KR101574896B1 - 광조사 장치 및 광조사 방법 - Google Patents

광조사 장치 및 광조사 방법 Download PDF

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Publication number
KR101574896B1
KR101574896B1 KR1020140085114A KR20140085114A KR101574896B1 KR 101574896 B1 KR101574896 B1 KR 101574896B1 KR 1020140085114 A KR1020140085114 A KR 1020140085114A KR 20140085114 A KR20140085114 A KR 20140085114A KR 101574896 B1 KR101574896 B1 KR 101574896B1
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KR
South Korea
Prior art keywords
substrate
base material
main surface
light irradiation
housing
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KR1020140085114A
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English (en)
Korean (ko)
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KR20150018373A (ko
Inventor
고지 시부타
다카시 우에노
Original Assignee
가부시키가이샤 스크린 홀딩스
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Publication of KR20150018373A publication Critical patent/KR20150018373A/ko
Application granted granted Critical
Publication of KR101574896B1 publication Critical patent/KR101574896B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Coating Apparatus (AREA)
KR1020140085114A 2013-08-08 2014-07-08 광조사 장치 및 광조사 방법 KR101574896B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013165029A JP6152010B2 (ja) 2013-08-08 2013-08-08 光照射装置および光照射方法
JPJP-P-2013-165029 2013-08-08

Publications (2)

Publication Number Publication Date
KR20150018373A KR20150018373A (ko) 2015-02-23
KR101574896B1 true KR101574896B1 (ko) 2015-12-04

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ID=52502794

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140085114A KR101574896B1 (ko) 2013-08-08 2014-07-08 광조사 장치 및 광조사 방법

Country Status (4)

Country Link
JP (1) JP6152010B2 (ja)
KR (1) KR101574896B1 (ja)
CN (1) CN104347455A (ja)
TW (1) TWI567796B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7336256B2 (ja) * 2019-05-10 2023-08-31 東京エレクトロン株式会社 載置台及び載置台の作製方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008043925A (ja) * 2006-08-21 2008-02-28 Ushio Inc エキシマランプ装置
JP2011049265A (ja) * 2009-08-26 2011-03-10 Lintec Corp 光照射装置及び光照射方法
JP2012206266A (ja) 2011-03-29 2012-10-25 Lintec Corp 光照射装置および光照射方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6229093U (ja) * 1985-08-06 1987-02-21
JPH03222429A (ja) * 1990-01-29 1991-10-01 Mitsubishi Electric Corp 半導体製造装置
JPH0677198A (ja) * 1992-08-28 1994-03-18 Hitachi Ltd 有機物除去装置
JP4218192B2 (ja) * 1999-08-05 2009-02-04 株式会社日立ハイテクノロジーズ 基板処理装置及び処理方法
CN100565794C (zh) * 2004-09-24 2009-12-02 株式会社半导体能源研究所 半导体器件及其制造方法
JP4479466B2 (ja) * 2004-11-04 2010-06-09 ウシオ電機株式会社 エキシマ光照射装置
JP2006219689A (ja) * 2005-02-08 2006-08-24 Seiko Instruments Inc 薄膜製造装置、及び半導体薄膜の形成方法
JP2007324170A (ja) * 2006-05-30 2007-12-13 Yoshimi Shiotani 照射装置及び照射装置を用いた半導体製造装置
JP5456257B2 (ja) * 2008-01-08 2014-03-26 大日本スクリーン製造株式会社 熱処理装置
JP5294678B2 (ja) * 2008-04-07 2013-09-18 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
US8410712B2 (en) * 2008-07-09 2013-04-02 Ncc Nano, Llc Method and apparatus for curing thin films on low-temperature substrates at high speeds
JP2011091386A (ja) * 2009-09-24 2011-05-06 Semiconductor Energy Lab Co Ltd 熱処理装置、熱処理方法及び半導体装置の作製方法
JP5601312B2 (ja) * 2011-11-25 2014-10-08 ウシオ電機株式会社 光照射装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008043925A (ja) * 2006-08-21 2008-02-28 Ushio Inc エキシマランプ装置
JP2011049265A (ja) * 2009-08-26 2011-03-10 Lintec Corp 光照射装置及び光照射方法
JP2012206266A (ja) 2011-03-29 2012-10-25 Lintec Corp 光照射装置および光照射方法

Also Published As

Publication number Publication date
CN104347455A (zh) 2015-02-11
KR20150018373A (ko) 2015-02-23
TWI567796B (zh) 2017-01-21
JP2015035472A (ja) 2015-02-19
JP6152010B2 (ja) 2017-06-21
TW201521093A (zh) 2015-06-01

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