KR101387067B1 - 드라이 에칭 장치 및 드라이 에칭 방법 - Google Patents

드라이 에칭 장치 및 드라이 에칭 방법 Download PDF

Info

Publication number
KR101387067B1
KR101387067B1 KR1020120078894A KR20120078894A KR101387067B1 KR 101387067 B1 KR101387067 B1 KR 101387067B1 KR 1020120078894 A KR1020120078894 A KR 1020120078894A KR 20120078894 A KR20120078894 A KR 20120078894A KR 101387067 B1 KR101387067 B1 KR 101387067B1
Authority
KR
South Korea
Prior art keywords
high frequency
bias
frequency bias
dry etching
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020120078894A
Other languages
English (en)
Korean (ko)
Other versions
KR20130100664A (ko
Inventor
마사히토 모리
마사루 이자와
가츠시 야기
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20130100664A publication Critical patent/KR20130100664A/ko
Application granted granted Critical
Publication of KR101387067B1 publication Critical patent/KR101387067B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020120078894A 2012-03-01 2012-07-19 드라이 에칭 장치 및 드라이 에칭 방법 Active KR101387067B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-045400 2012-03-01
JP2012045400A JP5808697B2 (ja) 2012-03-01 2012-03-01 ドライエッチング装置及びドライエッチング方法

Publications (2)

Publication Number Publication Date
KR20130100664A KR20130100664A (ko) 2013-09-11
KR101387067B1 true KR101387067B1 (ko) 2014-04-18

Family

ID=49042231

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120078894A Active KR101387067B1 (ko) 2012-03-01 2012-07-19 드라이 에칭 장치 및 드라이 에칭 방법

Country Status (4)

Country Link
US (2) US20130228550A1 (https=)
JP (1) JP5808697B2 (https=)
KR (1) KR101387067B1 (https=)
TW (1) TWI505354B (https=)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
US8883029B2 (en) * 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
WO2015129623A1 (ja) 2014-02-27 2015-09-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN112366128B (zh) * 2014-04-09 2024-03-08 应用材料公司 用于在处理腔室中提供对称的流动路径的流动模块
JP6244518B2 (ja) * 2014-04-09 2017-12-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20180047595A1 (en) * 2015-05-22 2018-02-15 Hitachi High-Technologies Corporation Plasma processing device and plasma processing method using same
US9666606B2 (en) 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2017126717A (ja) * 2016-01-15 2017-07-20 東京エレクトロン株式会社 載置台の表面処理方法、載置台及びプラズマ処理装置
CN107369604B (zh) * 2016-05-12 2019-10-11 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US10211522B2 (en) 2016-07-26 2019-02-19 Smartsky Networks LLC Density and power controlled plasma antenna
KR20180033995A (ko) 2016-09-27 2018-04-04 삼성전자주식회사 모니터링 유닛, 이를 포함하는 플라즈마 처리 장치 및 그를 이용한 반도체 칩의 제조 방법
CN108269726B (zh) * 2016-12-30 2021-06-29 中微半导体设备(上海)股份有限公司 等离子体刻蚀方法与等离子体刻蚀装置及其射频源系统
GB201705202D0 (en) * 2017-03-31 2017-05-17 Univ Dublin City System and method for remote sensing a plasma
US10504738B2 (en) * 2017-05-31 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for plasma etcher
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
JP6836976B2 (ja) * 2017-09-26 2021-03-03 東京エレクトロン株式会社 プラズマ処理装置
KR102003942B1 (ko) * 2017-11-07 2019-07-25 한국원자력연구원 정합 장치를 포함하는 플라즈마 발생 장치 및 임피던스 정합 방법
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102458733B1 (ko) 2018-01-09 2022-10-27 삼성디스플레이 주식회사 플라즈마 처리 장치
CN110323117B (zh) 2018-03-28 2024-06-21 三星电子株式会社 等离子体处理设备
US12456604B2 (en) * 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
CN109594062B (zh) * 2018-12-14 2021-05-18 拓荆科技股份有限公司 伴随射频导入的电加热喷淋板及其温控系统
KR102386601B1 (ko) 2019-04-22 2022-04-15 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
KR102285126B1 (ko) * 2019-07-29 2021-08-04 주식회사 히타치하이테크 플라스마 처리 장치
US11232931B2 (en) * 2019-10-21 2022-01-25 Mks Instruments, Inc. Intermodulation distortion mitigation using electronic variable capacitor
JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP7075540B1 (ja) * 2020-09-02 2022-05-25 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
EP3968353A1 (en) 2020-09-10 2022-03-16 Impedans Ltd Apparatus for ion energy analysis of plasma processes
WO2022146649A1 (en) * 2020-12-28 2022-07-07 Mattson Technology, Inc. Directly driven hybrid icp-ccp plasma source
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
JP7645732B2 (ja) * 2021-07-16 2025-03-14 東京エレクトロン株式会社 プラズマ処理装置及び処理方法
US20230083497A1 (en) * 2021-09-15 2023-03-16 Applied Materials, Inc. Uniform plasma linear ion source
JP7523553B2 (ja) 2021-10-21 2024-07-26 株式会社日立ハイテク エッチング方法およびエッチング装置
KR102660299B1 (ko) * 2021-12-29 2024-04-26 세메스 주식회사 기판 처리 장치, 고조파 제어 유닛 및 고조파 제어 방법
US12581881B2 (en) 2022-03-07 2026-03-17 Hitachi High-Tech Corporation Plasma processing method
KR102826180B1 (ko) 2022-04-26 2025-06-27 주식회사 히타치하이테크 플라스마 처리 방법
KR102815089B1 (ko) 2022-04-28 2025-06-04 주식회사 히타치하이테크 에칭 방법
US12142461B2 (en) * 2022-05-05 2024-11-12 Applied Materials, Inc. Control and prediction of multiple plasma coupling surfaces and corresponding power transfer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100004065A (ko) * 2008-07-02 2010-01-12 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
JP2011014579A (ja) 2009-06-30 2011-01-20 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
KR101110974B1 (ko) 2007-11-21 2012-02-15 도쿄엘렉트론가부시키가이샤 유도 결합 플라즈마 처리 장치 및 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122618B2 (ja) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US6136388A (en) * 1997-12-01 2000-10-24 Applied Materials, Inc. Substrate processing chamber with tunable impedance
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
JP4819244B2 (ja) * 2001-05-15 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP2005079416A (ja) 2003-09-02 2005-03-24 Hitachi Ltd プラズマ処理装置
CN1734712A (zh) * 2004-07-30 2006-02-15 东京毅力科创株式会社 等离子体处理装置以及等离子体处理方法
US20060037704A1 (en) * 2004-07-30 2006-02-23 Tokyo Electron Limited Plasma Processing apparatus and method
JP4699127B2 (ja) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4601439B2 (ja) * 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4628900B2 (ja) 2005-08-24 2011-02-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20080178803A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with ion distribution uniformity controller employing plural vhf sources

