KR101604102B1 - 유기 반도체용의, 유도체화 풀러렌을 주성분으로 하는 도펀트 - Google Patents
유기 반도체용의, 유도체화 풀러렌을 주성분으로 하는 도펀트 Download PDFInfo
- Publication number
- KR101604102B1 KR101604102B1 KR1020117007363A KR20117007363A KR101604102B1 KR 101604102 B1 KR101604102 B1 KR 101604102B1 KR 1020117007363 A KR1020117007363 A KR 1020117007363A KR 20117007363 A KR20117007363 A KR 20117007363A KR 101604102 B1 KR101604102 B1 KR 101604102B1
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- Prior art keywords
- fullerene
- fullerene derivative
- lumo
- energy level
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- Expired - Fee Related
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- 0 C**[C@@](C)**C(F)(F)F Chemical compound C**[C@@](C)**C(F)(F)F 0.000 description 1
- IXHWGNYCZPISET-UHFFFAOYSA-N N#CC(C#N)=C(C(F)=C(C1=C(C#N)C#N)F)C(F)=C1F Chemical compound N#CC(C#N)=C(C(F)=C(C1=C(C#N)C#N)F)C(F)=C1F IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- IYZMXHQDXZKNCY-UHFFFAOYSA-N c(cc1)ccc1N(c1ccccc1)c(cc1)ccc1N(c(cc1)ccc1N(c1ccccc1)c1ccccc1)c(cc1)ccc1N(c1ccccc1)c1ccccc1 Chemical compound c(cc1)ccc1N(c1ccccc1)c(cc1)ccc1N(c(cc1)ccc1N(c1ccccc1)c1ccccc1)c(cc1)ccc1N(c1ccccc1)c1ccccc1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/141—Side-chains having aliphatic units
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/90—Applications
- C08G2261/92—TFT applications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Light Receiving Elements (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13648608P | 2008-09-09 | 2008-09-09 | |
| US61/136,486 | 2008-09-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110065485A KR20110065485A (ko) | 2011-06-15 |
| KR101604102B1 true KR101604102B1 (ko) | 2016-03-25 |
Family
ID=41650357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117007363A Expired - Fee Related KR101604102B1 (ko) | 2008-09-09 | 2009-09-09 | 유기 반도체용의, 유도체화 풀러렌을 주성분으로 하는 도펀트 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8431434B2 (enExample) |
| EP (1) | EP2335299B1 (enExample) |
| JP (2) | JP5624987B2 (enExample) |
| KR (1) | KR101604102B1 (enExample) |
| CN (1) | CN102217110B (enExample) |
| WO (1) | WO2010029542A1 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8431434B2 (en) | 2008-09-09 | 2013-04-30 | Technion Research & Development Foundation Limited | Derivatized fullerene-based dopants for organic semiconductors |
| KR101335155B1 (ko) | 2009-06-01 | 2013-12-02 | 히타치가세이가부시끼가이샤 | 유기 전자 재료 및 그것을 포함하는 잉크 조성물, 및 그것들을 이용하여 형성된 유기 박막, 유기 전자 소자, 유기 전계발광 소자, 조명 장치 및 표시 장치 |
| US20120091449A1 (en) * | 2009-06-23 | 2012-04-19 | Sumitomo Chemical Company, Limited | Organic electroluminescent element |
| JP2013518439A (ja) | 2010-01-25 | 2013-05-20 | ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ | フラーレンドープナノ構造体及びその作製方法 |
| EP2529403A1 (en) | 2010-01-25 | 2012-12-05 | The Board of Trustees of The Leland Stanford Junior University | Joined nanostructures and methods therefor |
| KR101036213B1 (ko) * | 2010-01-26 | 2011-05-20 | 광주과학기술원 | 발광소자와 태양전지 성능을 포함하는 전자소자 |
| KR20200127032A (ko) * | 2010-04-08 | 2020-11-09 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자 |
