JP6302700B2 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

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Publication number
JP6302700B2
JP6302700B2 JP2014029000A JP2014029000A JP6302700B2 JP 6302700 B2 JP6302700 B2 JP 6302700B2 JP 2014029000 A JP2014029000 A JP 2014029000A JP 2014029000 A JP2014029000 A JP 2014029000A JP 6302700 B2 JP6302700 B2 JP 6302700B2
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Prior art keywords
substrate
drying
volatile solvent
liquid
unit
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JP2014029000A
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English (en)
Japanese (ja)
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JP2014207438A5 (enExample
JP2014207438A (ja
Inventor
林　航之介
航之介 林
古矢　正明
正明 古矢
崇 大田垣
崇 大田垣
裕次 長嶋
裕次 長嶋
淳 木名瀬
淳 木名瀬
正泰 安部
正泰 安部
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2014029000A priority Critical patent/JP6302700B2/ja
Priority to US14/212,218 priority patent/US9607865B2/en
Priority to TW103109915A priority patent/TWI597769B/zh
Priority to KR1020140031020A priority patent/KR101634428B1/ko
Priority to EP14160175.7A priority patent/EP2782128B1/en
Priority to CN201410100514.4A priority patent/CN104064495B/zh
Publication of JP2014207438A publication Critical patent/JP2014207438A/ja
Publication of JP2014207438A5 publication Critical patent/JP2014207438A5/ja
Application granted granted Critical
Publication of JP6302700B2 publication Critical patent/JP6302700B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning By Liquid Or Steam (AREA)
JP2014029000A 2013-03-18 2014-02-18 基板処理装置及び基板処理方法 Active JP6302700B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014029000A JP6302700B2 (ja) 2013-03-18 2014-02-18 基板処理装置及び基板処理方法
US14/212,218 US9607865B2 (en) 2013-03-18 2014-03-14 Substrate processing device and substrate processing method
KR1020140031020A KR101634428B1 (ko) 2013-03-18 2014-03-17 기판 처리 장치 및 기판 처리 방법
EP14160175.7A EP2782128B1 (en) 2013-03-18 2014-03-17 Substrate processing device and substrate processing method
TW103109915A TWI597769B (zh) 2013-03-18 2014-03-17 基板處理裝置及基板處理方法
CN201410100514.4A CN104064495B (zh) 2013-03-18 2014-03-18 基板处理装置和基板处理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013054567 2013-03-18
JP2013054567 2013-03-18
JP2014029000A JP6302700B2 (ja) 2013-03-18 2014-02-18 基板処理装置及び基板処理方法

Publications (3)

Publication Number Publication Date
JP2014207438A JP2014207438A (ja) 2014-10-30
JP2014207438A5 JP2014207438A5 (enExample) 2017-11-30
JP6302700B2 true JP6302700B2 (ja) 2018-03-28

Family

ID=50731902

Family Applications (1)

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JP2014029000A Active JP6302700B2 (ja) 2013-03-18 2014-02-18 基板処理装置及び基板処理方法

Country Status (6)

Country Link
US (1) US9607865B2 (enExample)
EP (1) EP2782128B1 (enExample)
JP (1) JP6302700B2 (enExample)
KR (1) KR101634428B1 (enExample)
CN (1) CN104064495B (enExample)
TW (1) TWI597769B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6849368B2 (ja) * 2016-09-30 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置

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* Cited by examiner, † Cited by third party
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JPS6292325A (ja) 1985-10-17 1987-04-27 Nec Corp ウエハ−乾燥装置
JPH09148297A (ja) * 1995-11-24 1997-06-06 Hitachi Ltd 基板の乾燥方法およびこれを用いる乾燥装置およびこれを用いる半導体装置の製造方法
JP3171807B2 (ja) * 1997-01-24 2001-06-04 東京エレクトロン株式会社 洗浄装置及び洗浄方法
JP3330300B2 (ja) 1997-02-28 2002-09-30 東京エレクトロン株式会社 基板洗浄装置
KR100271764B1 (ko) 1997-12-24 2000-12-01 윤종용 반도체장치 제조용 현상 장치 및 그의 제어방법
JPH11340187A (ja) 1998-05-28 1999-12-10 Matsushita Electric Ind Co Ltd 洗浄乾燥装置および洗浄乾燥方法
JPH11354487A (ja) 1998-06-03 1999-12-24 Dainippon Screen Mfg Co Ltd 基板乾燥装置および基板乾燥方法
ATE476754T1 (de) * 1999-05-20 2010-08-15 Kaneka Corp Verfahren und vorrichtung zur herstellung eines halbleiterbauelements
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US6808566B2 (en) * 2001-09-19 2004-10-26 Tokyo Electron Limited Reduced-pressure drying unit and coating film forming method
JP4056858B2 (ja) * 2001-11-12 2008-03-05 東京エレクトロン株式会社 基板処理装置
US6843855B2 (en) * 2002-03-12 2005-01-18 Applied Materials, Inc. Methods for drying wafer
JP2004259734A (ja) 2003-02-24 2004-09-16 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
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US7642205B2 (en) 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
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JP5043406B2 (ja) * 2006-11-21 2012-10-10 大日本スクリーン製造株式会社 基板乾燥方法および基板乾燥装置
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Also Published As

Publication number Publication date
EP2782128B1 (en) 2017-01-11
EP2782128A3 (en) 2014-10-22
TW201447997A (zh) 2014-12-16
US20140261549A1 (en) 2014-09-18
US9607865B2 (en) 2017-03-28
KR101634428B1 (ko) 2016-06-28
CN104064495A (zh) 2014-09-24
JP2014207438A (ja) 2014-10-30
CN104064495B (zh) 2017-09-08
EP2782128A2 (en) 2014-09-24
KR20140114301A (ko) 2014-09-26
TWI597769B (zh) 2017-09-01

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