KR101362081B1 - Light emitting device - Google Patents

Abstract

A light emitting device according to the embodiment of the present invention includes: a light transmitting substrate; a plurality of semiconductor layers which are arranged under the light transmitting substrate and include a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type which is arranged under the first semiconductor layer, and an active layer which is arranged between the first semiconductor layer and the second semiconductor layer; a reflection electrode layer which is arranged under the second semiconductor layer; at least one first hole which is formed from the reflection electrode layer to a part of the first semiconductor layer; a first insulation layer which is arranged under the reflection electrode layer and includes an extension part which is extended to at least one first hole; a first electrode which is arranged under the first insulation layer and includes a connection part which is connected to the first semiconductor layer in the extension part of the first insulation layer; a second electrode which is arranged under the first insulation layer and is connected to the reflection electrode layer; and a second insulation layer which is arranged between the first electrode and the second electrode. The first insulation layer and the extension part of the first insulation layer include layers to reflect light emitted from the active layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

A semiconductor light emitting device is a device in which a material contained in the device emits light. For example, the semiconductor light emitting device is formed by bonding a semiconductor using a diode such as a light emitting device (LED), and thus is different from electron / hole recombination. It is a device that converts energy into light and emits it. Such semiconductor devices have been commercially used in blue LEDs, green LEDs, ultraviolet LEDs, and the like, and are used as light sources such as lighting, display devices, and indicator devices.

The semiconductor junction light emitting device includes a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and includes a vertical chip, a horizontal chip, and the like according to the electrode structure connected to the semiconductor layer. There is a flip chip.

In the case of the horizontal light emitting device, the manufacturing process is simple and easy to manufacture, but there is a problem in manufacturing a high output device due to the current concentration phenomenon and the weak heat dissipation structure. In the case of the vertical light emitting device, the heat dissipation structure is superior to the horizontal light emitting device, but the manufacturing process is complicated. The flip chip light emitting device of the prior art has all the advantages of the horizontal and vertical light emitting devices, but there are difficulties in the manufacturing method and the assembly process.

Information of the prior art document of the present invention is as follows.
The name of the invention in the prior art document is a contact for a semiconductor light emitting device, the domestic publication number is 10-2010-0099286, the publication date is September 10, 2010.

The embodiment provides a light emitting device having a new electrode structure.

The embodiment provides a light emitting device having a new electrode structure and a reflective structure.

The embodiment provides a light emitting device having improved reliability and a method of manufacturing the same.

The embodiment provides a light emitting device having improved light extraction efficiency and a method of manufacturing the same.

The embodiment provides a light emitting device having improved heat dissipation efficiency and a method of manufacturing the same.

The light emitting device according to the embodiment, the light-transmissive substrate; A first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type under the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer A plurality of semiconductor layers comprising; A reflective electrode layer disposed under the second semiconductor layer; At least one first hole formed from the reflective electrode layer to a part of the first semiconductor layer; A first insulating layer disposed below the reflective electrode layer and having an extension part extending in the at least one first hole; A first electrode disposed under the first insulating layer and having a connection portion connected to the first semiconductor layer in an extension of the first insulating layer; A second electrode disposed under the first insulating layer and connected to the reflective electrode layer; And a second insulating layer disposed between the first and second electrodes, wherein the first insulating layer and the extension portion of the first insulating layer include a layer reflecting light emitted from the active layer.

The embodiment can provide a light emitting device having a new electrode structure, a light emitting device manufacturing method, and a light emitting device package.

The embodiment can provide a light emitting device having improved reliability and a method of manufacturing the same.

The embodiment can provide a light emitting device capable of improving light extraction efficiency and a method of manufacturing the same.

The embodiment provides a light emitting device having improved heat dissipation efficiency and a method of manufacturing the same.

1 is a side sectional view showing a light emitting device according to the first embodiment.
2 is a bottom view of the light emitting device of FIG. 1.
3 is a diagram illustrating an example of a reflective electrode layer of the light emitting device of FIG. 1.
4 is a diagram illustrating another example of the reflective electrode layer of the light emitting device of FIG. 1.
5 is a diagram illustrating an example of a first insulating layer of the light emitting device of FIG. 1.
6 is a diagram illustrating still another example of the first insulating layer of the light emitting device of FIG. 1.
7 is a view illustrating a first electrode of the light emitting device of FIG. 1.
8 is a view illustrating a second electrode of the light emitting device of FIG. 1.
9 is a view illustrating a first pad and a second pad of the light emitting device of FIG. 1.
FIG. 10 is a view illustrating a second insulating layer of the light emitting device of FIG. 1.
11 is a side sectional view showing a light emitting device according to the second embodiment.
12 is a cross-sectional view taken along the AA side of the light emitting device of FIG. 11.
13 is a side cross-sectional view of a light emitting device according to a third embodiment.
14 is a side cross-sectional view of a light emitting device according to the fourth embodiment.
15 is a side cross-sectional view of a light emitting device according to a fifth embodiment.
16 is a side cross-sectional view of a light emitting device according to the sixth embodiment.
17 is a side cross-sectional view of a light emitting device according to a seventh embodiment.
18 is a side cross-sectional view of a light emitting device according to an eighth embodiment.
19 is a side cross-sectional view of a light emitting device according to the ninth embodiment.
20 is a side cross-sectional view of a light emitting device according to a tenth embodiment.
21 is a side cross-sectional view of a light emitting module having a light emitting device according to the embodiment.
22 is a view showing a light emitting module showing an arrangement of a light emitting device according to the embodiment.
23 is a side cross-sectional view showing a light emitting device package having a light emitting device according to the embodiment.
24 is a graph comparing light output according to input currents of Comparative Examples and Experimental Examples.
FIG. 25 is a diagram comparing DST values according to whether a first pad and a second pad of a light emitting device according to an embodiment are applied.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Embodiments disclosed below will be described with reference to the accompanying drawings. 1 is a side cross-sectional view of a light emitting device according to a first embodiment, and FIG. 2 is a bottom view of the light emitting device of FIG. 1.

1 and 2, the light emitting device 100 includes a substrate 111, a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, a first electrode 151, and a first electrode. The second electrode 171 includes a second insulating layer 191, a first pad 161, and a second pad 181.

The substrate 111 is a light transmissive substrate and includes at least one of a sapphire substrate, a compound semiconductor substrate such as GaN, silicon carbide (SiC), and silicon (Si). The transmittance of the substrate 111 may have a transmittance of 80% or more of the wavelength emitted from the active layer 123. The substrate 111 may have insulating or conductive characteristics, but is not limited thereto.

A first light extracting structure 112, such as a concave-convex pattern, may be formed on an upper surface of the substrate 111, and the first light extracting structure 112 may change a critical angle of incident light to improve light extraction efficiency. It includes a structure, for example, the above-mentioned concave-convex pattern may be formed in a regular pattern or an irregular pattern. The first light extracting structure 112 may not be formed. The iron pattern may include at least one of a hemispherical shape, a polygonal shape, and an irregular shape. A second light extracting structure (not shown), such as an uneven pattern, may be formed on the bottom surface of the substrate 111. The second light extracting structure may include a plurality of iron patterns protruding in a direction upward or opposite to the substrate 111, and the iron patterns may include at least one of a hemispherical shape, a polygonal shape, and an irregular shape. can do. At least one of the first and second light extraction structures may be formed by etching the substrate 111 or may be formed of a separate material. The embodiment will be described as an example in which at least one of the first and second light extraction structures is formed from the substrate 111.

The substrate 111 may be a growth substrate, and is a member on which the plurality of semiconductor layers 120 may be grown by semiconductor growth equipment.

