KR101517949B1 - Light emitting device package and its manufacturing method - Google Patents

Abstract

The present invention relates to a light emitting device package capable of improving the intensity of light and its manufacturing method. It may include a metal substrate; an insulating layer which surrounds the metal substrate; an Al reflection layer which is the light emitting device mounting part of the insulating layer; a first electrode layer installed on one side of the insulating layer; a second electrode layer installed on the other side of the insulating layer; and an UV light emitting device (20) which is mounted on the light emitting device mounting part and is electrically to the first electrode layer and the second electrode layer.

Description

TECHNICAL FIELD The present invention relates to a light emitting device package and a manufacturing method thereof,

The present invention relates to a light emitting device package and a manufacturing method thereof, and more particularly, to a light emitting device package for improving the light intensity and a method of manufacturing the same.

Light emitting diodes (LEDs) are semiconductor devices that can emit light of various wavelengths by forming a light emitting source through the formation of PN diodes of compound semiconductors. Such a light emitting device has a long lifetime, can be reduced in size and weight, has a strong directivity of light, and can be driven at a low voltage. Further, such an LED is resistant to impact and vibration, does not require preheating time and complicated driving, can be packaged in various forms, can be modularized for various purposes, and can be applied to various lighting devices and display devices.

However, in the conventional light emitting device package and light emitting device package manufacturing method, there is a problem that a part of the light emitted from the light emitting device package is absorbed in the package.

Disclosure of Invention Technical Problem [8] The present invention has been made to solve the above problems and it is an object of the present invention to provide a light emitting device package capable of improving the intensity of ultraviolet light (UV) And the purpose of providing it. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a metal substrate; An insulating layer covering the metal substrate; An aluminum reflective layer formed on the light emitting device seating portion of the insulating layer; A first electrode layer provided on one side of the insulating layer; A second electrode layer provided on the other side of the insulating layer; And a UV light emitting device 20 mounted on the light emitting device mounting part and electrically connected to the first electrode layer and the second electrode layer.

According to an aspect of the present invention, the metal substrate may include an aluminum component, and the insulating layer may be an aluminum oxide film.

According to an aspect of the present invention, the aluminum reflective layer may be formed in a circular or square shape around the rear surface of the light emitting device so as to reflect light generated from the light emitting device.

According to an aspect of the present invention, the aluminum reflective layer may be provided between the first electrode layer and the insulating layer so as to be electrically connected to the first electrode layer.

According to an aspect of the present invention, the aluminum reflective layer may include an electrode separating line formed at an intermediate portion thereof so as to be insulated from the second electrode layer, a first reflective layer disposed on one side of the electrode separating line, And may include a second reflective layer.

According to an aspect of the present invention, the first electrode layer is formed on the insulating layer so as to extend from one side of the front surface of the metal substrate to one side of the rear surface, and the second electrode layer is formed on the rear surface And may be formed on the insulating layer in a shape extending to the other side.

Further, according to the idea of the present invention, the metal substrate may be formed with at least two margin projections projecting laterally from the side surface by an allowance.

According to an aspect of the present invention, there is provided a light emitting device package including: a metal substrate; An insulating layer covering the metal substrate; A light emitting element mounted on the light emitting element seating portion of the insulating layer; A first electrode layer provided on one side of the insulating layer and electrically connected to the light emitting element; A two-electrode layer electrically connected to the light emitting element provided on the other side of the insulating layer; And a margin protruding laterally from the side surface of the metal substrate by an allowance length.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package, comprising: preparing a metal substrate strip of an aluminum material; Oxidizing the metal substrate strip to form an insulating layer on the metal substrate strip; Forming an aluminum reflective layer on the light emitting device seating portion of the insulating layer; Providing a first electrode layer on one side of the insulating layer and a second electrode layer on the other side of the insulating layer; And placing a light emitting element on the light emitting element seating portion.

A method of fabricating a light emitting device package according to an embodiment of the present invention includes cutting a metal substrate strip at a side of the metal substrate strip such that a margin protruding sideways from the side surface of the metal substrate by an allowance length is formed Step;

According to some embodiments of the present invention as described above, the intensity of light can be enhanced by using an aluminum reflective layer having a very high reflectivity of UV light. Of course, the scope of the present invention is not limited by these effects.

