WO2008136228A1 - 基板温度制御装置用ステージ - Google Patents

基板温度制御装置用ステージ Download PDF

Info

Publication number
WO2008136228A1
WO2008136228A1 PCT/JP2008/056092 JP2008056092W WO2008136228A1 WO 2008136228 A1 WO2008136228 A1 WO 2008136228A1 JP 2008056092 W JP2008056092 W JP 2008056092W WO 2008136228 A1 WO2008136228 A1 WO 2008136228A1
Authority
WO
WIPO (PCT)
Prior art keywords
stage
plate
control unit
temperature control
substrate
Prior art date
Application number
PCT/JP2008/056092
Other languages
English (en)
French (fr)
Inventor
Kenichi Bandoh
Katsuo Saio
Kazuhiko Kubota
Original Assignee
Komatsu Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd. filed Critical Komatsu Ltd.
Priority to US12/596,755 priority Critical patent/US8399811B2/en
Priority to KR1020097021109A priority patent/KR101450022B1/ko
Priority to CN2008800217938A priority patent/CN101689481B/zh
Publication of WO2008136228A1 publication Critical patent/WO2008136228A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　プレートの材料としてセラミック以外の材料を用いながら、プレートの熱変形を防止することにより、ローコストで応答性の良い基板温度制御装置用ステージ。この基板温度制御装置用ステージは、基板の温度を制御する基板温度制御装置において基板を載置するために用いられるステージであって、基板と対向する第１の面、及び、該第１の面と反対側の第２の面を有するプレートと、プレートの第２の面に接着された面状のヒータとを具備し、プレートの第１の面に、第１の厚さで表面処理が施され、プレートの第２の面の所定の領域に、第１の厚さよりも薄い第２の厚さで表面処理が施され、又は、表面処理が施されていないことを特徴とする。
PCT/JP2008/056092 2007-04-26 2008-03-28 基板温度制御装置用ステージ WO2008136228A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/596,755 US8399811B2 (en) 2007-04-26 2008-03-28 Stage for substrate temperature control apparatus
KR1020097021109A KR101450022B1 (ko) 2007-04-26 2008-03-28 기판 온도 제어 장치용 스테이지
CN2008800217938A CN101689481B (zh) 2007-04-26 2008-03-28 基板温度控制装置用工作台

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-116606 2007-04-26
JP2007116606A JP5294570B2 (ja) 2007-04-26 2007-04-26 基板温度制御装置用ステージ

Publications (1)

Publication Number Publication Date
WO2008136228A1 true WO2008136228A1 (ja) 2008-11-13

Family

ID=39943346

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056092 WO2008136228A1 (ja) 2007-04-26 2008-03-28 基板温度制御装置用ステージ

Country Status (6)

Country Link
US (1) US8399811B2 (ja)
JP (1) JP5294570B2 (ja)
KR (1) KR101450022B1 (ja)
CN (1) CN101689481B (ja)
TW (1) TWI469246B (ja)
WO (1) WO2008136228A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100065A (ja) * 2009-11-09 2011-05-19 Shin-Etsu Chemical Co Ltd ペリクル膜の製造方法および装置
JP2011158814A (ja) * 2010-02-03 2011-08-18 Shin-Etsu Chemical Co Ltd ペリクル膜の製造方法および装置
JP5684023B2 (ja) * 2011-03-28 2015-03-11 株式会社小松製作所 加熱装置
JP5694824B2 (ja) * 2011-03-28 2015-04-01 株式会社小松製作所 加熱装置
US9465049B2 (en) * 2012-04-13 2016-10-11 James B. Colvin Apparatus and method for electronic sample preparation
US9461355B2 (en) 2013-03-29 2016-10-04 Intel Corporation Method apparatus and material for radio frequency passives and antennas
JP6390214B2 (ja) * 2014-07-01 2018-09-19 セイコーエプソン株式会社 液体吐出装置
KR102360248B1 (ko) * 2016-05-10 2022-02-07 램 리써치 코포레이션 상이한 히터 트레이스 재료를 사용한 적층된 히터

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093495A (ja) * 2004-09-27 2006-04-06 Fuji Photo Film Co Ltd 基板の加熱装置及び方法
JP2006140367A (ja) * 2004-11-15 2006-06-01 Sumitomo Electric Ind Ltd 半導体製造装置用加熱体およびこれを搭載した加熱装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3049539B2 (ja) 1995-11-08 2000-06-05 日本電熱株式会社 加熱装置
TW439094B (en) 1998-02-16 2001-06-07 Komatsu Co Ltd Apparatus for controlling temperature of substrate
JP2001126851A (ja) * 1999-10-26 2001-05-11 Keihin Sokki Kk 半導体ウエハーにおけるヒータ装置およびその製造方法
JP3123354U (ja) * 2006-04-28 2006-07-20 京浜測器株式会社 半導体ウエハーにおけるヒーター装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093495A (ja) * 2004-09-27 2006-04-06 Fuji Photo Film Co Ltd 基板の加熱装置及び方法
JP2006140367A (ja) * 2004-11-15 2006-06-01 Sumitomo Electric Ind Ltd 半導体製造装置用加熱体およびこれを搭載した加熱装置

Also Published As

Publication number Publication date
JP2008277382A (ja) 2008-11-13
TW200901361A (en) 2009-01-01
KR101450022B1 (ko) 2014-10-13
US8399811B2 (en) 2013-03-19
CN101689481A (zh) 2010-03-31
TWI469246B (zh) 2015-01-11
KR20100015461A (ko) 2010-02-12
JP5294570B2 (ja) 2013-09-18
US20100133256A1 (en) 2010-06-03
CN101689481B (zh) 2012-06-27

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