KR101541906B1 - 미소 전기기계식 장치 및 그 제작 방법 - Google Patents

미소 전기기계식 장치 및 그 제작 방법 Download PDF

Info

Publication number
KR101541906B1
KR101541906B1 KR1020080107888A KR20080107888A KR101541906B1 KR 101541906 B1 KR101541906 B1 KR 101541906B1 KR 1020080107888 A KR1020080107888 A KR 1020080107888A KR 20080107888 A KR20080107888 A KR 20080107888A KR 101541906 B1 KR101541906 B1 KR 101541906B1
Authority
KR
South Korea
Prior art keywords
layer
material layer
electrode layer
forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080107888A
Other languages
English (en)
Korean (ko)
Other versions
KR20090047357A (ko
Inventor
카오루 츠치야
타카후미 미조구치
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20090047357A publication Critical patent/KR20090047357A/ko
Application granted granted Critical
Publication of KR101541906B1 publication Critical patent/KR101541906B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/007—For controlling stiffness, e.g. ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element
    • Y10S977/732—Nanocantilever
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element
    • Y10S977/733—Nanodiaphragm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
KR1020080107888A 2007-11-07 2008-10-31 미소 전기기계식 장치 및 그 제작 방법 Expired - Fee Related KR101541906B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-289224 2007-11-07
JP2007289224 2007-11-07

Publications (2)

Publication Number Publication Date
KR20090047357A KR20090047357A (ko) 2009-05-12
KR101541906B1 true KR101541906B1 (ko) 2015-08-03

Family

ID=40588367

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080107888A Expired - Fee Related KR101541906B1 (ko) 2007-11-07 2008-10-31 미소 전기기계식 장치 및 그 제작 방법

Country Status (3)

Country Link
US (2) US7872320B2 (https=)
JP (1) JP5271671B2 (https=)
KR (1) KR101541906B1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010286471A (ja) * 2009-05-15 2010-12-24 Seiko Epson Corp Ｍｅｍｓセンサー、電子機器
JP5396335B2 (ja) 2009-05-28 2014-01-22 株式会社半導体エネルギー研究所 タッチパネル
JP5866089B2 (ja) * 2009-11-20 2016-02-17 株式会社半導体エネルギー研究所 電子機器
TWI507934B (zh) * 2009-11-20 2015-11-11 Semiconductor Energy Lab 顯示裝置
CN102713999B (zh) 2010-01-20 2016-01-20 株式会社半导体能源研究所 电子设备和电子系统
US8367459B2 (en) 2010-12-14 2013-02-05 Sharp Laboratories Of America, Inc. Organic semiconductor interface preparation
US9223618B2 (en) 2011-09-20 2015-12-29 Intel Corporation Multi-threaded queuing system for pattern matching
CN102980694B (zh) * 2012-11-29 2015-07-29 北京大学 无应变膜结构的mems压阻式压力传感器及其制作方法
US20150122531A1 (en) * 2013-11-01 2015-05-07 Carestream Health, Inc. Strain gauge
CN103730511B (zh) * 2013-12-26 2016-03-23 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板、显示装置
CN106044704B (zh) * 2016-06-27 2017-09-29 李岩 微电子机械系统结构形成方法
CN117548321A (zh) * 2022-08-05 2024-02-13 天津大学 具有双承载层的微机械超声换能器结构及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6753488B2 (en) 2002-09-20 2004-06-22 Kabushiki Kaisha Toshiba Microswitch and method of manufacturing the same
JP2009059866A (ja) 2007-08-31 2009-03-19 Omron Corp 素子集合体及びその製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278925A (ja) * 1988-09-16 1990-03-19 Yokohama Syst Kenkyusho:Kk 静電容量型圧力センサ
DE19536250A1 (de) * 1995-09-28 1997-04-03 Siemens Ag Mikroelektronischer, integrierter Sensor und Verfahren zur Herstellung des Sensors
JP2000273236A (ja) 1999-03-25 2000-10-03 Jsr Corp 親水性多孔質膜
US6749733B1 (en) * 2000-04-10 2004-06-15 Intel Corporation Materials classifier, method of using, and method of making
JP2002170470A (ja) * 2000-11-28 2002-06-14 Matsushita Electric Works Ltd 半導体マイクロリレー及びその製造方法
US6465280B1 (en) * 2001-03-07 2002-10-15 Analog Devices, Inc. In-situ cap and method of fabricating same for an integrated circuit device
JP4773630B2 (ja) * 2001-05-15 2011-09-14 株式会社デンソー ダイアフラム型半導体装置とその製造方法
US6780786B2 (en) * 2001-11-26 2004-08-24 The Regents Of The University Of California Method for producing a porous silicon film
US7943412B2 (en) * 2001-12-10 2011-05-17 International Business Machines Corporation Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters
TW576864B (en) * 2001-12-28 2004-02-21 Toshiba Corp Method for manufacturing a light-emitting device
JP4077312B2 (ja) 2001-12-28 2008-04-16 株式会社東芝 発光素子の製造方法および発光素子
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
KR100470634B1 (ko) * 2002-10-02 2005-03-10 한국전자통신연구원 축전식 미세전자기계적 스위치 및 그 제조 방법
US6917459B2 (en) * 2003-06-03 2005-07-12 Hewlett-Packard Development Company, L.P. MEMS device and method of forming MEMS device
JP4269806B2 (ja) * 2003-06-30 2009-05-27 カシオ計算機株式会社 半導体装置およびその製造方法
JP4519804B2 (ja) 2005-05-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7560789B2 (en) * 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2007276089A (ja) * 2006-04-11 2007-10-25 Sony Corp 電気機械素子とその製造方法、並びに共振器とその製造方法
US7687833B2 (en) * 2006-05-31 2010-03-30 Stmicroelectronics S.A. Component containing a baw filter
JP2008132583A (ja) * 2006-10-24 2008-06-12 Seiko Epson Corp Ｍｅｍｓデバイス
JP5127210B2 (ja) * 2006-11-30 2013-01-23 株式会社日立製作所 Ｍｅｍｓセンサが混載された半導体装置
JP4337870B2 (ja) * 2006-12-15 2009-09-30 セイコーエプソン株式会社 Ｍｅｍｓレゾネータ及びｍｅｍｓレゾネータの製造方法
US7687297B2 (en) * 2007-06-29 2010-03-30 Intel Corporation Forming a cantilever assembly for vertical and lateral movement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6753488B2 (en) 2002-09-20 2004-06-22 Kabushiki Kaisha Toshiba Microswitch and method of manufacturing the same
JP2009059866A (ja) 2007-08-31 2009-03-19 Omron Corp 素子集合体及びその製造方法

