KR102463311B1 - Light emitting device and light emitting device package including the same - Google Patents

Abstract

The light emitting device disclosed in the embodiment includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a reflective layer made of an insulating material on the light emitting structure; a first bonding pad and a second bonding pad spaced apart from each other on the reflective layer; a first electrode extending from a first bonding region between the reflective layer and the first bonding pad to a second bonding region between the reflective layer and the second bonding pad; a second electrode extending from a second bonding region between the reflective layer and the second bonding pad to a first bonding region between the reflective layer and the first bonding pad; and a protective layer on the first and second electrodes, wherein the first electrode includes a plurality of first contact portions connected to the first conductivity type semiconductor layer, and the second electrode includes the second conductivity type semiconductor layer. a plurality of second contact portions connected to the layer, wherein the second electrode has a plurality of first through holes disposed in a center region between the first and second bonding pads, and the protective layer includes each of the first through holes and a third contact part disposed on the reflective layer and in contact with the upper surface of the reflective layer.

Description

A light emitting device and a light emitting device package including the same

An embodiment of the invention relates to a semiconductor device.

An embodiment of the invention relates to a light emitting device.

An embodiment of the present invention relates to a package including a light emitting device or a semiconductor device and a lighting device including the same.

A semiconductor device containing a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials have developed red, green, and It has the advantage of being able to implement light of various wavelength bands, such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a Group III-5 or Group II-6 compound semiconductor material may be implemented as a white light source with good efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a group 3-5 or group 2-6 compound semiconductor material, a photocurrent is generated by absorbing light in various wavelength ranges through the development of the device material. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light receiving element has advantages of fast response speed, safety, environmental friendliness, and easy adjustment of element materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means and a backlight of a liquid crystal display (LCD) display device. The application is expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device may be extended to high-frequency application circuits, other power control devices, and communication modules.

A light emitting device (Light Emitting Device) may be provided as a p-n junction diode having a property of converting electrical energy into light energy by using, for example, a group 3-5 element or a group 2-6 element on the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm. can be used

Ultraviolet rays can be divided into three types in the order of the longest wavelength: UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm). The UV-A (315nm~400nm) area is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm~315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

The light emitting device improves light reflection efficiency by disposing a reflective layer including a DBR (Distributed Bragg Reflector) structure on the light emitting structure. When applying such a DBR structure, research is being conducted to improve interlayer bonding strength and prevent a decrease in reflectance.

An embodiment of the present invention provides a semiconductor device or a light emitting device having improved bonding strength between a reflective layer, an electrode, and a protective layer on a light emitting structure.

An embodiment of the present invention provides a semiconductor device or a light emitting device for reducing light loss by reducing a contact area between a reflective layer and an electrode on a light emitting structure.

An embodiment of the present invention provides a semiconductor device or a light emitting device having improved light efficiency by reducing a contact area between a reflective layer and an electrode on a light emitting structure.

An embodiment of the present invention provides a semiconductor device or a light emitting device in which a protective layer and a reflective layer are brought into contact with each other through an opening of an electrode extending between first and second bonding pads on a light emitting structure.

An embodiment of the present invention provides a semiconductor device or a light emitting device having improved internal reflectance on a reflective layer provided in one direction of a light emitting structure.

A package or a light source device having a semiconductor device or a light emitting device according to an embodiment of the present invention is provided.

A light emitting device according to an embodiment of the present invention includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a reflective layer made of an insulating material on the light emitting structure; a first bonding pad and a second bonding pad spaced apart from each other on the reflective layer; a first electrode extending from a first bonding region between the reflective layer and the first bonding pad to a second bonding region between the reflective layer and the second bonding pad; a second electrode extending from a second bonding region between the reflective layer and the second bonding pad to a first bonding region between the reflective layer and the first bonding pad; and a protective layer on the first and second electrodes, wherein the first electrode includes a plurality of first contact portions connected to the first conductivity type semiconductor layer, and the second electrode includes the second conductivity type semiconductor layer. a plurality of second contact portions connected to the layer, wherein the second electrode has a plurality of first through holes disposed in a center region between the first and second bonding pads, and the protective layer includes each of the first through holes and a third contact part disposed on the reflective layer and in contact with the upper surface of the reflective layer.

According to an embodiment of the present invention, an area of a top surface of the reflective layer in the center region may be greater than an area of a bottom surface of the first bonding pad, and the first electrode and the first contact portion may be disposed in the center region.

According to an embodiment of the present invention, an area of an upper surface of the reflective layer in the center region may be greater than an area of a lower surface of the second bonding pad, and the second contact portion may be disposed in the center region.

According to an embodiment of the present invention, the number of the third contact parts in the center area may be greater than the number of the first contact parts or the second contact parts.

According to an embodiment of the present invention, the contact area of the third contact portion and the reflective layer in the center region may have a ratio of 65% to 85% of the lower surface area of the second electrode.

According to an embodiment of the present invention, the reflective layer may include a DBR structure, and a transparent conductive layer may be included between the reflective layer and the light emitting structure.

According to an embodiment of the present invention, the first bonding pad and the second bonding pad are spaced apart from each other in the first direction, and the length in the second direction is longer than the length in the first direction, and the first electrode is long in the first direction. It has a length and is arranged in plurality in the second direction, and the third contact portion may be spaced apart from the first and second contact portions.

The light emitting device package according to an embodiment of the present invention may include the light emitting device disclosed above.

According to an embodiment of the present invention, it is possible to reduce the problem of peeling between the reflective layer, the electrode, and the protective layer disposed between the light emitting structure and the bonding pad.

According to an embodiment of the present invention, it is possible to improve the reflective efficiency between the reflective layer disposed between the light emitting structure and the bonding pad, the electrode, and the protective layer.

According to an embodiment of the invention, by reducing the contact area between the reflective layer and the electrode in the stacked structure of the reflective layer, the electrode, and the protective layer on the light emitting structure and increasing the contact area between the reflective layer and the protective layer, reflection in the contact region between the protective layer and the reflective layer rate can be improved.

According to an embodiment of the present invention, it is possible to improve the internal reflectivity of the light emitting device.

According to an embodiment of the invention, it is possible to improve the light output of the light emitting device.

According to an embodiment of the invention, it is possible to improve the forward voltage of the light emitting device.

According to an embodiment of the invention, it is possible to improve the reliability of the light emitting device.

According to an embodiment of the present invention, a light emitting device package having a light emitting device, a method for manufacturing the same, and a light source device including the same can be provided.

1 is a plan view of a light emitting device according to an embodiment.
FIG. 2 is a cross-sectional view F1-F1 side of the light emitting device of FIG. 1 .
FIG. 3 is a cross-sectional view F2-F2 showing the contact between the reflective layer, the second electrode, and the protective layer on the light emitting structure of FIG. 2 .
FIG. 4 is a view showing a top surface of a light emitting structure in the light emitting device of FIGS. 1 and 2 .
FIG. 5 is a view viewed from the top of the conductive layer in the light emitting device of FIGS. 1 and 2 .
6 is a view viewed from the top of the reflective layer in the light emitting device of FIGS. 1 and 2 .
7 is a view viewed from the top of the first and second electrodes in the light emitting device of FIGS. 1 and 2 .
8 is a view seen from the top of the protective layer in the light emitting device of FIGS. 1 and 2 .
9 is a plan view in which the layers of FIGS. 4 to 10 are stacked.
11 is another example of the light emitting device of FIG.
12 is a perspective view illustrating an example of a light emitting device package including the light emitting device of FIG. 2 .
13 is a cross-sectional view on the AA side of the light emitting device package of FIG. 12 .
14 is another example of a light emitting device package including the light emitting device of FIG. 1 .
15 is a graph showing reflectance in a light emitting device according to a comparative example.
16 is a graph showing reflectivity in a light emitting device according to an embodiment.

An embodiment of the invention will be described with reference to the accompanying drawings. In the description of an embodiment of the invention, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. )", "on/over" and "under" refer to being formed "directly" or "indirectly through another layer" include all In addition, the reference for the upper / upper or lower of each layer will be described with reference to the drawings, but the embodiment is not limited thereto.

The device disclosed in the present invention may include a semiconductor device or a light emitting device emitting light of ultraviolet, infrared or visible light. Hereinafter, as an example of a semiconductor device, a light emitting device is applied as an example, and a non-light emitting device, for example, a Zener diode, or a sensing device for monitoring wavelength or heat is included in a package or light source device to which the light emitting device is applied. can Hereinafter, a description will be made based on a case in which a light emitting device is applied as an example of a semiconductor device.

<Light emitting element>

1 is a plan view of a light emitting device according to an embodiment, FIG. 2 is a cross-sectional view F1-F1 of the light emitting device of FIG. 1 , and FIG. 3 is a reflective layer on the light emitting structure of FIG. 2 showing the contact between the second electrode and the protective layer It is a drawing.

1 to 3 , a light emitting device 500 according to an embodiment of the present invention includes a light emitting structure 510 , a conductive layer 530 , a reflective layer 560 , a first electrode 541 , and a second electrode 542 . ), a first bonding pad 571 , a second bonding pad 572 , and a protective layer 550 .

In the light emitting device 500 , first and second bonding pads 571 and 572 may be disposed on the light emitting structure 510 . Since the first and second bonding pads 571 and 572 are disposed on one surface of the light emitting device 500 , the light emitting device 500 may be disposed inside a package in a flip-chip manner or disposed on a circuit board.