1 is a partially cutaway perspective view illustrating a light emitting device package according to some embodiments of the present invention.
2 is a cross-sectional view of a light emitting device package of FIG. 1 taken along line II-II.
3 is a plan view showing the light emitting device package of FIG.
4 is a plan view illustrating a light emitting device package according to some other embodiments of the present invention.
5 is a plan view illustrating a light emitting device package according to still another embodiment of the present invention.
6 to 11 are cross-sectional views illustrating steps of fabricating a light emitting device package according to some embodiments of the present invention.
12 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, in the figures the elements are turned over so that the elements depicted as being on the top surface of the other elements are oriented on the bottom surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a partially cutaway perspective view illustrating a light emitting device package 100 according to some embodiments of the present invention. 2 is a cross-sectional view showing the light emitting device package 100 of FIG. 1 taken along line II-II, and FIG. 3 is a plan view showing the light emitting device package 100 of FIG.

1 to 3, a light emitting device package 100 according to some embodiments of the present invention includes a metal substrate 10, an insulating layer 11, an aluminum reflective layer 12, A first electrode layer E1, a second electrode layer E2, and a UV light emitting element 20. [

The metal substrate 10 can receive the light emitting device 20 and is electrically insulated from the light emitting device 20 by the insulating layer 11. The metal substrate 10 is electrically connected to the light emitting device 20, And can be made of a material having appropriate mechanical strength so as to be able to support it.

For example, the metal substrate 10 may be a metal substrate such as aluminum, copper, zinc, tin, lead, gold, or silver that is excellent in thermal conductivity and can be insulated. Metal substrates in the form of a frame can be applied.

The metal substrate 10 may be a flexible printed circuit board (FPCB) made of a flexible material.

In addition, the metal substrate 10 may include a metal, partially synthetic resin such as resin, glass epoxy, etc., or a ceramic material in consideration of thermal conductivity. In order to improve workability, at least an EMC Epoxy Mold Compound), PI (polyimide), graphene, glass synthetic fiber, and combinations thereof.

In addition, the insulating layer 11 may be formed by oxidizing the metal substrate 10 as an insulator surrounding the metal substrate 10. When the metal substrate 10 includes aluminum in the metal, the insulating layer 11 may include alumina, which is aluminum oxide. Although various methods are available for such an oxidation method, the insulating layer 11 can be formed by oxidizing the surface aluminum component of the metal substrate 10 using an anodizing method. That is, the metal substrate 10 includes an aluminum component, and the insulating layer 11 may be an aluminum oxide film. At this time, the insulating layer 11 can be formed on the entire surface of the metal substrate 10, and the insulating layer 11 can be formed entirely on the entire surface of the metal substrate 10, except for the portion for fixing the metal substrate 10, 11) can be formed. In addition, the insulating layer 11 may be formed of silicon oxide, silicon nitride, or the like, and may be formed using a printing method such as a jet printing method.

1 to 3, the aluminum reflective layer 12 may be a reflective layer disposed in an area of at least 70 percent of the light-emitting device mount portion of the insulating layer 11. [

Here, the light emitting device mounting portion refers to the entire upper surface of the metal substrate 10 on which the UV light emitting device 20 is mounted.

Specifically, among metals, aluminum generally has a reflectance of about 85% or more including UV light, and thus belongs to a metal having a high reflectance. The reflectance of copper is about 59% and the reflectance of alumina is about 30%, which is lower than that of aluminum. The aluminum reflective layer 12 including aluminum having a relatively high reflectance is disposed on the insulating layer 11 and the insulating layer 11 having a relatively low reflectance and the first electrode layer E1 and second It may be advantageous to minimize the area of the electrode layer E2.

On the other hand, metal materials generally have a higher reflectivity to a longer wavelength than a shorter wavelength. Aluminum also has a higher reflectance for a longer wavelength than a shorter wavelength. However, when the horizontal axis is taken as an axis for increasing the wavelength and the vertical axis is used for a reflectivity, the slope of the graph is smaller than that of other general types. This means that the reflectivity of aluminum to short wavelengths is relatively high compared to the reflectivity of other metal materials.

