KR101490117B1 - 기판 세정 챔버 그리고 세정 및 컨디셔닝 방법 - Google Patents

기판 세정 챔버 그리고 세정 및 컨디셔닝 방법 Download PDF

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Publication number
KR101490117B1
KR101490117B1 KR1020097025556A KR20097025556A KR101490117B1 KR 101490117 B1 KR101490117 B1 KR 101490117B1 KR 1020097025556 A KR1020097025556 A KR 1020097025556A KR 20097025556 A KR20097025556 A KR 20097025556A KR 101490117 B1 KR101490117 B1 KR 101490117B1
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South Korea
Prior art keywords
substrate
cleaning chamber
support
cleaning
chamber
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KR1020097025556A
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Korean (ko)
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KR20100017700A (ko
Inventor
비네트 에이치. 메타
칼 엠. 브라운
존 에이. 피피톤
다니엘 제이. 호프만
스티븐 씨. 샤논
케이쓰 에이. 밀러
비자이 디. 파크히
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20100017700A publication Critical patent/KR20100017700A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020097025556A 2007-05-08 2008-05-02 기판 세정 챔버 그리고 세정 및 컨디셔닝 방법 Active KR101490117B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/745,451 2007-05-08
US11/745,451 US8435379B2 (en) 2007-05-08 2007-05-08 Substrate cleaning chamber and cleaning and conditioning methods
PCT/US2008/062541 WO2008140982A1 (en) 2007-05-08 2008-05-02 Substrate cleaning chamber and cleaning and conditioning methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127016110A Division KR101466584B1 (ko) 2007-05-08 2008-05-02 하나 또는 둘 이상의 기판으로부터 물질을 제거하는 프로세스

Publications (2)

Publication Number Publication Date
KR20100017700A KR20100017700A (ko) 2010-02-16
KR101490117B1 true KR101490117B1 (ko) 2015-02-05

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020097025556A Active KR101490117B1 (ko) 2007-05-08 2008-05-02 기판 세정 챔버 그리고 세정 및 컨디셔닝 방법
KR1020127016110A Active KR101466584B1 (ko) 2007-05-08 2008-05-02 하나 또는 둘 이상의 기판으로부터 물질을 제거하는 프로세스

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020127016110A Active KR101466584B1 (ko) 2007-05-08 2008-05-02 하나 또는 둘 이상의 기판으로부터 물질을 제거하는 프로세스

Country Status (6)

Country Link
US (2) US8435379B2 (https=)
JP (2) JP5427171B2 (https=)
KR (2) KR101490117B1 (https=)
CN (2) CN102755976B (https=)
TW (2) TWI433215B (https=)
WO (1) WO2008140982A1 (https=)

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Also Published As

Publication number Publication date
KR101466584B1 (ko) 2014-12-01
JP2010527152A (ja) 2010-08-05
TWI433215B (zh) 2014-04-01
TW201243924A (en) 2012-11-01
JP5437445B2 (ja) 2014-03-12
KR20100017700A (ko) 2010-02-16
CN102755976A (zh) 2012-10-31
CN101680105B (zh) 2016-02-24
JP2012182496A (ja) 2012-09-20
US8435379B2 (en) 2013-05-07
US20080276958A1 (en) 2008-11-13
TWI544530B (zh) 2016-08-01
KR20120090098A (ko) 2012-08-16
CN101680105A (zh) 2010-03-24
JP5427171B2 (ja) 2014-02-26
TW200903600A (en) 2009-01-16
CN102755976B (zh) 2016-05-18
US20130192629A1 (en) 2013-08-01
WO2008140982A1 (en) 2008-11-20

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