KR101539827B1 - 위치 계측 장치, 노광 장치, 및 디바이스 제조 방법 - Google Patents

위치 계측 장치, 노광 장치, 및 디바이스 제조 방법 Download PDF

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KR101539827B1
KR101539827B1 KR1020120125240A KR20120125240A KR101539827B1 KR 101539827 B1 KR101539827 B1 KR 101539827B1 KR 1020120125240 A KR1020120125240 A KR 1020120125240A KR 20120125240 A KR20120125240 A KR 20120125240A KR 101539827 B1 KR101539827 B1 KR 101539827B1
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South Korea
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light
reference mark
measurement
wavelength band
detected
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English (en)
Korean (ko)
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KR20130054148A (ko
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노리토시 사카모토
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020120125240A 2011-11-15 2012-11-07 위치 계측 장치, 노광 장치, 및 디바이스 제조 방법 Active KR101539827B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011249560A JP5875335B2 (ja) 2011-11-15 2011-11-15 位置検出装置および露光装置
JPJP-P-2011-249560 2011-11-15

Publications (2)

Publication Number Publication Date
KR20130054148A KR20130054148A (ko) 2013-05-24
KR101539827B1 true KR101539827B1 (ko) 2015-08-06

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Country Status (3)

Country Link
US (1) US9400437B2 (enExample)
JP (1) JP5875335B2 (enExample)
KR (1) KR101539827B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103777476B (zh) * 2012-10-19 2016-01-27 上海微电子装备有限公司 一种离轴对准系统及对准方法
JP6304948B2 (ja) * 2013-06-19 2018-04-04 キヤノン株式会社 光源装置、およびリソグラフィ装置
CN103499296A (zh) * 2013-10-21 2014-01-08 东华大学 基于机器视觉的批量零件自动检测系统及方法
JP6590599B2 (ja) * 2014-11-28 2019-10-16 キヤノン株式会社 位置決定装置、位置決定方法、リソグラフィ装置、および物品の製造方法
JP6311639B2 (ja) * 2015-04-13 2018-04-18 東京エレクトロン株式会社 基板処理装置、基板処理装置の運転方法及び記憶媒体
JP6661303B2 (ja) * 2015-08-25 2020-03-11 キヤノン株式会社 位置検出装置、位置検出方法、露光装置及び露光方法
DE102017105697B4 (de) * 2017-03-16 2025-12-31 Ev Group E. Thallner Gmbh Verfahren und System zur Ausrichtung zweier gegenüberliegend angeordneter optischer Teilsysteme und Kamerachip
JP2020122930A (ja) * 2019-01-31 2020-08-13 キヤノン株式会社 計測装置、露光装置及び物品の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389976B1 (ko) * 1995-03-23 2004-05-27 가부시키가이샤 니콘 얼라인먼트방법및장치
JP2008147369A (ja) 2006-12-08 2008-06-26 Canon Inc 面位置計測装置及びそれを用いた露光装置

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* Cited by examiner, † Cited by third party
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JP2650396B2 (ja) 1989-02-07 1997-09-03 キヤノン株式会社 位置検出装置及び位置検出方法
JPH04321214A (ja) * 1991-04-19 1992-11-11 Canon Inc 位置検出装置
JP3104813B2 (ja) * 1992-04-09 2000-10-30 株式会社ニコン アライメント装置、投影露光装置、及び素子製造方法
US5995198A (en) * 1995-06-01 1999-11-30 Nikon Corporation Exposure apparatus
JPH1038514A (ja) * 1996-07-23 1998-02-13 Nikon Corp 位置検出装置
JP3445100B2 (ja) * 1997-06-02 2003-09-08 キヤノン株式会社 位置検出方法及び位置検出装置
JPH11251218A (ja) * 1998-03-02 1999-09-17 Nikon Corp 位置検出方法及び装置、並びに該装置を備えた露光装置
JP2001057326A (ja) * 1999-08-17 2001-02-27 Nikon Corp 位置計測方法、位置計測装置および露光装置並びに露光方法
JP2001267196A (ja) * 2000-03-14 2001-09-28 Nikon Corp 位置検出装置、位置検出方法、露光装置、及び露光方法
JP4616983B2 (ja) 2000-11-22 2011-01-19 キヤノン株式会社 位置検出装置、該検出装置を用いた投影露光装置及びデバイス製造方法
JP2002170757A (ja) * 2000-11-30 2002-06-14 Nikon Corp 位置計測方法及びその装置、露光方法及びその装置、デバイスの製造方法
JP2002184677A (ja) * 2000-12-18 2002-06-28 Nikon Corp 位置計測方法、位置計測装置および露光方法並びに露光装置
JP2003324058A (ja) * 2002-05-01 2003-11-14 Nikon Corp 位置検出装置、露光装置及び露光方法
US7411667B2 (en) 2005-06-03 2008-08-12 Asml Netherlands B.V. Method for correcting disturbances in a level sensor light path
JP5385652B2 (ja) * 2009-03-24 2014-01-08 キヤノン株式会社 位置検出装置、露光装置、位置検出方法、露光方法及びデバイス製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389976B1 (ko) * 1995-03-23 2004-05-27 가부시키가이샤 니콘 얼라인먼트방법및장치
JP2008147369A (ja) 2006-12-08 2008-06-26 Canon Inc 面位置計測装置及びそれを用いた露光装置

Also Published As

Publication number Publication date
US20130120733A1 (en) 2013-05-16
US9400437B2 (en) 2016-07-26
KR20130054148A (ko) 2013-05-24
JP5875335B2 (ja) 2016-03-02
JP2013105936A (ja) 2013-05-30

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