WO2010131901A3 - Dispositif mémoire non volatile - Google Patents

Dispositif mémoire non volatile Download PDF

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Publication number
WO2010131901A3
WO2010131901A3 PCT/KR2010/003000 KR2010003000W WO2010131901A3 WO 2010131901 A3 WO2010131901 A3 WO 2010131901A3 KR 2010003000 W KR2010003000 W KR 2010003000W WO 2010131901 A3 WO2010131901 A3 WO 2010131901A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory device
volatile memory
organic layer
present
including donor
Prior art date
Application number
PCT/KR2010/003000
Other languages
English (en)
Korean (ko)
Other versions
WO2010131901A2 (fr
Inventor
박재근
이곤섭
승현민
이종대
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Publication of WO2010131901A2 publication Critical patent/WO2010131901A2/fr
Publication of WO2010131901A3 publication Critical patent/WO2010131901A3/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Abstract

La présente invention concerne un dispositif mémoire non volatile comprenant : une première et une seconde électrode; une couche organique disposée entre la première et la seconde électrode et comprenant une substance donneuse et une substance acceptrice; et une couche nanocristalline se composant d'au moins une couche disposée dans la couche organique. De cette manière, l'invention permet la réalisation d'un dispositif mémoire produit avec une couche cristalline formée dans la couche organique et comprenant une substance donneuse et une substance acceptrice, ce qui permet une augmentation de la probabilité de charge électrique des nanocristaux et une amélioration de la fiabilité du dispositif.
PCT/KR2010/003000 2009-05-15 2010-05-12 Dispositif mémoire non volatile WO2010131901A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090042370A KR101433273B1 (ko) 2009-05-15 2009-05-15 비휘발성 메모리 소자 및 그 제조 방법
KR10-2009-0042370 2009-05-15

Publications (2)

Publication Number Publication Date
WO2010131901A2 WO2010131901A2 (fr) 2010-11-18
WO2010131901A3 true WO2010131901A3 (fr) 2011-02-17

Family

ID=43085455

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/003000 WO2010131901A2 (fr) 2009-05-15 2010-05-12 Dispositif mémoire non volatile

Country Status (2)

Country Link
KR (1) KR101433273B1 (fr)
WO (1) WO2010131901A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101460165B1 (ko) * 2011-02-18 2014-11-11 한양대학교 산학협력단 비휘발성 메모리 소자
US9755169B2 (en) 2012-07-27 2017-09-05 Iucf-Hyu Nonvolatile memory device
KR101485507B1 (ko) * 2014-09-25 2015-01-26 한양대학교 산학협력단 비휘발성 메모리 소자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060134763A (ko) * 2005-06-23 2006-12-28 서동학 나노 입자와 고분자 소재로 구성된 비휘발성 메모리 소자
KR20070014984A (ko) * 2005-07-28 2007-02-01 키몬다 아게 금속 산화물 나노입자를 기초한 비휘발성 저항 메모리셀,그 제조방법 및 메모리셀 배열
KR20080095761A (ko) * 2007-04-25 2008-10-29 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조 방법
KR20080095692A (ko) * 2007-04-25 2008-10-29 삼성전자주식회사 전도성 고분자 유기물내 나노크리스탈층이 장착된 비휘발성메모리 소자 및 이의 제조 방법
KR20090007965A (ko) * 2007-07-16 2009-01-21 한국산업기술평가원(관리부서:요업기술원) 나노입자막 및 이를 포함하는 나노입자 전하저장 장치,나노입자 플래쉬 메모리 및 그 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7274035B2 (en) * 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films
KR100666760B1 (ko) * 2004-12-20 2007-01-09 한국화학연구원 비휘발성 메모리 유기 박막 트랜지스터 소자 및 그 제조방법
KR100888726B1 (ko) * 2007-01-17 2009-03-17 한양대학교 산학협력단 유기 쌍안정성 기억 소자 및 그 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060134763A (ko) * 2005-06-23 2006-12-28 서동학 나노 입자와 고분자 소재로 구성된 비휘발성 메모리 소자
KR20070014984A (ko) * 2005-07-28 2007-02-01 키몬다 아게 금속 산화물 나노입자를 기초한 비휘발성 저항 메모리셀,그 제조방법 및 메모리셀 배열
KR20080095761A (ko) * 2007-04-25 2008-10-29 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조 방법
KR20080095692A (ko) * 2007-04-25 2008-10-29 삼성전자주식회사 전도성 고분자 유기물내 나노크리스탈층이 장착된 비휘발성메모리 소자 및 이의 제조 방법
KR20090007965A (ko) * 2007-07-16 2009-01-21 한국산업기술평가원(관리부서:요업기술원) 나노입자막 및 이를 포함하는 나노입자 전하저장 장치,나노입자 플래쉬 메모리 및 그 제조 방법

Also Published As

Publication number Publication date
WO2010131901A2 (fr) 2010-11-18
KR101433273B1 (ko) 2014-08-27
KR20100123250A (ko) 2010-11-24

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