KR101544274B1 - 표시 장치 제조용 포토마스크 및 패턴 전사 방법 - Google Patents

표시 장치 제조용 포토마스크 및 패턴 전사 방법 Download PDF

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KR101544274B1
KR101544274B1 KR1020130127121A KR20130127121A KR101544274B1 KR 101544274 B1 KR101544274 B1 KR 101544274B1 KR 1020130127121 A KR1020130127121 A KR 1020130127121A KR 20130127121 A KR20130127121 A KR 20130127121A KR 101544274 B1 KR101544274 B1 KR 101544274B1
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South Korea
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pattern
exposure
light
photomask
main pattern
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KR20140052890A (ko
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노부히사 이마시끼
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
KR1020130127121A 2012-10-25 2013-10-24 표시 장치 제조용 포토마스크 및 패턴 전사 방법 Active KR101544274B1 (ko)

Applications Claiming Priority (2)

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JP2012235424 2012-10-25
JPJP-P-2012-235424 2012-10-25

Related Child Applications (1)

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KR1020140124148A Division KR101544324B1 (ko) 2012-10-25 2014-09-18 표시 장치 제조용 포토마스크 및 패턴 전사 방법

Publications (2)

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KR20140052890A KR20140052890A (ko) 2014-05-07
KR101544274B1 true KR101544274B1 (ko) 2015-08-12

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KR1020130127121A Active KR101544274B1 (ko) 2012-10-25 2013-10-24 표시 장치 제조용 포토마스크 및 패턴 전사 방법
KR1020140124148A Active KR101544324B1 (ko) 2012-10-25 2014-09-18 표시 장치 제조용 포토마스크 및 패턴 전사 방법

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JP (1) JP5916680B2 (enrdf_load_stackoverflow)
KR (2) KR101544274B1 (enrdf_load_stackoverflow)
CN (1) CN103777462B (enrdf_load_stackoverflow)
TW (1) TWI541588B (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
WO2017086590A1 (en) * 2015-11-19 2017-05-26 Rohm And Haas Electronic Materials Korea Ltd. Method for preparing column spacer
KR101755318B1 (ko) 2015-11-19 2017-07-10 롬엔드하스전자재료코리아유한회사 컬럼 스페이서의 제조방법
CN106773524A (zh) * 2017-02-20 2017-05-31 京东方科技集团股份有限公司 掩膜板
CN110770614A (zh) * 2017-05-16 2020-02-07 应用材料公司 使用倍频干涉光刻的线栅偏振器制造方法
US10942575B2 (en) 2017-06-07 2021-03-09 Cisco Technology, Inc. 2D pointing indicator analysis
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
JP6731441B2 (ja) * 2018-05-01 2020-07-29 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP2019012280A (ja) * 2018-09-19 2019-01-24 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6872061B2 (ja) * 2020-05-11 2021-05-19 Hoya株式会社 フォトマスク及び表示装置の製造方法
CN113608406A (zh) * 2021-05-27 2021-11-05 联芯集成电路制造(厦门)有限公司 光掩模结构
WO2024065153A1 (zh) * 2022-09-27 2024-04-04 京东方科技集团股份有限公司 阵列基板及其制作方法、掩膜版、显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008116862A (ja) 2006-11-08 2008-05-22 Elpida Memory Inc フォトマスク

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JP2881892B2 (ja) * 1990-01-16 1999-04-12 富士通株式会社 投影露光用マスク
JPH05165194A (ja) * 1991-12-16 1993-06-29 Nec Corp フォトマスク
JP2882233B2 (ja) * 1993-03-29 1999-04-12 凸版印刷株式会社 補助パターン付き位相シフトマスクの製造方法
JP3283624B2 (ja) * 1993-04-12 2002-05-20 株式会社日立製作所 ホトマスク
JP3577363B2 (ja) * 1994-06-29 2004-10-13 株式会社ルネサステクノロジ 半導体装置の製造方法
JPH1092706A (ja) * 1996-09-10 1998-04-10 Sony Corp 露光方法、及び該露光方法を用いた半導体装置の製造方法
JP2002323746A (ja) * 2001-04-24 2002-11-08 Matsushita Electric Ind Co Ltd 位相シフトマスク及び、それを用いたホールパターン形成方法
JP2002351046A (ja) * 2001-05-24 2002-12-04 Nec Corp 位相シフトマスクおよびその設計方法
JP4314285B2 (ja) * 2003-02-17 2009-08-12 パナソニック株式会社 フォトマスク
JP5524447B2 (ja) * 2007-09-25 2014-06-18 ピーエスフォー ルクスコ エスエイアールエル 露光用マスク、パターン形成方法及び露光用マスクの製造方法
JP2009169255A (ja) * 2008-01-18 2009-07-30 Nsk Ltd 露光装置及び基板の製造方法ならびにマスク
JP5106220B2 (ja) * 2008-04-10 2012-12-26 キヤノン株式会社 原版データ生成プログラム、原版データ生成方法、照明条件決定プログラム、照明条件決定方法およびデバイス製造方法
JP2012073326A (ja) * 2010-09-28 2012-04-12 Toppan Printing Co Ltd フォトマスク、フォトマスクブランク及びフォトマスクの製造方法

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JP2008116862A (ja) 2006-11-08 2008-05-22 Elpida Memory Inc フォトマスク

Also Published As

Publication number Publication date
TW201421148A (zh) 2014-06-01
JP2014102496A (ja) 2014-06-05
KR101544324B1 (ko) 2015-08-12
KR20140052890A (ko) 2014-05-07
TWI541588B (zh) 2016-07-11
CN103777462B (zh) 2017-03-01
KR20140130387A (ko) 2014-11-10
JP5916680B2 (ja) 2016-05-11
CN103777462A (zh) 2014-05-07

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