TWI591423B - A mask base substrate, a mask base, a transfer mask, a method of manufacturing the same, and a method of manufacturing the semiconductor device - Google Patents
A mask base substrate, a mask base, a transfer mask, a method of manufacturing the same, and a method of manufacturing the semiconductor device Download PDFInfo
- Publication number
- TWI591423B TWI591423B TW103121129A TW103121129A TWI591423B TW I591423 B TWI591423 B TW I591423B TW 103121129 A TW103121129 A TW 103121129A TW 103121129 A TW103121129 A TW 103121129A TW I591423 B TWI591423 B TW I591423B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- mask
- transfer
- film
- light
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 386
- 238000012546 transfer Methods 0.000 title claims description 174
- 238000004519 manufacturing process Methods 0.000 title claims description 97
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000000034 method Methods 0.000 claims description 60
- 238000004364 calculation method Methods 0.000 claims description 43
- 238000012937 correction Methods 0.000 claims description 40
- 230000001419 dependent effect Effects 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 15
- 230000007261 regionalization Effects 0.000 claims description 13
- 230000000873 masking effect Effects 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 138
- 230000003287 optical effect Effects 0.000 description 65
- 230000004075 alteration Effects 0.000 description 49
- 239000000523 sample Substances 0.000 description 45
- 238000009826 distribution Methods 0.000 description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 238000005286 illumination Methods 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 29
- 239000000463 material Substances 0.000 description 25
- 230000010363 phase shift Effects 0.000 description 25
- 230000006870 function Effects 0.000 description 23
- 239000012528 membrane Substances 0.000 description 18
- 238000005498 polishing Methods 0.000 description 18
- 229910052723 transition metal Inorganic materials 0.000 description 16
- 150000003624 transition metals Chemical class 0.000 description 15
- 238000010276 construction Methods 0.000 description 14
- 239000011521 glass Substances 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 239000011651 chromium Substances 0.000 description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000013074 reference sample Substances 0.000 description 9
- 229910052707 ruthenium Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000000470 constituent Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 7
- 238000003908 quality control method Methods 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 150000001845 chromium compounds Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007863 gel particle Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000005383 fluoride glass Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 230000036555 skin type Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- -1 transition metal cerium compound Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
- C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Glass (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013130443 | 2013-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201514613A TW201514613A (zh) | 2015-04-16 |
| TWI591423B true TWI591423B (zh) | 2017-07-11 |
Family
ID=52104687
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103121129A TWI591423B (zh) | 2013-06-21 | 2014-06-19 | A mask base substrate, a mask base, a transfer mask, a method of manufacturing the same, and a method of manufacturing the semiconductor device |
| TW106117095A TWI611253B (zh) | 2013-06-21 | 2014-06-19 | 遮罩基底用基板、遮罩基底、轉印用遮罩及其等之製造方法以及半導體元件之製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106117095A TWI611253B (zh) | 2013-06-21 | 2014-06-19 | 遮罩基底用基板、遮罩基底、轉印用遮罩及其等之製造方法以及半導體元件之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9690189B2 (enExample) |
| JP (2) | JP5690981B1 (enExample) |
| KR (2) | KR101597186B1 (enExample) |
| TW (2) | TWI591423B (enExample) |
| WO (1) | WO2014203961A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6266286B2 (ja) * | 2013-09-27 | 2018-01-24 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| US20170363952A1 (en) | 2014-12-19 | 2017-12-21 | Hoya Corporation | Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| TWI694304B (zh) * | 2015-06-08 | 2020-05-21 | 日商Ａｇｃ股份有限公司 | Ｅｕｖ微影術用反射型光罩基底 |
| JP6094708B1 (ja) * | 2015-09-28 | 2017-03-15 | 旭硝子株式会社 | マスクブランク |
| US10948814B2 (en) * | 2016-03-23 | 2021-03-16 | AGC Inc. | Substrate for use as mask blank, and mask blank |
| CN109463000B (zh) * | 2016-07-27 | 2022-03-29 | Hoya株式会社 | 掩模坯料用基板、掩模坯料、转印用掩模以及它们的制造方法、半导体器件的制造方法 |
| EP3364247A1 (en) * | 2017-02-17 | 2018-08-22 | ASML Netherlands B.V. | Methods & apparatus for monitoring a lithographic manufacturing process |
