KR101634428B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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KR101634428B1
KR101634428B1 KR1020140031020A KR20140031020A KR101634428B1 KR 101634428 B1 KR101634428 B1 KR 101634428B1 KR 1020140031020 A KR1020140031020 A KR 1020140031020A KR 20140031020 A KR20140031020 A KR 20140031020A KR 101634428 B1 KR101634428 B1 KR 101634428B1
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substrate
volatile solvent
drying
heating
liquid
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KR20140114301A (ko
Inventor
고노스케 하야시
마사아키 후루야
다카시 오오타가키
유지 나가시마
아츠시 기나세
마사히로 아베
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시바우라 메카트로닉스 가부시끼가이샤
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning By Liquid Or Steam (AREA)
KR1020140031020A 2013-03-18 2014-03-17 기판 처리 장치 및 기판 처리 방법 Active KR101634428B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2013-054567 2013-03-18
JP2013054567 2013-03-18
JP2014029000A JP6302700B2 (ja) 2013-03-18 2014-02-18 基板処理装置及び基板処理方法
JPJP-P-2014-029000 2014-02-18

Publications (2)

Publication Number Publication Date
KR20140114301A KR20140114301A (ko) 2014-09-26
KR101634428B1 true KR101634428B1 (ko) 2016-06-28

Family

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KR1020140031020A Active KR101634428B1 (ko) 2013-03-18 2014-03-17 기판 처리 장치 및 기판 처리 방법

Country Status (6)

Country Link
US (1) US9607865B2 (enExample)
EP (1) EP2782128B1 (enExample)
JP (1) JP6302700B2 (enExample)
KR (1) KR101634428B1 (enExample)
CN (1) CN104064495B (enExample)
TW (1) TWI597769B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6849368B2 (ja) * 2016-09-30 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置

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US20120132230A1 (en) 2010-11-26 2012-05-31 Tokyo Electron Limited Substrate Processing Apparatus, Substrate Processing Method, and Storage Medium
US20120260517A1 (en) * 2011-04-18 2012-10-18 Lam Research Corporation Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations

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JPS6292325A (ja) 1985-10-17 1987-04-27 Nec Corp ウエハ−乾燥装置
JPH09148297A (ja) * 1995-11-24 1997-06-06 Hitachi Ltd 基板の乾燥方法およびこれを用いる乾燥装置およびこれを用いる半導体装置の製造方法
JP3330300B2 (ja) 1997-02-28 2002-09-30 東京エレクトロン株式会社 基板洗浄装置
KR100271764B1 (ko) 1997-12-24 2000-12-01 윤종용 반도체장치 제조용 현상 장치 및 그의 제어방법
JPH11340187A (ja) 1998-05-28 1999-12-10 Matsushita Electric Ind Co Ltd 洗浄乾燥装置および洗浄乾燥方法
JPH11354487A (ja) 1998-06-03 1999-12-24 Dainippon Screen Mfg Co Ltd 基板乾燥装置および基板乾燥方法
ATE476754T1 (de) * 1999-05-20 2010-08-15 Kaneka Corp Verfahren und vorrichtung zur herstellung eines halbleiterbauelements
DE10030431A1 (de) 2000-06-21 2002-01-10 Karl Suess Kg Praez Sgeraete F Verfahren und Vorrichtung zum Reinigen und/oder Bonden von Substraten
US6808566B2 (en) * 2001-09-19 2004-10-26 Tokyo Electron Limited Reduced-pressure drying unit and coating film forming method
JP4056858B2 (ja) * 2001-11-12 2008-03-05 東京エレクトロン株式会社 基板処理装置
US6843855B2 (en) * 2002-03-12 2005-01-18 Applied Materials, Inc. Methods for drying wafer
JP2004259734A (ja) 2003-02-24 2004-09-16 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
TW200633033A (en) 2004-08-23 2006-09-16 Koninkl Philips Electronics Nv Hot source cleaning system
US7642205B2 (en) 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
KR100696378B1 (ko) 2005-04-13 2007-03-19 삼성전자주식회사 반도체 기판을 세정하는 장치 및 방법
JP2008034779A (ja) 2006-06-27 2008-02-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
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JP5413016B2 (ja) * 2008-07-31 2014-02-12 東京エレクトロン株式会社 基板の洗浄方法、基板の洗浄装置及び記憶媒体
JP5234985B2 (ja) * 2009-03-31 2013-07-10 大日本スクリーン製造株式会社 基板処理装置及び基板処理方法
JP5140641B2 (ja) * 2009-06-29 2013-02-06 株式会社荏原製作所 基板処理方法及び基板処理装置
JP5254308B2 (ja) * 2010-12-27 2013-08-07 東京エレクトロン株式会社 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
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US20120132230A1 (en) 2010-11-26 2012-05-31 Tokyo Electron Limited Substrate Processing Apparatus, Substrate Processing Method, and Storage Medium
US20120260517A1 (en) * 2011-04-18 2012-10-18 Lam Research Corporation Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations

Also Published As

Publication number Publication date
EP2782128B1 (en) 2017-01-11
EP2782128A3 (en) 2014-10-22
TW201447997A (zh) 2014-12-16
US20140261549A1 (en) 2014-09-18
JP6302700B2 (ja) 2018-03-28
US9607865B2 (en) 2017-03-28
CN104064495A (zh) 2014-09-24
JP2014207438A (ja) 2014-10-30
CN104064495B (zh) 2017-09-08
EP2782128A2 (en) 2014-09-24
KR20140114301A (ko) 2014-09-26
TWI597769B (zh) 2017-09-01

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