A plurality of semiconductor layers 120 are formed on the bottom surface of the substrate 111, and the plurality of semiconductor layers 120 includes a first semiconductor layer 121, an active layer 123, and a second semiconductor layer 125. do. The plurality of semiconductor layer 120 includes a Group III -V compound semiconductor, for example, _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y It has a semiconductor which has a composition formula of (1), and can emit a predetermined peak wavelength within the wavelength range of an ultraviolet band to a visible light band. The first semiconductor layer 121 includes a first conductive semiconductor layer, and the second semiconductor layer 125 includes a second conductive semiconductor layer having a polarity opposite to that of the first conductive type.

The first semiconductor layer 121 may be formed using a group II to group VI compound semiconductor. The first semiconductor layer 121 may be formed of at least one layer or a plurality of layers using a group II to group VI compound semiconductor. The first semiconductor layer 113 may include, for example, at least one of a semiconductor layer using a group III-V compound semiconductor, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN.

The first semiconductor layer 121 may be formed as a buffer layer, and the buffer layer may reduce the difference in lattice constant between the substrate 111 and the nitride semiconductor layer. In addition, the first semiconductor layer 121 may be formed of an undoped semiconductor layer. The undoped semiconductor layer may be implemented as a group III-V compound semiconductor, for example, a GaN-based semiconductor. The first semiconductor layer 121 may be formed of at least one of a buffer layer and an undoped semiconductor layer, but is not limited thereto.

The first semiconductor layer 121 may include a first conductive semiconductor layer. The first conductive semiconductor layer may be formed of any one of group III-V compound semiconductors doped with n-type dopants, such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The n-type semiconductor layer can be for example formed of a semiconductor having a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The first semiconductor layer 121 is formed of a first conductive semiconductor layer under the substrate 111, a buffer layer / first conductive semiconductor layer, or an undoped semiconductor layer / first conductive semiconductor layer. Or a buffer layer / undoped semiconductor layer / first conductive semiconductor layer.

In addition, the first semiconductor layer 121 may have a super lattice structure in which different semiconductor layers are alternately stacked, and the super lattice structure may reduce lattice defects.

A first conductive clad layer may be formed between the first semiconductor layer 121 and the active layer 123. The first conductive clad layer may be formed of a GaN-based semiconductor, and the band gap may be formed to be greater than or equal to the band gap of the active layer 123. The first conductive type cladding layer serves to constrain the carrier.

An active layer 123 is formed under the first semiconductor layer 121. The active layer 123 optionally includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure, and includes a period of the well layer and the barrier layer. The well layer includes a composition formula of In _x Al _y Ga _{1 -x- y} N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and the barrier layer is In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) may be included. The period of the well layer / barrier layer may be formed in one or more cycles using, for example, a stacked structure of InGaN / GaN, GaN / AlGaN, InGaN / AlGaN, InGaN / InGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than a band gap of the well layer.

A second semiconductor layer 125 is formed below the active layer 123. The second semiconductor layer 125 may be formed of any one of semiconductors doped with p-type dopants, for example, compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The semiconductor layer is a p-type dopant is doped, for example formed of a semiconductor having a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be.

The second semiconductor layer 125 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second semiconductor layer 125 may abnormally diffuse the current included in the voltage to protect the active layer 123.

As another example of the plurality of semiconductor layers 120, the first semiconductor layer 121 may be a p-type semiconductor layer, and the second semiconductor layer 125 may be an n-type semiconductor layer. In addition, the plurality of semiconductor layers 120 may be formed as a junction structure of an n-type semiconductor layer / p-type semiconductor layer / n-type semiconductor layer or a junction structure of a p-type semiconductor layer / n-type semiconductor layer / p-type semiconductor layer. The active layer 123 may be disposed in one or a plurality thereof.

The reflective electrode layer 131 is formed under the second semiconductor layer 125. The reflective electrode layer 131 is in contact with the second semiconductor layer 125 and serves as an electrode and reflects light. For example, the reflective electrode layer 131 reflects light incident through the second semiconductor layer 125. In addition, the reflective electrode layer 131 reflects the light incident to the side and the bottom. The reflective electrode layer 131 reflects light from both sides, that is, the upper and lower surfaces. The reflective electrode layer 131 includes a material having a reflectance of 70% or more, for example, 90% or more with respect to light emitted from the active layer 123.

The upper surface area of the reflective electrode layer 131 may be the same as or similar to that of the lower surface of the second semiconductor layer 125. As another example, the reflective electrode layer 131 may have an upper surface area that is larger than the lower surface area of the second semiconductor layer 125. The reflective electrode layer 131 may increase light reflection to improve light extraction efficiency.

The reflective electrode layer 131 is in contact with the second semiconductor layer 125 to diffuse an input current. The reflective electrode layer 131 may include protrusions that are in contact with the second semiconductor layer 125 in different regions, but is not limited thereto.

A first insulating layer 141 is disposed below the reflective electrode layer 131, and the first insulating layer 141 includes an insulating material having a reflectance of 70% or more with respect to light emitted from the active layer 123. do. The first insulating layer 141 may reflect light exposed to a region where the reflective electrode layer 131 is not formed. The first insulating layer 141 includes a multi-layer, and at least one layer is a compound, a mixture, or a metal component containing at least one of Si, Mg, Ti, Al, Zn, C, In, and Sn. At least one of oxides, fluorides, sulfides and nitrides containing the component. The first insulating layer 141 may have a structure of a distributed bragg reflector (DBR) or an omni directional reflector (ODR).

The first insulating layer 141 has a reflective layer therein, and reflects the light traveling in the light emitting device together with the reflective electrode layer 131, thereby maximizing light extraction efficiency.

Here, the first hole 127 is formed to a part of the reflective electrode layer 131, the second semiconductor layer 125, the active layer 123, and the first semiconductor layer 121, and the first semiconductor layer. Expose a portion of 121. One or more first holes 127 may be formed.

The width of the first hole 127 may be the widest in the reflective electrode layer 131 and the narrowest in the first semiconductor layer 121. As another example, the first hole 127 may be formed to have the same width from the reflective electrode layer 131 to the first semiconductor layer 121. Accordingly, the first hole 127 may include a surface inclined with respect to the optical axis with a vertical circumference. The first hole 127 may include a circular shape or a polygonal shape when viewed from above, but is not limited thereto.

Since the first hole 127 is formed to a part of the first semiconductor layer 121, the first conductive semiconductor layer may be exposed. An extension part 143 of the first insulating layer 141 extends in the first hole 127. The extension 143 of the first insulating layer 141 has a third hole 148 around the first hole 127 and is a part of the first semiconductor layer 121, that is, a first conductive semiconductor. Expose the layer. A connection part 153 of the first electrode 151 is disposed in the third hole 148 of the first insulating layer 141, and the connection part 153 of the first electrode 151 is the first semiconductor layer. Contact portion 155 in contact with 121. The extension 143 of the first insulating layer 141 reflects light incident in the plurality of semiconductor layers 120, thereby reducing light absorption at the connection 153 of the first electrode 151. And light extraction efficiency can be increased. In addition, the extension 143 of the first insulating layer 141 may be formed as an inclined surface in the first hole 127, thereby improving the light extraction efficiency.

Second holes 147 may be formed in the first insulating layer 141, and one or more second holes 147 may be formed to expose a portion of the reflective electrode layer 131.

The first electrode 151 and the second electrode 171 are spaced apart from each other under the first insulating layer 141. The connection part 153 of the first electrode 151 protrudes from the bottom of the first insulating layer 141 toward the first semiconductor layer 121, and has a third hole () of the first insulating layer 141. It extends through 148 and is in contact with the first semiconductor layer 121.

The second electrode 171 is disposed under the first insulating layer 141, and a portion 173 is in contact with the reflective electrode layer 131 through the second hole 147. The contact point between the second electrode 171 and the reflective electrode layer 131 may be one or plural, but is not limited thereto.

