KR101476871B1 - 투영 광학계, 노광 장치 및 디바이스 제조 방법 - Google Patents

투영 광학계, 노광 장치 및 디바이스 제조 방법 Download PDF

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Publication number
KR101476871B1
KR101476871B1 KR1020100093681A KR20100093681A KR101476871B1 KR 101476871 B1 KR101476871 B1 KR 101476871B1 KR 1020100093681 A KR1020100093681 A KR 1020100093681A KR 20100093681 A KR20100093681 A KR 20100093681A KR 101476871 B1 KR101476871 B1 KR 101476871B1
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South Korea
Prior art keywords
optical system
magnification
mirror
plane
projection optical
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KR1020100093681A
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English (en)
Korean (ko)
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KR20110037857A (ko
Inventor
기요시 후까미
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020100093681A 2009-10-06 2010-09-28 투영 광학계, 노광 장치 및 디바이스 제조 방법 Active KR101476871B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009232865A JP5595001B2 (ja) 2009-10-06 2009-10-06 投影光学系、露光装置及びデバイス製造方法
JPJP-P-2009-232865 2009-10-06

Publications (2)

Publication Number Publication Date
KR20110037857A KR20110037857A (ko) 2011-04-13
KR101476871B1 true KR101476871B1 (ko) 2014-12-26

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ID=43886431

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KR1020100093681A Active KR101476871B1 (ko) 2009-10-06 2010-09-28 투영 광학계, 노광 장치 및 디바이스 제조 방법

Country Status (4)

Country Link
JP (1) JP5595001B2 (https=)
KR (1) KR101476871B1 (https=)
CN (1) CN102033315B (https=)
TW (1) TWI437267B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012205096B3 (de) 2012-03-29 2013-08-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
US9250509B2 (en) * 2012-06-04 2016-02-02 Applied Materials, Inc. Optical projection array exposure system
JP6041541B2 (ja) * 2012-06-04 2016-12-07 キヤノン株式会社 露光装置及びデバイス製造方法
JP6410406B2 (ja) * 2012-11-16 2018-10-24 キヤノン株式会社 投影光学系、露光装置および物品の製造方法
JP6386896B2 (ja) * 2014-12-02 2018-09-05 キヤノン株式会社 投影光学系、露光装置、および、デバイス製造方法
JP6896404B2 (ja) * 2016-11-30 2021-06-30 キヤノン株式会社 露光装置及び物品の製造方法
JP7005364B2 (ja) * 2018-01-29 2022-01-21 キヤノン株式会社 投影光学系、露光装置、物品の製造方法及び調整方法
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
JP2023004358A (ja) * 2021-06-25 2023-01-17 キヤノン株式会社 投影光学系、露光装置、および物品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306618A (ja) * 1995-04-28 1996-11-22 Canon Inc 光学装置
JP2002329651A (ja) * 2001-04-27 2002-11-15 Nikon Corp 露光装置、露光装置の製造方法、及びマイクロデバイスの製造方法
JP2005292450A (ja) * 2004-03-31 2005-10-20 Orc Mfg Co Ltd 投影光学系および投影露光装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235620A (ja) * 1985-08-09 1987-02-16 Canon Inc 光学倍率補正装置
JP3884098B2 (ja) * 1996-03-22 2007-02-21 株式会社東芝 露光装置および露光方法
JP3465793B2 (ja) * 2002-10-24 2003-11-10 株式会社ニコン 投影露光装置及び投影露光方法
JP2006337528A (ja) * 2005-05-31 2006-12-14 Fujifilm Holdings Corp 画像露光装置
JP5118407B2 (ja) * 2007-07-31 2013-01-16 キヤノン株式会社 光学系、露光装置及びデバイス製造方法
JP2009098467A (ja) * 2007-10-18 2009-05-07 Adtec Engineeng Co Ltd 露光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306618A (ja) * 1995-04-28 1996-11-22 Canon Inc 光学装置
JP2002329651A (ja) * 2001-04-27 2002-11-15 Nikon Corp 露光装置、露光装置の製造方法、及びマイクロデバイスの製造方法
JP2005292450A (ja) * 2004-03-31 2005-10-20 Orc Mfg Co Ltd 投影光学系および投影露光装置

Also Published As

Publication number Publication date
TW201118419A (en) 2011-06-01
JP5595001B2 (ja) 2014-09-24
CN102033315B (zh) 2012-12-12
KR20110037857A (ko) 2011-04-13
JP2011082311A (ja) 2011-04-21
TWI437267B (zh) 2014-05-11
CN102033315A (zh) 2011-04-27

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