| GB201009718D0 (en) * | 2010-06-10 | 2010-07-21 | Univ Manchester | Functionalised graphene |
| DE102010046040B4 (de) * | 2010-09-22 | 2021-11-11 | Novaled Gmbh | Verfahren zur Herstellung von Fulleren-Derivaten |
| US9293553B2 (en) | 2011-03-10 | 2016-03-22 | The Trustees Of Columbia University In The City Of New York | Graphene electrodes for electronic devices |
| GB201105582D0 (en) | 2011-04-01 | 2011-05-18 | Cambridge Display Tech Ltd | Organic light-emitting device and method |
| US9263524B2 (en) * | 2011-04-05 | 2016-02-16 | The Board Of Trustees Of The Leland Stanford Junior University | Semiconductor materials, apparatuses and methods |
| WO2013018251A1 (ja) * | 2011-08-03 | 2013-02-07 | パナソニック株式会社 | 有機発光素子 |
| EP2571072A1 (en) * | 2011-09-13 | 2013-03-20 | LANXESS Deutschland GmbH | Semiconducting thin [60]fullerene films and their use |
| GB201118997D0 (en) * | 2011-11-03 | 2011-12-14 | Cambridge Display Tech Ltd | Electronic device and method |
| CN103427045A (zh) * | 2012-05-14 | 2013-12-04 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
| US9881712B2 (en) | 2012-07-20 | 2018-01-30 | Rohm And Haas Electronic Materials Llc | Highly crystalline electrically conducting polymers, methods of manufacture thereof and articles comprising the same |
| CN103730581B (zh) * | 2012-10-15 | 2016-05-18 | 乐金显示有限公司 | 有机发光装置和使用其的有机发光显示装置 |
| CN102903525B (zh) * | 2012-10-19 | 2015-11-25 | 中国科学院化学研究所 | 一种用于全固态电储能器件的正电荷储能材料 |
| GB201309668D0 (en) | 2013-05-30 | 2013-07-17 | Isis Innovation | Organic semiconductor doping process |
| US10600964B2 (en) | 2013-12-17 | 2020-03-24 | Rohm And Haas Electronic Materials Llc | Highly crystalline electrically conducting organic materials, methods of manufacture thereof and articles comprising the same |
| TWI570982B (zh) * | 2013-12-31 | 2017-02-11 | 昆山工研院新型平板顯示技術中心有限公司 | An organic light emitting display device and a top emission organic light emitting diode device with improved viewing angle characteristics |
| CN103746075B (zh) * | 2014-01-11 | 2017-03-08 | 马良 | 一种改善有机薄膜晶体管稳定性的方法 |
| GB2527606A (en) * | 2014-06-27 | 2015-12-30 | Cambridge Display Tech Ltd | Charge-transfer salt |
| WO2016190217A1 (ja) * | 2015-05-28 | 2016-12-01 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換素子および固体撮像装置ならびに電子機器 |
| GB2546523A (en) | 2016-01-21 | 2017-07-26 | Cambridge Display Tech Ltd | Organic photodetector with reduced dark current |
| EP3208862B1 (en) | 2016-02-22 | 2024-10-09 | Novaled GmbH | Charge transporting semi-conducting material and electronic device comprising it |
| EP3208863B1 (en) | 2016-02-22 | 2019-10-23 | Novaled GmbH | Charge transporting semi-conducting material and electronic device comprising it |
| EP3410510B1 (en) | 2017-06-02 | 2021-10-20 | Novaled GmbH | Organic electronic device and method for producing the organic electronic device |
| EP3444662A1 (en) * | 2017-08-17 | 2019-02-20 | Université de Strasbourg | Liquid crystal spatial light modulator |
| CN108690602B (zh) * | 2018-05-22 | 2020-12-18 | 四川大学 | 一种增强富勒烯荧光性能的方法 |
| CN109205591B (zh) * | 2018-07-05 | 2022-04-26 | 南京理工大学 | 一种新型富勒烯衍生物微球的制备方法 |
