KR101467152B1 - 은계 원통 타깃 및 그 제조 방법 - Google Patents

은계 원통 타깃 및 그 제조 방법 Download PDF

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Publication number
KR101467152B1
KR101467152B1 KR1020147004114A KR20147004114A KR101467152B1 KR 101467152 B1 KR101467152 B1 KR 101467152B1 KR 1020147004114 A KR1020147004114 A KR 1020147004114A KR 20147004114 A KR20147004114 A KR 20147004114A KR 101467152 B1 KR101467152 B1 KR 101467152B1
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KR
South Korea
Prior art keywords
silver
diameter
central axis
extrusion
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020147004114A
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English (en)
Korean (ko)
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KR20140029549A (ko
Inventor
쇼조 고미야마
Original Assignee
미쓰비시 마테리알 가부시키가이샤
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Publication of KR20140029549A publication Critical patent/KR20140029549A/ko
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Publication of KR101467152B1 publication Critical patent/KR101467152B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C23/00—Extruding metal; Impact extrusion
    • B21C23/002—Extruding materials of special alloys so far as the composition of the alloy requires or permits special extruding methods of sequences
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Extrusion Of Metal (AREA)
  • Metal Extraction Processes (AREA)
  • Optics & Photonics (AREA)
KR1020147004114A 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법 Expired - Fee Related KR101467152B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012071328A JP5472353B2 (ja) 2012-03-27 2012-03-27 銀系円筒ターゲット及びその製造方法
JPJP-P-2012-071328 2012-03-27
PCT/JP2012/079485 WO2013145424A1 (ja) 2012-03-27 2012-11-14 銀系円筒ターゲット及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147021670A Division KR20140130434A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20140029549A KR20140029549A (ko) 2014-03-10
KR101467152B1 true KR101467152B1 (ko) 2014-11-28

Family

ID=49258759

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020147004114A Expired - Fee Related KR101467152B1 (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법
KR1020147021670A Ceased KR20140130434A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법
KR1020167003213A Ceased KR20160022934A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020147021670A Ceased KR20140130434A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법
KR1020167003213A Ceased KR20160022934A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법

Country Status (8)

Country Link
US (1) US20150041313A1 (https=)
EP (1) EP2832895B1 (https=)
JP (1) JP5472353B2 (https=)
KR (3) KR101467152B1 (https=)
CN (1) CN104246002B (https=)
SG (1) SG11201406054TA (https=)
TW (1) TWI457450B (https=)
WO (1) WO2013145424A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5159962B1 (ja) * 2012-01-10 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
DE102012006718B3 (de) 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
JP6198177B2 (ja) * 2013-07-19 2017-09-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
DE102014214683A1 (de) * 2014-07-25 2016-01-28 Heraeus Deutschland GmbH & Co. KG Sputtertarget auf der Basis einer Silberlegierung
JP6350223B2 (ja) * 2014-11-04 2018-07-04 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
JP5975186B1 (ja) 2015-02-27 2016-08-23 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット及びＡｇ合金膜の製造方法
JP6259847B2 (ja) * 2016-02-05 2018-01-10 住友化学株式会社 円筒型ターゲットの製造方法
US20190389772A1 (en) * 2016-03-14 2019-12-26 Jx Nippon Mining & Metals Corporation Oxide sintered body
CN109196137B (zh) 2016-06-02 2021-11-30 田中贵金属工业株式会社 金溅射靶
JP6877179B2 (ja) * 2017-02-23 2021-05-26 Ｎｊｔ銅管株式会社 円筒型スパッタリングターゲット材及びその製造方法
JP7274816B2 (ja) 2017-12-06 2023-05-17 田中貴金属工業株式会社 金スパッタリングターゲットとその製造方法
TWI809013B (zh) 2017-12-06 2023-07-21 日商田中貴金屬工業股份有限公司 金濺鍍靶材的製造方法及金膜的製造方法
JP2019131850A (ja) * 2018-01-30 2019-08-08 三菱マテリアル株式会社 積層膜、及び、Ａｇ合金スパッタリングターゲット
US20220033960A1 (en) * 2018-09-26 2022-02-03 Jx Nippon Mining & Metals Corporation Sputtering Target and Method for Producing Same
CN111215839A (zh) * 2018-11-23 2020-06-02 宁波江丰电子材料股份有限公司 镀膜材料的成型方法
CN109440073A (zh) * 2018-11-29 2019-03-08 信利光电股份有限公司 一种银合金靶材、银合金镀层和电致变色后视镜
JP6853458B2 (ja) * 2019-02-06 2021-03-31 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP2020125533A (ja) * 2019-02-06 2020-08-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP2021075762A (ja) * 2019-11-08 2021-05-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP7225170B2 (ja) * 2020-08-05 2023-02-20 松田産業株式会社 Ａｇ合金円筒形スパッタリングターゲット、スパッタリング装置及び電子デバイスの製造方法
CN113088749A (zh) * 2021-03-11 2021-07-09 先导薄膜材料（广东）有限公司 一种银合金及其制备方法
CN116752104A (zh) * 2023-06-16 2023-09-15 基迈克材料科技（苏州）有限公司 一种半导体用的高纯低氧细晶Ag旋转管靶的制作方法
CN117102272B (zh) * 2023-09-11 2025-02-11 丰联科光电(洛阳)股份有限公司 一种银合金管靶的制造方法
CN117702063A (zh) * 2023-11-17 2024-03-15 郑州大学 一种银镁合金靶材及其制备方法
EP4610391A1 (en) * 2024-03-01 2025-09-03 Materion Advanced Materials Germany GmbH Ag alloy sputtering target with low oxygen content

