KR101433273B1 - 비휘발성 메모리 소자 및 그 제조 방법 - Google Patents

비휘발성 메모리 소자 및 그 제조 방법 Download PDF

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Publication number
KR101433273B1
KR101433273B1 KR1020090042370A KR20090042370A KR101433273B1 KR 101433273 B1 KR101433273 B1 KR 101433273B1 KR 1020090042370 A KR1020090042370 A KR 1020090042370A KR 20090042370 A KR20090042370 A KR 20090042370A KR 101433273 B1 KR101433273 B1 KR 101433273B1
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KR
South Korea
Prior art keywords
layer
organic
nanocrystal
memory device
electrode
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KR1020090042370A
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English (en)
Korean (ko)
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KR20100123250A (ko
Inventor
박재근
이곤섭
승현민
이종대
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한양대학교 산학협력단
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Priority to KR1020090042370A priority Critical patent/KR101433273B1/ko
Priority to PCT/KR2010/003000 priority patent/WO2010131901A2/fr
Publication of KR20100123250A publication Critical patent/KR20100123250A/ko
Application granted granted Critical
Publication of KR101433273B1 publication Critical patent/KR101433273B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
KR1020090042370A 2009-05-15 2009-05-15 비휘발성 메모리 소자 및 그 제조 방법 KR101433273B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020090042370A KR101433273B1 (ko) 2009-05-15 2009-05-15 비휘발성 메모리 소자 및 그 제조 방법
PCT/KR2010/003000 WO2010131901A2 (fr) 2009-05-15 2010-05-12 Dispositif mémoire non volatile

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090042370A KR101433273B1 (ko) 2009-05-15 2009-05-15 비휘발성 메모리 소자 및 그 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR20140026928A Division KR101482723B1 (ko) 2014-03-07 2014-03-07 비휘발성 메모리 소자 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20100123250A KR20100123250A (ko) 2010-11-24
KR101433273B1 true KR101433273B1 (ko) 2014-08-27

Family

ID=43085455

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090042370A KR101433273B1 (ko) 2009-05-15 2009-05-15 비휘발성 메모리 소자 및 그 제조 방법

Country Status (2)

Country Link
KR (1) KR101433273B1 (fr)
WO (1) WO2010131901A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101460165B1 (ko) * 2011-02-18 2014-11-11 한양대학교 산학협력단 비휘발성 메모리 소자
WO2014017683A1 (fr) * 2012-07-27 2014-01-30 Iucf-Hyu Dispositif de mémoire non volatile
KR101485507B1 (ko) * 2014-09-25 2015-01-26 한양대학교 산학협력단 비휘발성 메모리 소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050025088A (ko) * 2003-09-03 2005-03-11 더 리전트 오브 더 유니버시티 오브 캘리포니아 전계 프로그래밍가능 막에 기초한 메모리 디바이스
KR100666760B1 (ko) * 2004-12-20 2007-01-09 한국화학연구원 비휘발성 메모리 유기 박막 트랜지스터 소자 및 그 제조방법
KR20080067857A (ko) * 2007-01-17 2008-07-22 한양대학교 산학협력단 유기 쌍안정성 기억 소자 및 그 제조 방법
KR20080095761A (ko) * 2007-04-25 2008-10-29 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060134763A (ko) * 2005-06-23 2006-12-28 서동학 나노 입자와 고분자 소재로 구성된 비휘발성 메모리 소자
DE102005035445B4 (de) * 2005-07-28 2007-09-27 Qimonda Ag Nichtflüchtige, resistive Speicherzelle auf der Basis von Metalloxid-Nanopartikeln sowie Verfahren zu deren Herstellung und entsprechende Speicherzellenanordnung
KR100868096B1 (ko) * 2007-04-25 2008-11-11 삼성전자주식회사 전도성 고분자 유기물내 나노크리스탈층이 장착된 비휘발성메모리 소자 및 이의 제조 방법
KR101432151B1 (ko) * 2007-07-16 2014-08-21 한국세라믹기술원 나노입자막 및 이를 포함하는 나노입자 전하저장 장치,나노입자 플래쉬 메모리 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050025088A (ko) * 2003-09-03 2005-03-11 더 리전트 오브 더 유니버시티 오브 캘리포니아 전계 프로그래밍가능 막에 기초한 메모리 디바이스
KR100666760B1 (ko) * 2004-12-20 2007-01-09 한국화학연구원 비휘발성 메모리 유기 박막 트랜지스터 소자 및 그 제조방법
KR20080067857A (ko) * 2007-01-17 2008-07-22 한양대학교 산학협력단 유기 쌍안정성 기억 소자 및 그 제조 방법
KR20080095761A (ko) * 2007-04-25 2008-10-29 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조 방법

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Publication number Publication date
KR20100123250A (ko) 2010-11-24
WO2010131901A3 (fr) 2011-02-17
WO2010131901A2 (fr) 2010-11-18

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