KR101488036B1 - 화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법 - Google Patents

화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법 Download PDF

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KR101488036B1
KR101488036B1 KR1020097019723A KR20097019723A KR101488036B1 KR 101488036 B1 KR101488036 B1 KR 101488036B1 KR 1020097019723 A KR1020097019723 A KR 1020097019723A KR 20097019723 A KR20097019723 A KR 20097019723A KR 101488036 B1 KR101488036 B1 KR 101488036B1
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capacitance
reading
image sensor
charge
resultant
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KR20090121356A (ko
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존 토마스 컴프턴
로버트 마이클 가이다쉬
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020097019723A 2007-03-21 2008-03-19 화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법 Active KR101488036B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/689,072 US7674648B2 (en) 2007-03-21 2007-03-21 Extended dynamic range using variable sensitivity pixels
US11/689,072 2007-03-21
PCT/US2008/003552 WO2008115500A2 (en) 2007-03-21 2008-03-19 Extended dynamic range using variable sensitivity pixels

Publications (2)

Publication Number Publication Date
KR20090121356A KR20090121356A (ko) 2009-11-25
KR101488036B1 true KR101488036B1 (ko) 2015-01-29

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KR1020097019723A Active KR101488036B1 (ko) 2007-03-21 2008-03-19 화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법

Country Status (7)

Country Link
US (1) US7674648B2 (enExample)
EP (1) EP2123019B1 (enExample)
JP (1) JP5190074B2 (enExample)
KR (1) KR101488036B1 (enExample)
CN (1) CN101690157B (enExample)
TW (1) TWI430657B (enExample)
WO (1) WO2008115500A2 (enExample)

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JP5915031B2 (ja) * 2011-08-31 2016-05-11 ソニー株式会社 撮像装置および撮像方法、並びに電子機器
US9167182B2 (en) * 2011-09-26 2015-10-20 Semiconductor Components Industries, Llc Charge sensing in image sensors with output channel having multiple-gain output paths
FR2984608A1 (fr) 2011-12-19 2013-06-21 St Microelectronics Sa Procede de capture d'image au moyen d'un capteur d'image
US9407795B2 (en) 2012-07-13 2016-08-02 Teledyne Dalsa B.V. Method of reading out a CMOS image sensor and a CMOS image sensor configured for carrying out such method
US10154211B2 (en) * 2014-11-20 2018-12-11 Teledyne Dalsa B.V. Circuit controller for controlling a pixel circuit and a method of controlling a pixel circuit
JP5897752B1 (ja) * 2015-05-14 2016-03-30 ブリルニクスジャパン株式会社 固体撮像装置およびその駆動方法、電子機器
FR3039928B1 (fr) * 2015-08-03 2019-06-07 Teledyne E2V Semiconductors Sas Procede de commande d'un capteur d'image a pixels actifs
CN105681692B (zh) * 2016-01-11 2018-10-30 珠海艾思克科技有限公司 Cmos图像传感器及其复位噪声评估方法
WO2017124058A1 (en) * 2016-01-15 2017-07-20 Invisage Technologies, Inc. Image sensors having extended dynamic range
JP6975908B2 (ja) * 2017-02-28 2021-12-01 パナソニックＩｐマネジメント株式会社 撮像システム及び撮像方法
JP7246863B2 (ja) * 2018-04-20 2023-03-28 ソニーセミコンダクタソリューションズ株式会社 受光装置、車両制御システム及び測距装置
JP7134781B2 (ja) 2018-08-17 2022-09-12 キヤノン株式会社 光電変換装置及び撮像システム
JP7329963B2 (ja) * 2019-05-17 2023-08-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US12335641B2 (en) 2022-09-14 2025-06-17 Apple Inc. Image sensor with high dynamic range and low noise
US12342091B2 (en) 2022-09-15 2025-06-24 Apple Inc. Image sensor with stacked pixels having high dynamic range and low noise
US12279055B2 (en) 2022-09-18 2025-04-15 Apple Inc. Image sensor with stacked pixels including charge sharing gates
US12495227B2 (en) 2023-07-16 2025-12-09 Apple Inc. Four-transistor pixel with charge sharing

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US20060274176A1 (en) * 2005-06-01 2006-12-07 Eastman Kodak Company CMOS image sensor pixel with selectable binning and conversion gain

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KR20060024796A (ko) * 2003-06-11 2006-03-17 마이크론 테크놀로지, 인크 듀얼 변환 이득 이미저
US20060274176A1 (en) * 2005-06-01 2006-12-07 Eastman Kodak Company CMOS image sensor pixel with selectable binning and conversion gain

Also Published As

Publication number Publication date
WO2008115500A3 (en) 2009-01-15
CN101690157B (zh) 2015-04-01
TWI430657B (zh) 2014-03-11
JP2010522479A (ja) 2010-07-01
CN101690157A (zh) 2010-03-31
US20080231727A1 (en) 2008-09-25
JP5190074B2 (ja) 2013-04-24
WO2008115500A2 (en) 2008-09-25
US7674648B2 (en) 2010-03-09
EP2123019B1 (en) 2019-09-25
KR20090121356A (ko) 2009-11-25
EP2123019A2 (en) 2009-11-25
TW200904165A (en) 2009-01-16

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