KR101597186B1 - 마스크 블랭크용 기판, 마스크 블랭크, 전사용 마스크 및 이들의 제조방법, 그리고 반도체 디바이스의 제조방법 - Google Patents

마스크 블랭크용 기판, 마스크 블랭크, 전사용 마스크 및 이들의 제조방법, 그리고 반도체 디바이스의 제조방법 Download PDF

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KR101597186B1
KR101597186B1 KR1020157024697A KR20157024697A KR101597186B1 KR 101597186 B1 KR101597186 B1 KR 101597186B1 KR 1020157024697 A KR1020157024697 A KR 1020157024697A KR 20157024697 A KR20157024697 A KR 20157024697A KR 101597186 B1 KR101597186 B1 KR 101597186B1
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South Korea
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substrate
transfer
mask blank
mask
thin film
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Korean (ko)
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KR20150119121A (ko
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마사루 다나베
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Glass (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Engineering (AREA)
KR1020157024697A 2013-06-21 2014-06-19 마스크 블랭크용 기판, 마스크 블랭크, 전사용 마스크 및 이들의 제조방법, 그리고 반도체 디바이스의 제조방법 Active KR101597186B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013130443 2013-06-21
JPJP-P-2013-130443 2013-06-21
PCT/JP2014/066263 WO2014203961A1 (ja) 2013-06-21 2014-06-19 マスクブランク用基板、マスクブランク、転写用マスク及びこれらの製造方法並びに半導体デバイスの製造方法

Related Child Applications (1)

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KR1020167003193A Division KR101992711B1 (ko) 2013-06-21 2014-06-19 마스크 블랭크용 기판, 마스크 블랭크, 전사용 마스크 및 이들의 제조방법, 그리고 반도체 디바이스의 제조방법

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Publication Number Publication Date
KR20150119121A KR20150119121A (ko) 2015-10-23
KR101597186B1 true KR101597186B1 (ko) 2016-02-24

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KR1020157024697A Active KR101597186B1 (ko) 2013-06-21 2014-06-19 마스크 블랭크용 기판, 마스크 블랭크, 전사용 마스크 및 이들의 제조방법, 그리고 반도체 디바이스의 제조방법
KR1020167003193A Active KR101992711B1 (ko) 2013-06-21 2014-06-19 마스크 블랭크용 기판, 마스크 블랭크, 전사용 마스크 및 이들의 제조방법, 그리고 반도체 디바이스의 제조방법

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US (2) US9690189B2 (enExample)
JP (2) JP5690981B1 (enExample)
KR (2) KR101597186B1 (enExample)
TW (2) TWI591423B (enExample)
WO (1) WO2014203961A1 (enExample)

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JP6266286B2 (ja) * 2013-09-27 2018-01-24 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法
US20170363952A1 (en) 2014-12-19 2017-12-21 Hoya Corporation Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device
TWI694304B (zh) * 2015-06-08 2020-05-21 日商Ａｇｃ股份有限公司 Ｅｕｖ微影術用反射型光罩基底
JP6094708B1 (ja) * 2015-09-28 2017-03-15 旭硝子株式会社 マスクブランク
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
CN109463000B (zh) * 2016-07-27 2022-03-29 Hoya株式会社 掩模坯料用基板、掩模坯料、转印用掩模以及它们的制造方法、半导体器件的制造方法
EP3364247A1 (en) * 2017-02-17 2018-08-22 ASML Netherlands B.V. Methods & apparatus for monitoring a lithographic manufacturing process
JP6229807B1 (ja) * 2017-02-22 2017-11-15 旭硝子株式会社 マスクブランク
US10552569B2 (en) * 2017-09-11 2020-02-04 Globalfoundries Inc. Method for calculating non-correctable EUV blank flatness for blank dispositioning
JP6899080B2 (ja) 2018-09-05 2021-07-07 信越半導体株式会社 ウェーハ形状データ化方法
US10859905B2 (en) 2018-09-18 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Photomask and method for forming the same
US20220043335A1 (en) * 2018-09-27 2022-02-10 Hoya Corporation Mask blank, transfer mask, and semiconductor-device manufacturing method
WO2021061477A1 (en) * 2019-09-27 2021-04-01 Corning Incorporated Devices, systems, and methods of generating and providing a target topographic map for finishing a photomask blank subject to functional requirements on flatness
JP2023088773A (ja) * 2021-12-15 2023-06-27 キオクシア株式会社 描画方法、原版製造方法および描画装置

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WO2011122608A1 (ja) 2010-03-30 2011-10-06 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法
JP2013016710A (ja) 2011-07-05 2013-01-24 Canon Inc 決定方法、プログラム及び露光方法

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JPS6440267A (en) 1987-08-07 1989-02-10 Shinetsu Chemical Co Manufacture of precisely polished glass
JP2002184667A (ja) * 2000-12-14 2002-06-28 Nikon Corp 補正部材の製造方法、投影光学系の製造方法および露光装置の調整方法
JP3627805B2 (ja) 2001-04-20 2005-03-09 信越化学工業株式会社 フォトマスク用ガラス基板及びその製造方法
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JP2004296939A (ja) * 2003-03-27 2004-10-21 Toshiba Corp 位置歪み補正装置、露光システム、露光方法及び位置歪み補正プログラム
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WO2011122608A1 (ja) 2010-03-30 2011-10-06 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法
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Publication number Publication date
US9690189B2 (en) 2017-06-27
JP6320944B2 (ja) 2018-05-09
TWI591423B (zh) 2017-07-11
TW201514613A (zh) 2015-04-16
US20170248841A1 (en) 2017-08-31
JP2015111283A (ja) 2015-06-18
US20160109797A1 (en) 2016-04-21
KR20150119121A (ko) 2015-10-23
WO2014203961A1 (ja) 2014-12-24
JP5690981B1 (ja) 2015-03-25
TWI611253B (zh) 2018-01-11
JPWO2014203961A1 (ja) 2017-02-23
KR101992711B1 (ko) 2019-06-25
US10168613B2 (en) 2019-01-01
TW201732416A (zh) 2017-09-16
KR20160021899A (ko) 2016-02-26

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