A first pad 161 is formed under the first electrode 151, and a second pad 181 is formed under the second electrode 171. The first pad 161 and the second pad 181 are spaced apart from each other. The first pad 171 and the second pad 181 may be formed in plural instead of one, but are not limited thereto. The first pad 161 and the second pad 181 are bonding pads and may be mounted on a lead frame on a module substrate or a package. The heat dissipation efficiency of the first pad 161 and the second pad 181 may vary depending on the area, and as shown in FIG. 2, 50% of the length Y1 of the second direction of the light emitting device is, for example, 70. It may be formed to a length (Y2) or more than%. The length of the second direction of the light emitting device may be defined as the length of the second direction of the upper surface of the substrate 111 or the upper surface of the plurality of semiconductor layers 120. The first pad 161 or the second pad 181 may have a length X1 in the first direction of 25% or more, for example, 30% or more of the lengths X2 and X3. The length X2 of the first direction of the first pad 161 may be shorter, equal to, or longer than the length X3 of the first direction of the second pad 181, but is not limited thereto.

In addition, the sum of the lower surface areas of the first pad 161 and the second pad 181 is 50% or more of the lower surface area of the light emitting device, that is, the upper surface area of the substrate 111 or the upper surface of the plurality of semiconductor layers 120. It may be formed in the range of 70% to 95% of the area. By increasing the total area of the first pad 161 and the second pad 181, the heat radiation efficiency of the light emitting device can be improved. The first pad 161 and the second pad 181 may improve the bonding performance of the solder during soldering bonding, or may be bonded to the bump ball in the case of bump bonding.

A second insulating layer 191 is disposed below the first electrode 151 and the first electrode 151, and the second insulating layer 191 is formed of the first electrode 151 and the second electrode ( It protects the surface of 171 and electrically insulates the first and second electrodes 151 and 171. In addition, the second insulating layer 191 protects and electrically insulates the first pad 161 and the second pad 181.

The second insulating layer 191 prevents oxidation of the first electrode 151, the second electrode 171, the first pad 161, and the second pad 181, and provides different polarities. Insulation. A portion 193 of the second insulating layer 191 may be disposed between the first electrode 151 and the second electrode 171 and may be in contact with the first insulating layer 141. The material of the second insulating layer 191 is at least one of a compound, a mixture, and an oxide including a metal component having at least one of Si, Ti, Al, Mg, Zn, In, Sn, and C, or the metal component At least one of fluoride, sulfide, and nitride forms having, for example, at least one of oxide, nitride, and fluoride containing the metal component. The thickness of the second insulating layer 191 is in the range of 100 kPa to 20,000 kPa, and the preferred thickness is 2,000 kPa to 10,000 kPa.

The first pad 161 and the second pad 181 may protrude downwardly from the second insulating layer 191. Such a structure may improve adhesion to a bonding material on a module substrate or a lead frame. Can give Alternatively, the first pad 161 and the second pad 181 may be buried in the second insulating layer 191, and this structure may improve the insulation characteristics of the flip chip. When the first pad 161 and the second pad 181 are embedded in the second insulating layer 191, the bottom surface of the first pad 161 and the second pad 181 may be the second pad. It may be exposed on the same plane as the insulating layer 191.

As another example, the second insulating layer 191 may include a reflective material, and the reflective material may have a reflectance of 70% or more with respect to light incident from the periphery of the light emitting device.

According to an embodiment, the reflective electrode layer 131 and the first insulating layer 141 may be provided as reflective properties, and thus, an extension portion of the reflective electrode layer 131 and the first insulating layer 141 may be formed through the semiconductor layers 120. 143 may reflect the incident light. Accordingly, the light reflection efficiency in the plurality of semiconductor layers 120 may be increased.

3 and 4 illustrate examples of the reflective electrode layer of the light emitting device of FIG. 1.

Referring to FIG. 3, the reflective electrode layer 131 may be formed in multiple layers. The reflective electrode layer 131 may be formed of five or more conductive layers, for example, nine or more conductive layers.

The reflective electrode layer 131 includes an ohmic contact layer 31, a first reflection layer 32, a first barrier layer 33, a first protective layer 34, a first adhesive layer 35, and a second barrier layer 36. ), A second adhesive layer 37, a second reflective layer 38, and a second protective layer 39.

The ohmic contact layer 31 is adhered between the first reflective layer 32 and the second semiconductor layer 125 and is in ohmic contact with the bottom surface of the second semiconductor layer 125. The material of the ohmic contact layer 31 may be a metal component having at least one of C, ITO, Ni, Cr, Cu, Co, Fe, In, Sn, Zn, and Pd, or a compound, mixture, or oxide having the metal component. At least one of the. The thickness of the ohmic contact layer 31 may include a range of 1 kPa to 500 kPa, preferably 5 kPa to 50 kPa, and this thickness range may lower the ohmic adhesion resistance.

The ohmic contact layer 31 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and IGTO (IGTO). indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SnO, InO, INZnO, ZnO, IrOx, RuOx, NiO, Ni, Cr and their optional compounds Or an alloy.

The first reflection layer 32 is disposed under the ohmic contact layer 31 and reflects light incident through the plurality of semiconductor layers 120. The material of the first reflective layer 32 is a metal component having at least one of Ag, Al, Pt, Ru, Rh, and Pd, or includes at least one of a compound, a mixture, and an oxide containing the metal component. The first reflection layer 32 is a metal or a metal alloy, the thickness thereof is in the range of 1,000 kPa to 10,000 kPa, and preferably may be in the range of 1,000 kPa to 5,000 kPa.

The first barrier layer 33 may be formed of a material different from that of the first reflection layer 32. The first barrier layer 33 may prevent the material of the first reflection layer 32 from reacting with another layer to prevent the light reflectivity from decreasing. do. The material of the first barrier layer 33 is a metal component having at least one of Ni, Mo, Co, Ta, Ti, W, Pt, and Hf, or at least one of a compound, a mixture, and an oxide containing the metal component. It may include. The thickness of the first barrier layer 33 is in the range of 100 kPa to 10,000 kPa, preferably 500 kPa to 3,000 kPa.

The first protective layer 34 is a layer for protecting the first barrier layer 33 and is disposed between the first barrier layer 33 and the first adhesive layer 35. The material of the first protective layer 34 may be a metal component having at least one of Au, Pt, Pd, Rh, and Ru, or may include at least one of a compound, a mixture, and an oxide containing the metal component. The thickness can range from 100 kPa to 10,000 kPa, for example, the thickness can range from 100 kPa to 2,000 kPa. The first protective layer 34 may not be formed, but is not limited thereto. When the first protective layer 34 is not formed, the first barrier layer 33 may be in contact with the first adhesive layer 35 or the second barrier layer 36.

The first adhesive layer 35 is disposed between the first protective layer 34 and the second barrier layer 36 to function as a layer to strengthen the adhesion between each other, the material is Ti, Ni, Co, Rh, A metal component having at least one of Cr or at least one of a compound, a mixture, and an oxide containing the metal component. The thickness of the first adhesive layer 35 is in the range of 50 kPa to 10,000 kPa, preferably in the range of 100 kPa to 1,000 kPa. The first adhesive layer 35 may not be formed, but is not limited thereto.

The second barrier layer 36 is a layer that prevents the material of the second reflective layer 38 from reacting with other materials to reduce the reflectivity. The material of the second barrier layer 36 is a metal component having at least one of Ni, Mo, Co, Ta, Ti, W, Pt, and Hf, or at least one of a compound, a mixture, and an oxide containing the metal component. It may include. The second barrier layer 36 is formed to have a thickness in the range of 100 kPa to 10,000 kPa, and preferably includes a thickness in the range of 500 kPa to 3,000 kPa.

The second adhesive layer 37 attaches the second barrier layer 36 and the second reflective layer 38 to each other. The material of the second adhesive layer 37 may be a metal component having at least one of Ti, Ni, Co, Rh, and Cr, or may include at least one of a compound, a mixture, and an oxide containing the metal component. The thickness of the second adhesive layer 37 is in the range of 50 kPa to 10,000 kPa, and the preferred thickness is in the range of 100 kPa to 1,000 kPa.

