JP5190074B2 - 可変感度画素を用いたダイナミックレンジの拡大 - Google Patents
可変感度画素を用いたダイナミックレンジの拡大 Download PDFInfo
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- JP5190074B2 JP5190074B2 JP2009554554A JP2009554554A JP5190074B2 JP 5190074 B2 JP5190074 B2 JP 5190074B2 JP 2009554554 A JP2009554554 A JP 2009554554A JP 2009554554 A JP2009554554 A JP 2009554554A JP 5190074 B2 JP5190074 B2 JP 5190074B2
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- 230000035945 sensitivity Effects 0.000 title description 2
- 239000003990 capacitor Substances 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 57
- 230000008859 change Effects 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 230000002596 correlated effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (3)
- イメージセンサを読み出す方法であって、
(a)非線形容量を有する電圧変換部を第一の容量として、そこに蓄積される電荷をリセットし、結果として得られる第一のリセット信号を保持するステップと、
(b)前記電圧変換部を第二の容量に変換し、そこに蓄積される電荷をリセットし、結果として得られる第二のリセット信号を保持するステップと、
(c)第一の時点で、電荷を感光領域から前記第二の容量を有する前記電圧変換部に転送し、結果として得られる第一の信号を保持するステップと、
(d)前記電圧変換部を前記第二の容量から前記第一の容量に変換するステップと、
(e)第二の時点で、電荷を前記感光領域から前記第一の容量を有する前記電圧変換部に転送し、結果として得られる第二の信号を保持するステップと、
を含むことを特徴とする方法。 - イメージセンサを読み出す方法であって、
(a)感光領域を第一の容量として、そこに蓄積される電荷をリセットし、結果として得られる第一のリセット信号を保持するステップと、
(b)前記感光領域を第二の容量に変換し、そこに蓄積される電荷をリセットし、結果として得られる第二のリセット信号を保持するステップと、
(c)第一の時点で、電荷を前記感光領域に蓄積し、結果として得られる第一の信号を保持するステップと、
(d)前記感光領域を前記第二の容量から前記第一の容量に変換するステップと、
(e)第二の時点で、電荷を前記感光領域に蓄積し、結果として得られる第二の信号を保持するステップと、
を含むことを特徴とする方法。 - 請求項1又は2に記載の方法であって、
前記ステップ(a)からの前記第一のリセット信号を前記ステップ(e)からの前記第二の信号から減算し、前記ステップ(b)からの前記第二のリセット信号を前記ステップ(c)からの前記第一の信号から減算することを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/689,072 US7674648B2 (en) | 2007-03-21 | 2007-03-21 | Extended dynamic range using variable sensitivity pixels |
US11/689,072 | 2007-03-21 | ||
PCT/US2008/003552 WO2008115500A2 (en) | 2007-03-21 | 2008-03-19 | Extended dynamic range using variable sensitivity pixels |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010522479A JP2010522479A (ja) | 2010-07-01 |
JP2010522479A5 JP2010522479A5 (ja) | 2011-09-15 |
JP5190074B2 true JP5190074B2 (ja) | 2013-04-24 |
Family
ID=39523595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009554554A Active JP5190074B2 (ja) | 2007-03-21 | 2008-03-19 | 可変感度画素を用いたダイナミックレンジの拡大 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7674648B2 (ja) |
EP (1) | EP2123019B1 (ja) |
JP (1) | JP5190074B2 (ja) |
KR (1) | KR101488036B1 (ja) |
CN (1) | CN101690157B (ja) |
TW (1) | TWI430657B (ja) |
WO (1) | WO2008115500A2 (ja) |
Families Citing this family (17)
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KR20090050252A (ko) * | 2007-11-15 | 2009-05-20 | 삼성전자주식회사 | 이미지 센서 |
US8299839B2 (en) * | 2009-01-12 | 2012-10-30 | Oracle America, Inc. | Capacitively and conductively coupled multiplexer |
GB2474014B (en) | 2009-09-24 | 2015-04-15 | Selex Es Ltd | IR detection system and method |
US20110074996A1 (en) * | 2009-09-29 | 2011-03-31 | Shen Wang | Ccd image sensors with variable output gains in an output circuit |
JP5915031B2 (ja) * | 2011-08-31 | 2016-05-11 | ソニー株式会社 | 撮像装置および撮像方法、並びに電子機器 |
US9167182B2 (en) * | 2011-09-26 | 2015-10-20 | Semiconductor Components Industries, Llc | Charge sensing in image sensors with output channel having multiple-gain output paths |
FR2984608A1 (fr) * | 2011-12-19 | 2013-06-21 | St Microelectronics Sa | Procede de capture d'image au moyen d'un capteur d'image |
