), and b-3) may be performed under the same conditions as the drying step, or may be performed under different conditions.
  • the second photosensitive material pattern layer formed in step d) may be a cured second photosensitive material pattern layer.
  • the transparent photomask of step d) may refer to the description of the transparent photomask described above.
  • the transparent photomask of step d) may be the same as or different from the transparent photomask of step b).
  • the line width of the linear pattern of the second photosensitive material pattern layer may be 100 nm or more and 900 nm or less.
  • Another embodiment of the present invention can produce additional sub-micro patterns or micro patterns through three or more photosensitizer patterning on the substrate.
  • step d) After the step d), forming a third photosensitive material layer on the substrate on which the first photosensitive material pattern layer and the second photosensitive material pattern layer are formed; And forming a third photoresist pattern layer on the substrate.
  • the thickness of the third photosensitive material layer may be the same as or close to the thickness (height) of the first photosensitive material pattern layer and the second photosensitive material pattern layer.
  • the thickness of the third photosensitive material layer is changed depending on the thickness (height) of the first photosensitive material pattern layer and the second photosensitive material pattern layer, but may be, for example, 0.01 ⁇ m or more and 10 ⁇ m or less.
  • the third photosensitive material layer may be formed by applying a photosensitive material composition on a substrate having a first photosensitive material pattern layer and a second photosensitive material pattern layer.
  • the photosensitive material composition for forming the third photosensitive material layer may be the same as or different from the photosensitive material composition for forming at least one of the first photosensitive material layer and the second photosensitive material layer.
  • the forming of the third photoresist pattern layer may include contacting a transparent photomask having a linear pattern imprinted on an upper surface of the third photoresist layer, wherein The method may include forming a third photosensitive material pattern layer on the conductive layer by contacting at least one of the linear pattern and the linear pattern of the second photosensitive material pattern layer so that the linear pattern of the transparent photomask is crossed or parallel.
  • a mesh electrode having a pattern shape, such as triangular, rectangular or square, or polygonal arrangement.
  • a portion of the substrate on which the first photoresist pattern layer and the second photoresist pattern layer are not formed is etched to manufacture a conductive mesh pattern.
  • the etching process may be performed using a conventional dry etching method or a wet etching method.
  • the etching process is preferably performed according to a dry etching method. Can be.
  • the step e) includes a portion in which the first photosensitive material pattern layer, the second photosensitive material pattern layer and the additional photosensitive material pattern layer of the conductive layer are not formed. It may be a step of etching.
  • the step e) includes a portion where the first photosensitive material pattern layer, the second photosensitive material pattern layer, and the third photosensitive material pattern layer of the conductive layer are not formed. It may be a step of etching.
  • Step f) is a step of removing the first photosensitive material pattern layer and the second photosensitive material pattern layer.
  • the method of removing the first and second photosensitive material pattern layers is not particularly limited, and a method generally used in the art may be adopted.
  • the first photosensitive material pattern layer, the second photosensitive material pattern layer, and the additional photosensitive material pattern layer may be removed in step f).
  • the first photosensitive material pattern layer, the second photosensitive material pattern layer and the third photosensitive material pattern layer may be removed in step f).
  • step f After the step f), g) etching the portion of the substrate on which the conductive mesh pattern is not formed; And h) removing the conductive mesh pattern.
  • the etching process may be performed using a conventional dry etching method or a wet etching method.
  • the etching process may be performed according to a dry etching method.
  • Conditions of the etching process of step g) may be the same as or different from the conditions of the etching process of step e). In the above steps g) and e), considering the difference between the objects to be etched, the respective etching process conditions may be different.
  • the method of removing the conductive mesh pattern is not particularly limited, and a method generally used in the art may be adopted.
  • Conditions for removing the photosensitive material pattern layer of step f) may be the same as or different from the removal process of the conductive mesh pattern of step h). In the above steps f) and h), considering that the object to be removed is different, the conditions of each process may be different.
  • the manufacturing method of the master mold according to the first embodiment of the present invention comprises the steps of: a) forming a first photosensitive material layer 310 on the substrate 100; b) forming a first photosensitive material pattern layer 330 by contacting a transparent photomask 400 in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer 310; c) forming a second photoresist layer 510 on the substrate having the first photoresist pattern layer 330; d) contacting the upper surface of the second photosensitive material layer 510, the transparent photomask 400 is imprinted with a linear pattern, so that the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask intersect.