<substrate>

The light emitting device 500 may include a substrate 505 . The substrate 505 may be disposed under the light emitting structure 510 . The substrate 505 may be made of a light-transmitting material or an insulating material. The substrate 505 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, a concave-convex pattern 502 may be disposed on an upper surface of the substrate 505 . A plurality of convex portions may be arranged in the concave-convex pattern 502 , and a critical angle of incident light may be changed. A convex portion or a concave portion may be disposed on at least one of an upper surface and a lower surface of the substrate 505 . The substrate 505 may provide a surface for emitting light emitted from the inside of the light emitting device 500 . The substrate 505 may be removed, but is not limited thereto.

<Light emitting structure>

The light emitting structure 510 may be provided as a compound semiconductor. The light emitting structure 510 may be formed of, for example, a group 2-6 or group 3-5 compound semiconductor. For example, the light emitting structure 510 includes at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). can be

The light emitting structure 510 may include a plurality of compound semiconductor layers. The light emitting structure 510 includes, for example, a first conductivity type semiconductor layer 511 , a second conductivity type semiconductor layer 513 , the first conductivity type semiconductor layer 511 , and the second conductivity type semiconductor layer 513 . It may include an active layer 512 disposed therebetween. The first conductivity type semiconductor layer 511 may be disposed on the substrate 505 . A single-layer or multi-layered compound semiconductor layer may be disposed between the first conductivity-type semiconductor layer 511 and the substrate 505 . The light emitting structure 510 may emit blue, green, red, ultraviolet or infrared light.

The first conductive semiconductor layer 511 may be disposed under the active layer 512 . The first conductive semiconductor layer 511 may be disposed between the active layer 512 and the substrate 505 . The first conductivity type semiconductor layer 511 may be provided as, for example, a group 2-6 compound semiconductor or a group 3-5 compound semiconductor. For example, the first conductivity-type semiconductor layer 511 may have the composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). It may be provided as a semiconductor material having a composition formula of (Al _x Ga _{1 -x} ) _y In _{1 -y} P ( _0≤x≤1 , 0≤y≤1). For example, the first conductivity type semiconductor layer 511 may be selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like. and an n-type dopant selected from the group including Si, Ge, Sn, Se, Te, and the like may be doped. The first conductive semiconductor layer 511 may have a single-layer or multi-layer structure, or may include a superlattice structure.

The active layer 512 may be disposed on the first conductivity-type semiconductor layer 511 . The active layer 512 may contact the first conductivity-type semiconductor layer 511 and the second conductivity-type semiconductor layer 513 . The active layer 512 may be formed of, for example, a group 2-6 compound semiconductor or a group 3-5 compound semiconductor. For example, the active layer 512 is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) or (Al _x Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1) may be provided as a semiconductor material having a composition formula. For example, the active layer 512 may be selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like. For example, the active layer 512 may have a multi-well structure and may include a plurality of barrier layers and a plurality of well layers. The active layer 512 may emit at least one of blue, green, red, ultraviolet, and infrared light.

The second conductive semiconductor layer 513 may be disposed on the active layer 512 . The second conductive semiconductor layer 513 may be disposed between the active layer 512 and the conductive layer 530 . The second conductivity type semiconductor layer 513 may be, for example, a group 2-6 compound semiconductor or a group 3-5 compound semiconductor. For example, the second conductivity type semiconductor layer 513 is a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). It may be provided as a material or a semiconductor material having a compositional formula of (Al _x Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1). For example, the second conductivity type semiconductor layer 513 may be selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like. and may be doped with a p-type dopant selected from the group including Mg, Zn, Ca, Sr, Ba, and the like. The second conductivity type semiconductor layer 513 may be disposed as a single layer or a multilayer, or may have a superlattice structure.

In the light emitting structure 510 according to the embodiment of the present invention, the first conductivity-type semiconductor layer 511 may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 513 may be provided as a p-type semiconductor layer. have. As another example, the first conductivity-type semiconductor layer 511 may be provided as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 513 may be provided as an n-type semiconductor layer. Hereinafter, for convenience of explanation, the case in which the first conductivity-type semiconductor layer 511 is provided as an n-type semiconductor layer and the second conductivity-type semiconductor layer 513 is provided as a p-type semiconductor layer will be described. .

The first conductive semiconductor layer 511 may be connected to the first electrode 541 . The second conductive semiconductor layer 513 may be connected to at least one or both of the conductive layer 530 and the second electrode 542 .

The light emitting structure 510 may include a plurality of first recesses h1 as shown in FIG. 2 . The plurality of recesses h1 may be stepped regions in which the upper portion 511a of the first conductive semiconductor layer 511 is exposed on the upper surface of the light emitting structure 510 . The recess h1 may be respectively disposed in a region corresponding to the opening h2 shown in FIG. 1 . The recess h1 may be disposed on a region where the light emitting structure 510 and the first electrode 541 overlap. The plurality of recesses h1 may be disposed through the conductive layer 530 , the second conductive semiconductor layer 513 , and the active layer 512 . 4 , the plurality of recesses h1 on the light emitting structure 510 may be spaced apart from each other. The plurality of recesses h1 may be arranged in first and second directions (X, Y). The plurality of recesses h1 may be disposed at the same interval in the first direction and may be disposed at the same interval in the second direction. The plurality of recesses h1 may be arranged in at least two rows in the second direction, and a plurality of recesses h1 may be arranged in the first direction. When the through-holes h1 are arranged at uniform intervals in each direction, current may be supplied in a uniform distribution through the first contact portion k1.

The recess h1 may have an upper width or an upper area greater than a lower width or lower area. The upper shape of the recess h1 may be a polygonal shape or a circular shape.

The light emitting structure 510 may include a low-stepped outer portion 511b around the outer periphery. The outer portion 511b may be disposed on the inner side of the side surface of the substrate 505 and may be disposed lower than the upper surface of the light emitting structure 510 .

<Electrode and reflective structure>

An electrode and a reflective structure may be included on the light emitting structure 510 . The electrode structure may include a conductive layer 530 , a first electrode 541 , and a second electrode 542 . The reflective structure is disposed on the light emitting structure 510 and reflects incident light. The reflective structure may include, for example, a reflective layer 560 . The reflective layer 560 may include at least one of an insulating material, a metallic material, and a non-metallic material. The reflective layer 560 may include a structure in which first and second layers having different refractive indices are alternately disposed. The reflective layer 560 may include, for example, a DBR structure.

The reflective layer 560 may be disposed on the outer portion 511b of the light emitting structure 510 . A bottom of the outer portion 511b may be disposed lower than a top surface of the active layer 512 . The upper portion of the outer side of the light emitting structure 510 may be provided as a sloped surface on the outer portion 511b.

Since the reflective layer 560 covers the outer portion 511b of the light emitting structure 510 , it is possible to prevent the active layer 512 of the light emitting structure 510 from being exposed. Since the reflective layer 560 extends to the side surface of the active layer 512 of the light emitting structure 510 , light reflection efficiency may be improved.

A portion of the reflective layer 560 is disposed on each of the recesses h1, an opening ( h2) may be included. The opening h2 may have a wide upper portion and a narrow lower portion. A first contact portion k1 of the first electrode 541 may be disposed in the opening h2, respectively. The second contact portion k1 may be in contact with the upper portion 511a of the first conductivity type semiconductor layer 511 . Accordingly, the first conductive semiconductor layer 511 may be electrically connected to the first electrode 541 .

A plurality of through holes h3 may be disposed in the reflective layer 560 , and a second contact portion k2 of the second electrode 542 may be disposed in the plurality of through holes h3 . The plurality of through-holes h3 may be disposed in a region overlapping the second electrode 542 in a vertical direction. As shown in FIG. 1 , a plurality of the through holes h3 may be arranged in the first direction X and a plurality of the through holes h3 may be arranged in the second direction. The number of the through holes h3 arranged in the first direction (or the number of rows) may be greater than the number (or the number of columns) arranged in the second direction Y. The through-holes h3 may be disposed at the same distance from each other in the first direction and may be disposed at the same distance from each other in the second direction. When the through-holes h3 are arranged at uniform intervals in each direction, current may be supplied in a uniform distribution through the second contact part k2 .

The conductive layer 530 may be disposed on the light emitting structure 530 . The conductive layer 530 may be disposed on the second conductive semiconductor layer 513 . The conductive layer 530 may be connected to the second electrode 542 and spread a current. For example, the conductive layer 530 may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride. The conductive layer 530 may include a light-transmitting material. The conductive layer 530 is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), or indium (IGZO). gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/ It may include at least one selected from the group including IrOx/Au/ITO, Pt, Ni, Au, Rh, and Pd.

A top surface area of the conductive layer 530 may be smaller than a top surface area of the second conductivity-type semiconductor layer 513 . The conductive layer 530 is a transparent layer and may be provided as a single layer or multiple layers. The conductive layer 530 may be disposed in an area of 80% or more of the top surface area of the light emitting structure 510 to improve electrical characteristics of the light emitting device.

Here, the current diffusion layer 520 may be disposed on the light emitting structure 510 . The current diffusion layer 520 may be disposed on the second conductivity type semiconductor layer 513 . The current diffusion layer 520 may be in contact with an upper surface of the second conductive semiconductor layer 513 . The current diffusion layer 520 may be disposed between the second conductive semiconductor layer 513 and the conductive layer 530 . The current diffusion layer 520 may be disposed in a region corresponding to the second contact portion k2 of the second electrode 542 among regions between the conductive layer 530 and the light emitting structure 510 . The current spreading layer 520 may block or block the input current and spread it horizontally through the conductive layer 530 . For example, the current diffusion layer 520 may be formed of an oxide or nitride, or an insulating material or a metal material. The current diffusion layer 520 may overlap the second contact portion k2 in a vertical direction. The current spreading layer 520 may be distributed over a plurality of regions. The current diffusion layer 520 may prevent current from being concentrated under the second electrode 542 .

