KR101450022B1 - 기판 온도 제어 장치용 스테이지 - Google Patents

기판 온도 제어 장치용 스테이지 Download PDF

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Publication number
KR101450022B1
KR101450022B1 KR1020097021109A KR20097021109A KR101450022B1 KR 101450022 B1 KR101450022 B1 KR 101450022B1 KR 1020097021109 A KR1020097021109 A KR 1020097021109A KR 20097021109 A KR20097021109 A KR 20097021109A KR 101450022 B1 KR101450022 B1 KR 101450022B1
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KR
South Korea
Prior art keywords
thickness
substrate
plate
surface treatment
metal plate
Prior art date
Application number
KR1020097021109A
Other languages
English (en)
Korean (ko)
Other versions
KR20100015461A (ko
Inventor
켄이치 반도
카츠오 사이오
카즈히코 쿠보타
Original Assignee
가부시키가이샤 고마쓰 세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시키가이샤 고마쓰 세이사쿠쇼 filed Critical 가부시키가이샤 고마쓰 세이사쿠쇼
Publication of KR20100015461A publication Critical patent/KR20100015461A/ko
Application granted granted Critical
Publication of KR101450022B1 publication Critical patent/KR101450022B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
  • Drying Of Semiconductors (AREA)
KR1020097021109A 2007-04-26 2008-03-28 기판 온도 제어 장치용 스테이지 KR101450022B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007116606A JP5294570B2 (ja) 2007-04-26 2007-04-26 基板温度制御装置用ステージ
JPJP-P-2007-116606 2007-04-26
PCT/JP2008/056092 WO2008136228A1 (ja) 2007-04-26 2008-03-28 基板温度制御装置用ステージ

Publications (2)

Publication Number Publication Date
KR20100015461A KR20100015461A (ko) 2010-02-12
KR101450022B1 true KR101450022B1 (ko) 2014-10-13

Family

ID=39943346

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097021109A KR101450022B1 (ko) 2007-04-26 2008-03-28 기판 온도 제어 장치용 스테이지

Country Status (6)

Country Link
US (1) US8399811B2 (ja)
JP (1) JP5294570B2 (ja)
KR (1) KR101450022B1 (ja)
CN (1) CN101689481B (ja)
TW (1) TWI469246B (ja)
WO (1) WO2008136228A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100065A (ja) * 2009-11-09 2011-05-19 Shin-Etsu Chemical Co Ltd ペリクル膜の製造方法および装置
JP2011158814A (ja) * 2010-02-03 2011-08-18 Shin-Etsu Chemical Co Ltd ペリクル膜の製造方法および装置
JP5684023B2 (ja) * 2011-03-28 2015-03-11 株式会社小松製作所 加熱装置
JP5694824B2 (ja) * 2011-03-28 2015-04-01 株式会社小松製作所 加熱装置
US9465049B2 (en) * 2012-04-13 2016-10-11 James B. Colvin Apparatus and method for electronic sample preparation
US9461355B2 (en) 2013-03-29 2016-10-04 Intel Corporation Method apparatus and material for radio frequency passives and antennas
JP6390214B2 (ja) * 2014-07-01 2018-09-19 セイコーエプソン株式会社 液体吐出装置
KR102329513B1 (ko) * 2016-05-10 2021-11-23 램 리써치 코포레이션 적층된 히터와 히터 전압 입력부들 사이의 연결부들

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001126851A (ja) 1999-10-26 2001-05-11 Keihin Sokki Kk 半導体ウエハーにおけるヒータ装置およびその製造方法
JP2006140367A (ja) * 2004-11-15 2006-06-01 Sumitomo Electric Ind Ltd 半導体製造装置用加熱体およびこれを搭載した加熱装置
JP3123354U (ja) * 2006-04-28 2006-07-20 京浜測器株式会社 半導体ウエハーにおけるヒーター装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3049539B2 (ja) 1995-11-08 2000-06-05 日本電熱株式会社 加熱装置
TW439094B (en) 1998-02-16 2001-06-07 Komatsu Co Ltd Apparatus for controlling temperature of substrate
JP2006093495A (ja) * 2004-09-27 2006-04-06 Fuji Photo Film Co Ltd 基板の加熱装置及び方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001126851A (ja) 1999-10-26 2001-05-11 Keihin Sokki Kk 半導体ウエハーにおけるヒータ装置およびその製造方法
JP2006140367A (ja) * 2004-11-15 2006-06-01 Sumitomo Electric Ind Ltd 半導体製造装置用加熱体およびこれを搭載した加熱装置
JP3123354U (ja) * 2006-04-28 2006-07-20 京浜測器株式会社 半導体ウエハーにおけるヒーター装置

Also Published As

Publication number Publication date
US20100133256A1 (en) 2010-06-03
CN101689481B (zh) 2012-06-27
CN101689481A (zh) 2010-03-31
TW200901361A (en) 2009-01-01
JP2008277382A (ja) 2008-11-13
TWI469246B (zh) 2015-01-11
KR20100015461A (ko) 2010-02-12
US8399811B2 (en) 2013-03-19
WO2008136228A1 (ja) 2008-11-13
JP5294570B2 (ja) 2013-09-18

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