  • a method of manufacturing a master mold according to a second exemplary embodiment of the present invention may include a) a first photosensitive material layer on the conductive layer 200 of the substrate 100 having the conductive layer 200. Forming 310; b) forming a first photosensitive material pattern layer 330 by contacting a transparent photomask 400 in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer 310; c) forming a second photoresist layer 510 on the substrate provided with the first photoresist pattern layer; d) contacting the upper surface of the second photosensitive material layer 510, the transparent photomask 400 is imprinted with a linear pattern, so that the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask intersect.
  • a method of manufacturing a master mold according to a third exemplary embodiment of the present invention may include a) a first photosensitive material layer on the conductive layer 200 of the substrate 100 having the conductive layer 200. Forming 310; b) forming a first photosensitive material pattern layer 330 by contacting a transparent photomask 400 in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer 310; c) forming a second photoresist layer 510 on the substrate provided with the first photoresist pattern layer; d) contacting the upper surface of the second photosensitive material layer 510, the transparent photomask 400 is imprinted with a linear pattern, so that the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask intersect.
  • a conductive mesh pattern 600 by etching portions of the conductive layer in which the first photosensitive material pattern layer 330 and the second photosensitive material pattern layer 530 are not formed; f) removing the first photosensitive material pattern layer 330 and the second photosensitive material pattern layer 530; g) etching a portion where the conductive mesh pattern 530 of the substrate is not formed; And h) manufacturing the master mold by removing the conductive mesh pattern 530.
  • the present invention provides a master mold which is manufactured according to the method of manufacturing the master mold and has an embossed mesh pattern having a line width of 100 nm or more and 900 nm or less.
  • master mold For the description of the master mold may refer to the above description in the manufacturing method of the master mold.
  • the master mold may be a master mold having an integrated embossed mesh pattern or a master mold provided with an embossed conductive mesh pattern on a substrate.
  • the master mold is a master mold 1 having an integrated embossed mesh pattern, or a master mold provided with an embossed conductive mesh pattern 600 on a substrate 100 as shown in FIG. 5. It may be (1).
  • the master mold may further include an additional sub micro pattern or micro pattern formed through the additional photoresist pattern layer.
  • the mesh electrode may further include a router pattern layer.
  • the present invention 1) forming a first photosensitive material layer on the substrate; 2) forming a first photosensitive material pattern layer by contacting a transparent photomask in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer; 3) forming a second photosensitive material layer on the substrate provided with the first photosensitive material pattern layer; 4) contacting the upper surface of the second photosensitive material layer in contact with the transparent photomask in which the linear pattern is imprinted, the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask are in contact with each other on the substrate Forming a photosensitive material pattern layer; 5) etching portions of the substrate on which the first photosensitive material pattern layer and the second photosensitive material pattern layer are not formed; 6) manufacturing a master mold having an embossed mesh pattern by removing the first photosensitive material pattern layer and the second photosensitive material pattern layer; 7) forming a transparent resin layer on the master mold; And 8) to provide a method for producing a transparent photomask comprising the step of removing the
  • the substrate of step 1) includes a conductive layer provided on one surface thereof, and the step 5) includes etching a portion of the conductive layer in which the first photosensitive material pattern layer and the second photosensitive material pattern layer are not formed. It may be a step of manufacturing a pattern.
  • step 6 etching the portion of the substrate on which the conductive mesh pattern is not formed; And removing the conductive mesh pattern.
  • step 4 After the step 4), forming a third photosensitive material layer on the substrate on which the first photosensitive material pattern layer and the second photosensitive material pattern layer are formed; And forming a third photoresist pattern layer on the substrate.
  • Step 8) is a step of manufacturing a transparent photomask having a negative mesh pattern by removing the transparent resin layer from the master mold, after the step 8), the intaglio mesh pattern of the transparent photomask is penetrated through the engraved surface
  • the method may further include disposing a shadow mask or a screen mask engraved with a pattern and depositing an opaque material to form an opaque pattern layer.