Also Published As

Publication number Publication date
JP5271671B2 (ja) 2013-08-21
JP2009131951A (ja) 2009-06-18
US20110159626A1 (en) 2011-06-30
US7872320B2 (en) 2011-01-18
US8168461B2 (en) 2012-05-01
US20090117364A1 (en) 2009-05-07
KR20090047357A (ko) 2009-05-12

Similar Documents

Publication Publication Date Title
KR101541906B1 (ko) 미소 전기기계식 장치 및 그 제작 방법
KR101062030B1 (ko) 다층 구조의 전자 장치 제조 방법
Jeong et al. Directly drawn poly (3-hexylthiophene) field-effect transistors by electrohydrodynamic jet printing: improving performance with surface modification
US7560789B2 (en) Semiconductor device
Ding et al. Flexible small-channel thin-film transistors by electrohydrodynamic lithography
JP5317635B2 (ja) 微小電気機械式装置の作製方法
US20180175297A1 (en) Screen Printing Systems and Techniques for Creating Thin-Film Transistors Using Separated Carbon Nanotubes
US10280071B2 (en) Method for producing a rolled-up electrical or electronic component
US8093088B2 (en) Manufacturing method of micro-electro-mechanical device
TWI401803B (zh) 微結構、微機械、有機電晶體、電氣設備、及其製造方法
JP4587320B2 (ja) 微小構造体、マイクロマシン、およびこれらの作製方法
JP2009239033A (ja) 有機薄膜トランジスタまたは／および有機薄膜トランジスタアレイの製造方法と有機薄膜トランジスタ、有機薄膜トランジスタアレイ
JP5271674B2 (ja) 微小電気機械式装置
Mandal et al. Inkjet printed organic thin film transistors: Achievements and challenges
JP5127181B2 (ja) 微小電気機械式装置の作製方法
JP2009032782A (ja) 電子装置の製造方法
JP2024522384A (ja) 基板上に高解像度パターンを生成するための方法およびシステム
Shin et al. The effect of thermal annealing on pentacene thin film transistor with micro contact printing
JP4700976B2 (ja) 電界効果型有機トランジスタの製造方法
JP4520383B2 (ja) 電着方法
FI130437B (fi) Menetelmä ja järjestelmä korkearesoluutioisen kuvion muodostamiseksi substraatille
JP4995503B2 (ja) 微小電気機械式装置の作製方法
TWI305961B (en) Method of fabricating a electrical device
JP2006228931A (ja) 有機薄膜トランジスタ及びその製造方法
JP2013225560A (ja) 有機デバイス及びその製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180628

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200729

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200729