WO2014008946A1 (en) * | 2012-07-13 | 2014-01-16 | Teledyne Dalsa B.V. | Method of reading out a cmos image sensor and a cmos image sensor configured for carrying out such method |
EP3222034B1 (en) * | 2014-11-20 | 2019-06-19 | Teledyne Dalsa B.V. | A circuit controller for controlling a pixel circuit and a method of controlling a pixel circuit |
JP5897752B1 (ja) * | 2015-05-14 | 2016-03-30 | ブリルニクスジャパン株式会社 | 固体撮像装置およびその駆動方法、電子機器 |
FR3039928B1 (fr) * | 2015-08-03 | 2019-06-07 | Teledyne E2V Semiconductors Sas | Procede de commande d'un capteur d'image a pixels actifs |
CN105681692B (zh) * | 2016-01-11 | 2018-10-30 | 珠海艾思克科技有限公司 | Cmos图像传感器及其复位噪声评估方法 |
WO2017124058A1 (en) * | 2016-01-15 | 2017-07-20 | Invisage Technologies, Inc. | Image sensors having extended dynamic range |
JP6975908B2 (ja) * | 2017-02-28 | 2021-12-01 | パナソニックIpマネジメント株式会社 | 撮像システム及び撮像方法 |
JP7246863B2 (ja) * | 2018-04-20 | 2023-03-28 | ソニーセミコンダクタソリューションズ株式会社 | 受光装置、車両制御システム及び測距装置 |
JP7134781B2 (ja) | 2018-08-17 | 2022-09-12 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP7329963B2 (ja) * | 2019-05-17 | 2023-08-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
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JPS6353968A (ja) * | 1986-08-22 | 1988-03-08 | Nikon Corp | イメ−ジセンサ |
US6040570A (en) | 1998-05-29 | 2000-03-21 | Sarnoff Corporation | Extended dynamic range image sensor system |
US6410899B1 (en) * | 1998-06-17 | 2002-06-25 | Foveon, Inc. | Active pixel sensor with bootstrap amplification and reduced leakage during readout |
JP3592106B2 (ja) * | 1998-11-27 | 2004-11-24 | キヤノン株式会社 | 固体撮像装置およびカメラ |
US6639261B2 (en) * | 1998-12-08 | 2003-10-28 | Micron Technology, Inc. | Method for forming a low leakage contact in a CMOS imager |
US6204524B1 (en) * | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
US6486504B1 (en) * | 1999-10-26 | 2002-11-26 | Eastman Kodak Company | CMOS image sensor with extended dynamic range |
US7352454B2 (en) * | 2000-11-09 | 2008-04-01 | Canesta, Inc. | Methods and devices for improved charge management for three-dimensional and color sensing |
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JP3984814B2 (ja) | 2001-10-29 | 2007-10-03 | キヤノン株式会社 | 撮像素子、その撮像素子を用いた放射線撮像装置及びそれを用いた放射線撮像システム |
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-
2007
- 2007-03-21 US US11/689,072 patent/US7674648B2/en active Active
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2008
- 2008-03-19 JP JP2009554554A patent/JP5190074B2/ja active Active
- 2008-03-19 KR KR1020097019723A patent/KR101488036B1/ko active IP Right Grant
- 2008-03-19 WO PCT/US2008/003552 patent/WO2008115500A2/en active Application Filing
- 2008-03-19 CN CN200880009186.XA patent/CN101690157B/zh active Active
- 2008-03-19 EP EP08742130.1A patent/EP2123019B1/en active Active
- 2008-03-21 TW TW097110259A patent/TWI430657B/zh active
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Publication number | Publication date |
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EP2123019B1 (en) | 2019-09-25 |
EP2123019A2 (en) | 2009-11-25 |
WO2008115500A3 (en) | 2009-01-15 |
JP2010522479A (ja) | 2010-07-01 |
US20080231727A1 (en) | 2008-09-25 |
TWI430657B (zh) | 2014-03-11 |
KR101488036B1 (ko) | 2015-01-29 |
US7674648B2 (en) | 2010-03-09 |
KR20090121356A (ko) | 2009-11-25 |
WO2008115500A2 (en) | 2008-09-25 |
CN101690157B (zh) | 2015-04-01 |
CN101690157A (zh) | 2010-03-31 |
TW200904165A (en) | 2009-01-16 |
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