The second reflection layer 38 serves to reflect light incident from the outside. The material of the second reflective layer 38 may be a metal component having at least one of Ag, Al, Pt, Ru, Rh, and Pd, or may include at least one of a compound, a mixture, and an oxide included in the metal component. The thickness of the second reflective layer 38 is in the range of 1,000 kPa to 10,000 kPa, and the thickness thereof includes a thickness in the range of 1,000 kPa to 5,000 kPa.

The second protective layer 39 is a layer for protecting the second reflective layer 38. The material of the second protective layer 39 is a conductive component having at least one of C, ITO, In, Sn, Si, Mg, Ti, and Zn, or a compound, mixture, oxide, fluoride, or sulfide containing the conductive component. And at least one of nitride. The thickness of the second protective layer 39 is in the range of 10 kPa to 10,000 kPa, preferably in the range of 10 kPa to 2,500 kPa.

The reflective electrode layer 141 may include the first reflection layer 32 and the second reflection layer 38 to effectively reflect light incident in opposite directions.

4 is another example of the reflective electrode layer of the light emitting device of FIG. 1.

Referring to FIG. 4, the reflective electrode layer 131 includes a first reflection layer 133, a barrier layer 135, and a second reflection layer 137. The first reflection layer 133 is disposed between the second semiconductor layer 125 and the barrier layer 137 and reflects light incident through the plurality of semiconductor layers 120. The barrier layer 137 is disposed between the first reflective layer 133 and the second reflective layer 137 and blocks the interference between the first and second reflective layers 133 and 137. The second reflection layer 137 may be disposed between the barrier layer 137 and the first insulating layer 141. The first reflection layer 133 and the second reflection layer 137 includes a metal component having at least one of Ag, Al, Pt, Ru, Rh, Pd, the thickness of which is in the range of 1,000 ~ 5,000 Å Include. The barrier layer 135 may be a metal component having at least one of Ni, Mo, Co, Ta, Ti, W, Pt, and Hf, or may include at least one of a compound, a mixture, and an oxide including the metal component. . The barrier layer 135 may have a thickness in the range of 500 kV to 3,000 kPa.

The reflective electrode layer 131 effectively absorbs light incident through the plurality of semiconductor layers 120 by the first reflection layer 133 and the second reflection layer 137 or light incident through the first insulating layer 141. Can be reflected. Accordingly, the light extraction efficiency can be improved.

5 is a diagram illustrating an example of a first insulating layer of the light emitting device of FIG. 1.

Referring to FIG. 5, the first insulating layer 141 may include a multilayer, and the material may include oxides, fluorides, at least one of Si, Mg, Ti, Al, Zn, C, In, and Sn. At least one of sulfide and nitride. Since the first insulating layer 141 is formed to reflect light by itself, it is not necessary to further form a separate reflective layer on the surface of the connection portion 153 of the first electrode 151.

The first insulating layer 141 may include a low refractive index layer 41 and a high refractive index layer 42 having different refractive indices, and the low refractive index layer 41 may be disposed above or below the high refractive index layer 42. Can be. The periods of the low refractive layer 41 and the high refractive layer 42 are repeatedly stacked. The difference between the first index of refraction of the low refractive index layer 41 and the second index of refraction of the high refractive index layer 42 may have a difference of 0.1 or more, and the greater the difference in refractive index, the greater the reflectivity of the first insulating layer 141. Can be. The thickness of each layer 41 and 42 of the first insulating layer 141 may be determined as 1 / (4n) * λ, where n is a refractive index of each layer and λ is emitted from the active layer 123. It is the wavelength of light. The stacking period of the low refractive layer 41 and the high refractive layer 42 of the first insulating layer 141 includes 8 cycles or less, for example, 2 to 8 cycles. The first insulating layer 141 has a large refractive index difference among materials having at least one of oxides, fluorides, sulfides, and nitrides containing at least one of Si, Mg, Ti, Al, Zn, C, In, and Sn. The two layers can be arranged alternately.

6 is a diagram illustrating another example of the first insulating layer of the light emitting device of FIG. 1.

Referring to FIG. 6, the first insulating layer 141 includes a low refractive layer 46, a reflective layer 47, an antioxidant layer 48, and a stress relaxation layer 49, and the low refractive layer 46 ) Includes a dielectric thin film having a lower refractive index than the other layers 47-49. The dielectric thin film includes an insulating material having a refractive index of 2 or less. The low refractive index layer 46 of the first insulating layer 141 is an insulating material, and the material includes Si, Ti, Mg, Al, Zn, In, Sn, and C, including oxides, fluorides, sulfides, and nitrides. At least one. The low refractive index layer 46 is in the range of 10 kV to 1,000 kV, and preferably includes 10 kV to 500 kV.

The reflective layer 47 is disposed below the low refractive layer 46 and functions as a reflective layer, and the material is a metal component of a metal or an alloy having at least one of Ag, Al, Pt, Ru, Rh, Pd, or At least one of an oxide, a compound, a mixture, and an oxide having a metal component. For example, the reflective layer 47 is formed of a reflective metal layer. The thickness of the reflective layer 47 includes a range of 1,000 kPa to 10,000 kPa, and the thickness of the reflective layer 47 includes a range of 1,000 kPa to 5,000 kPa.

The antioxidant layer 48 prevents oxidation of the metal of the reflective layer 47 and electrically insulates it. The material of the anti-oxidation layer 48 includes at least one of oxides, fluorides, sulfides, and nitrides containing Si, Ti, Mg, Al, Zn, In, Sn, and C, and the thickness thereof is in the range of 100 kPa to 20,000 kPa. The preferred thickness is in the range of 2,000 kPa to 10,000 kPa.

The stress relief layer 49 is a layer for relieving stress that may occur in the antioxidant layer 48, and may be formed of a material different from that of the antioxidant layer 48. The material of the stress mitigating layer 49 is a compound or mixture containing at least one metal component of Si, Ti, Mg, Al, Zn, In, Sn, C, oxides, fluorides, At least one of sulfide and nitride, the thickness of which is in the range of 100 kPa to 20,000 kPa, and preferably in the range of 2,000 kPa to 10,000 kPa. The stress relief layer 49 may not be formed.

7 and 8 illustrate examples of the first electrode and the second electrode 171 of the light emitting device of FIG. 1.

7 and 8, the first electrode 151 includes a plurality of conductive layers, for example, five or more conductive layers. For example, the first electrode 151 includes first to eighth conductive layers 51-58, and the first conductive layer 51 is in ohmic contact with the first semiconductor layer 121. It serves as an adhesive for attaching the electrode 151 to the first insulating layer 141. The material of the first conductive layer 151 includes at least one metal of ITO, Ni, Cr, Ti, Hf, Rh, W, Zr, V, Cu, Co, Fe, In, Sn, Zn, Pd or It may include at least one of a compound, a mixture, an oxide, and a nitride including the metal component. The thickness of the first conductive layer 151 is in the range of 1 kPa to 2,000 kPa, and preferably includes 50 kPa to 1,000 kPa.

The second conductive layer 52 is a barrier layer or a diffusion barrier layer, and prevents diffusion between the first conductive layer 51 and the third conductive layer 53. The material of the second conductive layer 52 is a metal including at least one of Ni, Mo, Co, Ta, Ti, W, Pt, and Hf, or at least one of a compound, a mixture, and an oxide containing the metal component. Include. The second conductive layer 52 has a thickness in the range of 100 kPa to 10,000 kPa, and the preferred thickness is in the range of 500 kPa to 3,000 kPa.

When the third conductive layer 53 is bonded to the solder on the module substrate or the lead frame, the third conductive layer 53 serves as an electrical wiring layer serving as an under bump metal (UBM). The material of the third conductive layer 53 may be a metal including at least one of Cu, W, Mo, Ta, Zr, and C, or a compound, a mixture, or a carbide containing the metal component. The thickness of the third conductive layer 53 may be formed in the range of 2,000 kPa to 50,000 kPa, and the preferred thickness may be formed in the range of 8,000 kPa to 20,000 kPa.

