KR101603566B1 - 반도체 디바이스 구동회로 및 반도체 디바이스 구동장치 - Google Patents

반도체 디바이스 구동회로 및 반도체 디바이스 구동장치 Download PDF

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KR101603566B1
KR101603566B1 KR1020140031932A KR20140031932A KR101603566B1 KR 101603566 B1 KR101603566 B1 KR 101603566B1 KR 1020140031932 A KR1020140031932 A KR 1020140031932A KR 20140031932 A KR20140031932 A KR 20140031932A KR 101603566 B1 KR101603566 B1 KR 101603566B1
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South Korea
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switching element
potential
capacitor
low
circuit
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KR1020140031932A
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Korean (ko)
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KR20140116807A (ko
Inventor
히토시 마키시마
아키히사 야마모토
동 왕
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
KR1020140031932A 2013-03-25 2014-03-19 반도체 디바이스 구동회로 및 반도체 디바이스 구동장치 Active KR101603566B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-061425 2013-03-25
JP2013061425A JP5991939B2 (ja) 2013-03-25 2013-03-25 半導体デバイス駆動回路および半導体デバイス駆動装置

Publications (2)

Publication Number Publication Date
KR20140116807A KR20140116807A (ko) 2014-10-06
KR101603566B1 true KR101603566B1 (ko) 2016-03-15

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KR1020140031932A Active KR101603566B1 (ko) 2013-03-25 2014-03-19 반도체 디바이스 구동회로 및 반도체 디바이스 구동장치

Country Status (3)

Country Link
JP (1) JP5991939B2 (enrdf_load_stackoverflow)
KR (1) KR101603566B1 (enrdf_load_stackoverflow)
DE (1) DE102014202643B4 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016132748A1 (ja) * 2015-02-17 2016-08-25 株式会社村田製作所 Ｄｃ－ｄｃコンバータ
JP6500999B2 (ja) * 2016-02-16 2019-04-17 富士電機株式会社 半導体装置
CN110024290B (zh) * 2016-12-01 2021-04-13 宜普电源转换公司 用于基于GaN晶体管的功率转换器的自举电容器过电压管理电路
JP7032154B2 (ja) * 2018-01-31 2022-03-08 ローム株式会社 スイッチング回路、半導体装置、ｄｃ／ｄｃコンバータ
JP7312561B2 (ja) * 2018-02-25 2023-07-21 新電元工業株式会社 パワーモジュール、スイッチング電源及びパワーコントロールユニット
US11444337B2 (en) 2019-03-12 2022-09-13 Samsung Sdi Co., Ltd Solid state switch driver circuit for a battery system
CN113746305B (zh) * 2021-08-30 2023-04-25 深圳数马电子技术有限公司 栅极驱动电路和多相智能功率模块

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066963A (ja) 2009-09-15 2011-03-31 Denso Corp 電力変換器
JP2012138977A (ja) 2010-12-24 2012-07-19 Sanken Electric Co Ltd ドライブ回路及びスイッチング電源装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2571963Y2 (ja) * 1991-11-21 1998-05-20 株式会社東芝 インバータ装置
JP4848714B2 (ja) * 2005-09-21 2011-12-28 富士電機株式会社 半導体電力変換装置
JP2013062717A (ja) * 2011-09-14 2013-04-04 Mitsubishi Electric Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066963A (ja) 2009-09-15 2011-03-31 Denso Corp 電力変換器
JP2012138977A (ja) 2010-12-24 2012-07-19 Sanken Electric Co Ltd ドライブ回路及びスイッチング電源装置

Also Published As

Publication number Publication date
JP2014187825A (ja) 2014-10-02
DE102014202643B4 (de) 2021-07-01
KR20140116807A (ko) 2014-10-06
JP5991939B2 (ja) 2016-09-14
DE102014202643A1 (de) 2014-09-25

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