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001192752A (ja) * 1999-07-12 2001-07-17 Sony Corp 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品
KR20060026964A (ko) * 2003-07-16 2006-03-24 가부시키가이샤 고베 세이코쇼 Ａｇ계 스퍼터링 타겟 및 그의 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294738B1 (en) * 1997-03-31 2001-09-25 American Superconductor Corporation Silver and silver alloy articles
US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
WO2002020866A1 (en) * 2000-09-08 2002-03-14 Asahi Glass Company, Limited Cylindrical target and method of manufacturing the cylindrical target
CN1238554C (zh) * 2002-06-24 2006-01-25 株式会社钢臂功科研 银合金溅射靶及其制造方法
JP4264302B2 (ja) * 2002-06-24 2009-05-13 株式会社コベルコ科研 銀合金スパッタリングターゲットとその製造方法
JP3993530B2 (ja) * 2003-05-16 2007-10-17 株式会社神戸製鋼所 Ａｇ−Ｂｉ系合金スパッタリングターゲットおよびその製造方法
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same
DE102005050424B4 (de) * 2005-10-19 2009-10-22 W.C. Heraeus Gmbh Sputtertarget aus mehrkomponentigen Legierungen
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
JP5561846B2 (ja) * 2006-12-13 2014-07-30 株式会社Ｕａｃｊ押出加工 高強度アルミニウム合金材およびその製造方法
JP4793502B2 (ja) * 2009-10-06 2011-10-12 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5533545B2 (ja) 2010-01-12 2014-06-25 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5159963B1 (ja) * 2012-01-13 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
DE102012006718B3 (de) * 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001192752A (ja) * 1999-07-12 2001-07-17 Sony Corp 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品
KR20060026964A (ko) * 2003-07-16 2006-03-24 가부시키가이샤 고베 세이코쇼 Ａｇ계 스퍼터링 타겟 및 그의 제조방법

Also Published As

Publication number Publication date
KR20140029549A (ko) 2014-03-10
JP2013204052A (ja) 2013-10-07
EP2832895B1 (en) 2019-08-21
KR20160022934A (ko) 2016-03-02
KR20140130434A (ko) 2014-11-10
EP2832895A4 (en) 2016-04-13
WO2013145424A1 (ja) 2013-10-03
TWI457450B (zh) 2014-10-21
EP2832895A1 (en) 2015-02-04
TW201339327A (zh) 2013-10-01
SG11201406054TA (en) 2014-11-27
CN104246002B (zh) 2015-11-25
JP5472353B2 (ja) 2014-04-16
CN104246002A (zh) 2014-12-24
US20150041313A1 (en) 2015-02-12

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