The fourth conductive layer 54 serves as a barrier to prevent the electrical resistance from increasing by preventing diffusion of the third conductive layer 53. The material of the fourth conductive layer 54 may be a metal having at least one of Ti, Ni, W, Mo, Ta, and Zr, or may include at least one of a compound, a mixture, and a carbide including the metal component. The thickness of the fourth conductive layer 54 is in the range of 100 kPa to 10,000 kPa, and the preferred thickness includes the range of 200 kPa to 4,000 kPa.

The fifth conductive layer 55 is an adhesive layer for bonding the fourth conductive layer 54 and the first insulating layer 141, and the material is Ti, Ni, Cr, Hf, Rh, W, Zr, V, Cu. At least one of a metal having at least one of Co, Fe, In, Sn, and Zn or a compound including the metal component, and a mixture. The thickness of the fifth conductive layer 55 is in the range of 1 kPa to 1,000 kPa, and the preferred thickness is in the range of 10 to 300 kPa.

The sixth conductive layer 56 is a layer bonding the fifth conductive layer 55 and the seventh conductive layer 57 to each other, and the material is Ni, Cr, Ti, Hf, Rh, W, Zr, V, Cu. Or a metal having at least one of Co, Fe, In, Sn, Zn, and Pd, or at least one of a compound and a mixture containing the metal component. The thickness of the sixth conductive layer 56 is in the range of 1 kPa to 2,000 kPa, and the preferred thickness is 50 kPa to 1,000 kPa.

The seventh conductive layer 57 is a barrier layer or a diffusion barrier layer that prevents the sixth conductive layer 56 and the eighth conductive layer 58 from diffusing to each other. The material of the seventh conductive layer 57 is a metal having at least one of Ni, Mo, Co, Ta, Ti, W, Pt, Pd, and Hf, or at least one of a compound, a mixture, and a carbide containing the metal component. It includes. The thickness of the seventh conductive layer 57 is in the range of 1,000 kPa to 30,000 kPa, and the preferred thickness is in the range of 1,000 kPa to 3,000 kPa.

The eighth conductive layer 58 may be an antioxidant layer that prevents oxidation of the seventh conductive layer 57. The material of the eighth conductive layer 58 is a metal having at least one of Ag, Au, Pd, Sn, In, and Cu, or includes at least one of a compound, a mixture, and a carbide containing the metal component. The eighth conductive layer 58 has a thickness in the range of 1,000 kPa to 30,000 kPa, and the preferred thickness is in the range of 1,000 kPa to 20,000 kPa. When the first pad 161 is not formed, the eighth conductive layer 58 may function as a bonding layer.

As illustrated in FIG. 8, the second electrode 171 includes a plurality of conductive layers, and the plurality of conductive layers include five or more conductive layers, for example, first to eighth conductive layers 71-78. The first to eighth conductive layers 71-78 will be referred to the configuration of FIG. 7, and detailed description thereof will be omitted. The second electrode 171 may have the same stacked structure as the first electrode 151, but is not limited thereto.

The second electrode 171 may be disposed between the first insulating layer 141 and the second pad 181. When the second pad 181 is not formed, the eighth conductive layer 78 may be disposed. It functions as the second pad 181.

9 is a view illustrating a first pad and a second pad of the light emitting device of FIG. 1.

Referring to FIG. 9, the first pad 161 includes first to fifth conductive layers, for example, an adhesive layer 61, a first diffusion barrier layer 62, a bonding layer 63, and a second diffusion barrier layer 64. ), And a coral barrier layer 65.

The adhesive layer 81 serves as a layer for bonding the eighth conductive layer 58 and the first pad 161 of the first electrode 151 to each other. The material of the first adhesive layer 81 is a metal having at least one of Ni, Cr, Ti, Hf, Rh, W, Zr, V, Cu, Co, Fe, In, Sn, Zn, Pd, or the metal component It contains at least one of the compound, mixture, oxide, nitride contained. The thickness of the first adhesive layer 81 is formed in the range of 1Å ~ 2,000Å, the preferred thickness may be in the range of 50Å ~ 1,000Å.

The first diffusion barrier layer 62 serves to prevent the adhesive layer 61 and the bonding layer 63 from diffusing to each other, and may be defined as a barrier layer. The material of the first diffusion barrier layer 62 is a metal having at least one of Ni, Mo, Co, Ta, Ti, W, Pt, and Hf, or includes at least one of a compound, a mixture, and an oxide containing the metal component. can do. The thickness of the first diffusion barrier layer 62 may be formed in the range of 100 kPa to 10,000 kPa, and the preferred thickness may be in the range of 500 kPa to 3,000 kPa.

The bonding layer 63 serves as an under bump metal (UBM) when soldering as a wiring layer. The material of the bonding layer 63 is a metal having at least one of Cu, W, Mo, Ta, Zr, and C, or includes at least one of a compound, a mixture, and a carbide containing the metal component. The bonding layer 63 may have a thickness of 2,000 to 50,000 kPa, and the preferred thickness is 8,000 to 20,000 kPa.

The second diffusion barrier layer 64 prevents diffusion of the bonding layer 63 to prevent an increase in electrical resistance, and the material is a metal having at least one of Ti, Ni, W, Mo, Ta, and Zr. , At least one of a compound, a mixture, and a carbide containing the metal component. The thickness of the second diffusion barrier layer 64 may range from 100 kPa to 10,000 kPa, and the preferred thickness may range from 200 kPa to 4,000 kPa.

The anti-oxidation layer 65 prevents oxidation of the second diffusion prevention layer 64, secures wettability during soldering, and is bonded to the bump ball in the case of ball bonding. The material of the anti-oxidation layer 65 is a metal having at least one of Ag, Au, Pd, Sn, In, Cu, or at least one of a compound, a mixture, and a carbide containing the metal component. The antioxidant layer 65 may have a thickness in the range of 1,000 kPa to 30,000 kPa, and a preferred thickness may range from 1,000 kPa to 20,000 kPa.

The second pad 181 has the same number of layers as the first pad 161, and the layers 81-85 of the second pad 181 are each of the first pad 161. Corresponding to the layers 61-65, respectively, detailed description thereof will be omitted.

FIG. 10 is a view illustrating a second insulating layer 191 of the light emitting device of FIG. 1.

Referring to FIG. 10, the second insulating layer 191 includes a stress relaxation layer 91, an antioxidant layer 92, a reflection layer 93, and a low refractive layer 94.

The stress relief layer 91 is disposed below the first electrode 151 and the second electrode 171, and may not be formed as a buffer layer for alleviating stress that may be generated in the antioxidant layer 92. have. The stress relaxation layer 91 may be formed of a material different from that of the antioxidant layer 92. The material of the stress mitigating layer 91 is a compound or mixture containing Si, Ti, Mg, Al, Zn, In, Sn, C components, or at least one of oxides, fluorides, sulfides, and nitrides containing the above metal components. One having a thickness of 100 kPa to 20,000 kPa, preferably 2,000 kPa to 10,000 kPa.

The anti-oxidation layer 92 is disposed between the reflective layer 93 and the stress relaxation layer 91 to prevent oxidation of the metal of the reflective layer 93 and to electrically insulate it. The material of the anti-oxidation layer 92 includes at least one of oxides, fluorides, sulfides, and nitrides containing at least one of Si, Ti, Mg, Al, Zn, In, Sn, and C, and has a thickness of 100 kV. It is in the range of -20,000 kPa, and the preferred thickness is in the range of 2,000 kPa-10,000 kPa.

