WO2010131901A3 - Non-volatile memory device - Google Patents
Non-volatile memory device Download PDFInfo
- Publication number
- WO2010131901A3 WO2010131901A3 PCT/KR2010/003000 KR2010003000W WO2010131901A3 WO 2010131901 A3 WO2010131901 A3 WO 2010131901A3 KR 2010003000 W KR2010003000 W KR 2010003000W WO 2010131901 A3 WO2010131901 A3 WO 2010131901A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory device
- volatile memory
- organic layer
- present
- including donor
- Prior art date
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Abstract
The present invention relates to a non-volatile memory device, and provides a non-volatile memory device comprising: a first and a second electrode; an organic layer provided between the first and second electrodes, and including donor material and acceptor material; and a nanocrystal layer consisting of at least one layer provided in the organic layer. In this manner, the present invention enables the manufacture of a memory device produced with a crystal layer formed in the organic layer and including donor material and acceptor material, to increase the electric charge probability of the nanocrystals and to improve the reliability of the device.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090042370A KR101433273B1 (en) | 2009-05-15 | 2009-05-15 | Non-volatile memory device and method for manufacturing the same |
KR10-2009-0042370 | 2009-05-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010131901A2 WO2010131901A2 (en) | 2010-11-18 |
WO2010131901A3 true WO2010131901A3 (en) | 2011-02-17 |
Family
ID=43085455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2010/003000 WO2010131901A2 (en) | 2009-05-15 | 2010-05-12 | Non-volatile memory device |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101433273B1 (en) |
WO (1) | WO2010131901A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101460165B1 (en) * | 2011-02-18 | 2014-11-11 | 한양대학교 산학협력단 | Nonvolatile memory device |
US9755169B2 (en) | 2012-07-27 | 2017-09-05 | Iucf-Hyu | Nonvolatile memory device |
KR101485507B1 (en) * | 2014-09-25 | 2015-01-26 | 한양대학교 산학협력단 | Nonvolatile memory device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060134763A (en) * | 2005-06-23 | 2006-12-28 | 서동학 | Non-volatile memory devices composed by nanoparticles and polymer |
KR20070014984A (en) * | 2005-07-28 | 2007-02-01 | 키몬다 아게 | Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same |
KR20080095761A (en) * | 2007-04-25 | 2008-10-29 | 주식회사 하이닉스반도체 | Non-volatile memory device and method for manufacturing the same |
KR20080095692A (en) * | 2007-04-25 | 2008-10-29 | 삼성전자주식회사 | Non-volatile memory fabricated with embedded nano-crystals in conductive polymer and method for manufacturing the same |
KR20090007965A (en) * | 2007-07-16 | 2009-01-21 | 한국산업기술평가원(관리부서:요업기술원) | Nanoparticle layer and nanoparticle capacitor, flash memory comprising the same, and preparation methods thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7274035B2 (en) * | 2003-09-03 | 2007-09-25 | The Regents Of The University Of California | Memory devices based on electric field programmable films |
KR100666760B1 (en) * | 2004-12-20 | 2007-01-09 | 한국화학연구원 | Nonvolatile memory organic thin film transistor and its fabrication methods |
KR100888726B1 (en) * | 2007-01-17 | 2009-03-17 | 한양대학교 산학협력단 | Organic bistable memory devices and fabrication method thereof |
-
2009
- 2009-05-15 KR KR1020090042370A patent/KR101433273B1/en active IP Right Grant
-
2010
- 2010-05-12 WO PCT/KR2010/003000 patent/WO2010131901A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060134763A (en) * | 2005-06-23 | 2006-12-28 | 서동학 | Non-volatile memory devices composed by nanoparticles and polymer |
KR20070014984A (en) * | 2005-07-28 | 2007-02-01 | 키몬다 아게 | Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same |
KR20080095761A (en) * | 2007-04-25 | 2008-10-29 | 주식회사 하이닉스반도체 | Non-volatile memory device and method for manufacturing the same |
KR20080095692A (en) * | 2007-04-25 | 2008-10-29 | 삼성전자주식회사 | Non-volatile memory fabricated with embedded nano-crystals in conductive polymer and method for manufacturing the same |
KR20090007965A (en) * | 2007-07-16 | 2009-01-21 | 한국산업기술평가원(관리부서:요업기술원) | Nanoparticle layer and nanoparticle capacitor, flash memory comprising the same, and preparation methods thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20100123250A (en) | 2010-11-24 |
KR101433273B1 (en) | 2014-08-27 |
WO2010131901A2 (en) | 2010-11-18 |
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