  • the material of the opaque pattern layer is not particularly limited as long as it is opaque and a deposition process is possible, but may be, for example, a metal or a carbon-based material.
  • the pattern engraved on the shadow mask or the screen mask is not particularly limited.
  • the pattern engraved on the photomask may be a router pattern.
  • the router pattern is connected to a mesh pattern for a touch panel and is configured to be connected to an external flexible printed circuit board.
  • a shadow mask or a screen mask 800 having a penetrating pattern is disposed on a surface of the intaglio mesh pattern of the transparent photomask 10, and an opaque material is deposited.
  • the opaque pattern layer 70 can be formed.
  • the transparent resin layer is not particularly limited as long as it is transparent and can maintain the shape of the pattern when it is removed from the master mold.
  • the transparent resin layer may be a PDMS (polydimethylsiloxane) polymer, PMMA (polymethyl methacrylate), PUA (polyurethane acrylate), PS (polystyrene), PC (polycarbonate), PVA (polyvinyl acohol), COP (cyclic olefin copolymer), It may include at least one of polyethylene terephthalate (PET) and polyvinyl butadiene (PVB) or a copolymer thereof.
  • the transparent resin layer preferably includes a PDMS-based polymer, but is not necessarily limited thereto.
  • a method of manufacturing a transparent photomask according to a first exemplary embodiment of the present invention may include: 1) forming a first photosensitive material layer 310 on a substrate 100; 2) forming a first photosensitive material pattern layer 330 by contacting a transparent photomask 400 in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer 310; 3) forming a second photoresist layer 510 on the substrate provided with the first photoresist pattern layer 330; 4) the upper surface of the second photosensitive material layer 510 is brought into contact with the transparent photomask 400 imprinted with a linear pattern, so that the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask cross each other.
  • a method of manufacturing a transparent photomask according to a second exemplary embodiment of the present invention includes: 1) forming a transparent photomask on the conductive layer 200 of the substrate 100 having the conductive layer 200. Forming a photosensitive material layer 310; 2) forming a first photosensitive material pattern layer 330 by contacting a transparent photomask 400 in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer 310; 3) forming a second photosensitive material layer 510 on the substrate provided with the first photosensitive material pattern layer; 4) the upper surface of the second photosensitive material layer 510 is brought into contact with the transparent photomask 400 imprinted with a linear pattern, so that the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask cross each other.
  • a second photoresist pattern layer 530 Contacting to form a second photoresist pattern layer 530 on the substrate; 5) manufacturing a conductive mesh pattern 600 by etching portions of the conductive layer in which the first photosensitive material pattern layer 330 and the second photosensitive material pattern layer 530 are not formed; 6) manufacturing a master mold (1) having an embossed mesh pattern by removing the first photosensitive material pattern layer (330) and the second photosensitive material pattern layer (530); 7) forming a transparent resin layer (5) on the master mold (1); And 8) removing the transparent resin layer from the master mold 1 to produce a transparent photomask 10 having an intaglio mesh pattern.
  • a method of manufacturing a transparent photomask according to a third exemplary embodiment of the present invention includes: 1) forming a transparent photomask on the conductive layer 200 of the substrate 100 having the conductive layer 200. Forming a photosensitive material layer 310; 2) forming a first photosensitive material pattern layer 330 by contacting a transparent photomask 400 in which a linear pattern is imprinted on an upper surface of the first photosensitive material layer 310; 3) forming a second photosensitive material layer 510 on the substrate provided with the first photosensitive material pattern layer; 4) the upper surface of the second photosensitive material layer 510 is brought into contact with the transparent photomask 400 imprinted with a linear pattern, so that the linear pattern of the first photosensitive material pattern layer and the linear pattern of the transparent photomask cross each other.
  • the present invention provides a transparent photomask that is manufactured according to the method of manufacturing the transparent photomask and has a negative mesh pattern having a line width of 100 nm or more and 900 nm or less.
  • the depth of the intaglio mesh pattern may be 50 nm or more and 10 ⁇ m or less.
  • the pitch of the intaglio mesh pattern may be 2 ⁇ m or more and 500 ⁇ m or less.
  • the pitch of the intaglio mesh pattern may be 10 ⁇ m or more and 80 ⁇ m or less.