The reflective layer 93 is disposed between the low refractive layer 94 and the anti-oxidation layer 92 and functions as a reflective layer, and the material has at least one of Ag, Al, Pt, Ru, Rh, and Pd. Metal or at least one of an oxide, a compound, a mixture, and an oxide having the metal component. For example, the reflective layer 93 is formed of a reflective metal layer. The thickness of the reflective layer 93 includes a range of 1,000 kPa to 10,000 kPa, and the thickness of the reflective layer 93 includes a range of 1,000 kPa to 5,000 kPa. Since the reflective layer 93 reflects the light incident through the low refractive layer 94, the reflective layer 93 may effectively reflect the light incident to the lower portion of the light emitting device.

The low refractive layer 94 includes a dielectric thin film disposed below the reflective layer 93 and having a low refractive index. The dielectric thin film includes an insulating material having a refractive index of 2 or less. The low refractive layer 94 is an insulating material, and the material includes at least one of oxides, fluorides, sulfides, and nitrides containing Si, Ti, Mg, Al, Zn, In, Sn, and C components. The low refractive layer 94 is in the range of 10 kV to 1,000 kV, and preferably includes 10 kV to 500 kV.

As another example, the second insulating layer 191 may be formed of a DBR structure as shown in FIG. 5 in which two layers having different refractive indices are alternately arranged, but is not limited thereto.

FIG. 11 is a side sectional view showing a light emitting device according to the second embodiment, and FIG. 12 is a sectional view along the A-A side of the light emitting device of FIG. In the description of the second embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

11 and 12, in the light emitting device 101, a plurality of first holes 127 are formed in the plurality of semiconductor layers 120, and a first insulating layer is formed in the plurality of first holes 127. An extension 143 of 141 is disposed. Different regions of the first semiconductor layer 121 are opened through the plurality of first holes 127. Accordingly, the connecting portion 153 of the first electrode 151 is filled in the extension portion 143 of the first insulating layer 141, so that the connecting portion 153 of the first electrode 151 is the first semiconductor. The layer 121 is electrically connected in different regions.

The first electrode 151 may include an expansion pattern 152 for connecting the plurality of connection portions 153, but is not limited thereto.

As shown in FIG. 12, the contact portions 155 of the first electrode 151 are arranged in a lattice structure in the first semiconductor layer 121, and the contact portions 155 of the first electrode 151 and the first semiconductor layer are arranged in a lattice structure. An extension part 143 of the first insulating layer 141 is disposed between the 121 parts. The contact portions 155 of the plurality of first electrodes 151 are in contact with the first semiconductor layer 121 in the first semiconductor layer 121, so that current can be efficiently diffused and supplied. As a result, a uniform current is supplied to the entire region of the active layer 123, whereby light extraction efficiency can be improved. The substrate 111 may be removed or another resin layer may be further disposed on the first semiconductor layer 121, but is not limited thereto.

13 is a side sectional view showing a light emitting device according to the third embodiment. In describing the third embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 13, the light emitting device includes a substrate 111, a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, a first electrode 151, a second electrode 171, The second insulating layer 191, the first pad 161, and the second pad 181 are included, and the resin layer 201 is included on the substrate 111.

The resin layer 201 may include a light transmissive material such as silicon or epoxy, and may be formed to have a refractive index lower or higher than that of the substrate 111. The refractive index of the substrate 111 may be 1.7 to 1.8, and the refractive index of the resin layer 201 may be in the range of 1.3 to 1.7.

The resin layer 201 may include at least one of a phosphor and a diffusion agent, and the phosphor may be selectively formed among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor, and excites a part of the light emitted from the active layer 123 to emit light at a different wavelength. The resin layer 201 may be formed to have a thickness of 1 to 100,000 μm, and as another example, may have a thickness of 10 to 100 μm. The diffusing agent may include at least one of a material higher than the refractive index of the resin layer, such as Al ₂ O ₃ , TiO ₂ , SiO ₂ , and Si ₃ N ₄ , but is not limited thereto.

The bottom width of the resin layer 201 may be formed to be the same width or wider than the top width of the substrate 111, but is not limited thereto.

As another example, the substrate 111 may be removed, and the removal method may use a physical method and / or a chemical method. The physical method may be laser lift off (LLO) using a laser, or may be removed using wet etching, but is not limited thereto. When the substrate 111 is removed, the resin layer may be formed on an upper surface of the first semiconductor layer 121. In addition, a light extraction structure may be formed on at least one of an upper surface of the first semiconductor layer 121 and an upper surface of the resin layer, but is not limited thereto.

14 is a side sectional view showing a light emitting device according to the fourth embodiment. In describing the fourth embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 14, a light emitting device includes a substrate 111 having a first light extracting structure 113, a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, and a first electrode ( 151, a second electrode 171, a first pad 161, a second pad 181, a second insulating layer 191, and a resin layer 201.

A first light extracting structure 113 is formed on the substrate 111, and the first light extracting structure 113 has a plurality of protrusions protruding upward and arranged in a matrix form. The first light extracting structure 113 is formed in a hemispherical or convex lens shape, thereby increasing the extraction efficiency of incident light. As another example, the first light extracting structure 113 may have a plurality of protrusions disposed in the direction of the plurality of semiconductor layers 120, and the structure may reflect incident light in a horizontal direction.

The resin layer 201 is formed on the substrate 111, and the resin layer 201 may include a translucent resin material, and may include at least one of a phosphor and a diffusion agent therein.

15 is a side sectional view showing a light emitting device according to the fifth embodiment. In describing the fifth embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 15, the light emitting device includes a substrate 111 having a first light extracting structure 113, a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, and a first electrode ( 151, a second electrode 171, a second insulating layer 191, a first pad 161, and a second pad 181.

The second insulating layer 191 includes the first electrode 151, the second electrode 171, the reflective electrode layer 131, and an extension 195 extending to side surfaces of the semiconductor layers 120. The extension 195 may cover side surfaces of the plurality of semiconductor layers 120 to suppress moisture penetration into the side surfaces of the plurality of semiconductor layers 120. In addition, the extension 195 of the second insulating layer 191 covers side surfaces of the first electrode 151 and the second electrode 171 to provide electrical protection, and the plurality of semiconductor layers 120 ) Can be blocked. The second insulating layer 191 may be formed of a light transmissive insulating material, thereby preventing the light extraction efficiency from being reduced.

A portion of the resin layer 203 may extend from an upper surface of the substrate 111 to a side surface thereof and may be in contact with the extension 195 of the second insulating layer 191. Accordingly, an insulating material covers the outer surface of the light emitting device.

The resin layer 203 may include at least one of a phosphor and a diffusion agent, and the phosphor may be selectively formed among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor, and excites a part of the light emitted from the active layer 123 to emit light at a different wavelength. The resin layer 201 may be formed to have a thickness of 1 to 100,000 μm, and as another example, may have a thickness of 10 to 100 μm. The diffusing agent is a material higher than the refractive index of the resin layer, such as Al ₂ O ₃ , TiO ₂ , SiO ₂ , Si ₃ N ₄ It may include at least one of, but is not limited thereto.

16 is a side sectional view showing a light emitting device according to the sixth embodiment. In describing the sixth embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 16, the light emitting device includes a substrate 111, a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, a first electrode 151, a second electrode 171, The second insulating layer 191, the first pad 161, and the second pad 181 are included.

The resin layer 201 may be disposed on the substrate 111, and the resin layer 201 may be a light exit surface. The resin layer 201 may include a phosphor, but is not limited thereto.

A plurality of semiconductor layers 120 and reflective electrode layers 131 are disposed below the substrate 111, and the reflective electrode layers 131 may be formed to have a width D2 wider than the width D1 of the substrate 111. Can be.

The outer portion of the reflective electrode layer 131 may protrude outwardly from the side surfaces of the plurality of semiconductor layers 120 to effectively reflect the light exposed to the side surfaces of the plurality of semiconductor layers 120.

In addition, the upper surface 133 of the outer portion of the reflective electrode layer 131 may be formed as a rough surface, that is, uneven surface or inclined surface, the uneven surface or inclined surface may improve the light extraction efficiency.

