CN102217110B - 用于有机半导体的基于衍生化富勒烯的掺杂剂 - Google Patents

用于有机半导体的基于衍生化富勒烯的掺杂剂 Download PDF

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CN102217110B
CN102217110B CN200980144847.4A CN200980144847A CN102217110B CN 102217110 B CN102217110 B CN 102217110B CN 200980144847 A CN200980144847 A CN 200980144847A CN 102217110 B CN102217110 B CN 102217110B
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poly
fullerene
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fullerene derivate
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CN102217110A (zh
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N·特斯勒
O·索洛梅施赫
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Technion Research and Development Foundation Ltd
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    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN200980144847.4A 2008-09-09 2009-09-09 用于有机半导体的基于衍生化富勒烯的掺杂剂 Expired - Fee Related CN102217110B (zh)

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US13648608P 2008-09-09 2008-09-09
US61/136486 2008-09-09
US61/136,486 2008-09-09
PCT/IL2009/000879 WO2010029542A1 (en) 2008-09-09 2009-09-09 Derivatized fullerene-based dopants for organic semiconductors

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US8431434B2 (en) 2013-04-30
KR20110065485A (ko) 2011-06-15
CN102217110A (zh) 2011-10-12
KR101604102B1 (ko) 2016-03-25
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JP5624987B2 (ja) 2014-11-12
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