KR101549775B1 - 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 - Google Patents

반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 Download PDF

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KR101549775B1
KR101549775B1 KR1020140012672A KR20140012672A KR101549775B1 KR 101549775 B1 KR101549775 B1 KR 101549775B1 KR 1020140012672 A KR1020140012672 A KR 1020140012672A KR 20140012672 A KR20140012672 A KR 20140012672A KR 101549775 B1 KR101549775 B1 KR 101549775B1
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gas
supplying
film
process gas
substrate
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KR20140106397A (ko
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요시토모 하시모토
요시로 히로세
아츠시 사노
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020140012672A 2013-02-26 2014-02-04 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 Active KR101549775B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013036278A JP6035166B2 (ja) 2013-02-26 2013-02-26 半導体装置の製造方法、基板処理装置およびプログラム
JPJP-P-2013-036278 2013-02-26

Publications (2)

Publication Number Publication Date
KR20140106397A KR20140106397A (ko) 2014-09-03
KR101549775B1 true KR101549775B1 (ko) 2015-09-02

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KR1020140012672A Active KR101549775B1 (ko) 2013-02-26 2014-02-04 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체

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Country Link
US (1) US9704703B2 (https=)
JP (1) JP6035166B2 (https=)
KR (1) KR101549775B1 (https=)
TW (1) TWI584377B (https=)

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US10322936B2 (en) * 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
JP5847783B2 (ja) * 2013-10-21 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
US9607825B2 (en) * 2014-04-08 2017-03-28 International Business Machines Corporation Hydrogen-free silicon-based deposited dielectric films for nano device fabrication
JP6525567B2 (ja) * 2014-12-02 2019-06-05 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6523080B2 (ja) * 2015-07-10 2019-05-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6055879B1 (ja) 2015-08-05 2016-12-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6545093B2 (ja) * 2015-12-14 2019-07-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6561001B2 (ja) * 2016-03-09 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、ガス供給系およびプログラム
JP6851173B2 (ja) * 2016-10-21 2021-03-31 東京エレクトロン株式会社 成膜装置および成膜方法
JP6920082B2 (ja) 2017-03-17 2021-08-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6602332B2 (ja) * 2017-03-28 2019-11-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US10872762B2 (en) * 2017-11-08 2020-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming silicon oxide layer and semiconductor structure
KR102541454B1 (ko) 2018-04-26 2023-06-09 삼성전자주식회사 저유전막의 형성 방법, 및 반도체 소자의 형성방법
US11535931B2 (en) * 2018-06-26 2022-12-27 Kokusai Electric Corporation Method of manufacturing semiconductor device, method of managing parts, and recording medium
WO2020170482A1 (ja) * 2019-02-19 2020-08-27 株式会社明電舎 原子層堆積方法および原子層堆積装置
US11414755B2 (en) 2019-02-19 2022-08-16 Meidensha Corporation Atomic layer deposition method and atomic layer deposition device
JP6946374B2 (ja) * 2019-06-20 2021-10-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP6990756B2 (ja) * 2020-11-04 2022-01-12 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
JP7304905B2 (ja) * 2021-01-29 2023-07-07 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

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US20100210094A1 (en) 2009-02-19 2010-08-19 Tokyo Electron Limited Method for using apparatus configured to form germanium-containing film
KR101233136B1 (ko) 2010-04-12 2013-02-14 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치

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Publication number Publication date
TWI584377B (zh) 2017-05-21
US20140242809A1 (en) 2014-08-28
US9704703B2 (en) 2017-07-11
TW201438105A (zh) 2014-10-01
KR20140106397A (ko) 2014-09-03
JP6035166B2 (ja) 2016-11-30
JP2014165395A (ja) 2014-09-08

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