The through hole h3 of the reflective layer 560 may be vertically overlapped with the current diffusion layer 520 . Accordingly, the current injected through the second contact portion k2 may be diffused through the current diffusion layer 520 . The current diffusion layer 520 may be disposed in a dot shape, may be disposed in a region overlapping with the first and second bonding pads 571 and 572, or may be disposed under each through hole h3 as shown in FIGS. 4 and 6 , respectively. can

As shown in FIG. 4 , a portion of the dot shape of the current diffusion layer 520 , for example, a shape of a portion overlapped with the first bonding pad 571 may include a different shape or a different size. For example, the shape of the current diffusion layer 520 overlapping the first bonding pad 571 or the shape of the through hole h3 may be an oval shape or a larger size to provide a polarity identification mark.

As shown in FIG. 4 , the positions of the first recesses h1 may be respectively disposed in the center region between at least two or three or more through-holes h3 to make the current flow uniform. The conductive layer 530 may cover the current diffusion layer 520 as shown in FIGS. 2, 4 and 5 , and an opening h2 may be disposed in a region corresponding to the recess h1 .

The reflective layer 560 may be disposed on the conductive layer 530 . The reflective layer 560 may be disposed on the light emitting structure 510 . The reflective layer 560 is provided as an area covering the upper region of the light emitting structure 510 , thereby reducing light loss and increasing light reflectance. The reflective layer 560 may be provided to cover the entire upper surface of the conductive layer 530 , thereby reducing the problem of peeling of the conductive layer 530 .

The reflective layer 560 may be formed of an insulating material and/or a metallic material. For example, the reflective layer 560 may include a Distributed Bragg Reflector (DBR) or an Omni Directional Reflector (ODR). For example, the reflective layer 560 may include a DBR structure in which first and second layers having different refractive indices are alternately stacked. The reflective layer 560 may alternately stack at least two layers having different refractive indices, the first layer being any one of Al ₂ O ₃ , TiO ₂ and SiO ₂ , and the second layer being Al ₂ O ₃ , Ta ₂ It may be the other one of O ₅ and SiO ₂ .

As another example, the reflective layer 560 may include an Omni Directional Reflector (ODR) layer. The ODR layer of the reflective layer 560 may have, for example, a refractive index lower than that of the light emitting structure 510 . The reflectivity of the reflective layer 560 may be improved. The ODR layer of the reflective layer 560 may include oxide or nitride. For example, the ODR layer of the reflective layer 560 may include, for example, at least one selected from materials such as SiO ₂ and SiNx.

In addition, in the reflective layer 560 , a first layer may be an insulating layer, and a second layer may be a metal layer or a conductive layer. For example, the reflective layer 560 may be formed of a plurality of layers including an insulating layer and a conductive layer. For example, the reflective layer 560 may include a dielectric layer, a polymer layer, a metal layer, or a semiconductor layer such as AlGaInP. The reflective layer 560 is TiO ₂ , SiO ₂ , SiNx, MgO, ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide) ), IZTO (Indium-Zinc-Tin-Oxide), IAZO (Indium-Aluminum-Zinc-Oxide), GZO (Gallium-Zinc-Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium- Tin-Oxide), AZO (Aluminum-Zinc-Oxide), Ag, Ag ₂ O, Al, Ni, Ti, Zn, Rh, Mg, Pd, Ru, Pt, Ir, or at least one selected from alloys thereof can do. The reflective layer 560 may have a thickness of 5 micrometers or less, for example, in a range of 3 to 5 micrometers. When the thickness of the reflective layer 560 is out of the above range, transmittance may increase or reflection efficiency may decrease.

The reflective layer 560 reflects the light emitted from the active layer 512 , thereby minimizing light absorption and improving the luminous intensity Po. When the reflective layer 560 has a flip-chip structure, light absorption on the light emitting structure 510 may be minimized. The light emitting device may emit light through multi-sided light emission, for example, five surfaces.

Since the reflective layer 560 is disposed on the conductive layer 530 , a peeling problem between the reflective layer 560 and the conductive layer 530 is reduced, thereby preventing deterioration of optical or electrical properties.

The opening h2 of the reflective layer 560 is disposed at the same position as the opening h2 on the conductive layer 530 as shown in FIGS. 2, 5, and 6 and may have a different size. The number of columns Af (refer to FIG. 6 ) of the opening h2 of the reflective layer 560 may be one or two or more, and may be disposed to overlap the line shape of the first electrode 541 . The opening h2 of the reflective layer 560 may be disposed in a region overlapping the first and second bonding pads 571 and 573 in a vertical direction, respectively. The through hole h3 of the reflective layer 560 may be disposed in a region corresponding to the current diffusion layer 520 of FIGS. 2 and 4 , respectively. The number of the openings h2 may be smaller than the number of the through holes h3, which is because the area of the active layer decreases as the number of openings h2 increases. can be placed inside the

In the electrode structure, the first electrode 541 and the second electrode 542 may be disposed on the reflective layer 560 . The first electrode 541 may be disposed on the reflective layer 560 . The first electrode 541 may be in contact with the surface of the reflective layer 560 . The second electrode 542 may contact the surface of the reflective layer 560 . The first electrode 541 may include a first contact portion k1. The first contact portions k1 may respectively protrude through the opening h2 and may be disposed to be spaced apart from each other. The first contact portion k1 may be connected to and in contact with the first conductive semiconductor layer 511 through the opening h2 of the reflective layer 560 .

The first electrode 541 may be disposed in a first bonding region between the light emitting structure 510 and the first bonding pad 571 . The first electrode 541 may extend from the first bonding area to a second bonding area between the light emitting structure 510 and the second bonding pad 572 . One or a plurality of the first electrodes 541 may be disposed. The first electrode 541 may include one or a plurality of branch patterns or female patterns. 1 and 7 , the first electrode 541 includes a first extension 541a extending to the second bonding region, and between the first electrode 541 and the first extension 541a. It may include a connected second extension 541b. The first extension 541a and the second extension 541b may be connected to the first electrode 541 . The first and second extensions 541a and 541b may extend from the first electrode 541 in the first direction with a long length. When there are a plurality of first electrodes 541 , the plurality of first electrodes 541 may be disposed in parallel.

The first electrode 541 may be disposed in the open region h10 of the second electrode 542 as shown in FIGS. 1 and 7 . The first electrode 541 and the second electrode 542 may be spaced apart from each other. The first electrode 541 and the second electrode 542 may be separated or insulated from each other by the protective layer 550 . The first electrode 541 may be provided in a line shape having a long length in the first direction. When there are a plurality of first electrodes 541 , the plurality of first electrodes 541 may be spaced apart from each other in the second direction.

The second electrode 542 may extend from a second bonding area under the second bonding pad 572 toward the first bonding area or the first bonding pad 571 . The second electrode 542 includes a third extension 542a extending below the first bonding pad 571 and a fourth extension 542a extending from the second electrode 542 in a third extension direction. 542b). The third extension 542a and the fourth extension 542b may be connected to the second electrode 542 . The third and fourth extensions 542a and 542b may be disposed over the entire area of the reflective layer 560 from the second electrode 542 . The first and second electrodes 541 and 542 may be disposed not to overlap each other.

A top area of the second electrode 542 may be larger than a top area of the first electrode 541 . The second electrode 542 may be in contact with the reflective layer 560 . A contact area between the second electrode 542 and the top surface of the reflective layer 560 may be greater than a contact area between the first electrode 541 and the top surface of the reflective layer 560 . For example, the contact area between the second electrode 542 and the top surface of the reflective layer 560 is 2 or more times or 3 times or more larger than the contact area between the first electrode 541 and the top surface of the reflective layer 560 . can Accordingly, the second electrode 542 reflects the light incident from the outer periphery of the first contact portion k1 of the first electrode 541 , thereby minimizing light loss.

The second electrode 542 may be electrically connected to the second conductivity type semiconductor layer 513 . The second electrode 542 may be disposed on the second conductivity type semiconductor layer 513 . In an embodiment, the conductive layer 530 may be disposed between the second electrode 542 and the second conductivity-type semiconductor layer 513 . It may be electrically connected to the second conductivity-type semiconductor layer 513 through the through hole h3 provided in the second reflective layer 562 . For example, the second electrode 542 may be electrically connected to the second conductivity-type semiconductor layer 513 through the conductive layer 530 . The second electrode 542 may contact at least one or both of the conductive layer 530 and the second conductive semiconductor layer 513 .

The first electrode 541 and the second electrode 542 may be formed in a single-layer or multi-layer structure. For example, the first electrode 541 and the second electrode 542 may include a metallic material. For example, the first electrode 541 and the second electrode 542 are ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Cu, Ru, Mg, Zn, Pt, Au, Hf may be at least one or an alloy of two or more of these materials. The first electrode 541 and the second electrode 542 may include the same stacked structure or the same metal. When the first and second electrodes 541 and 542 have a multilayer structure, for example, a first layer for bonding to the reflective layer 560 , a second layer for reflection on the first layer, and a metal on the second layer A third layer for adhesion, a fourth layer for bonding on the third layer, and a fourth layer for adhesion with another material may be formed on the fourth layer. The first layer may serve as a layer for bonding between the non-metal and the second metallic layer, and may include, for example, at least one of Cr, Cu, Ti, Rh, Pd, and Ni. The first layer has a low reflectance, so that incident light may be lost. The second layer may include Al or Ag, the third layer may include at least one of Ti, Ni, and Rh, the fourth layer may include Au, and the fifth layer Silver may include at least one of Ti, Ni, and Rh. The thickness of the first layer may be 5 nm or less, for example, in the range of 1 to 5 nm.

