KR101488036B1 - 화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법 - Google Patents

화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법 Download PDF

Info

Publication number
KR101488036B1
KR101488036B1 KR1020097019723A KR20097019723A KR101488036B1 KR 101488036 B1 KR101488036 B1 KR 101488036B1 KR 1020097019723 A KR1020097019723 A KR 1020097019723A KR 20097019723 A KR20097019723 A KR 20097019723A KR 101488036 B1 KR101488036 B1 KR 101488036B1
Authority
KR
South Korea
Prior art keywords
capacitance
reading
image sensor
charge
resultant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097019723A
Other languages
English (en)
Korean (ko)
Other versions
KR20090121356A (ko
Inventor
존 토마스 컴프턴
로버트 마이클 가이다쉬
Original Assignee
옴니비전 테크놀러지즈 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 옴니비전 테크놀러지즈 인코포레이티드 filed Critical 옴니비전 테크놀러지즈 인코포레이티드
Publication of KR20090121356A publication Critical patent/KR20090121356A/ko
Application granted granted Critical
Publication of KR101488036B1 publication Critical patent/KR101488036B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020097019723A 2007-03-21 2008-03-19 화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법 Active KR101488036B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/689,072 US7674648B2 (en) 2007-03-21 2007-03-21 Extended dynamic range using variable sensitivity pixels
US11/689,072 2007-03-21
PCT/US2008/003552 WO2008115500A2 (en) 2007-03-21 2008-03-19 Extended dynamic range using variable sensitivity pixels

Publications (2)

Publication Number Publication Date
KR20090121356A KR20090121356A (ko) 2009-11-25
KR101488036B1 true KR101488036B1 (ko) 2015-01-29

Family

ID=39523595

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097019723A Active KR101488036B1 (ko) 2007-03-21 2008-03-19 화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법

Country Status (7)

Country Link
US (1) US7674648B2 (enExample)
EP (1) EP2123019B1 (enExample)
JP (1) JP5190074B2 (enExample)
KR (1) KR101488036B1 (enExample)
CN (1) CN101690157B (enExample)
TW (1) TWI430657B (enExample)
WO (1) WO2008115500A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090050252A (ko) * 2007-11-15 2009-05-20 삼성전자주식회사 이미지 센서
US8299839B2 (en) * 2009-01-12 2012-10-30 Oracle America, Inc. Capacitively and conductively coupled multiplexer
GB2474014B (en) * 2009-09-24 2015-04-15 Selex Es Ltd IR detection system and method
US20110074996A1 (en) * 2009-09-29 2011-03-31 Shen Wang Ccd image sensors with variable output gains in an output circuit
JP5915031B2 (ja) * 2011-08-31 2016-05-11 ソニー株式会社 撮像装置および撮像方法、並びに電子機器
US9167182B2 (en) * 2011-09-26 2015-10-20 Semiconductor Components Industries, Llc Charge sensing in image sensors with output channel having multiple-gain output paths
FR2984608A1 (fr) * 2011-12-19 2013-06-21 St Microelectronics Sa Procede de capture d'image au moyen d'un capteur d'image
WO2014008946A1 (en) * 2012-07-13 2014-01-16 Teledyne Dalsa B.V. Method of reading out a cmos image sensor and a cmos image sensor configured for carrying out such method
US10154211B2 (en) * 2014-11-20 2018-12-11 Teledyne Dalsa B.V. Circuit controller for controlling a pixel circuit and a method of controlling a pixel circuit
JP5897752B1 (ja) * 2015-05-14 2016-03-30 ブリルニクスジャパン株式会社 固体撮像装置およびその駆動方法、電子機器
FR3039928B1 (fr) * 2015-08-03 2019-06-07 Teledyne E2V Semiconductors Sas Procede de commande d'un capteur d'image a pixels actifs
CN105681692B (zh) * 2016-01-11 2018-10-30 珠海艾思克科技有限公司 Cmos图像传感器及其复位噪声评估方法
CN108476297B (zh) * 2016-01-15 2020-10-09 因维萨热技术公司 具有扩展的动态范围的图像传感器
WO2018159002A1 (ja) * 2017-02-28 2018-09-07 パナソニックＩｐマネジメント株式会社 撮像システム及び撮像方法
JP7246863B2 (ja) * 2018-04-20 2023-03-28 ソニーセミコンダクタソリューションズ株式会社 受光装置、車両制御システム及び測距装置
JP7134781B2 (ja) 2018-08-17 2022-09-12 キヤノン株式会社 光電変換装置及び撮像システム
JP7329963B2 (ja) * 2019-05-17 2023-08-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US12335641B2 (en) 2022-09-14 2025-06-17 Apple Inc. Image sensor with high dynamic range and low noise
US12342091B2 (en) 2022-09-15 2025-06-24 Apple Inc. Image sensor with stacked pixels having high dynamic range and low noise
US12279055B2 (en) 2022-09-18 2025-04-15 Apple Inc. Image sensor with stacked pixels including charge sharing gates
US12495227B2 (en) 2023-07-16 2025-12-09 Apple Inc. Four-transistor pixel with charge sharing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000165754A (ja) * 1998-11-27 2000-06-16 Canon Inc 固体撮像装置および固体撮像装置の信号読出し方法
KR20060024796A (ko) * 2003-06-11 2006-03-17 마이크론 테크놀로지, 인크 듀얼 변환 이득 이미저
US20060274176A1 (en) * 2005-06-01 2006-12-07 Eastman Kodak Company CMOS image sensor pixel with selectable binning and conversion gain