  • the transparent photomask may be a PDMS (polydimethylsiloxane) polymer, PMMA (polymethyl methacrylate), PUA (polyurethane acrylate), PS (polystyrene), PC (polycarbonate), PVA (polyvinyl acohol), COP (cyclic olefin copolymer), PET (polyethylene terephthalate) ) And polyvinyl butadiene (PVB) or a copolymer thereof.
  • PDMS polydimethylsiloxane
  • PMMA polymethyl methacrylate
  • PUA polyurethane acrylate
  • PS polystyrene
  • PC polycarbonate
  • PVA polyvinyl acohol
  • COP cyclic olefin copolymer
  • PET polyethylene terephthalate
  • PVB polyvinyl butadiene
  • the transparent photomask may further include an opaque pattern layer provided on the engraved surface of the intaglio mesh pattern.
  • the shape of the opaque pattern layer is not particularly limited.
  • the conductive layer is a mesh pattern for a touch panel
  • the pattern engraved in the photomask may be a router pattern.
  • the present invention comprises the steps of forming a photosensitive material layer on the conductive layer of the substrate having a conductive layer; B forming a photosensitive member mesh pattern layer by contacting the transparent photomask of the present invention on the upper surface of the photosensitive member layer; C etching a portion of the conductive layer in which the photosensitive material mesh pattern layer is not formed; And d removing the photosensitive material mesh pattern layer to produce a conductive mesh pattern.
  • the method of manufacturing a conductive mesh pattern includes a photosensitive material layer 40 on the conductive layer 30 of the substrate 20 having the conductive layer 30. Forming; B forming the photosensitive material mesh pattern layer 50 by contacting the transparent photomask 10 of the present invention on the upper surface of the photosensitive material layer 40; C etching a portion of the conductive layer in which the photosensitive material mesh pattern layer 50 is not formed; And forming the conductive mesh pattern 60 by removing the photosensitive material mesh pattern layer 50.
  • the conductive layer is silver (Ag), copper (Cu), aluminum (Al), gold (Au), nickel (Ni), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr) and platinum (Pt) may include at least one metal or an alloy of two or more metals.
  • the conductive layer may include a transparent metal oxide.
  • the type of the transparent metal oxide is not particularly limited and may be selected to be generally used in the art.
  • the transparent metal oxide may be indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), aluminum zinc oxide-silver-aluminum zinc oxide (AZO- Ag-AZO), indium zinc oxide-silver-indium zinc oxide (IZO-Ag-IZO), indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO) and indium zinc tin oxide-silver-indium zinc tin oxide It may include at least one of (IZTO-Ag-IZTO).
  • the step b may include contacting the transparent photomask with the upper surface of the photosensitive material layer and irradiating UV light on the transparent photomask once.
  • the photoresist layer is divided into a portion irradiated with ultraviolet rays and a portion not received by the transparent photomask, and preferably, the portion of the photoresist layer irradiated with ultraviolet rays has high solubility in a developer.
  • the intensity of the irradiated ultraviolet light is not particularly limited, but for example, the intensity of the ultraviolet light may be 10 mJ / cm 2 or more and 200 mJ / cm 2 or less.
  • the step b may further include removing the transparent photomask and developing the photoresist layer with a developer to form a photoresist mesh pattern layer.
  • the developing solution is not particularly limited as long as it is a solution capable of melting a portion irradiated with ultraviolet rays of the photosensitive material layer, but the developing solution may be an alkaline developing solution, for example, the developing solution may be potassium hydroxide (KOH).
  • KOH potassium hydroxide
  • the method may further include drying the photosensitive material mesh pattern layer formed after the developing step.
  • a solvent or the like included in the photosensitive material mesh pattern layer may be vaporized.
  • the temperature at which the photosensitive member mesh pattern layer is dried is not particularly limited as long as the solvent or the like contained in the photosensitive member mesh pattern layer can be vaporized.
  • Step b may further include curing the formed photosensitive material mesh pattern layer.
  • the cured photosensitive member mesh pattern layer may be hardened and fixed.
  • the temperature of curing the photosensitive material mesh pattern layer may be 150 ° C or more and 250 ° C or less.