The first electrode 541 and the second electrode 542 may include a first layer or a lowermost layer in contact with the reflective layer 560, and the first layer may be a material having a lower reflectance than aluminum or silver. can The first layer may have a problem in that some light transmitted through the reflective layer 560 is absorbed. Accordingly, since the second electrode 542 has a relatively large area on the light emitting structure 510 , light absorption loss by the first layer in contact with the reflective layer 560 may occur. In the embodiment of the present invention, the contact area of the second electrode 542 may be reduced, thereby reducing light loss and increasing reflection efficiency.

2, 7, and 8 , the second electrode 542 includes a plurality of first electrodes 542 disposed in a center region Ac between the first bonding pad 571 and the second bonding pad 572 . It may include a through hole (h4). The first through hole h4 may be a region between the first and second bonding regions overlapping the first and second bonding pads 571 and 572 in the second electrode 542 . The second through hole h4 is disposed in the center region Ac or a region between the first and second bonding regions, and may penetrate from an upper surface to a lower surface of the second electrode 542 . The first through hole h4 may expose the upper surface of the reflective layer 560, respectively.

In the embodiment of the present invention, the area of the center region Ac between the first and second bonding pads 571 and 572 in the second electrode 542 may be reduced, thereby reducing light loss. Since the first and second bonding pads 571 and 572 overlap the second electrode 542 in a vertical direction, when a first through hole is formed in the second electrode 542 , the first and second bonding pads The upper surface of (571,572) may have a lower flatness and may be tilted during bonding. Accordingly, the third and third extension portions 542a and 542b of the second electrode 542 that are vertically overlapped with the first and second bonding pads 571 and 572 may be provided without a first through hole.

1 and 10 , the first through hole h4 is formed in a region between both sides of the light emitting structure 510 and the first electrode 541 and in the region between the first electrodes 541 . Each can be arranged. The first through-holes h4 may be respectively disposed around the through-holes h3 of the reflective layer 560 in the center region Ac. The number of the first through-holes h4 may be greater than the number of the through-holes h3 of the reflective layer 560 in the center region Ac. A lower surface area of the first through hole h4 may be larger than a lower surface area of the through hole h3 of the reflective layer 560 in the center region Ac. In the center region Ac, the area of the lower surface of the first through hole h4 may be two or more times or three times greater than the area of the lower surface of the through hole h3 of the reflective layer 560 . The first through-holes h4 may be arranged at regular intervals or at random intervals or at random distributions in the first and second directions.

The upper surface area of the first through hole h4 may be equal to or greater than the lower surface area. The first through hole h4 may include at least one of a top view shape of a circle shape, an oval shape, or a polygonal shape. A lower width or diameter of the first through hole h4 may be 50 micrometers or less, for example, in the range of 5 to 50 micrometers. When the range of the first through hole h4 is larger than the range, electrical characteristics may be affected, and if smaller than the range, improvement in optical efficiency may be insignificant.

<Protective layer>

A protective layer 550 may be disposed on the first and second electrodes 541 and 542 . The protective layer 550 is a passivation layer and may insulate between the first and second electrodes 541 and 542 . 1, 7, and 8 , the passivation layer 550 may be filled in the open region h10 to separate the first and second electrodes 541 and 542 from each other. The protective layer 550 may be disposed between the first electrode 541 and the second bonding pad 571 to insulate them from each other. The protective layer 550 may be disposed between the second electrode 542 and the first bonding pad 571 to insulate them from each other. For example, the protective layer 550 may be made of an insulating material. For example, the protective layer 550 is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y (Here, 1≤x≤5, 1≤y≤5) may be formed of at least one material selected from the group consisting of. The protective layer 550 may extend to the outer portion 511b of the light emitting structure 510 to protect the surface of the light emitting structure 510 .

2 , 8 and 9 , the protective layer 550 has a first open region h5 disposed thereon, and the first open region h5 is provided to expose a portion of the first electrode 541 . can One or a plurality of first open regions h5 may be disposed in a region where the first bonding pad 571 and the first electrode 541 vertically overlap.

A second open region h6 may be disposed on the protective layer 550 , and the second open region h6 may expose a portion of the second electrode 542 . A plurality of the second open regions h6 may be disposed, and may be disposed in a region where the second bonding pad 572 and the second electrode 542 vertically overlap. One or a plurality of second open areas h6 may be disposed. The number of the second open regions h6 is greater than the number of the first open regions h5 , so that the current injection efficiency into the second electrode 542 may be improved.

The protective layer 550 may include third contact portions 552 extending in each of the first through holes h4 of the second electrode 542 , as shown in FIGS. 2 , 7 and 8 . The third contact portion 552 may be in contact with the upper surface of the reflective layer 560 through the first through hole h4, respectively. The third contact portion 552 may be in contact with the second electrode 560 disposed around the first through hole h4. The third contact portion 552 may be in contact with the reflective layer 560 through the first through hole h4 in the fourth extension portion 542b of the second electrode 542 .

The third contact portion 552 of the protective layer 550 may be in contact with the reflective layer 560 through the first through hole h4, respectively. Accordingly, the reflective layer 560 may include a region in contact with the protective layer 550 made of an insulating material and a region in contact with the second electrode 542 .

2, 3, and 8 , a concave concave portion 552a may be disposed on the third contact portion 552 of the protective layer 550 . The concave portion 552a may have an increased bonding area with the first resins 16 and 260 on the packages of FIGS. 13 and 14 .

<Bonding pad>

2, 10, and 11 , the bonding pad may include a first bonding pad 571 and a second bonding pad 572 spaced apart from each other in the first direction (x). The first and second bonding pads 571 and 572 may be disposed on the passivation layer 550 . The first bonding pad 571 may vertically overlap the reflective layer 560 , the first electrode 541 , and the first extension 542a of the first electrode 542 . A portion k3 of the first bonding pad 571 may be in contact with and electrically connected to the first electrode 541 through the first open region h5 of the passivation layer 550 . One or a plurality of the first open regions h5 may be disposed on each of the first electrodes 541 . The first open area h5 and the opening h2 may be disposed so as not to overlap in a vertical direction. When the first open region h5 and the opening h2 of the reflective layer 56 overlap in a vertical direction, a current concentration problem may occur. A top area of the first open region h5 may be larger than a top area of the opening h2 .

The second bonding pad 572 may vertically overlap the second open region h6 of the passivation layer 550 . A portion k4 of the second bonding pad 572 may be in contact with and electrically connected to the second electrode 542 through the second open region h6 . The second open region h6 of the protective layer 550 may be disposed so as not to overlap the through hole h3 of the reflective layer 560 in a vertical direction. When the second open region h6 of the protective layer 550 and the through hole h3 of the reflective layer 560 overlap in the vertical direction, the second contact portion k2 of the second electrode 542 is formed. Current concentration problems may occur.

For example, the first bonding pad 571 and the second bonding pad 572 may include at least one of Au and AuTi. The first bonding pad 571 and the second bonding pad 572 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au , Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, etc. can be

The light emitting device 500 may have a length in the first direction greater than a length in the second direction. The length of the light emitting device 500 in the first direction may be 800 micrometers or more, for example, in the range of 800 to 2000 micrometers, and the length in the second direction may be in the range of 400 to 1500 micrometers. The length of the first and second bonding pads 571 and 572 in the second direction may be greater than the length in the first direction. At least one or both of the first bonding pads 571 and 572 may have a length in the range of 200 to 400 micrometers in the first direction, and the length in the second direction may be 1.5 times or more of the length in the first direction, for example, It may be arranged in the range of 1.5 times to 2.5 times.

A distance between the first and second bonding pads 571 and 572 may be equal to or greater than a length of the first bonding pads 571 and 572 in the first direction. The distance between the first and second bonding pads 571 and 572 may be one or more times the length of the first and second bonding pads 571 and 572 in the first direction, for example, in the range of 1 to 2 times. When the distance between the first and second bonding pads 571 and 572 is equal to or greater than the length of the first and second bonding pads 571 and 572 in the first direction, loss of light incident through the center region Ac is reduced and It can increase the reflection efficiency.

11 is another example of the light emitting device of FIG. 1 and is an example in which the number of first through holes is increased.

2 and 11 , the area of the lower surface of the first through hole h4 compared to the area of the lower surface of the second electrode 542 in the center region Ac of the light emitting device may be 20% or more, for example, 20% to 70%. When the ratio is 20% or more, reflectivity may be further improved. The lower surface area of the second electrode 542 in the center region Ac may be an area in contact with the reflective layer 560 or an area in contact with the upper surface of the reflective layer 560 . The lower surface area of the first through hole h4 in the center region Ac may be an area in contact with the reflective layer 560 , for example, an area in contact with the upper surface of the reflective layer 560 . The lower surface area of the first through hole h4 in the center region Ac is the contact area between the third contact part 552 of the protective layer 550 and the reflective layer 55 or the area of the reflective layer 560 . It may be an area in contact with the upper surface. Since the contact area between the third contact portion 552 of the protective layer 550 and the reflective layer 560 is increased more than twice as compared to the structure of FIG. 1 , reflectivity may also be increased by 1.5 times or more. The number of arrangement of the first through hole h4 or the third contact portion 552 may be set according to whether the forward voltage is increased and the degree of improvement in reflectivity.

The first through hole h4 or the third contact portion 552 may be arranged with a uniform interval or may be arranged with a non-uniform interval.

The number of the third contact portions 552 in the center region Ac of FIG. 1 may be three times or more than the number of the first contact portions. The number of the third contact portions 552 in the center region Ac of FIG. 1 may be twice or more than the number of the second contact portions. Comparing the number of contact portions in the center region Ac, the first contact portion < second contact portion < third contact portion may be in the order of the number of contact portions. An area of the center region may be larger than an area of a bottom surface or an area of a top surface of each of the first and second bonding pads 571 and 572 .