The first insulating layer 141 extends under the outer side of the reflective electrode layer 131, and the outer side of the first electrode 151 and the second electrode 171 below the first insulating layer 141. Is extended. The area of the first electrode 151 and the second electrode 171 may be increased by the outer side of the reflective electrode layer 131, so that the heat dissipation surface area may be increased.

A second insulating layer 191 may be formed below the first electrode 151 and the second electrode 171, and the second insulating layer 191 may be formed of the first electrode 151 and the second electrode. The electrode 171 is protected.

Here, a transmissive resin layer (not shown) may be formed on an outer portion of the reflective electrode layer 131, and the translucent resin layer may extend to the plurality of semiconductor layers 120 or to an upper surface of the substrate 111. But it is not limited thereto.

17 is a side sectional view showing a light emitting device according to a seventh embodiment. In describing the seventh embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 17, the light emitting device includes a substrate 111 having a first light extracting structure 115, a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, and a first electrode ( 151, a second electrode 171, a second insulating layer 191, a first pad 161, and a second pad 181.

The thickness T1 of the substrate 111 may be formed in a range of 30 μm to 70 μm by a polishing process such as polishing. As the thickness T1 of the substrate 111 becomes thinner, the thickness of the light emitting device may be reduced.

A light extraction structure 115 may be formed on an upper surface of the substrate 111. The first light extraction structure 115 may have an uneven pattern, a hemispherical shape, or a lens shape, but is not limited thereto.

18 is a side sectional view showing a light emitting device according to an eighth embodiment. In describing the eighth embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 18, the light emitting device may include a substrate 111, a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, a first electrode 151, a second electrode 171, The second insulating layer 191, the first pad 161, and the second pad 181 are included.

The width D1 of the substrate 111 may be smaller than the width D3 of the reflective electrode layer 131 or the bottom surface of the light emitting device.

Side surfaces 128 of the plurality of semiconductor layers 120 may be formed as inclined surfaces, and the inclined surfaces are less than 90 degrees, for example, 60 to 89 degrees with respect to the extension line of the bottom surface of the substrate 111. It can be formed at an angle θ1 of the range. An upper surface of the first semiconductor layer 121 may be formed to have a narrower width than a lower surface of the second semiconductor layer 125. That is, the plurality of semiconductor layers 120 may be gradually wider in the downward direction. Since the side surfaces 128 of the plurality of semiconductor layers 120 are formed as inclined surfaces, the critical angles of light incident on the inclined surfaces may be changed, so that light extraction efficiency may be improved.

As another example, the side surfaces 128 of the plurality of semiconductor layers 120 may be formed in a step shape, but embodiments are not limited thereto.

19 is a side sectional view showing a light emitting device according to the ninth embodiment. In the description of the ninth embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 19, the light emitting device includes a substrate 111, a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, a first electrode 151, a second electrode 171, The second insulating layer 191, the first pad 161, and the second pad 181 are included.

The width D4 of the substrate 111 may be formed to be wider than the width D5 of the bottom surface of the plurality of semiconductor layers 120, that is, the bottom surface of the second semiconductor layer 125. In addition, the width D4 of the substrate 111 may be wider than the width D5 of the reflective electrode layer 131. By increasing the width D4 of the substrate 111 relative to the width D5 of the lower surface of the plurality of semiconductor layers 120, the area of the light exit surface may be increased.

The plurality of semiconductor layers 120 may have the largest width D4 of the first semiconductor layer 121 and the narrowest width D5 of the second semiconductor layer 125. The side surfaces 129 of the plurality of semiconductor layers 120 are formed as inclined surfaces, and the inclined angle θ2 of the inclined surfaces is greater than 90 degrees with respect to an extension line horizontal to the bottom surface of the substrate 111. Angle, for example, may be formed in the range of 91 to 120 degrees.

As another example, the plurality of semiconductor layers 120 may further include a step structure on the inclined side surface 129, but is not limited thereto.

20 is a side cross-sectional view illustrating a light emitting device according to a tenth embodiment. In describing the tenth embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 20, the light emitting device includes a plurality of light emitting cells A1 and A2 and a protective layer 70 between the plurality of light emitting cells A1 and A2 under the substrate 111.

A plurality of light emitting cells A1 and A2 are arranged below the substrate 111, and the plurality of light emitting cells A1 and A2 may be spaced apart from each other, and may be two or more, for example, line or matrix. Can be.

The protective layer 70 is disposed between the plurality of light emitting cells A1 and A2, and spaces the plurality of light emitting cells A1 and A2 from each other and electrically protects the light emitting cells A1 and A2. The material of the protective layer 70 includes a heat cutting material, but is not limited thereto.

The protective layer 70 may be in contact with the substrate 111 and side surfaces of the light emitting cells A1 and A2, thereby preventing the flow of the light emitting cells A1 and A2.

Each of the light emitting cells A1 and A2 includes a plurality of semiconductor layers 120, a reflective electrode layer 131, a first insulating layer 141, a first electrode 151, a second electrode 171, and a second insulating layer. 191, a first pad 161, and a second pad 181. This configuration will be described with reference to the first embodiment.

First and second pads 161 and 181 are disposed in the light emitting cells, respectively, so that the light emitting cells may be mounted on the module substrate. Accordingly, each of the light emitting cells A1 and A2 may be implemented as a light emitting device driven by an AC power source according to a circuit pattern of a module substrate, but is not limited thereto.

21 is a side cross-sectional view of a light emitting module having a light emitting device according to the embodiment.

Referring to FIG. 21, a light emitting device 100 is mounted on a module substrate 211, and an optical lens 221 is coupled to the circumference of the light emitting device 100.

The module substrate 211 includes a circuit pattern having a first wiring layer 213 and a second wiring layer 215. The first wiring layer 213 is bonded to the first pad 161 of the light emitting device 100 by the conductive adhesive member 223, and the second wiring layer 215 is attached to the second pad of the light emitting device 100. 181 and the conductive adhesive member 225. The conductive adhesive members 223 and 225 may be formed of a material such as solder or a material such as bump balls.

The module substrate 211 may be a resin-based printed circuit board (PCB) including a circuit pattern. However, the module substrate 211 may include a metal core PCB (MCPCB, Metal Core PCB), flexible PCB (FPCB, Flexible PCB), or a ceramic substrate, but is not limited thereto.

An optical lens 221 may be disposed around the light emitting device 100, and the optical lens 221 may be disposed on an upper surface or an upper surface and a side surface of the light emitting device 100, thereby defining a distribution of the direction angle of incident light. I can regulate it.

In addition, when the second insulating layer 191 of the light emitting device is a reflective material, it is possible to reflect the light reflected from the upper surface of the module substrate 211, the light extraction efficiency can be improved.

The lower surface of the first pad 161 and the second pad 181 is disposed on the same plane, so that the light emitting device 100 can be easily mounted on the module substrate 211. In addition, since the areas of the first pad and the second pad 161 and 181 are formed in a range of 50% or more, for example, 70% to 90% of the entire lower surface area of the light emitting device 100, the heat dissipation generated in the light emitting device 100 is effectively performed. can do.

Since the light emitting device 100 is mounted on the module substrate 211, the light emitting device 100 may be provided as a module that may improve heat dissipation efficiency and may be coupled to a lighting system such as a lighting device, a display device, and an indicator device.

22 is a view illustrating a light emitting module illustrating an arrangement of a plurality of light emitting devices according to an embodiment.

Referring to FIG. 22, in the light emitting module, a plurality of light emitting devices 100 may be arranged at a predetermined interval on the module substrate 211. The light emitting device 100 includes a light emitting device according to an embodiment, and the module substrate 211 may include at least one of a resin-based substrate, a metal substrate having a metal layer, and a flexible substrate, but is not limited thereto. Do not. In addition, the plurality of light emitting devices 100 may emit the same peak wavelength or different peak wavelengths, but is not limited thereto.