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6353968A (ja) * 1986-08-22 1988-03-08 Nikon Corp イメ−ジセンサ
US6040570A (en) 1998-05-29 2000-03-21 Sarnoff Corporation Extended dynamic range image sensor system
US6410899B1 (en) * 1998-06-17 2002-06-25 Foveon, Inc. Active pixel sensor with bootstrap amplification and reduced leakage during readout
US6639261B2 (en) * 1998-12-08 2003-10-28 Micron Technology, Inc. Method for forming a low leakage contact in a CMOS imager
US6204524B1 (en) * 1999-07-14 2001-03-20 Micron Technology, Inc. CMOS imager with storage capacitor
US6486504B1 (en) * 1999-10-26 2002-11-26 Eastman Kodak Company CMOS image sensor with extended dynamic range
US7352454B2 (en) * 2000-11-09 2008-04-01 Canesta, Inc. Methods and devices for improved charge management for three-dimensional and color sensing
US6730897B2 (en) 2000-12-29 2004-05-04 Eastman Kodak Company Linearity and dynamic range for complementary metal oxide semiconductor active pixel image sensors
US7224389B2 (en) * 2001-07-16 2007-05-29 Cypress Semiconductor Corporation (Belgium) Bvba Method to adjust the signal level of an active pixel and corresponding active pixel
JP3984814B2 (ja) 2001-10-29 2007-10-03 キヤノン株式会社 撮像素子、その撮像素子を用いた放射線撮像装置及びそれを用いた放射線撮像システム
JP4502278B2 (ja) * 2004-02-27 2010-07-14 国立大学法人東北大学 固体撮像装置、ラインセンサ、光センサおよび固体撮像装置の動作方法
US7091531B2 (en) * 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier
JP4317115B2 (ja) * 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP5019705B2 (ja) * 2004-11-17 2012-09-05 ソニー株式会社 固体撮像装置及び固体撮像装置の駆動方法
US7446807B2 (en) * 2004-12-03 2008-11-04 Micron Technology, Inc. Imager pixel with capacitance for boosting reset voltage
US8508638B2 (en) * 2005-03-14 2013-08-13 Intellectual Ventures Ii Llc 3T pixel for CMOS image sensors with low reset noise and low dark current generation utilizing parametric reset
US7468501B2 (en) 2005-05-12 2008-12-23 California Institute Of Technology Linear dynamic range enhancement in a CMOS imager
JP4844032B2 (ja) * 2005-07-21 2011-12-21 株式会社ニコン 撮像装置
US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000165754A (ja) * 1998-11-27 2000-06-16 Canon Inc 固体撮像装置および固体撮像装置の信号読出し方法
KR20060024796A (ko) * 2003-06-11 2006-03-17 마이크론 테크놀로지, 인크 듀얼 변환 이득 이미저
US20060274176A1 (en) * 2005-06-01 2006-12-07 Eastman Kodak Company CMOS image sensor pixel with selectable binning and conversion gain

Also Published As

Publication number Publication date
EP2123019B1 (en) 2019-09-25
KR20090121356A (ko) 2009-11-25
JP2010522479A (ja) 2010-07-01
CN101690157A (zh) 2010-03-31
US7674648B2 (en) 2010-03-09
TW200904165A (en) 2009-01-16
WO2008115500A3 (en) 2009-01-15
WO2008115500A2 (en) 2008-09-25
JP5190074B2 (ja) 2013-04-24
TWI430657B (zh) 2014-03-11
US20080231727A1 (en) 2008-09-25
CN101690157B (zh) 2015-04-01
EP2123019A2 (en) 2009-11-25

Similar Documents

Publication Publication Date Title
KR101488036B1 (ko) 화상 센서 판독 방법 및 디지털 카메라의 화상 센서 판독 방법
US20230379597A1 (en) Solid-state image sensor and image-capturing device
JP5173171B2 (ja) 光電変換装置、撮像装置及び信号読出方法
JP4374115B2 (ja) アクティブピクセルセンサ
EP1271930B1 (en) Image sensing apparatus capable of outputting image with converted resolution, its control method, and image sensing system
US6710804B1 (en) CMOS active pixel image sensor with extended dynamic range and sensitivity
CN100409671C (zh) 固态摄像装置
KR102538715B1 (ko) 고체 촬상 장치, 그 구동 방법 및 전자 기기
EP1207686A1 (en) Solid state imaging device
JP2000059688A (ja) 光電変換装置
JP3890207B2 (ja) 撮像装置および撮像システム
JP2004297546A (ja) 撮像装置
KR20190091357A (ko) 이미징 애플리케이션을 위한 확장된 높은 동적 범위 직접 주입 회로
JP2005332880A (ja) 撮像素子および画像入力処理装置
KR20090102126A (ko) Ｃｍｏｓ 영상 센서 및 그 동작 방법
EP1943831B1 (en) Image sensor
EP3420592B1 (en) Improved ultra-high dynamic range pixel architecture
JP2017028416A (ja) 撮像素子
JP2002354195A (ja) 信号処理回路および固体撮像装置
US7132638B2 (en) CCD imaging array with improved charge sensing circuit
JP2001103379A (ja) 固体撮像装置
US7718945B2 (en) Solid state imaging device including photodetecting section, row selecting section for changing the electric charge accumulating time of each row, and signal processing section
JP2004112438A (ja) 固体撮像装置
JP3421096B2 (ja) 固体撮像装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20171228

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20181227

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 12