In an embodiment of the invention, the ratio of the area of the lower surface of the second electrode 542 to the area of the upper surface of the light emitting structure 510 may be 85% or less, for example, in the range of 65% to 85%, or in the range of 65% to 80%. have. The upper surface area of the light emitting structure 510 is the upper surface area of the second conductive semiconductor layer 513 , the upper surface area of the first conductive semiconductor layer 511 , or the lower surface area or upper surface of the light emitting device 500 . It can be an area. The lower surface area of the second electrode 542 may be an area in contact with the upper surface of the reflective layer 560 . By providing the ratio of the area of the lower surface of the second electrode 542 to 85% or less compared to the area of the lower surface or the upper surface of the light emitting device 500 , a decrease in current diffusion may be prevented and reflectivity may be improved.

According to the embodiment of the present invention, light loss in the center region Ac of the light emitting device 500 may be reduced. To this end, by adjusting the ratio between the area of the lower surface of the second electrode 542 in the center region Ac and the area of the lower surface of the first through hole h4, a decrease in current diffusion may be minimized and reflectivity may be improved. . Here, the center region Ac of the second electrode 542 may be a region of the fourth extension 541b of the second electrode 542 .

Referring to FIGS. 1 and 3 , looking at the reflective structure of the center region Ac of the light emitting device 500 , the first reflective structure is a stacked structure of a reflective layer/protective layer, and the second reflective structure is a reflective layer/second electrode. may have a stacked structure of The first reflective structure may reflect the reflectivity of some light L1 generated in the light emitting structure 510 and transmitted through the reflective layer 560 or DBR without loss, and the second reflective structure may be the reflective layer 560 . ) or light transmitted through the DBR is absorbed at the surface of the second electrode 542 to reduce reflectivity. An embodiment of the present invention may increase the ratio of the first reflective structure and decrease the ratio of the second reflective structure to improve reflectivity and minimize a decrease in current diffusion.

The area of the lower surface of the first through hole h4 compared to the area of the lower surface of the second electrode 542 in the center region Ac of the light emitting device 500 may be 10% or more, for example, 10% to 70% It can be arranged in a ratio of a range. When the ratio is less than 10%, there is no synergistic effect of the light output (Po), and when the ratio is greater than 70%, there is a problem in that the current diffusion decreases and the forward voltage increases. The lower surface area of the second electrode 542 in the center region Ac may be an area in contact with the reflective layer 560 or an area in contact with the upper surface of the reflective layer 560 . The lower surface area of the first through hole h4 in the center region Ac may be an area in contact with the reflective layer 560 , for example, an area in contact with the upper surface of the reflective layer 560 . The lower surface area of the first through hole h4 in the center region Ac is the contact area between the third contact part 552 of the protective layer 550 and the reflective layer 55 or the area of the reflective layer 560 . It may be an area in contact with the upper surface.

15 is an example of reflectivity according to the incidence angle of each sample of the reflective structure in a comparative example, and FIG. 16 is an example of the reflectivity according to the incidence angle of each sample of the reflective structure according to an embodiment of the present invention.

In FIG. 15, Sample 1 (Rg1) of Comparative Example is the reflectivity in the Ag/DBR stacked structure, Sample 2 (Rg2) is the ITO/DBR stacked structure, and Sample 3 (Rg3) is an ITO/SiO ₂ /DBR stacked structure, It can be seen that the average reflectivity of sample 3 (Rg3) is higher than that of other samples. Here, in the samples, an insulating layer, such as SiO ₂ , may be further disposed between the conductive layer and the reflective layer, or a lower layer of the DBR may be SiO ₂ .

Looking at the incident angle for each region of the reflective structure of the embodiment in FIG. 16 , sample 4 (Rg4) is DBR/Air, sample 5 (Rg5) has a structure of DBR/Cr/Al, and sample 6 (Rg6) is DBR/Cr It is a layered structure. Here, DBR is a reflective layer, Cr/Al or Cr is a partial layer of the second electrode, and DBR/Air is a reflective structure in a region corresponding to the first through hole h4. Here, it can be seen that sample 4 (Rg4) is a region in which other metals are not stacked on the DBR, and has a higher reflectivity than that of other samples 5 and 6 . That is, in the embodiment of the present invention, the DBR/Air stacked structure may correspond to the contact structure of the DBR/protective layer, and the DBR/Cr stacked structure may correspond to the contact structure of the DBR and the second electrode. Accordingly, it can be seen that as the contact structure of the DBR/protective layer increases, the reflectivity of the light emitting device increases. Here, an insulating layer or SiO ₂ may be partially disposed between the DBR and the ITO.

The light emitting device according to the embodiment of the present invention has a reflective structure as shown in FIGS. 1 and 2, and when the device of the comparative example has a structure without a first through hole in the second electrode, the light output ( Po) may be increased by 100.3% or more compared to the device of the comparative example (in the case of a reflectivity of 100% as a reference), and may be increased by 100.6% or more in the structure shown in FIG. 11 .

The light emitting device according to an embodiment of the present invention may be mounted in the form of a flip chip. In this case, the reflective structure may be disposed under the light emitting device, that is, under the light emitting structure. Some light generated from the light emitting structure may be reflected through the reflective structure and emitted through the surface of the substrate or the side surface of the light emitting structure. At this time, the light output may vary depending on the reflectivity of the reflective structure, and in the embodiment of the present invention, the third contact portion of the protective layer is disposed in the fourth through hole in the second electrode, thereby improving reflectivity and light output. .

In the structures of FIGS. 1 and 11 , the light emitting device 500 may include one or a plurality of light emitting cells according to a driving region of the light emitting structure 510 . The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series with each other in one light emitting device. Accordingly, the light emitting device may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, the light emitting device may be driven with an n-fold driving voltage. For example, when a driving voltage of one light emitting cell is 3V and two light emitting cells are disposed in one light emitting device, each light emitting device may be driven with a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and the three light emitting cells are disposed in one light emitting device, each light emitting device may be driven with a driving voltage of 9V. The number of light emitting cells disposed in the light emitting device may be 1 or 2 to 5.

12 and 13 are a perspective view and a side view of a light emitting device according to an embodiment of the present invention.

12 and 13 , the light emitting device package 100 may include a package body 110 and the light emitting device 120 disclosed above.

The package body 110 may include a body 115 and a plurality of frames 111 and 113 . The plurality of frames may include, for example, a first frame 111 and a second frame 113 .

The body 115 may be disposed between the plurality of frames 111 and 113 . The body 115 may be coupled to a plurality of frames 111 and 113 . The body 115 may be disposed between the first frame 111 and the second frame 113 . The body 115 may function as an electrode separation line between the first and second frames 111 and 113 . The body 115 may be referred to as an insulating member.

The body 115 may provide an inclined surface disposed on the first frame 111 and the second frame 113 . The cavity 102 may be provided on the first frame 111 and the second frame 113 by the inclined surface of the body 115 . The body 115 may include an upper body 110A having a cavity 102 . The body 115 and the upper body 110A may be formed of the same material or may be made of different materials. The upper body 110A may be formed integrally with the body 115 or may be formed separately.

For example, the body 115 may be made of a resin material or an insulating resin material. The body 115 may include polyphthalamide (PPA), polychloro triphenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy, epoxy molding compound (EMC), and silicone. It may be formed of at least one selected from a group including a molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ). The body 115 may be formed of a resin material, and may include a filler made of a high refractive material such as TiO ₂ and SiO ₂ therein. The body 115 may be formed of a thermoplastic resin, and since the thermoplastic resin is a material that softens when heated and hardens again when cooled, when the frames 111 and 113 and the materials in contact with them expand or contract by heat. The body 115 may act as a buffer. At this time, when the body 115 performs the buffering action, it is possible to prevent damage to conductive layers such as solder paste, Ag paste, and SAC (Sn-Ag-Cu) paste. In the package, a coefficient of thermal expansion (CTE) according to thermal expansion and contraction may be greater in the first direction than in the second direction. The body 115 may include a PCT or PPA material, and the PCT or PPA material has a high melting point and is a thermoplastic resin.

The upper body 110A may provide an inclined side surface 132 around the cavity 102 . The height Z2 of the lower side 134 of the cavity 102 may be 100 micrometers or more, for example, in the range of 100 to 200 micrometers, to face the side surface of the light emitting device 120 .

13 , in the body 115 , a concave first recess R1 may be disposed in at least one of an upper portion and a lower portion between the frames 111 and 113 . The first recess R1 may cushion the body 115 when the frames 111 and 113 and surrounding materials thermally expand or contract in one direction. The first recess R1 may be disposed in a direction perpendicular to a direction in which the thermal expansion or contraction is large. The recess R1 of the body 115 may be disposed to have a long length in the second direction, thereby buffering thermal expansion or contraction in the first direction. The first recess R1 of the body 115 cushions thermal expansion or contraction in the first direction, thereby suppressing or preventing cracking of the frames 111 and 113 and the conductive layer or paste member attached thereon. can do.

The depth Zc of the first recess R1 may be 50% or more of the thickness T2 of the first and second frames 111 and 113 , for example, in a range of 50% to 80%. The depth Zc of the first recess R1 may be 125 micrometers or more, for example, in the range of 125 to 200 micrometers. Solder cracks caused by thermal deformation of the body 115 can be suppressed by the depth Zc of the first recess R1 and the lower cracks of the body 115 between the two frames 111 and 113 can be prevented. can When the first recess R1 is smaller than the range of the depth Zc, the buffering role may be insignificant, and when it is larger than the range, the breaking strength at the center side may be reduced.

