TWI610150B - 製造導電網孔圖樣之方法、以該方法製造之網狀電極及層板 - Google Patents

製造導電網孔圖樣之方法、以該方法製造之網狀電極及層板 Download PDF

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TWI610150B
TWI610150B TW104105059A TW104105059A TWI610150B TW I610150 B TWI610150 B TW I610150B TW 104105059 A TW104105059 A TW 104105059A TW 104105059 A TW104105059 A TW 104105059A TW I610150 B TWI610150 B TW I610150B
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Taiwan
Prior art keywords
photosensitive material
layer
pattern
positive
conductive layer
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TW104105059A
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English (en)
Chinese (zh)
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TW201602740A (zh
Inventor
朴正岵
辛富建
金在鎮
李鐘炳
鄭鎮美
鄭有珍
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Ｌｇ化學股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Insulated Conductors (AREA)
TW104105059A 2014-02-13 2015-02-13 製造導電網孔圖樣之方法、以該方法製造之網狀電極及層板 TWI610150B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20140016625 2014-02-13
??10-2014-0016625 2014-02-13

Publications (2)

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TW201602740A TW201602740A (zh) 2016-01-16
TWI610150B true TWI610150B (zh) 2018-01-01

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TW104105059A TWI610150B (zh) 2014-02-13 2015-02-13 製造導電網孔圖樣之方法、以該方法製造之網狀電極及層板
TW104105054A TWI584059B (zh) 2014-02-13 2015-02-13 用於製造透明光罩之方法及藉由該方法所製造之透明光罩、以及使用透明光罩製造導電網格圖案之方法

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TW104105054A TWI584059B (zh) 2014-02-13 2015-02-13 用於製造透明光罩之方法及藉由該方法所製造之透明光罩、以及使用透明光罩製造導電網格圖案之方法

Country Status (6)

Country Link
US (2) US9841669B2 (enExample)
JP (1) JP2017517135A (enExample)
KR (2) KR101639519B1 (enExample)
CN (2) CN105980935B (enExample)
TW (2) TWI610150B (enExample)
WO (2) WO2015122720A1 (enExample)

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KR102255445B1 (ko) * 2015-03-30 2021-05-21 동우 화인켐 주식회사 터치 센서
KR102230503B1 (ko) * 2015-04-14 2021-03-22 삼성전자주식회사 레이아웃 디자인 시스템, 이를 이용한 마스크 패턴 제조 시스템 및 방법
KR101785528B1 (ko) 2015-09-14 2017-10-17 루미마이크로 주식회사 네트패턴을 갖는 led 투명전광판 배선구조
KR101780688B1 (ko) 2015-09-14 2017-10-23 루미마이크로 주식회사 네트패턴을 갖는 메쉬형 전극배선 및 이를 포함하는 led 투명전광판
KR102543916B1 (ko) 2015-09-21 2023-06-16 삼성디스플레이 주식회사 플렉서블 전자 장치
KR102361796B1 (ko) * 2015-12-29 2022-02-11 미래나노텍(주) 몰드 제조 방법, 이를 이용한 전극필름 제조 방법 및 전극필름
KR102126679B1 (ko) 2016-08-18 2020-06-25 주식회사 엘지화학 그물구조 전도체의 제조방법
CN110637345B (zh) 2017-09-19 2021-10-29 株式会社Lg化学 用于透明发光器件显示器的电极基底及其制造方法
DE212018000330U1 (de) * 2017-11-10 2020-05-15 Alps Alpine Co., Ltd. Eingabevorrichtung
KR102028920B1 (ko) * 2017-11-28 2019-10-07 이현주 금속 발색 방법
CN108153108B (zh) * 2017-12-22 2021-11-26 青岛理工大学 一种大尺寸无拼接微纳模具制造方法
CN108732846B (zh) * 2018-05-18 2020-09-04 上海大学 采用网格电极热极化制备具有周期性显微二阶非线性极化率光学元件的制备方法
CN108845717B (zh) * 2018-06-27 2021-04-02 广州视源电子科技股份有限公司 感应膜的制作过程和触摸屏的制作方法
KR102124997B1 (ko) * 2018-10-05 2020-06-22 주식회사 아이에스시 도전성 입자의 제조방법 및 그 제조방법으로 제조된 도전성 입자
KR20200056938A (ko) 2018-11-15 2020-05-25 주식회사 동진쎄미켐 투명전극 및 이를 채용한 터치패널
CN110058647B (zh) * 2019-03-26 2021-12-28 武汉华星光电半导体显示技术有限公司 承载衬底及柔性显示模组
WO2020237317A1 (en) * 2019-05-30 2020-12-03 Microtau Ip Pty Ltd Systems and methods for fabricating microstructures
CN114341652B (zh) * 2019-08-29 2025-02-07 株式会社Isc 测试座
CN115297765B (zh) 2020-02-19 2026-07-17 热电科学仪器有限公司 结构化照明的相位掩模
TWI763016B (zh) * 2020-08-27 2022-05-01 大陸商天材創新材料科技（廈門）有限公司 疊構結構之製備方法、疊構結構及觸控感應器
US11487393B2 (en) 2020-09-29 2022-11-01 Cambrios Film Solutions Corporation Method for preparing stacking structure, stacking structure and touch sensor
KR102640834B1 (ko) * 2020-12-23 2024-02-28 한국재료연구원 금속 나노 메시 제조용 몰드, 및 이를 이용하여 제조된 금속 나노 메시 및 유기전자소자
CN112811386A (zh) * 2020-12-30 2021-05-18 哈尔滨工业大学（深圳） 3d微电极的制备方法
CN116348284B (zh) * 2021-08-06 2024-05-24 日东电工株式会社 层叠体
CN115469507A (zh) * 2022-09-13 2022-12-13 睿晶半导体(宁波)有限公司 光掩膜版及其制作方法
CN118029061A (zh) * 2024-01-16 2024-05-14 天津工业大学 一种光学透明静电纺丝微纳纤维膜的制备方法
CN118293799B (zh) * 2024-04-12 2024-09-20 苏州朗伯威智能科技有限公司 一种相移结构光三维成像方法和系统

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JPH11237744A (ja) * 1997-12-18 1999-08-31 Sanee Giken Kk 露光装置および露光方法
TW201351062A (zh) * 2012-04-17 2013-12-16 美國密西根州立大學董事會 透過捲到捲光刻法製造用於透明電極與偏光片之微米級與納米級導體柵之方法

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US9880461B2 (en) 2018-01-30
CN106462087B (zh) 2019-09-06
KR20150095594A (ko) 2015-08-21
TW201543140A (zh) 2015-11-16
US20160342081A1 (en) 2016-11-24
WO2015122720A1 (ko) 2015-08-20
CN105980935B (zh) 2019-11-05
KR101624834B1 (ko) 2016-06-07
JP2017517135A (ja) 2017-06-22
WO2015122721A1 (ko) 2015-08-20
TW201602740A (zh) 2016-01-16
KR101639519B1 (ko) 2016-07-13
US20160378241A1 (en) 2016-12-29
KR20150095595A (ko) 2015-08-21
TWI584059B (zh) 2017-05-21
US9841669B2 (en) 2017-12-12
CN106462087A (zh) 2017-02-22
CN105980935A (zh) 2016-09-28

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