JP2017535075A - フォトリソグラフィを用いない自己整合逆活性エッチングのための方法 - Google Patents
フォトリソグラフィを用いない自己整合逆活性エッチングのための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 86
- 238000005530 etching Methods 0.000 title claims abstract description 42
- 230000002441 reversible effect Effects 0.000 title claims description 14
- 238000000206 photolithography Methods 0.000 title claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 81
- 230000008569 process Effects 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000002955 isolation Methods 0.000 claims abstract description 18
- 238000005498 polishing Methods 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000001020 plasma etching Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000003750 conditioning effect Effects 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000012876 topography Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
Description
本開示は、半導体集積回路の加工に関し、より具体的には、フォトリソグラフィを用いない自己整合逆活性エッチングを使用して半導体集積回路を加工する方法に関する。
すでにパターン形成された活性シャロートレンチアイソレーション(STI)に逆活性エッチングフォトマスクを整合させようとする際、固有の問題が存在する。リソグラフィプロセスにおけるわずかな変動および誤差のため、蓄積重複が存在する。リソグラフィマージンに加え、本プロセスステップにおける典型的高密度プラズマ(HDP)酸化物充填は、HDP酸化物プロセスの性質に起因して傾けられる。この傾きは、特定の量の重複に、HDP充填の角度付けられた部分上にフォトレジストを印刷することを妨害させる。
したがって、フォトリソグラフィを使用せずに、正確な逆活性エッチングパターン形成を行うための改良された方法が必要とされる。
本開示の実施形態によると、リソグラフィは、逆活性レベルパターン形成を行うために要求されない。代わりに、部分的に平坦化された有機ケイ酸塩(DUO)の層が、シャロートレンチアイソレーション(STI)充填後、ウエハ上にスピンコーティングされる。次いで、DUO層は、特定の選択性においてDUOおよび高密度プラズマ(HDP)酸化物をエッチングするように具体的に調整された特殊プロセスを使用してエッチングされる。ウエハトポグラフィのより高い区域(活性Si区域)は、より薄いDUOを有し、エッチングプロセスが進むにつれて、これらの区域(活性Si区域)内のHDP酸化物を通してエッチングし始める。エッチングプロセスは、特定の深度が達成された後、停止される。これらの区域(活性Si区域)は、逆マスクフォトリソグラフィによって開放され、続いて、エッチングされる区域と同一区域である(図1、ステップ110参照)。DUOの材料特性は、本開示の特定の例示的実施形態による、前述のプロセスのフロントエンドオブライン(FEOL)適用を可能にする。エッチング選択性の類似制御が得られ得る場合、他の材料がDUOの代わりに使用されてもよいことが検討され、これは、本開示の範囲内である。
Claims (20)
- 半導体ウエハのフォトリソグラフィを用いない自己整合逆活性エッチングのための方法であって、前記方法は、
パッド酸化物を半導体ウエハのシリコン基板上に堆積させるステップと、
活性窒化ケイ素を前記パッド酸化物上に堆積させるステップと、
シャロートレンチアイソレーション(STI)ウェルを前記シリコン基板内に形成するステップと、
酸化ライナを前記STIウェル内に形成するステップであって、前記酸化ライナは、前記シリコン基板が露出される場所のみに形成される、ステップと、
酸化物を前記窒化ケイ素および前記STIウェルを覆って堆積させるステップと、
部分的に平坦化された有機ケイ酸塩(DUO)層を前記酸化物を覆って堆積させるステップと、