  • the method of manufacturing a conductive mesh pattern of the present invention may be applied to a roll to roll process.
  • the transparent photomask When applied to a roll-to-roll process, the transparent photomask is provided on an outer circumferential surface of a hollow cylindrical substrate, a hollow cylindrical substrate, and has a negative mesh pattern having a line width of 100 nm or more and 900 nm or less, and It may include an ultraviolet lamp provided inside the cylindrical substrate.
  • the blanket having the intaglio mesh pattern is manufactured by the manufacturing method of the transparent photomask of the present invention, and is made of a flexible material that can be provided on the outer circumferential surface of the hollow cylindrical substrate.
  • the material of the blanket is not particularly limited as long as it can be provided on the outer circumferential surface of the cylindrical substrate, for example, PDMS (polydimethylsiloxane) polymer, PMMA (polymethyl methacrylate), PUA (polyurethane acrylate), PS (polystyrene), PC (polycarbonate) (PVA), polyvinyl acohol (PVA), cyclic olefin copolymer (COP), polyethylene terephthalate (PET) and polyvinyl butadiene (PVB) or may include a copolymer thereof.
  • the material of the blanket may be a polydimethylsiloxane (PDMS) -based polymer.
  • the material of the hollow cylindrical substrate is not particularly limited as long as the material has a mechanical property capable of transmitting ultraviolet rays and can withstand the impact that the transparent photomask may receive when rotating.
  • the material may be quartz or glass.
  • the substrate provided with the conductive mesh pattern may be a flexible film.
  • it may be a plastic film, and the material of the plastic film is not particularly limited and may be generally used in the art.
  • the line width of the manufactured conductive mesh pattern may be 100 nm or more and 900 nm or less.
  • messages means a net shape and may include a shape in which two or more lines intersect as well as an orthogonal lattice pattern.
  • the conductive mesh pattern may be a grid pattern in which two groups of lines are orthogonal to each other.
  • the pitch of the linear patterns of the first group in the lateral direction and the pitch of the linear patterns of the second group in the longitudinal direction may be the same or different from each other. Specifically, the pitch of the linear patterns of the first group and the pitch of the linear patterns of the second group may be the same.
  • Line widths of the linear patterns of the first group and line widths of the linear patterns of the second group may be 100 nm or more and 900 nm or less, respectively.
  • the pitch of the linear patterns of the first and second groups may be 2 ⁇ m or more and 500 ⁇ m or less, respectively. Specifically, the pitch of the linear patterns of the first and second groups may be 10 ⁇ m or more and 80 ⁇ m or less, respectively.
  • the mesh electrode may further include an additional sub micro pattern or micro pattern formed through the additional photoresist pattern layer.
  • the mesh electrode may further include a router pattern layer.
  • the mesh electrode may be used as at least one of a mesh electrode for a touch panel, an auxiliary electrode for an organic light emitting device, a metal electrode for an organic light emitting device, and a mesh electrode for an organic solar cell.
  • the mesh electrode may be a mesh electrode for a touch panel.
  • the photosensitive material mesh pattern layer is brought into contact with the transparent photomask provided with the opaque pattern layer on the upper surface of the photosensitive material layer. Additional photoresist pattern layers may be formed together.
  • the transparent photomask 10 when the transparent photomask 10 includes an opaque pattern layer 70 provided on a surface having an engraved mesh pattern engraved thereon, an opaque pattern is formed on an upper surface of the photosensitive material layer.
  • An additional photosensitive material pattern layer 80 may be formed together with the photosensitive material mesh pattern layer 50 by contacting the transparent photomask provided with the layer.
  • the pattern of the additional photosensitive material pattern layer is not particularly limited.
  • the conductive layer is a mesh pattern for a touch panel
  • the pattern engraved on the photomask may be a router pattern.
  • the step c may not be performed on the photosensitive material mesh pattern layer and the additional photosensitive material pattern layer of the conductive layer. It may be a step of etching the portion not.
  • the step d is performed by removing the additional photosensitive material pattern layer together with the photosensitive material mesh pattern layer. It may be a step of preparing.