23 is a side cross-sectional view of a light emitting module having a light emitting device according to the embodiment.

Referring to FIG. 23, the light emitting device package may include a light emitting device 100, a body 231, a first lead frame 241 and a second lead frame 243, and a molding member 251 disposed on the body 231. ).

The body 231 may include at least one of a highly reflective resin (eg, PPA), a polymer, a plastic, an epoxy, a silicon, or may include a ceramic material. The body 231 may include a concave portion 232, and may be formed to have a depth deeper than the thickness of the light emitting device 100 of the concave portion 232.

First and second lead frames 241 and 243 are disposed at the bottom of the concave portion 232, and the first and second lead frames 241 and 243 are made of metal, for example, titanium (Ti) and copper (Cu). ), At least one of nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), or an alloy of two materials It may include. The first and second lead frames 241 and 243 are copper (Cu) and at least one kind of metal alloy when either layer is an alloy, for example, copper-zinc alloy, copper-iron alloy, copper-chromium alloy, copper -Alloys such as silver-iron.

A gap portion 235 is disposed between the first and second lead frames 241 and 243, and the gap portion 235 may be formed of the same material as the body 231. The gap portion 235 may be formed of an insulating material, but is not limited thereto.

The light emitting device 100 corresponds to the first and second lead frames 241 and 243. The first pad 161 and the second pad of the light emitting device 100 are bonded to the first and second lead frames 241 and 243 and the conductive bonding members 245 and 247.

The light emitting device 100 is flip-bonded on the first lead frame 241 and the second lead frame 243, thereby effectively conducting heat generated from the light emitting device 100. In addition, when the second insulating layer 191 of the light emitting device 100 is a reflective material, the light reflected from the lead frames 241 and 243 may be reflected, so that light extraction efficiency may be improved. The light emitting device 100 may emit at least one of ultraviolet, red, green, blue, and white light, and may be implemented as a diode that emits a visible light band or an ultra violet band, for example. It is not limited.

A molding member 251 is formed in the recess 232, and the molding member 251 may be formed of a light transmissive resin material such as silicon or epoxy, and may include a phosphor. The fluorescent material may include, for example, a YAG-based, a silicate-based, or a TAG-based fluorescent material. When the resin layer to which the phosphor is added is disposed on the upper surface of the light emitting device 100, the molding member 251 may not be formed or the phosphor may not be added to the molding member 251.

The light emitting device package may be mounted as one or a plurality of light emitting devices of the above-described embodiments, but is not limited thereto. An optical lens (not shown) may be disposed on the body 231, and the optical lens adjusts a light distribution of light emitted from the recess 232.

24 is a graph comparing light output according to input currents of Comparative Examples and Experimental Examples.

Referring to FIG. 24, a comparative example is a structure without a reflective electrode layer in the structure of FIG. 1, and Experimental Example 1 is a structure with a reflective electrode layer having double-sided reflective characteristics in the structure of FIG. 1 and the first insulating layer has no reflective characteristics. . Experimental Example 2 is a case in which the structure of FIG. 1 has a simple reflective electrode layer rather than double-sided reflective characteristics and the first insulating layer has reflective characteristics. Experimental Example 3 is a case of having a reflective electrode layer having double-sided reflective characteristics and a first insulating layer having reflective characteristics, as in the light emitting device of FIG.

As shown in the graph of FIG. 24, when the output power according to the input current is viewed, the output power is output at the largest output value in Experimental Example 2, and when the reflective electrode layer having the double-sided reflection characteristic is applied as in Experimental Example 1, the maximum is 5 compared with the comparative example. It can be seen that the light extraction efficiency of about% is increased, and when the reflection characteristic is given to the first insulating layer as in Experiment 2, the light extraction efficiency is increased by up to 30% compared to the comparative example. In addition, as in Experiment 3, when the double-sided reflective electrode layer and the first insulating layer having reflective properties are applied, the light extraction efficiency is increased by up to 35% compared to the comparative example.

When the chip size applied to Comparative Examples, Experimental Examples 1, 2, and 3 is 1000 µm to 1000 µm or more, the peak wavelength is in the blue wavelength range, for example, 450 nm ± 2 nm, and the half width of the wavelength is 18 nm ± 1 nm. However, the present invention is not limited thereto.

FIG. 25 is a diagram comparing DST values according to whether a first pad and a second pad of a light emitting device according to an embodiment are applied.

Referring to FIG. 25, by arranging the first pad and the second pad under the light emitting device, the DST value is increased by 114% compared with the case where the first and second pads are not applied, and the variation in the DST value is also reduced. It can be seen that.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100,101 light emitting element 111 substrate
120: a plurality of semiconductor layers 121: first semiconductor layer
123: active layer 125: second semiconductor layer
131: reflective electrode layer 141: first insulating layer
151: first electrode 153: connecting portion
161: first pad 171: second electrode
181: second pad 191: second insulating layer

Claims (12)

A translucent substrate;
A first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type under the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer A plurality of semiconductor layers comprising;
A reflective electrode layer disposed under the second semiconductor layer;
At least one first hole formed from the reflective electrode layer to a part of the first semiconductor layer;
A first insulating layer disposed below the reflective electrode layer and having an extension part extending in the at least one first hole;
A first electrode disposed under the first insulating layer and having a connection portion connected to the first semiconductor layer in an extension of the first insulating layer;
A second electrode disposed under the first insulating layer and connected to the reflective electrode layer; And
A second insulating layer disposed between the first and second electrodes,
And the first insulating layer and the extension part of the first insulating layer include a layer reflecting light emitted from the active layer. The light emitting device of claim 1, wherein the first hole is arranged in plural, and the circumference of the first hole includes an inclined surface. The method of claim 2, further comprising a first pad disposed under the first electrode and a second pad disposed under the second electrode.
The sum of the lower surface areas of the first pad and the second pad is a light emitting device disposed in the range of 70% to 95% of the upper surface area of the substrate. The reflective electrode layer according to any one of claims 1 to 3, wherein
A first reflection layer disposed below the second semiconductor layer;
A barrier layer disposed under the first reflection layer; And
A light emitting device comprising a second reflection layer disposed below the barrier layer. The barrier material of claim 4, wherein the barrier layer comprises a first barrier layer disposed below the first reflection layer and a second barrier layer disposed on the second reflection layer.
The reflective electrode layer,
An ohmic contact layer disposed between the first reflection layer and the second semiconductor layer;
A first protective layer disposed between the first barrier layer and the second barrier layer;
A first adhesive layer disposed between the first protective layer and the second barrier layer; And
The light emitting device further comprises a second protective layer disposed under the second reflection layer. The method of claim 4, wherein the first insulating layer has a low refractive index layer having a first refractive index and a high refractive index layer having a second refractive index higher than the first refractive index under the low refractive index, and is disposed at 2 to 8 cycles. Light emitting device. The method of claim 4, wherein the first insulating layer,
An insulating low refractive layer disposed under the second semiconductor layer;
A reflective layer having a metal component under the low refractive layer; And
A light emitting device comprising at least one of an anti-oxidation layer and a stress relaxation layer disposed below the reflective layer. The method of claim 7, wherein the second insulating layer,
A strain mitigating layer under the first and second electrodes;
An anti-oxidation layer under the strain mitigating layer;
A reflective layer under the antioxidant layer; And
A light emitting device comprising a low refractive layer under the reflective layer. The light emitting device of claim 4, wherein the reflective electrode layer, the first insulating layer, and the first and second electrodes include an outer portion extending outwardly from side surfaces of the plurality of semiconductor layers. The light emitting device of claim 4, wherein a width of the substrate is wider than a width of the reflective electrode layer. The light emitting device of claim 4, wherein side surfaces of the plurality of semiconductor layers include sloped surfaces. The light emitting device of claim 4, further comprising a translucent resin layer on the substrate.

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