Therefore, when the UV light emitting device 20 mainly emits light with a short wavelength, the aluminum substrate 10 includes aluminum and the aluminum reflective layer 12 is formed as described above, . In this case, the UV light emitting device 20 may include a UV LED capable of emitting light having a wavelength of 100 nm or more and 420 nm or less, which is a short wavelength.

Here, the UV light emitting device 20 may not necessarily emit only light having a short wavelength but also emit light having a long wavelength, but it may be advantageous to emit light having a wavelength of 100 nm or more and 420 nm or less.

The aluminum reflective layer 12 may be formed by a method such as hot pressing, plating, bonding, sputtering, etching, printing, or spraying.

1 and 3, the aluminum reflection layer 12 is formed on the upper surface of the UV light emitting device 20 (see FIG. 1) so as to reflect the light generated from the UV light emitting device 20, And the rear surface 20b of the base plate 20b.

2, the aluminum reflective layer 12 may be provided between the first electrode layer E1 and the insulating layer 11 so as to be electrically connected to the first electrode layer E1. have.

1 and 3, an electrode separation line S is formed at an intermediate portion of the aluminum reflection layer 12 so as to be insulated from the second electrode layer E2, and the electrode separation line S The first reflective layer 12-1 and the second reflective layer 12-2 may be disposed on one side and the other side, respectively.

The first reflective layer 12-1 of the aluminum reflective layer 12 is circular in shape partially cut by the electrode separation line S and the second reflective layer 12-2 of the aluminum reflective layer 12 has a circular shape, , And the remaining circular shape.

Here, the area of the aluminum reflective layer 12 may be at least 70% or more of the area of the light-emitting-device seating portion, and the electrode separation line S, the first electrode layer E1, and the second electrode layer E2 It may be advantageous to be provided in the widest area as much as possible.

The first reflective layer 12-1 may be electrically connected to the first electrode layer E1 and the second reflective layer 12-2 may be electrically connected to the second electrode layer E2. have. The first reflective layer 12-1 and the second reflective layer 12-2 of the aluminum reflective layer 12 may be insulated from each other by an electrode separation line S formed therebetween.

However, the shape of the aluminum reflective layer 12 of the light emitting device package 100 according to some embodiments of the present invention is not necessarily limited to Figs.

4 is a plan view illustrating a light emitting device package 200 according to some other embodiments of the present invention.

4, the aluminum reflective layer 12 of the light emitting device package 200 according to some other embodiments of the present invention may be formed by the above-described first reflective layer 12, The first reflective layer 12-1 and the second reflective layer 12-2 may be integrated into a single circular shape.

5 is a plan view illustrating a light emitting device package 300 according to still another embodiment of the present invention.

5, the aluminum reflective layer 12 of the light emitting device package 300 according to some embodiments of the present invention includes a first reflective layer 12 having a generally rectangular shape with respect to the electrode separation line S -1) and a second reflective layer 12-2 which is generally rectangular in shape.

In addition, the shape of the aluminum reflective layer 12 may be various, such as circular, square, elliptical, polygonal, hybrid, and various geometric shapes. The shape of the electrode separation line S may also be a curved Or a folded shape, a waveform, or the like.

1 to 3, the first electrode layer E1 is provided on one side of the insulating layer 11, and the second electrode layer E2 is formed on one side of the insulating layer 11, The first electrode layer E1 is formed on the insulating layer 11 to extend from one side of the front surface 10a of the metal substrate 10 to one side of the rear surface 10b, The two-electrode layer E2 may be formed on the insulating layer 11 to extend from the other side of the front surface 10a of the metal substrate 10 to the other side of the rear surface 10b.

Here, the first electrode layer E1 and the second electrode layer E2 may be provided in the form of a wiring layer of a conductive layer pattern. The wiring layer may be made of at least one selected from copper, aluminum, and combinations thereof, which are excellent in thermal conductivity and relatively inexpensive materials.

At this time, such a pattern forming method may be thermocompression processing, plating processing, adhesive processing, sputtering processing, other etching processing, printing processing, spray processing and the like.

1 to 5, the UV light emitting device 20 is mounted on the light emitting device mounting part, and the first electrode layer E1 and the second electrode layer E2, And may be a UV LED emitting a UV light including a wavelength of 100 nm or more and 420 nm or less.