| JP6229807B1 (ja) * | 2017-02-22 | 2017-11-15 | 旭硝子株式会社 | マスクブランク |
| US10552569B2 (en) * | 2017-09-11 | 2020-02-04 | Globalfoundries Inc. | Method for calculating non-correctable EUV blank flatness for blank dispositioning |
| JP6899080B2 (ja) | 2018-09-05 | 2021-07-07 | 信越半導体株式会社 | ウェーハ形状データ化方法 |
| US10859905B2 (en) | 2018-09-18 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Photomask and method for forming the same |
| US20220043335A1 (en) * | 2018-09-27 | 2022-02-10 | Hoya Corporation | Mask blank, transfer mask, and semiconductor-device manufacturing method |
| WO2021061477A1 (en) * | 2019-09-27 | 2021-04-01 | Corning Incorporated | Devices, systems, and methods of generating and providing a target topographic map for finishing a photomask blank subject to functional requirements on flatness |
| JP2023088773A (ja) * | 2021-12-15 | 2023-06-27 | キオクシア株式会社 | 描画方法、原版製造方法および描画装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6440267A (en) | 1987-08-07 | 1989-02-10 | Shinetsu Chemical Co | Manufacture of precisely polished glass |
| JP2002184667A (ja) * | 2000-12-14 | 2002-06-28 | Nikon Corp | 補正部材の製造方法、投影光学系の製造方法および露光装置の調整方法 |
| JP3627805B2 (ja) | 2001-04-20 | 2005-03-09 | 信越化学工業株式会社 | フォトマスク用ガラス基板及びその製造方法 |
| JP4077288B2 (ja) * | 2002-09-30 | 2008-04-16 | 株式会社東芝 | フォトマスクの設計方法およびプログラム |
| JP2004296939A (ja) * | 2003-03-27 | 2004-10-21 | Toshiba Corp | 位置歪み補正装置、露光システム、露光方法及び位置歪み補正プログラム |
| JP4647510B2 (ja) * | 2006-02-08 | 2011-03-09 | 東京エレクトロン株式会社 | 基板の欠陥検査方法及びプログラム |
| US7372633B2 (en) | 2006-07-18 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus, aberration correction device and device manufacturing method |
| JP5317092B2 (ja) | 2008-03-23 | 2013-10-16 | Ｈｏｙａ株式会社 | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
| JP5335351B2 (ja) * | 2008-10-01 | 2013-11-06 | Ｈｏｙａ株式会社 | マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法 |
| EP2219077A1 (en) | 2009-02-12 | 2010-08-18 | Carl Zeiss SMT AG | Projection exposure method, projection exposure system and projection objective |
| JP2010278034A (ja) * | 2009-05-26 | 2010-12-09 | Canon Inc | 露光装置及びデバイス製造方法 |
| DE102010029651A1 (de) * | 2010-06-02 | 2011-12-08 | Carl Zeiss Smt Gmbh | Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern |
| JP5296260B2 (ja) * | 2010-03-30 | 2013-09-25 | Ｈｏｙａ株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP2011242298A (ja) | 2010-05-19 | 2011-12-01 | Nippon Steel Corp | 帯状体の形状測定装置、方法及びプログラム |
| WO2012102313A1 (ja) | 2011-01-26 | 2012-08-02 | 旭硝子株式会社 | フォトマスクの製造方法 |
| JP5835968B2 (ja) * | 2011-07-05 | 2015-12-24 | キヤノン株式会社 | 決定方法、プログラム及び露光方法 |
-
2014
- 2014-06-19 US US14/774,267 patent/US9690189B2/en active Active
- 2014-06-19 TW TW103121129A patent/TWI591423B/zh active
- 2014-06-19 KR KR1020157024697A patent/KR101597186B1/ko active Active
- 2014-06-19 JP JP2014550578A patent/JP5690981B1/ja active Active
- 2014-06-19 KR KR1020167003193A patent/KR101992711B1/ko active Active
- 2014-06-19 TW TW106117095A patent/TWI611253B/zh active
- 2014-06-19 WO PCT/JP2014/066263 patent/WO2014203961A1/ja not_active Ceased
-
2015
- 2015-01-29 JP JP2015015185A patent/JP6320944B2/ja active Active
-
2017
- 2017-05-12 US US15/593,564 patent/US10168613B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9690189B2 (en) | 2017-06-27 |
| JP6320944B2 (ja) | 2018-05-09 |
| TW201514613A (zh) | 2015-04-16 |
| US20170248841A1 (en) | 2017-08-31 |
| KR101597186B1 (ko) | 2016-02-24 |
| JP2015111283A (ja) | 2015-06-18 |
| US20160109797A1 (en) | 2016-04-21 |
| KR20150119121A (ko) | 2015-10-23 |
| WO2014203961A1 (ja) | 2014-12-24 |
| JP5690981B1 (ja) | 2015-03-25 |
| TWI611253B (zh) | 2018-01-11 |
| JPWO2014203961A1 (ja) | 2017-02-23 |
| KR101992711B1 (ko) | 2019-06-25 |
| US10168613B2 (en) | 2019-01-01 |
| TW201732416A (zh) | 2017-09-16 |
| KR20160021899A (ko) | 2016-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI591423B (zh) | A mask base substrate, a mask base, a transfer mask, a method of manufacturing the same, and a method of manufacturing the semiconductor device | |
| TWI822936B (zh) | 反射型遮罩基底、反射型遮罩以及半導體裝置之製造方法 | |
| JP6033987B1 (ja) | マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法 | |
| JPWO2018135468A1 (ja) | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 | |
| TW201730663A (zh) | 遮罩基底用基板、具多層反射膜之基板、反射型遮罩基底及反射型遮罩以及半導體裝置之製造方法 | |
| JP2019070854A (ja) | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 | |
| TW201921092A (zh) | 光罩空白基板以及其製造方法 | |
| JP6266286B2 (ja) | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 | |
| JP7168573B2 (ja) | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 | |
| JP6199115B2 (ja) | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 | |
| CN109463000B (zh) | 掩模坯料用基板、掩模坯料、转印用掩模以及它们的制造方法、半导体器件的制造方法 | |
| KR20150127814A (ko) | 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법 | |
| JP2013195719A (ja) | マスクブランク、転写用マスク、及び半導体装置の製造方法 |