The connecting portion Rr of the body 115 is a portion of the body under the first recess R1, and the minimum thickness thereof may be 45 micrometers or more, for example, 45 to 55 micrometers. The minimum thickness a4 of the connecting portion Rr of the body 115 may be 0.25 or less, for example, 0.15 to 0.25, based on the thickness T2 of the first and second frames 111 and 113 . The minimum thickness a4 of the connection part Rr may be 55 micrometers or less, for example, in the range of 45 to 55 micrometers. By providing the connection portion Rr of the body 115 with a minimum thickness, when thermal deformation occurs by the first and second frames 111 and 113, the body 115 is supported and buffered with the minimum thickness. can In this case, the body 114 may be softened or hardened according to a temperature change in which the body 115 is a thermoplastic resin, thereby providing a buffer, thereby preventing a problem in which the connection portion Rr is damaged.

If there is no recess in the body 115, solder cracks may occur due to the impact transferred to the solder due to thermal deformation of the frame, and if such thermal deformation is repeated, the body between the two frames may be damaged. can be The embodiment of the present invention can solve the above-mentioned problem by securing the thickness of the conductive layer 333 and using a structure for alleviating thermal deformation of the body. An embodiment of the invention is disposed between the first frame 111 and the second frame 113 and reduces the volume of the body 115 located in an area overlapping the light emitting device 120 in the vertical direction, When thermal deformation is generated by the first and second frames 111 and 113 , the body 115 may provide a buffer.

The first frame 111 and the second frame 113 may be provided as conductive frames. The conductive frame may include a metal such as copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver ( Ag), and may be formed as a single layer or a multilayer. The thickness T2 of the first and second frames 111 and 113 may be formed in consideration of heat dissipation characteristics and electrical conductivity characteristics, and may be formed in a range of 100 micrometers or more, for example, 100 to 300 micrometers.

The first extension portions 17 and 18 of the first frame 111 may extend in the direction of the first side S1 of the package body 110 and may protrude one or more. The second extension parts 37 and 38 of the second frame 113 may extend in the direction of the second side S2 of the package body 110 and may protrude one or more. The first and second extensions 17 , 18 , 37 , and 38 may be disposed in one or a plurality, and in the case of a plurality of extensions, may protrude from each frame 111 and 113 in a branched form.

13 , first and second bonding units 121 and 122 may be disposed on the lower portion of the light emitting device 120 . The first and second bonding portions 121 and 122 may be spaced apart from each other in the same direction as the first and second frames 111 and 113 , that is, in the first direction.

The first frame 111 may face or face the first bonding portion 121 of the light emitting device 120 , and the second frame 113 may be formed with a second bonding portion 122 of the light emitting device 120 . can be confronted with or opposed to. The first frame 111 and the first bonding part 121 may be bonded to each other using a conductive part or a paste member, and may be electrically connected. The second frame 113 and the second bonding unit 122 may be bonded to each other using a conductive member or a paste member, and may be electrically connected. Here, when the conductive part is disposed in a region between the first and second frames 111 and 113 and the first and second bonding parts 121 and 122 , a problem of lateral spreading may occur. To this end, spacers P1, P2, P3, and P4 may be disposed around the lower portion of the light emitting device 120 to space the light emitting device 120 apart from the upper surfaces of the first and second frames 111 and 113. . The spacers P1 , P2 , P3 , and P4 are formed for a region between the first frame 111 and the first bonding unit 121 and between the second frame 113 and the second bonding unit 122 . By securing the height, it is possible to make the thickness of the conductive part or the paste uniform.

The spacers P1 , P2 , P3 , and P4 may separate the light emitting device 120 from the upper surfaces of the frames 111 and 113 . The spacers P1 , P2 , P3 , and P4 may be disposed on an edge of a lower surface of the light emitting device 120 or may overlap the edge in a vertical direction. The spacers P1 , P2 , P3 , and P4 may be a material constituting the body 115 , or may be the same material as the body 115 . As another example, the spacers P1 , P2 , P3 , and P4 may be formed of a material constituting the frames 111 and 113 , or may be formed of the same material as the frames 111 and 113 . The number of the spacers P1, P2, P3, and P4 may be three or more or four or more. The spacers P1, P2, P3, and P4 provide a gap between the upper surfaces of the light emitting device 120 and the frame 111 and 113, so that the bonding portions 121 and 122 of the light emitting device 120 and the frame ( 111 and 113), it is possible to prevent a problem in which the light emitting device 120 is tilted by the liquid conductive part or paste placed between the upper surfaces. The spacers P1 , P2 , P3 , and P4 may provide a space for facilitating the unpainting process by separating the light emitting device 120 from the upper surface of the frame.

The spacers P1 , P2 , P3 , and P4 include first and second spacers P1 and P2 disposed on the first frame 111 , and third and third spacers disposed on the second frame 113 . It may include four spacers (P3, P4). The first and second spacers P1 and P2 protrude from the body 115 in both sides of the first frame 111 in the second direction, and the third and fourth spacers P3 and P4 are the first and second spacers P3 and P4. The second frame 113 may protrude from the body 115 in both sides in the second direction.

The first to fourth spacers P1, P2, P3, and P4 are formed of the same material as that of the body 115 to suppress the spreadability of the conductive part or paste, and the light emitting device 120 may be formed from the first and A predetermined distance from the upper surfaces of the second frames 111 and 113 may be provided. The thickness b3 of the first to fourth spacers P1, P2, P3, and P4 is a vertical distance from the upper surfaces of the first and second frames 111 and 113, and is 30 micrometers or more, for example, 30 to 65 It may be in the range of micrometers or in the range of 40 to 50 micrometers. When the thickness b3 of the first to fourth spacers P1, P2, P3, and P4 is smaller than the above range, it is difficult to secure the thickness of the conductive part, so that cracks are generated in the conductive part or the electrical conductivity or thermal conductivity properties are lowered If it is larger than the above range, the amount of application of the conductive part may be increased and a problem of penetrating into other areas may occur.

The first to fourth spacers P1 , P2 , P3 , and P4 may have the same thickness b3 . The first to fourth spacers P1 , P2 , P3 , and P4 may have a top view shape including a circular shape, a polygonal shape, an elliptical shape, or a polygonal shape with rounded corners.

A width of the first to fourth spacers P1 , P2 , P3 , and P4 may be 150 micrometers or more in the second direction, for example, 150 to 300 micrometers. The widths in the second direction of the first to fourth spacers P1 , P2 , P3 , and P4 are arranged in the above range to partially overlap the lower portion of the light emitting device 120 and to face the light emitting device 120 . can

According to an embodiment of the present invention, the light emitting device 120 is a light emitting device disclosed in the embodiment, and may include a first bonding unit 121 , a second bonding unit 122 , and a light emitting structure 123 . The light emitting device 120 may include a substrate 124 . The light emitting device 120 may have a length in the first direction equal to or longer than a length in the second direction. The first bonding unit 121 may be the above-described first bonding pad, and the second bonding unit 122 may be the above-described second bonding pad. The light emitting device 120 may include a lower reflective structure 120A, and in the center region Ac of the reflective structure 120A, the above-described second electrode and the reflective layer or DBR may have a contact ratio. Accordingly, reflectivity by the reflective structure 120A may be improved.

On the other hand, the cavity 102 has a sub-cavity 133A formed on an inner surface adjacent to the third side or the fourth side among the inner surfaces, and first and second frames 111 and 113 are formed at the bottom of the sub-cavity 133A. part of it may be exposed. A first frame 111 and a second frame 113 are exposed in the sub-cavity 113A, a protection element 125 is disposed on one of the exposed frames, and a wire 126 is electrically connected to the other frame. can be connected A reflective resin 135 is disposed in the sub-cavity 133A, and the reflective resin 135 seals the protection element 125 and the wire 126 . The reflective resin 135 may be formed of a resin material such as silicone or epoxy, and may include a high refractive filler therein.

The light emitting device package 100 of the present invention may include a first resin 160 between the body 115 and the light emitting device 120 . The first resin 160 may include an adhesive material and/or a reflective material. The first resin 160 may be disposed between the body 115 and the light emitting device 120 . The first resin 160 may be disposed between the upper surface of the body 115 and the lower surface of the light emitting device 120 . The first resin 160 may overlap the light emitting device 120 in a vertical Z-axis direction. For example, the first resin 160 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. can Also, as an example, when the first resin 160 includes a reflective function, the adhesive may include white silicone. When the first resin 160 includes a reflective function, the first resin 160 may include a filler such as TiO ₂ , SiO ₂ , or Al ₂ O ₃ therein.

The first resin 160 may be adhered to the light emitting device 120 and the body 115 . The first resin 160 may be disposed between the first bonding portion 121 and the second bonding portion 122 of the light emitting device 120 or may be in contact with the first and second bonding portions 121 and 122 . . The first resin 160 may be adhered to the area between the lower surface of the light emitting device 120 and the frames 111 and 113 and to the area between the light emitting device 120 and the body 115 . Accordingly, the first resin 160 may strengthen the lower adhesive force and the supporting force of the light emitting device 120 . In a process of bonding the bonding portions 121 and 122 of the light emitting device 120 or when bonding to a circuit board, a problem in which the light emitting device 120 is tilted by the conductive layer 333 can be prevented. The first resin 160 may be formed of a reflective resin material to diffuse light and improve reflection efficiency. The first resin 160 may be disposed in the first recess R1 . The first resin 160 disposed in the first recess R1 may function as a support protrusion.

