CN106044704B - 微电子机械系统结构形成方法 - Google Patents
微电子机械系统结构形成方法 Download PDFInfo
- Publication number
- CN106044704B CN106044704B CN201610478764.0A CN201610478764A CN106044704B CN 106044704 B CN106044704 B CN 106044704B CN 201610478764 A CN201610478764 A CN 201610478764A CN 106044704 B CN106044704 B CN 106044704B
- Authority
- CN
- China
- Prior art keywords
- layer
- polycrystalline silicon
- thickness
- substrate
- metal level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Micromachines (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
氮化硅 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
碳化硅 | 2.54 | 1.75 | 0.28 | 4.3 | 1.36 | 1.29 | 2.2 | 3 | 1.2 | 3.8 | 1.48 |
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610478764.0A CN106044704B (zh) | 2016-06-27 | 2016-06-27 | 微电子机械系统结构形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610478764.0A CN106044704B (zh) | 2016-06-27 | 2016-06-27 | 微电子机械系统结构形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106044704A CN106044704A (zh) | 2016-10-26 |
CN106044704B true CN106044704B (zh) | 2017-09-29 |
Family
ID=57165740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610478764.0A Active CN106044704B (zh) | 2016-06-27 | 2016-06-27 | 微电子机械系统结构形成方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106044704B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1334594A (zh) * | 2001-08-24 | 2002-02-06 | 清华大学 | 硅基单面加工悬浮结构微机械电感的制作方法 |
CN1484280A (zh) * | 2003-08-11 | 2004-03-24 | 中国科学院上海技术物理研究所 | 含氧化多孔硅的低阻硅衬底及其制备 |
CN102205942A (zh) * | 2011-05-13 | 2011-10-05 | 上海集成电路研发中心有限公司 | Mems牺牲层结构制造方法 |
US8273653B2 (en) * | 2008-06-06 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microscopic structure packaging method and device with packaged microscopic structure |
CN104627949A (zh) * | 2013-11-14 | 2015-05-20 | 盛美半导体设备(上海)有限公司 | 微电子机械系统结构形成方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101541906B1 (ko) * | 2007-11-07 | 2015-08-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 미소 전기기계식 장치 및 그 제작 방법 |
-
2016
- 2016-06-27 CN CN201610478764.0A patent/CN106044704B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1334594A (zh) * | 2001-08-24 | 2002-02-06 | 清华大学 | 硅基单面加工悬浮结构微机械电感的制作方法 |
CN1484280A (zh) * | 2003-08-11 | 2004-03-24 | 中国科学院上海技术物理研究所 | 含氧化多孔硅的低阻硅衬底及其制备 |
US8273653B2 (en) * | 2008-06-06 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microscopic structure packaging method and device with packaged microscopic structure |
CN102205942A (zh) * | 2011-05-13 | 2011-10-05 | 上海集成电路研发中心有限公司 | Mems牺牲层结构制造方法 |
CN104627949A (zh) * | 2013-11-14 | 2015-05-20 | 盛美半导体设备(上海)有限公司 | 微电子机械系统结构形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106044704A (zh) | 2016-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102239539B (zh) | 制造衬底的方法 | |
JP6882469B2 (ja) | 高アスペクト比の構造体のための除去方法 | |
TWI441279B (zh) | 製造基板之方法 | |
TWI380362B (en) | Selective etch chemistries for forming high aspect ratio features and associated structures | |
TWI336355B (en) | Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques | |
CN102239541B (zh) | 制造衬底的方法 | |
TW201921459A (zh) | 選擇性蝕刻的自對準通孔製程 | |
TW200908093A (en) | Method for fabricating semiconductor device | |
TW200523998A (en) | Techniques for patterning features in semiconductor devices | |
TW200308019A (en) | Method for reducing pitch between conductive features, and structure formed using the method | |
TWI628508B (zh) | 形成圖案的方法 | |
WO2008005630B1 (en) | Methods for minimizing mask undercuts and notches for plasma processing system | |
TWI534889B (zh) | 減輕自我對準圖案化蝕刻中之非對稱輪廓 | |
TWI400752B (zh) | 在基板中形成深溝槽之方法 | |
JP2014135435A (ja) | 半導体装置の製造方法 | |
CN106044704B (zh) | 微电子机械系统结构形成方法 | |
US10861739B2 (en) | Method of patterning low-k materials using thermal decomposition materials | |
JP2015015425A (ja) | パターン形成方法 | |
TWI378508B (en) | Oxide pattern forming method and patterning method of semiconductor device | |
CN103531464A (zh) | 氮化硅高深宽比孔的刻蚀方法 | |
NL8202103A (nl) | Werkwijze voor het met behulp van reactieve ionen etsen van tantalum en silicium bevattende lagen. | |
TWI262558B (en) | Planarization method of spin-on material layer and manufacturing method of photoresist layer | |
JP2007005756A (ja) | 半導体素子のコンタクト孔の形成方法 | |
JP2017535075A (ja) | フォトリソグラフィを用いない自己整合逆活性エッチングのための方法 | |
KR102392447B1 (ko) | 패터닝 필름으로서 유기실리케이트를 사용하는 방법 및 시스템 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhu Xiaoyan Inventor after: Liu Na Inventor after: Wen Jinyou Inventor after: Li Yan Inventor after: Qi Jia Inventor before: Li Yan Inventor before: Qi Jia |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhu Xiaoyan Inventor after: Liu Na Inventor after: Wen Jinyou Inventor after: Li Yan Inventor after: Qi Jia Inventor before: Zhu Xiaoyan Inventor before: Liu Na Inventor before: Wen Jinyou Inventor before: Li Yan Inventor before: Qi Jia |