KR101399801B1 - 기판 처리 방법 및 기판 처리 시스템 - Google Patents

기판 처리 방법 및 기판 처리 시스템 Download PDF

Info

Publication number
KR101399801B1
KR101399801B1 KR1020120142832A KR20120142832A KR101399801B1 KR 101399801 B1 KR101399801 B1 KR 101399801B1 KR 1020120142832 A KR1020120142832 A KR 1020120142832A KR 20120142832 A KR20120142832 A KR 20120142832A KR 101399801 B1 KR101399801 B1 KR 101399801B1
Authority
KR
South Korea
Prior art keywords
substrate
active species
solution
treatment liquid
liquid
Prior art date
Application number
KR1020120142832A
Other languages
English (en)
Korean (ko)
Other versions
KR20130070528A (ko
Inventor
고노스케 하야시
에미 마츠이
하루카 나카노
Original Assignee
시바우라 메카트로닉스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시바우라 메카트로닉스 가부시끼가이샤 filed Critical 시바우라 메카트로닉스 가부시끼가이샤
Publication of KR20130070528A publication Critical patent/KR20130070528A/ko
Application granted granted Critical
Publication of KR101399801B1 publication Critical patent/KR101399801B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
KR1020120142832A 2011-12-19 2012-12-10 기판 처리 방법 및 기판 처리 시스템 KR101399801B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-277349 2011-12-19
JP2011277349A JP5858770B2 (ja) 2011-12-19 2011-12-19 基板処理システム

Publications (2)

Publication Number Publication Date
KR20130070528A KR20130070528A (ko) 2013-06-27
KR101399801B1 true KR101399801B1 (ko) 2014-05-27

Family

ID=48588398

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120142832A KR101399801B1 (ko) 2011-12-19 2012-12-10 기판 처리 방법 및 기판 처리 시스템

Country Status (4)

Country Link
JP (1) JP5858770B2 (ja)
KR (1) KR101399801B1 (ja)
CN (1) CN103165411B (ja)
TW (1) TWI502673B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347385A (zh) * 2013-07-23 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件的选择性刻蚀方法及bsi图像传感器制作方法
JP6352143B2 (ja) * 2013-11-13 2018-07-04 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP6324775B2 (ja) * 2014-03-17 2018-05-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理装置を用いた基板処理方法
TWI630652B (zh) * 2014-03-17 2018-07-21 斯克林集團公司 基板處理裝置及使用基板處理裝置之基板處理方法
JP6499414B2 (ja) 2014-09-30 2019-04-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6903446B2 (ja) * 2016-03-07 2021-07-14 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
CN106449688A (zh) * 2016-10-28 2017-02-22 中国电子科技集团公司第四十四研究所 制作光敏区布线层的方法
JP7471182B2 (ja) 2020-09-11 2024-04-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338684A (ja) 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
KR20010051255A (ko) * 1999-10-26 2001-06-25 가네꼬 히사시 반도체 제조 장치
KR20080022044A (ko) * 2006-09-05 2008-03-10 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치
KR20090023076A (ko) * 2007-08-31 2009-03-04 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126425A (ja) * 1997-06-30 1999-01-29 Sumitomo Metal Ind Ltd 半導体基板のエッチング方法及びその装置
JP3653416B2 (ja) * 1999-05-19 2005-05-25 沖電気工業株式会社 エッチング方法およびエッチング装置
DE10248481B4 (de) * 2002-10-17 2006-04-27 Siltronic Ag Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium
KR100693252B1 (ko) * 2005-04-13 2007-03-13 삼성전자주식회사 기판 처리 장치, 기판 세정 장치 및 방법
JP2007251081A (ja) * 2006-03-20 2007-09-27 Dainippon Screen Mfg Co Ltd 基板処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338684A (ja) 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
KR20010051255A (ko) * 1999-10-26 2001-06-25 가네꼬 히사시 반도체 제조 장치
KR20080022044A (ko) * 2006-09-05 2008-03-10 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치
KR20090023076A (ko) * 2007-08-31 2009-03-04 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체

Also Published As

Publication number Publication date
TWI502673B (zh) 2015-10-01
CN103165411A (zh) 2013-06-19
JP5858770B2 (ja) 2016-02-10
TW201330153A (zh) 2013-07-16
KR20130070528A (ko) 2013-06-27
CN103165411B (zh) 2016-08-03
JP2013128063A (ja) 2013-06-27

Similar Documents

Publication Publication Date Title
KR101399801B1 (ko) 기판 처리 방법 및 기판 처리 시스템
KR101293809B1 (ko) 기판처리장치 및 기판처리방법
JP4907400B2 (ja) 基板処理装置及び基板処理方法
US20100210110A1 (en) Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device
JP2013128063A5 (ja)
CN1276271A (zh) 特超声清洗半导体晶片中的去离子水温控去气
JP5878051B2 (ja) 基板処理方法及び基板処理システム
JP6453724B2 (ja) 基板液処理方法及び基板液処理装置
US9859109B2 (en) Substrate processing apparatus, substrate processing method and computer-readable medium storing program
JP2005183791A (ja) 基板処理方法及びその装置
JP2008130835A (ja) 基板処理装置および基板処理方法
JP2007266495A (ja) 洗浄システム
JP6139634B2 (ja) 基板処理方法及び基板処理システム
JP6317801B2 (ja) 基板処理システム
JP2016021599A5 (ja)
JP2019220518A (ja) 基板処理装置および処理液再利用方法
JP3653416B2 (ja) エッチング方法およびエッチング装置
JP2000164550A (ja) 基板処理装置および基板処理方法
JP6292694B2 (ja) 基板処理方法及び基板処理システム
JP5024521B2 (ja) 高温高濃度過硫酸溶液の生成方法および生成装置
JP2016119359A (ja) 半導体基板の洗浄方法
JP6124981B2 (ja) 基板処理方法及び基板処理システム
JP2017063225A5 (ja) 基板処理システム
JP3663048B2 (ja) ウェット処理方法
JPH11251208A (ja) 基板処理装置および基板処理方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20180220

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20190213

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20200220

Year of fee payment: 7