  • AZ1512 stock solution
  • SU8 25 (300% dilution, PGMEA, propylene glycol monomethyl ether acetate) using a line pattern of about 40 ⁇ m line width (repetition cycle about 80 ⁇ m) using a chrome blank mask )
  • PGMEA propylene glycol monomethyl ether acetate
  • PDMS polydimethyl siloxane
  • curing agent in a ratio of 9: 1
  • a photosensitive material was coated and dried on the top to form a first photosensitive material layer.
  • the thickness of the first photosensitive material layer was adjusted to about 100 nm to 400 nm.
  • an exposure Karl Suss MA8 mask aligner, 1000W
  • a development developing solution CPD18
  • a dried first photoresist pattern layer were formed. At this time, the exposure amount was adjusted to the range of 10 mJ / cm 2 ⁇ 200mJ / cm 2.
  • the dried first photosensitive material pattern layer was cured by heat treatment at a temperature of 150 ° C. to 250 ° C. for about 10 minutes.
  • the same transparent photomask is rotated by 90 ° to be contacted, followed by exposure, It developed, dried, and hardened, and the 2nd photosensitive material pattern layer was formed on aluminum.
  • a photosensitive material mesh pattern having a line width of 100 nm to 900 nm and a pitch of 40 ⁇ m was prepared on aluminum.
  • the schematic diagram and SEM image of the formed photosensitive material mesh pattern are shown in FIG.
  • a conductive mesh pattern was manufactured by dry etching a 50 nm thick Al layer using the mesh photoresist pattern prepared on the aluminum as an etching mask.
  • a schematic diagram of the prepared conductive mesh pattern and an image of an optical microscope are shown in FIG. 12.
  • the process conditions of dry etching are as follows.
  • a quartz master mold having an embossed mesh pattern was manufactured by dry etching the quartz to 50 nm or more and 10 ⁇ m or less using a 50 nm thick aluminum mesh pattern prepared on the quartz as an etch mask.
  • FIG. 13 A schematic diagram of the prepared master mold and an SEM image are shown in FIG. 13.
  • the process conditions of dry etching are as follows.
  • the PDMS transparent photomask was engraved with a negative mesh pattern by mixing the polydimethyl siloxane (PDMS) prepolymer and a curing agent in a ratio of 9: 1 to the prepared quartz master mold, pouring it into a pattern, solidifying it by thermosetting, and detaching from the quartz master mold. Prepared.
  • the depth of the mesh pattern of the PDMS transparent photomask is 830nm, the pitch is 40 ⁇ m, the line width is 550nm.
  • FIG. 14 A schematic diagram of the prepared transparent photomask and an SEM image are shown in FIG. 14.
  • a photosensitive material was coated and dried on the top to form a photosensitive material layer.
  • the thickness of the photosensitive material layer was adjusted to about 100 nm to 400 nm.
  • an exposure Karl Suss MA8 mask aligner, 1000W
  • a developing developing solution CPD18
  • a dried photosensitive material mesh pattern layer were formed.
  • the exposure amount was adjusted to the range of 10 mJ / cm 2 ⁇ 200mJ / cm 2.
  • the dried photosensitive material mesh pattern layer was cured by heat treatment at a temperature of 150 ° C. to 250 ° C. for about 10 minutes.
  • a photosensitive material mesh pattern having a line width of 100 nm to 900 nm and a pitch of 40 ⁇ m was prepared on aluminum.
  • a conductive mesh pattern was manufactured by dry etching a 50 nm thick Al layer using the photosensitive material mesh pattern prepared on the aluminum as an etch mask.
  • the process conditions of dry etching are as follows.
  • FIG. 15 A schematic diagram of the prepared conductive mesh pattern and an SEM image are illustrated in FIG. 15.
  • the conductive mesh pattern has a height of 50 nm, a pitch of 40 ⁇ m, and a line width of 800 nm.

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PCT/KR2015/001489 2014-02-13 2015-02-13 마스터 몰드의 제조방법, 이로 제조된 마스터 몰드, 투명포토마스크의 제조방법, 이로 제조된 투명포토마스크 및 상기 투명포토마스크를 이용한 전도성 메쉬패턴의 제조방법 Ceased WO2015122721A1 (ko)

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KR101624834B1 (ko) 2016-06-07
US9841669B2 (en) 2017-12-12
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