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101110974B1 (ko) 2007-11-21 2012-02-15 도쿄엘렉트론가부시키가이샤 유도 결합 플라즈마 처리 장치 및 방법
KR20100004065A (ko) * 2008-07-02 2010-01-12 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
JP2011014579A (ja) 2009-06-30 2011-01-20 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
TW201338034A (zh) 2013-09-16
JP5808697B2 (ja) 2015-11-10
TWI505354B (zh) 2015-10-21
US10090160B2 (en) 2018-10-02
KR20130100664A (ko) 2013-09-11
US20130228550A1 (en) 2013-09-05
US20160141183A1 (en) 2016-05-19
JP2013182996A (ja) 2013-09-12

Similar Documents

Publication Publication Date Title
KR101387067B1 (ko) 드라이 에칭 장치 및 드라이 에칭 방법
KR102195550B1 (ko) 플라즈마 처리 장치
TWI622081B (zh) 電漿處理裝置及電漿處理方法
CN101506950B (zh) 使用多频率rf功率的混合rf电容和电感耦合等离子源及其使用方法
KR101418438B1 (ko) 플라즈마 발생장치
CN1833296B (zh) 用于产生均匀处理速率的天线
JP2008147659A (ja) 弾道電子ビーム促進プラズマ処理システムにおける均一性制御方法及びシステム
TW201916158A (zh) 電漿處理裝置及電漿處理方法
JP2016031955A (ja) プラズマ処理装置およびプラズマ処理方法
KR102207755B1 (ko) 플라스마 처리 장치
US20250118538A1 (en) Remote plasma source
CN115565840B (zh) 一种等离子体处理装置及处理方法
JP2017069209A (ja) プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20170322

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20180316

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20190319

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 13