| DE102018125307A1 (de) * | 2018-10-12 | 2020-04-16 | Novaled Gmbh | Organische lichtemittierende Vorrichtung |
| US11527582B1 (en) | 2019-09-24 | 2022-12-13 | Apple Inc. | Display stack with integrated photodetectors |
| US11839133B2 (en) * | 2021-03-12 | 2023-12-05 | Apple Inc. | Organic photodetectors for in-cell optical sensing |
| US12124002B2 (en) | 2021-09-03 | 2024-10-22 | Apple Inc. | Beam deflector metasurface |
| CN113777901A (zh) * | 2021-09-08 | 2021-12-10 | 上海交通大学 | 一种掺杂有机小分子供体材料的液晶薄膜器件及显示装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006190815A (ja) | 2005-01-06 | 2006-07-20 | Nec Corp | ドーパント材料、ドーパント材料の製造方法およびこれを用いた半導体素子 |
| WO2008062642A1 (en) * | 2006-11-22 | 2008-05-29 | Nec Corporation | Semiconductor device and method for fabricating the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60033038T2 (de) * | 2000-11-24 | 2007-08-23 | Sony Deutschland Gmbh | Hybridsolarzelle mit thermisch abgeschiedener Halbleiteroxidschicht |
| US6580027B2 (en) | 2001-06-11 | 2003-06-17 | Trustees Of Princeton University | Solar cells using fullerenes |
| US20070181874A1 (en) * | 2004-12-30 | 2007-08-09 | Shiva Prakash | Charge transport layers and organic electron devices comprising same |
| US8017863B2 (en) * | 2005-11-02 | 2011-09-13 | The Regents Of The University Of Michigan | Polymer wrapped carbon nanotube near-infrared photoactive devices |
| WO2007121252A2 (en) | 2006-04-11 | 2007-10-25 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
| KR100846597B1 (ko) | 2007-01-24 | 2008-07-16 | 삼성에스디아이 주식회사 | 함불소 화합물 및 탄소계 화합물을 포함하는 유기 발광소자 |
| AU2008320815B2 (en) * | 2007-10-31 | 2014-07-03 | Basf Se | Use of halogenated phthalocyanines |
| US8431434B2 (en) | 2008-09-09 | 2013-04-30 | Technion Research & Development Foundation Limited | Derivatized fullerene-based dopants for organic semiconductors |
-
2009
- 2009-09-09 US US13/062,964 patent/US8431434B2/en not_active Expired - Fee Related
- 2009-09-09 WO PCT/IL2009/000879 patent/WO2010029542A1/en not_active Ceased
- 2009-09-09 CN CN200980144847.4A patent/CN102217110B/zh not_active Expired - Fee Related
- 2009-09-09 KR KR1020117007363A patent/KR101604102B1/ko not_active Expired - Fee Related
- 2009-09-09 JP JP2011526631A patent/JP5624987B2/ja not_active Expired - Fee Related
- 2009-09-09 EP EP09787560.3A patent/EP2335299B1/en not_active Not-in-force
-
2014
- 2014-09-29 JP JP2014197706A patent/JP2015053489A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006190815A (ja) | 2005-01-06 | 2006-07-20 | Nec Corp | ドーパント材料、ドーパント材料の製造方法およびこれを用いた半導体素子 |
| WO2008062642A1 (en) * | 2006-11-22 | 2008-05-29 | Nec Corporation | Semiconductor device and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110156019A1 (en) | 2011-06-30 |
| JP2015053489A (ja) | 2015-03-19 |
| EP2335299A1 (en) | 2011-06-22 |
| US8431434B2 (en) | 2013-04-30 |
| KR20110065485A (ko) | 2011-06-15 |
| CN102217110A (zh) | 2011-10-12 |
| WO2010029542A1 (en) | 2010-03-18 |
| JP5624987B2 (ja) | 2014-11-12 |
| JP2012502495A (ja) | 2012-01-26 |
| WO2010029542A8 (en) | 2011-03-31 |
| EP2335299B1 (en) | 2018-01-10 |
| CN102217110B (zh) | 2014-06-04 |
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