Here, the UV light emitting device 20 may include a first electrode pad P1 and a second electrode pad P2 to which a wire W can be connected to the front surface 20a, 20b may be provided with an insulating bonding medium.

The UV light emitting device 20 may be a horizontal or vertical type or a flip chip shape in which a wire W is unnecessary. The UV light emitting device 20 may include signal transmission media such as various bumps and solders, and various types of light emitting devices may be used.

1, the UV light emitting device 20 may be mounted on the metal substrate 10, and one UV light emitting device 20 may be placed on the metal substrate 10 A plurality of the UV light emitting devices 20 may be mounted on the metal substrate 10.

The UV light emitting device 20 may be made of a semiconductor. For example, LEDs of ultraviolet light emission made of a nitride semiconductor can be applied. The nitride semiconductor can be represented by a general formula Al _x Ga _y In _z N (0? X? 1, 0? Y? 1, 0? Z? 1, x + y + z = 1).

The UV light emitting device 20 can be formed by a vapor phase growth method such as MOCVD or the like using a nitride such as InN, AlN, InGaN, AlGaN, InGaAlN, or the like on a sapphire substrate for growth or a silicon carbide substrate The semiconductor can be epitaxially grown. The light emitting device 20 may be formed using semiconductors such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, and AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor including a multiple quantum well structure or a single quantum well structure or a laminated semiconductor of a double hetero structure. In addition, the light emitting device 20 can be selected to have an arbitrary wavelength depending on the application such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another support substrate may be used for removing the growth substrate, and the support substrate may be bonded to the opposite side of the growth substrate by using a reflective metal in order to improve the light efficiency of the LED chip, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

Since the external quantum efficiency of the light emitting device is lowered by absorbing the light generated from the GaN-based semiconductor, the Si substrate may be formed of Si, Ge, SiAl, ceramic, Or a support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

Here, the buffer layer may be made of Al _x In _y Ga _1-xy N (0? X? 1, 0? _Y? 1, x + y? 1), in particular GaN, AlN, AlGaN, InGaN or InGaNAlN. Materials such as ZrB2, HfB2, ZrN, HfN and TiN can also be used as needed. Further, a plurality of layers may be combined, or the composition may be gradually changed.

3, when the metal substrate 10 is cut into the individual metal substrate 10 in the substrate strip SS, the metal substrate 10 is provided on the side of the substrate strip SS so as to prevent crack propagation of the insulating layer 11. [ The clearance protrusion 30 protruding by a margin length L1 from the side surface can be formed.

Therefore, when the cutting equipment cuts the substrate strip SS along the cutting lines C1 and C2, even if a crack is generated in a part of the insulating layer 11, 30, it is possible to prevent defects such as short-circuiting from being propagated to the insulating layer 11 on the metal substrate 10.

On the other hand, as shown in FIG. 11, the phosphor 40 may be provided around the UV light emitting device 20. For example, the phosphor 40 may have the following composition formula and color.

Oxide system: yellow and green Y3Al5O12: Ce, Tb3Al5O12: Ce, Lu3Al5O12: Ce

(Ba, Sr) 2SiO4: Eu, yellow and orange (Ba, Sr) 3SiO5: Ce

Eu, Sr2Si5N8: Eu, SrSiAl4N7: Eu, Eu3O3: Eu, Eu3O3: Eu,

The composition of the phosphor 40 should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

Materials such as a quantum dot may be used as a substitute for the phosphor 40, and the phosphor 40 and the QD may be mixed with each other or used alone.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

The coating method of the fluorescent material 40 or the quantum dot may be at least one of a method of being applied to an LED chip or a light emitting element, a method of covering a film form, a method of attaching a sheet form of a film or a ceramic fluorescent substance, Can be used.

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the UV light emitting device 20 or the LED chip in a film form can be applied by a method of electrophoresis, screen printing, or phosphor molding. .

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the coating technique of the phosphor 40 plays a great role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

Also, as shown in FIGS. 2 and 11, a lens 50 may be installed around the UV light emitting device 20.

The lens 50 guides the path of the UV light generated from the UV light emitting device 20 and is made of glass, an epoxy resin composition, a silicone resin composition, a modified epoxy resin such as a silicone modified epoxy resin Modified polyimide resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, A resin, a phenol resin, an acrylic resin, a PBT resin, and the like can be applied.