The first resin 160 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 115 . The first resin 160 is, for example, in direct contact with the upper surface of the body 115, disposed in the first recess R1, and in contact with the lower surface of the light emitting device 120, the light emitting device (120) can be fixed.

Each of the frames 111 and 113 and each of the bonding portions 121 and 122 may be coupled to each other by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x satisfies the conditions of 0<x<1, y=1-x, x>y. can A conductive part or paste may be disposed between each of the frames 111 and 113 and each of the bonding parts 121 and 122 , and the conductive part or paste is Ag, Au, Pt, Sn, Cu, Zn, In, Bi, contact, Ti, etc. It may include one material selected from the group containing or an alloy thereof. The conductive part is a solder paste, and may be formed of powder particles or a mixture of particle particles and flux. The solder paste may include Sn-Ag-Cu, and the weight % of each metal may vary. The conductive part may include SAC (Sn-Ag-Cu) or a SAC-based material.

The light emitting device package 100 according to an embodiment of the present invention may include a molding part 190 . The molding part 190 may be provided on the light emitting device 120 . The molding part 190 may be disposed on the first frame 111 and the second frame 113 . The molding part 190 may be disposed in the cavity 102 provided by the package body 110 .

The molding part 190 may include an insulating material. In addition, the molding unit 190 may include a wavelength converting means for receiving the light emitted from the light emitting device 120 and providing the wavelength-converted light. For example, the molding part 190 may be formed of at least one selected from a group including a phosphor, a quantum dot, and the like. The light emitting device 120 may emit blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dots may emit blue, green, or red light. The molding part 190 may not be formed.

The light emitting device package 100 may be supplied by being mounted on a sub-mount or a circuit board. However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon may occur in the bonding region between the light emitting device and the lead frame provided in the light emitting device package, so that the stability of electrical connection and physical bonding may be weakened.

14 is another example of a package having a light emitting device according to an embodiment of the present invention. In the description of FIG. 14 , the same configuration as the above configuration may be selectively applied.

Referring to FIG. 14 , the light emitting device package may include a body 210 and the light emitting device 120 disclosed in the embodiment.

The body 210 may include a first body 215 and a second body 210A. The second body 210A may provide a cavity 202 above the upper portion of the first body 215 . The cavity 202 may include a bottom surface and a side surface 232 inclined with respect to the top surface of the body 210 at the bottom surface.

For example, the body 210 may be made of a resin material or an insulating resin material. The body 210 may include polyphthalamide (PPA), polychloro triphenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy, epoxy molding compound (EMC), and silicone. It may be formed of at least one selected from a group including a molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ). The body 210 may be formed of a resin material, and may include a filler made of a high refractive material such as TiO ₂ and SiO ₂ therein. The body 210 may be formed of a thermoplastic resin.

The body 210 may be formed of an insulating material. Since the body 210 has a structure in which the metal frame is removed from the upper surface or the bottom of the cavity 202 , the selection of body material may be wider than that of a structure having a metal frame. Since the body 210 is not integrally injected with a metal frame, for example, a lead frame, the thickness of the metal part may be provided to be thinner than the thickness of the lead frame. Since the body 210 is not injected in advance with the lead frame, it is easy to change the position of the through hole of the body 210, the shape of the cavity 202, the size of the body 210, or the design change for the package size. have.

The thickness of the body 200 may be 100 micrometers or more, for example, in the range of 100 to 800 micrometers. The thickness of the body 200 may be the sum of the thickness of the first body 215 and the thickness of the second body 210A, and the thickness of the second body 210A is equal to or greater than the thickness of the light emitting device 120 . can The upper surface of the second body 210A may be disposed at a position equal to or higher than the upper surface of the light emitting device 120 for distribution of a beam angle of light.

The body 210 may have through holes TH1 and TH2. The through holes TH1 and TH2 may include first and second through holes TH1 and TH2 spaced apart from each other. The first and second through holes TH1 and TH2 may pass through the lower surface of the upper surface of the body 210 disposed under the light emitting device 120 . The first and second through holes TH1 and TH2 may pass through the lower surface of the first body 215 from the upper surface. The first and second through holes TH1 and TH2 may penetrate from the bottom of the cavity 202 to the lower surface of the first body 215 . The first and second through-holes TH1 and TH2 may penetrate in a direction from the upper surface of the body 210 to the lower surface.

The depths of the first and through holes TH1 and TH2 may be the same as the thickness of the first body 215 . The thickness of the first body 215 may be greater than the thickness of the metal parts 211 and 213 , that is, the thickness in the horizontal direction at the through holes TH1 and TH2 . A gap between the upper and lower surfaces of the body 210 disposed under the light emitting device 120 may be greater than the thickness of the metal parts 211 and 213 , that is, the horizontal thickness of the through hole. A depth of the first and second through holes TH1 and TH2 may be greater than a thickness of the metal parts 211 and 213 .

The first and second through-holes TH1 and TH2 may be disposed in a region overlapping the region of the light emitting device 120 in a vertical direction. The top view shape of the first and second through holes TH1 and TH2 may include at least one of a circular shape, an elliptical shape, a polygonal shape, and an irregular shape having straight lines and curves. The upper length of the first and second through-holes TH1 and TH2 may be provided to have the same length in the first direction and the second direction, or may be provided to have a longer length in either direction. The lower lengths of the first and second through holes TH1 and TH2 may be provided to have the same length in the first direction and the second direction, or may be provided to have a longer length in either direction.

One or a plurality of the first through holes TH1 may be disposed under the first bonding portion 221 of the light emitting device 120 . One or a plurality of the second through holes TH2 may be disposed under the second bonding portion 222 of the light emitting device 120 . The first and second through holes TH1 and TH2 may have the same upper shape and the same lower shape. As another example, the upper and lower shapes of the first and second through holes TH1 and TH2 may be different from each other. An upper shape and a lower shape of the first and second through holes TH1 and TH2 may be symmetrical. An upper shape and a lower shape of the first and second through holes TH1 and TH2 may be asymmetrical. The first and second through holes TH1 and TH2 may be disposed on a vertical straight line in which the center of the upper shape and the center of the lower shape are the same in at least one of the first direction and the second direction, or may be disposed on different vertical straight lines. can The first and second bonding portions 221 and 122 may be spaced apart from each other in the same direction as the first and second through holes TH1 and TH2.

In the light emitting device package according to an embodiment of the present invention, a predetermined gap may be disposed in a region between the body 210 and the light emitting device 120 . The height of the gap may be equal to or greater than the thickness of the first and second bonding portions 221 and 122 . A first resin 260 may be disposed in the gap. The first resin 260 may be disposed in a region between the first and second bonding portions 221 and 122 and between the lower surface of the light emitting device 120 and the upper surface of the body 210 . The first resin 260 may be disposed in an area between the first and second bonding parts 221 and 122 and between the lower surface of the light emitting device 120 and the upper surface of the first body 215 or the bottom of the cavity. can The first resin 260 may attach the light emitting device 120 to the body 210 . The first resin 260 may include a resin material such as silicone or epoxy. The first resin 260 may include a metal oxide or a filler therein. For example, the first resin 260 may be formed of a material including a metal oxide or impurities such as TiO ₂ , SiO ₂ , Al ₂ O ₃ . The first resin 260 is dispensed under the light emitting device 120 before the conductive part shown in FIG. 28 is formed to attach and fix the light emitting device 120 on the first body 215 . can do it Accordingly, it is possible to prevent the movement or tilt of the light emitting device 120 . Also, the first resin 260 may fix the light emitting device 120 to the first body 215 even when the conductive part is remelted.

When light is emitted to the lower surface of the light emitting device 120 , the first resin 260 may provide a light diffusion function between the light emitting device 120 and the body 210 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the first resin 260 provides a light diffusion function, thereby improving light extraction efficiency of the light emitting device package. In addition, the first resin 260 may reflect the light emitted from the light emitting device 120 . For example, when the first resin 260 includes a reflective function, the first resin 260 may be made of a material including a metal oxide or impurities such as TiO ₂ , SiO ₂ , Al ₂ O ₃ . can

The light emitting device package according to an embodiment of the present invention may include metal parts 211 and 213 . The metal parts 211 and 213 may include first and second metal parts 211 and 213 spaced apart from each other. The first metal part 211 and the second metal part 213 may be physically separated. The first metal part 211 and the second metal part 213 may be disposed so as not to overlap in the vertical direction or the Z direction.

The first metal part 211 may be disposed on at least one or both of the surface of the first through hole TH1 and the bottom of the body 210 . The second metal part 213 may be disposed on at least one or both of the surface of the second through hole TH2 and the bottom of the body 210 . The first metal part 211 may be disposed on the entire surface of the first through hole TH1 . The second metal part 213 may be disposed on the entire surface of the second through hole TH2 . The first metal part 211 may be exposed on an upper surface of the first through hole TH1 . The second metal part 213 may be exposed on the upper surface of the second through hole TH2 . The upper surface of the first metal part 211 may be disposed on the same plane as the upper surface of the body 210 disposed under the light emitting device 120 in the upper surface of the first through hole TH1. The upper surface of the second metal part 213 may be disposed on the same plane as the upper surface of the body 210 disposed under the light emitting device 120 in the upper surface of the second through hole TH2. The first and second metal parts 211 and 213 may be disposed around the first and second through holes TH1 and TH2. The inner holes of the first and second metal parts 211 and 213 may be center holes or inner holes of the first and second through holes TH1 and TH2 passing in the vertical direction.

