KR101467587B1 - 금속(ⅳ) 테트라-아미디네이트 화합물 및 기상증착에서의 그의 용도 - Google Patents

금속(ⅳ) 테트라-아미디네이트 화합물 및 기상증착에서의 그의 용도 Download PDF

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KR101467587B1
KR101467587B1 KR1020097001242A KR20097001242A KR101467587B1 KR 101467587 B1 KR101467587 B1 KR 101467587B1 KR 1020097001242 A KR1020097001242 A KR 1020097001242A KR 20097001242 A KR20097001242 A KR 20097001242A KR 101467587 B1 KR101467587 B1 KR 101467587B1
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metal
hafnium
zirconium
tetra
amidinate
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KR20090024803A (ko
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로이 지. 고든
진-세바스티앙 렌
화즈 리
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프레지던트 앤드 펠로우즈 오브 하바드 칼리지
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Formation Of Insulating Films (AREA)
KR1020097001242A 2006-06-28 2007-06-26 금속(ⅳ) 테트라-아미디네이트 화합물 및 기상증착에서의 그의 용도 Active KR101467587B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US81720906P 2006-06-28 2006-06-28
US60/817,209 2006-06-28
US11/581,986 2006-10-17
US11/581,986 US7264486B2 (en) 2005-10-17 2006-10-17 Electrical connector

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KR20090024803A KR20090024803A (ko) 2009-03-09
KR101467587B1 true KR101467587B1 (ko) 2014-12-01

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Country Link
EP (1) EP2032529B1 (https=)
JP (2) JP5555872B2 (https=)
KR (1) KR101467587B1 (https=)
CN (2) CN102993050A (https=)
WO (1) WO2008002546A1 (https=)

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SG171683A1 (en) 2006-05-12 2011-06-29 Advanced Tech Materials Low temperature deposition of phase change memory materials
CN102993050A (zh) * 2006-06-28 2013-03-27 哈佛学院院长等 四脒基金属(iv)化合物及其在气相沉积中的用途
CN102352488B (zh) 2006-11-02 2016-04-06 诚实公司 对于金属薄膜的cvd/ald有用的锑及锗复合物
KR101629965B1 (ko) * 2007-04-09 2016-06-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 구리 배선용 코발트 질화물층 및 이의 제조방법
TWI398541B (zh) 2007-06-05 2013-06-11 羅門哈斯電子材料有限公司 有機金屬化合物
US8454928B2 (en) 2007-09-17 2013-06-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Tellurium precursors for GST deposition
KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
SG178736A1 (en) 2007-10-31 2012-03-29 Advanced Tech Materials Amorphous ge/te deposition process
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8101237B2 (en) 2008-05-29 2012-01-24 L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8236381B2 (en) 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
US8691668B2 (en) 2009-09-02 2014-04-08 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Dihalide germanium(II) precursors for germanium-containing film depositions
SE534233C2 (sv) * 2010-01-26 2011-06-07 Formox Ab Katalysator för framställning av aldehyd
US9240319B2 (en) 2010-02-03 2016-01-19 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
US9012876B2 (en) 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
SG187920A1 (en) * 2010-08-27 2013-03-28 Sigma Aldrich Co Llc Molybdenum (iv) amide precursors and use thereof in atomic layer deposition
CN102418084A (zh) * 2011-12-14 2012-04-18 无锡迈纳德微纳技术有限公司 一种源气隔离的固态源原子层沉积装置和方法
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
CN104307572B (zh) * 2014-10-16 2016-06-22 山西大学 一种脒基铝金属催化剂及其制备方法
CN113652672B (zh) * 2015-05-27 2023-12-22 Asm Ip 控股有限公司 用于含钼或钨薄膜的ald的前体的合成和用途
KR101581314B1 (ko) 2015-07-20 2015-12-31 (주)마이크로켐 텅스텐 전구체 및 이를 포함하는 텅스텐 함유 필름 증착방법
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US10358407B2 (en) 2016-10-12 2019-07-23 Asm Ip Holding B.V. Synthesis and use of precursors for vapor deposition of tungsten containing thin films
US10643838B2 (en) * 2017-06-20 2020-05-05 Applied Materials, Inc. In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD
CN108641073B (zh) * 2018-04-17 2020-09-29 山西大学 一种三核有机亚锡金属催化剂及其制备方法和应用
US12516414B2 (en) 2019-03-19 2026-01-06 Asm Ip Holding B.V. Reactor manifolds
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
CN110128373B (zh) * 2019-06-12 2023-03-24 鸿翌科技有限公司 哌嗪基锡配合物及其制备方法、薄膜、太阳能电池
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드
TWI865725B (zh) 2020-02-10 2024-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 高深寬比孔內的氧化鉿之沉積
KR20220167299A (ko) * 2020-04-10 2022-12-20 가부시키가이샤 아데카 아미디네이트 화합물, 그 2 량체 화합물, 박막 형성용 원료 및 박막의 제조 방법
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착
WO2022196491A1 (ja) 2021-03-18 2022-09-22 株式会社Adeka スズ化合物、薄膜形成用原料、薄膜、薄膜の製造方法及びハロゲン化合物
KR102806563B1 (ko) * 2022-05-11 2025-05-16 한국화학연구원 신규한 유기주석 화합물 및 이를 이용한 박막의 제조방법
CN117024309B (zh) * 2023-08-14 2025-12-26 苏州源展材料科技有限公司 一种低锂含量的脒基金属配合物的制备方法

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WO2004046417A2 (en) * 2002-11-15 2004-06-03 President And Fellows Of Harvard College Atomic layer deposition using metal amidinates

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WO2004046417A2 (en) * 2002-11-15 2004-06-03 President And Fellows Of Harvard College Atomic layer deposition using metal amidinates

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EP2032529A1 (en) 2009-03-11
JP2013209375A (ja) 2013-10-10
WO2008002546A1 (en) 2008-01-03
CN101500989B (zh) 2012-12-19
EP2032529B1 (en) 2012-10-17
KR20090024803A (ko) 2009-03-09
CN102993050A (zh) 2013-03-27
CN101500989A (zh) 2009-08-05
JP2009542654A (ja) 2009-12-03
JP5555872B2 (ja) 2014-07-23

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