In addition, although not shown, various types of components such as various reflective members, light-transmitting encapsulant, and opaque encapsulant may be installed around the UV light emitting element 20.

The light emitting device package according to some embodiments of the present invention includes a metal substrate 10, an insulating layer 11 surrounding the metal substrate 10, A first electrode layer E1 disposed on one side of the insulating layer 11 and electrically connected to the UV light emitting device 20; a second electrode layer E1 electrically connected to the UV light emitting device 20; A second electrode layer E2 electrically connected to the UV light emitting element 20 provided on the other side of the insulating layer 11 and a second electrode layer E2 provided on the side of the metal substrate 10, (30) protruding sideways by an allowance length (L1) from the side surface of the metal substrate (10) so as to prevent cracking of the insulating layer (11) when the metal substrate (10) ). Here, the metal substrate 10, the insulating layer 11, the UV light emitting device 20, the first electrode layer E1, the second electrode layer E2, (30) may have the same configuration and the same role as those described in Figs. 1 to 5. Therefore, detailed description is omitted. Therefore, the light emitting device package according to still another embodiment of the present invention does not necessarily include the aluminum reflective layer 12 described above.

6 to 11 are cross-sectional views illustrating steps of fabricating the light emitting device package 100 according to some embodiments of the present invention.

Referring to FIGS. 6 to 11, first, as shown in FIG. 6, a metal substrate strip SS of aluminum material in which individual metal substrates 10 are connected to each other can be prepared.

In this case, the metal substrate strip SS may be a matrix in which a plurality of metal substrates 10 are connected to each other by bridges or the like formed on a side surface of the metal substrate strips SS.

7, the metal substrate strip SS may be oxidized to form the alumina insulating layer 11 of aluminum oxide so that the insulating layer 11 is formed on the metal substrate strip SS .

Next, as shown in FIG. 8, an aluminum reflective layer 12 may be formed on the light emitting device seating portion of the insulating layer 11. [

Here, the aluminum reflective layer 12 can be provided on the insulating layer 11 by a method such as thermocompression bonding, plating, bonding, sputtering, etching, printing, or spraying.

9, a first electrode layer E1 may be provided on one side of the insulating layer 11, and a second electrode layer E2 may be provided on the other side of the insulating layer 11. As shown in FIG.

Here, the first electrode layer E1 and the second electrode layer E2 may also be formed by a thermal compression process, a plating process, an adhesive process, a sputtering process, another etching process, a printing process, a spray process, 11).

10, a UV light emitting device 20 is mounted on the light emitting device mounting part using a die bonding device or a wiring device, and the UV light emitting device 20 is mounted on the light emitting device mounting part, Or various kinds of signal transmission media such as wire W may be installed in the light source 40. The fluorescent material 40 may be provided or the lens 50 or other reflective member and sealing material may be additionally provided.

11, the side of the metal substrate strip SS is sideways by an allowance length L1 from the side surface of the metal substrate 10 so as to prevent cracking of the insulating layer 11, The metal substrate strip SS can be cut with a cutting equipment so that the protruding margin protrusion 30 can be formed.

12 is a flowchart showing a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention.

6-12, a method of fabricating a light emitting device package 100 according to some embodiments of the present invention includes forming a metal substrate strip (SS) of aluminum material in which individual metal substrates 10 are connected to each other, (S2) of oxidizing the metal substrate strip (SS) so that an insulating layer (11) is formed on the metal substrate strip (SS) And a second electrode layer E1 is provided on one side of the insulating layer 11 and a second electrode layer E2 is provided on the other side of the insulating layer 11, (S5) for mounting a UV light emitting device on the light emitting device mounting part (S5); and a step (S5) for mounting an electrode layer (E2) on the metal substrate strip (L1) from the side of the metal substrate (10) on the side of the substrate (SS). (S6) cutting the metal substrate strip (SS) so that the protrusion (30) can be formed.

The step S3 of installing the aluminum reflective layer 12 on the light emitting device seating portion of the insulating layer 11 may include providing a first electrode layer E1 on one side of the insulating layer 11, (S4) of providing the second electrode layer (E2) on the other side of the first electrode layer (11).