乾式プラズマエッチングを行うことにより、前記DUO層を前記酸化物から除去するステップと、
化学機械研磨(CMP)を行うことにより、前記活性窒化ケイ素を被覆する前記酸化物の全てを除去するステップと、
前記活性窒化ケイ素を除去するステップであって、前記シリコン基板の一部は、残りの酸化物間に露出され、前記シリコン基板内での活性トランジスタ要素ドーピングのステップのための準備ができている、ステップと
を含む、方法。 - 前記パッド酸化物は、窒化ケイ素である、請求項1に記載の方法。
- 前記STIウェルを形成するステップは、前記シリコン基板をエッチングすることにより、前記STIウェルを形成するステップを含む、請求項1に記載の方法。
- 前記酸化ライナは、酸化ケイ素である、請求項1に記載の方法。
- 酸化物を前記酸化ライナを覆って堆積させるステップは、高密度プラズマ(HDP)酸化物を前記酸化ライナを覆って堆積させるステップを含む、請求項1に記載の方法。
- 前記DUO層を前記酸化物を覆って堆積させるステップは、前記DUO層を前記酸化物上にスピンコーティングするステップを含む、請求項1に記載の方法。
- 前記DUO層を前記酸化物から除去するステップは、調整エッチングを行うことにより、前記DUO層を開放するステップと、短い選択的エッチングを前記DUO層にエッチングするステップとを含み、前記半導体ウエハは、酸化物エッチング装置内でエッチングされる、請求項1に記載の方法。
- 前記DUO層を前記酸化物から除去するステップは、複数の乾式プラズマエッチングのステップを含む、請求項1に記載の方法。
- 前記複数の乾式プラズマエッチングのステップは、酸化物に対して非選択的にエッチングするステップと、酸化物に対して部分的にエッチングするステップとを含む、請求項8に記載の方法。
- 前記酸化物に対して非選択的にエッチングするステップは、CF4、O2、およびArから成る群から選択されたガスを使用する、請求項9に記載の方法。
- 酸化物に対して部分的にエッチングするステップは、C5F8、O2、N2、およびArから成る群から選択されたガスを使用する、請求項9に記載の方法。
- 前記DUO層を前記酸化物から除去するステップは、前記乾式プラズマエッチングを行うステップが完了されるまで行われる、請求項1に記載の方法。
- 半導体集積回路であって、
パッド酸化物を半導体ウエハのシリコン基板上に堆積させるステップと、
活性窒化ケイ素を前記パッド酸化物上に堆積させるステップと、
シャロートレンチアイソレーション(STI)ウェルを前記シリコン基板内に形成するステップと、
酸化ライナを前記STIウェル内に形成するステップであって、前記酸化ライナは、前記シリコン基板が露出される場所のみに形成される、ステップと、
酸化物を前記窒化ケイ素および前記STIウェルを覆って堆積させるステップと、
部分的に平坦化された有機ケイ酸塩(DUO)層を前記酸化物を覆って堆積させるステップと、
乾式プラズマエッチングを行うことにより、前記DUO層を前記酸化物から除去するステップと、
化学機械研磨(CMP)を行うことにより、前記活性窒化ケイ素を被覆する前記酸化物の全てを除去するステップと、
前記活性窒化ケイ素を除去するステップであって、前記シリコン基板の一部は、残りの酸化物間に露出され、前記シリコン基板内での活性トランジスタ要素ドーピングのステップのための準備ができている、ステップと
を含むプロセスによって作成される、半導体集積回路。 - 酸化物を前記酸化ライナを覆って堆積させるステップは、高密度プラズマ(HDP)酸化物を前記酸化ライナを覆って堆積させるステップを含む、請求項13に記載のプロセス。
- 前記DUO層を前記酸化物から除去するステップは、調整エッチングを行うことにより、前記DUO層を開放するステップと、短い選択的エッチングを前記DUO層にエッチングするステップとを含み、前記半導体ウエハは、酸化物エッチング装置内でエッチングされる、請求項13に記載のプロセス。
- 前記DUO層を前記酸化物から除去するステップは、複数の乾式プラズマエッチングのステップを含む、請求項13に記載のプロセス。
- 前記複数の乾式プラズマエッチングのステップは、酸化物に対して非選択的にエッチングするステップと、酸化物に対して部分的にエッチングするステップとを含む、請求項16に記載のプロセス。
- 前記酸化物に対して非選択的にエッチングするステップは、CF4、O2、およびArから成る群から選択されたガスを使用する、請求項17に記載のプロセス。
- 前記酸化物に対して部分的にエッチングするステップは、C5F8、O2、N2、およびArから成る群から選択されたガスを使用する、請求項17に記載のプロセス。
- 請求項13に記載のプロセスに従って処理された表面を有する半導体ウエハ。
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