The thickness of the first metal part 211 may be less than 1/2 of the width of the upper portion of the first through hole TH1 or the width in the first and second directions, whichever is smaller, in this case, the first metal part The inside of the 211 may be provided in a structure in which a hole is disposed at the center of the first through hole TH1 . The thickness of the second metal part 213 may be less than 1/2 of the width of the upper portion of the second through hole TH2 or the width in the first and second directions, whichever is smaller, in this case, the second metal part The inside of the 213 may be provided in a structure in which a hole is disposed at the center of the second through hole TH2 . A total thickness of the first metal part 211 and the second metal part 213 may be smaller than an upper width of the first or second through hole TH1 in the first and second directions. In this case, the first and second metal parts 211 and 213 have the same thickness.

The first metal part 211 and the second metal part 213 may be made of metal. The first and second metal parts 211 and 213 may include, for example, copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), It may be selected from tin (Sn) and silver (Ag), and may be formed as a single layer or multiple layers. The first metal part 211 and the second metal part 213 are multi-layered, and may include a first layer in contact with the body 210 and a second layer below the first layer, The first layer may include at least one of Ti, Cr, Ta, and Pt, and the second layer may include at least one of Au, Ag, and Cu.

The thickness of the first and second metal parts 211 and 213 may be smaller than the thickness between the upper surface and the lower surface of the body 210 disposed under the light emitting device 120 . The metal parts 211 and 213 may be formed in a thin thickness by forming the metal parts 211 and 213 on the surface of the body 210 through a metal deposition process or a plating process. Since the light emitting device package according to an embodiment of the present invention does not integrally inject the lead frame and the body, it is possible to solve the problem caused by the difference in the coefficient of thermal expansion between the two materials when the lead frame and the body disposed under the light emitting device are combined. In addition, by performing a deposition process or a plating process using a metal on the surfaces of the through-holes TH1 and TH2 provided in advance in the body 210, the thickness of the metal part is 1/3 or less of the upper width of the through-hole in the first direction. can That is, when the thickness of the metal portion is 1/3 or more of the upper width of the through hole, it is difficult to secure the upper width of the through hole, so that the contact area between the bonding portion and the conductive portion may be reduced.

The thickness of the first and second metal parts 211 and 213 may be 5 micrometers or less, for example, in the range of 2 to 5 micrometers. When the thickness of the metal parts 211 and 213 is greater than the above range, improvement in thermal conductivity or electrical conductivity is insignificant, and when the thickness is less than the above range, heat dissipation efficiency or electrical conductivity may be reduced. The first and second metal parts 211 and 213 may be formed on the surface of the body 210 through a deposition process or a plating process.

As another example, the first metal part 211 may be disposed on a portion of the surface of the first through hole TH1 . The first metal part 211 may be disposed on a region of the surface of the first through hole TH1 that is closer to the first side S1 than the second side S2 . The second metal part 213 may be disposed on a portion of the surface of the second through hole TH2 . The second metal part 213 may be disposed on a region of the surface of the second through hole TH2 that is closer to the second side surface S2 than the first side surface S1 . A distance between the first and second metal parts 211 and 213 disposed in the first and second through holes TH1 and TH2 may be greater than a distance between centers of the first and second through holes TH1 and TH2. . A distance between the first and second metal parts 211 and 213 disposed in the first and second through holes TH1 and TH2 may be greater than a distance between centers of the first and second through holes TH1 and TH2. .

The first metal part 211 may include a first extension part 211B extending to the bottom of the body 210 . The first extension part 211B may extend from the first metal part 211 . The first extension portion 211B may extend from the first metal portion 211 disposed in the first through hole TH1. The area of the lower surface of the first extension 211B may be less than or equal to 1/2 of the bottom area of the body 210, for example, in the range of 1/2 to 1/5. The first metal part 211 and the first extension part 211B may have the same stacked structure.

The second metal part 213 may include a second extension part 213B extending to the bottom of the body 210 . The second extension portion 213B may extend from the second metal portion 213 . The second extension portion 213B may extend from the second metal portion 213 disposed in the second through hole TH2. The lower surface area of the second extension part 213B may be less than 1/2 of the bottom area of the body 210, for example, in the range of 1/2 to 1/5. The second metal part 213 and the second extension part 213B may be formed in the same stacked structure.

A lower surface of the body 210, that is, a lower surface of the first body 215, may be exposed between the first and second extension parts 211B and 213B. A lower surface of the body 210 disposed between the first and second metal parts 211 and 213 may include a concave recess R5. The concave portion R5 is concave from the lower surface of the body 210 to the upper surface direction, and may include a curved surface or an angled surface. A surface of the concave portion R5 may include a rough surface. The concave portion R5 is a region from which the first and second extension portions 211B and 213B are removed, and may electrically separate the first and second metal portions 211 and 213 . The concave portion R5 may be a region separated into two metal parts by forming a metal part through the lower part of the body and then removing a portion of the metal part through a laser scribing process. The depth of the concave portion R5 may be 1 micrometer or less, for example, 0.01 to 1 micrometer. The depth of the concave portion R5 may be less than or equal to the thickness of the metal portions 211 and 213 . When the depth of the concave portion R5 is greater than the above range, the rigidity between the first and second through holes TH1 and TH2 may be reduced.

The first and second metal parts 211 and 213 may be connected to the first and second bonding parts 221 and 122 . The first metal part 211 may be in contact with or connected to the first bonding part 221 . The second metal part 213 may be in contact with or connected to the second bonding part 222 . A metal or an intermetallic compound (IMC) layer may be disposed at an interface between the first and second metal parts 211 and 213 and the first and second bonding parts 221 and 122 . The metal or intermetallic compound layer may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x is 0<x<1, y=1-x, x>y. can be satisfied In addition, conductive parts may be disposed in the first and second through holes TH1 and TH2. The conductive part may include, for example, a conductive paste such as a solder paste or a silver paste. The conductive part may connect the metal parts 211 and 213 and the bonding parts 221 and 122 . The conductive part may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, or the like or an alloy thereof. The conductive part may include at least one of Cu _x Sn _y -based, Ag _x Sn _y -based, Au _x Sn _y -based _{, and} SAC-based paste, where x is 0<x<1, y=1-x, x> condition of y can be satisfied. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy.

The light emitting device package according to an embodiment of the present invention may include a molding part 290 . The molding part 290 will be described with reference to FIGS. 12 and 13 .

The first bonding unit 221 and the second bonding unit 222 of the light emitting device 120 according to an embodiment of the present invention may receive driving power through the first and second metal parts 211 and 213 and the conductive part. In addition, the melting point of the conductive portion may be selected to have a higher value than the melting point of other bonding materials. The light emitting device package 200 may be supplied by being mounted on a sub-mount or a circuit board. However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon may occur in the bonding region between the conductive portion provided in the light emitting device package and the light emitting device, thereby weakening the stability of electrical connection and physical bonding. Therefore, even when the light emitting device package according to the embodiment is bonded to a circuit board or a main board through a reflow process, a re-melting phenomenon does not occur, so electrical connection and physical bonding force are not deteriorated. There is no advantage. In addition, according to the light emitting device package according to the embodiment, the body 210 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the body 210 from being damaged or discolored by exposure to high temperature.

In an embodiment of the present invention, the reflectivity in the center region may be improved by allowing the contact portion of the protective layer and the insulating reflective layer to contact the center region between the light emitting structure and the bonding pads in the light emitting device.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the embodiment, and those of ordinary skill in the art to which the embodiment pertains are provided with several examples not illustrated above within a range that does not depart from the essential characteristics of the embodiment. It can be seen that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

500: light emitting device, 510: light emitting structure: 541: first electrode, 542: second electrode
550: protective layer, 560: reflective layer, 571: first bonding pad, 572: second bonding pad
k1: first contact portion, k2: second contact portion, 552: third contact portion, h1: recess h2, h3, h4: through hole

Claims (9)

a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
a reflective layer made of an insulating material on the light emitting structure;
a first bonding pad and a second bonding pad spaced apart from each other on the reflective layer;
a first electrode extending from a first bonding region between the reflective layer and the first bonding pad to a second bonding region between the reflective layer and the second bonding pad;
a second electrode extending from a second bonding region between the reflective layer and the second bonding pad to a first bonding region between the reflective layer and the first bonding pad; and
A protective layer is included on the first and second electrodes,
The first electrode includes a plurality of first contact portions connected to the first conductivity-type semiconductor layer,
The second electrode includes a plurality of second contact portions connected to the second conductivity type semiconductor layer,
The second electrode includes a plurality of first through holes in a center region between the first and second bonding pads,
The protective layer is disposed in each of the plurality of first through-holes and includes a plurality of third contact portions in contact with the upper surface of the reflective layer. The method of claim 1, wherein in the center region between the first and second bonding pads, an area of a top surface of the reflective layer is greater than an area of a bottom surface of the first bonding pad or the second bonding pad,
The first electrode, the first contact portions, and the second contact portions are disposed in the center region between the first and second bonding pads. The light emitting device of claim 2 , wherein the number of the third contact portions in the center region between the first and second bonding pads is greater than the number of the first contact portions or the second contact portions. 4. The method of claim 3, wherein in the center region between the first and second bonding pads, a contact area between the third contact portions and the reflective layer has a ratio of 65% to 85% of a lower surface area of the second electrode, ,
The protective layer is a light emitting device including a plurality of concave portions each concave on each of the first through-holes. 5. The method of any one of claims 1 to 4, wherein the reflective layer comprises a DBR structure,
A conductive layer of a transparent material is included between the reflective layer and the light emitting structure,
The first bonding pad and the second bonding pad are spaced apart in a first direction,
Each of the first bonding pad and the second bonding pad has a length longer in a second direction than a length in the first direction,
The first electrode has a length in the first direction longer than the length in the second direction,
A plurality of the first electrodes are disposed in the second direction,
The plurality of third contact portions is a light emitting device spaced apart from the first and second contact portions.
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