Meanwhile, although not shown, a backlight unit having a light emitting device package 100 according to some embodiments of the present invention may further include a light guide plate in addition to the above-described configurations.

The backlight unit is installed on the LCD panel and projects light toward the LCD panel. The backlight unit is installed in a path of light generated from the UV light emitting device 20, 20 can be transmitted over a wider area.

Although not shown, the light guide plate may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like In addition, materials of various translucent resin series can be applied. The light guide plate 50 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

The backlight unit according to some embodiments of the present invention may be a direct-type backlight unit in which the UV light emitting device 20 is installed below the light guide plate, or the UV light emitting device 20 may be a direct- Or an edge-type backlight unit provided at the side of the display unit.

Although not shown, the light emitting device package 100 according to an exemplary embodiment of the present invention may include various devices or technologies that can use UV light such as a UV curing device and a UV sterilizing device, Can be used in the field.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: metal substrate
10a, 20a: Front
10b, 20b: rear surface
11: Insulating layer
12: aluminum reflective layer
E1: first electrode layer
E2: Second electrode layer
20: Light emitting element
P1: first electrode pad
P2: second electrode pad
W: Wire
S: electrode separator
12-1: First reflective layer
12-2: Second reflective layer
SS: substrate strip
L1: Clearance length
30: Leaf projection
40: phosphor
50: lens
100, 200, 300: light emitting device package

Claims (11)

A metal substrate;
An insulating layer covering the metal substrate;
An aluminum reflective layer formed on the light emitting device seating portion of the insulating layer;
A first electrode layer provided on one side of the insulating layer;
A second electrode layer provided on the other side of the insulating layer; And
A light emitting element mounted on the light emitting element seating portion and electrically connected to the first electrode layer and the second electrode layer;
Lt; / RTI >
Wherein the aluminum reflective layer is disposed between the first electrode layer and the insulating layer so as to be electrically connected to the first electrode layer. The method according to claim 1,
Wherein the metal substrate comprises an aluminum component, and the insulating layer is an aluminum oxide film formed on the metal substrate. The method according to claim 1,
Wherein the aluminum reflective layer is formed in a circular or square shape as a whole around the rear surface of the light emitting device so as to reflect light generated from the light emitting device. delete The method according to claim 1,
Wherein the aluminum reflective layer includes a first reflective layer disposed on one side of the electrode separation line and a second reflective layer disposed on the other side of the second reflective layer, the electrode separation line being formed at an intermediate portion thereof to be insulated from the second electrode layer, A light emitting device package. The method according to claim 1,
Wherein the first electrode layer is formed on the insulating layer so as to extend from one side of the front surface of the metal substrate to one side of the rear surface,
And the second electrode layer is formed on the insulating layer in a shape extending from the other side of the front surface of the metal substrate to the other side of the rear surface. The method according to claim 1,
Wherein the metal substrate has at least two margin projections which are laterally protruded from the side surface by an allowance length. The method according to any one of claims 1 to 3, 5 to 7,
Wherein the light emitting element is a UV light emitting element. Preparing a metal substrate strip of aluminum material;
Oxidizing the metal substrate strip to form an insulating layer on the metal substrate strip;
Forming an aluminum reflective layer on the light emitting device seating portion of the insulating layer;
Providing a first electrode layer on one side of the insulating layer and a second electrode layer on the other side of the insulating layer; And
Placing a UV light emitting element on the light emitting element seating portion;
Lt; / RTI >
Wherein the aluminum reflective layer is disposed between the first electrode layer and the insulating layer so as to be electrically connected to the first electrode layer. Preparing a metal substrate strip of aluminum material;
Oxidizing the metal substrate strip to form an insulating layer on the metal substrate strip;
Providing a first electrode layer on one side of the insulating layer and a second electrode layer on the other side of the insulating layer;
Forming an aluminum reflective layer on the light emitting device seating portion of the insulating layer; And
Placing a UV light emitting element on the light emitting element seating portion;
Lt; / RTI >
Wherein the aluminum reflective layer is disposed between the first electrode layer and the insulating layer so as to be electrically connected to the first electrode layer. 11. The method according to claim 9 or 10,
Cutting the metal substrate strip so that a margin protruding sideways from the side surface of the metal substrate by an allowance length can be formed on the side of the metal substrate strip;
Emitting device package.

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