KR101457715B1 - 저유전율 비정질 실리카계 피막의 형성 방법 및, 상기 방법으로 얻어지는 저유전율 비정질 실리카계 피막 - Google Patents

저유전율 비정질 실리카계 피막의 형성 방법 및, 상기 방법으로 얻어지는 저유전율 비정질 실리카계 피막 Download PDF

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KR101457715B1
KR101457715B1 KR1020097006217A KR20097006217A KR101457715B1 KR 101457715 B1 KR101457715 B1 KR 101457715B1 KR 1020097006217 A KR1020097006217 A KR 1020097006217A KR 20097006217 A KR20097006217 A KR 20097006217A KR 101457715 B1 KR101457715 B1 KR 101457715B1
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coating film
group
coating
substrate
film
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Korean (ko)
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KR20090057280A (ko
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미키 에가미
아키라 나카시마
미치오 고마쓰
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닛키 쇼쿠바이카세이 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020097006217A 2006-08-28 2007-07-11 저유전율 비정질 실리카계 피막의 형성 방법 및, 상기 방법으로 얻어지는 저유전율 비정질 실리카계 피막 Expired - Fee Related KR101457715B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006231202A JP5014709B2 (ja) 2006-08-28 2006-08-28 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜
JPJP-P-2006-231202 2006-08-28
PCT/JP2007/063788 WO2008026387A1 (en) 2006-08-28 2007-07-11 Method of forming amorphous silica coating of low dielectric constant and amorphous silica coating of low dielectric constant obtained thereby

Publications (2)

Publication Number Publication Date
KR20090057280A KR20090057280A (ko) 2009-06-04
KR101457715B1 true KR101457715B1 (ko) 2014-11-12

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KR1020097006217A Expired - Fee Related KR101457715B1 (ko) 2006-08-28 2007-07-11 저유전율 비정질 실리카계 피막의 형성 방법 및, 상기 방법으로 얻어지는 저유전율 비정질 실리카계 피막

Country Status (6)

Country Link
US (1) US8227028B2 (https=)
EP (1) EP2073254B1 (https=)
JP (1) JP5014709B2 (https=)
KR (1) KR101457715B1 (https=)
TW (1) TWI484558B (https=)
WO (1) WO2008026387A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0674501B2 (ja) * 1985-02-27 1994-09-21 大阪大学長 電子線による異種原子の固体内注入方法
JP5299605B2 (ja) * 2007-11-19 2013-09-25 日揮触媒化成株式会社 低誘電率シリカ系被膜のダメージ修復方法および該方法により修復された低誘電率シリカ系被膜
US8314201B2 (en) 2007-11-30 2012-11-20 The United States Of America As Represented By The Administration Of The National Aeronautics And Space Administration Highly porous ceramic oxide aerogels having improved flexibility
US8258251B2 (en) * 2007-11-30 2012-09-04 The United States Of America, As Represented By The Administrator Of The National Aeronautics And Space Administration Highly porous ceramic oxide aerogels having improved flexibility
JP5551885B2 (ja) * 2008-05-01 2014-07-16 日揮触媒化成株式会社 低誘電率シリカ系被膜の形成方法及び該方法から得られる低誘電率シリカ系被膜
PL2988955T3 (pl) 2013-04-26 2022-02-14 Pacific Nano Products, Inc. Włóknista strukturyzowana amorficzna krzemionka zawierająca strącany węglan wapnia, kompozycje z niej wytworzone i sposoby ich zastosowania
CN111965753A (zh) * 2019-08-13 2020-11-20 斯特里特技术有限公司 直径减小的光纤

Citations (2)

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JP2004079592A (ja) * 2002-08-12 2004-03-11 Asahi Kasei Corp 層間絶縁用薄膜
JP2004153147A (ja) * 2002-10-31 2004-05-27 Catalysts & Chem Ind Co Ltd 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜

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JPS6256574A (ja) * 1985-09-04 1987-03-12 Mitsubishi Heavy Ind Ltd 薄膜の形成方法
JP2752968B2 (ja) * 1987-05-07 1998-05-18 東京応化工業株式会社 シリカ系被膜の形成法
JPH0764543B2 (ja) * 1987-07-24 1995-07-12 富士デヴィソン化学株式会社 球状シリカ及びその製法
US5167716A (en) * 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JPH11256106A (ja) 1998-03-09 1999-09-21 Hitachi Chem Co Ltd シリカ系被膜形成用塗布液、シリカ系被膜の製造法、シリカ系被膜及び半導体装置
JP2002524849A (ja) * 1998-08-27 2002-08-06 アライドシグナル・インコーポレイテッド ナノ細孔シリカの機械的強度を最適化する方法
WO2001048806A1 (en) 1999-12-28 2001-07-05 Catalysts & Chemicals Industries Co., Ltd. Method of forming low-dielectric-constant film, and semiconductor substrate with low-dielectric-constant film
US6406794B1 (en) * 2001-02-08 2002-06-18 Jsr Corporation Film-forming composition
JP4471564B2 (ja) * 2002-10-31 2010-06-02 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液の調製方法
JP2005116830A (ja) 2003-10-08 2005-04-28 Mitsui Chemicals Inc 多孔質シリカの製造方法、多孔質シリカおよびその用途
KR100508696B1 (ko) * 2003-12-01 2005-08-17 학교법인 서강대학교 구리배선용 초저유전 절연막
JP2005330376A (ja) * 2004-05-20 2005-12-02 Jsr Corp 環状オレフィン系重合体のフィルムまたはシートの製造方法
EP1615260A3 (en) * 2004-07-09 2009-09-16 JSR Corporation Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device
JP2006117763A (ja) 2004-10-20 2006-05-11 Catalysts & Chem Ind Co Ltd 低誘電率非晶質シリカ系被膜形成用塗布液、その調製方法およびこれより得られる低誘電率非晶質シリカ系被膜
JP4756128B2 (ja) * 2004-10-20 2011-08-24 日揮触媒化成株式会社 半導体加工用保護膜形成用塗布液、その調製方法およびこれより得られる半導体加工用保護膜
JP5160237B2 (ja) * 2005-12-22 2013-03-13 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液から得られる低誘電率非晶質シリカ系被膜

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Publication number Priority date Publication date Assignee Title
JP2004079592A (ja) * 2002-08-12 2004-03-11 Asahi Kasei Corp 層間絶縁用薄膜
JP2004153147A (ja) * 2002-10-31 2004-05-27 Catalysts & Chem Ind Co Ltd 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜

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US20100003181A1 (en) 2010-01-07
TWI484558B (zh) 2015-05-11
JP2008053657A (ja) 2008-03-06
EP2073254A1 (en) 2009-06-24
WO2008026387A1 (en) 2008-03-06
KR20090057280A (ko) 2009-06-04
JP5014709B2 (ja) 2012-08-29
EP2073254A4 (en) 2010-04-21
TW200828438A (en) 2008-07-01
US8227028B2 (en) 2012-07-24
EP2073254B1 (en) 2011-05-25

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