KR102572525B1 - Light emitting device and light emitting device package including the same - Google Patents

Abstract

Embodiments relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device.
A light emitting device according to an embodiment includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode disposed on the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; a first bonding pad disposed on the first electrode and the second electrode and electrically connected to the first electrode; a second bonding pad disposed on the first electrode and the second electrode, spaced apart from the first bonding pad, and electrically connected to the second electrode; an ohmic contact layer disposed on an upper surface of the light emitting structure; a first reflective layer disposed between the ohmic contact layer and the first bonding pad; a second reflective layer disposed between the ohmic contact layer and the second bonding pad; a third reflective layer disposed to be spaced apart from the first reflective layer and the second reflective layer; and a protective layer disposed between the first reflective layer and the third reflective layer and between the second reflective layer and the third reflective layer.

Description

Light emitting device and light emitting device package including the same {LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME}

The embodiment relates to a semiconductor device, and more particularly, to a light emitting device, a light emitting device package, and a lighting device including the same.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials are developed in thin film growth technology and device materials to produce red, green, It has the advantage of being able to implement light in various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source with high efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when light receiving devices such as photodetectors or solar cells are manufactured using Group 3-5 or Group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, such a light-receiving element has advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) may be provided as, for example, a p-n junction diode having a characteristic of converting electrical energy into light energy using a group 3-5 element or a group 2-6 element on the periodic table, and a compound semiconductor Various wavelengths can be implemented by adjusting the composition ratio.

For example, nitride semiconductors are of great interest in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, red light emitting devices, and the like using nitride semiconductors are commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, as a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, in the wavelength range, in the case of a short wavelength, it is used for sterilization and purification, and in the case of a long wavelength, an exposure machine or a curing machine, etc. can be used

Ultraviolet light can be divided into three types in order of wavelength: UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm). UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit money discrimination, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm ~ 315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Among the prior art, in order to increase the light reflectance of a flip chip type light emitting device, an insulating reflective layer such as DBR (Distributed Bragg Reflector) in which TiOx and SiOx are alternately stacked is placed on the light emitting device, and electrical properties are improved For this purpose, an ohmic contact layer such as ITO is disposed.

However, according to the prior art, re-melting (re- melting) may occur.

In order to solve this problem, in the embodiment of the present invention, as shown in FIG. 2, the light emitting device 100 is mounted on the light emitting device package through the resin part 230, and the first and second openings TH1 of the first and second frames, The remelting problem may be improved by disposing the first and second bonding pads 171 and 172 of the light emitting device on TH2), respectively.

On the other hand, however, the first and second conductive layers 321 and 322 respectively disposed in the first and second openings TH1 and TH2 and the first and second bonding pads 171 and 172 may cause Through additional research, it was confirmed through TES that there is a problem of deterioration in light output due to the occurrence of a peeling phenomenon between the insulating reflective layer and the ohmic contact layer formed on the light emitting device.

For example, stress is applied to the DBR disposed on the bonding pad by stress between the first and second conductive layers 321 and 322 of the light emitting device package and the first and second bonding pads, so that ITO Separation may occur between the and DBR.

When a peeling phenomenon occurs between an insulating reflective layer such as DBR formed on a light emitting device and an ohmic contact layer such as ITO, electrical characteristics are greatly deteriorated, resulting in a decrease in light output. It was confirmed through research that there was a technical problem, and the present invention took it as a developing technical problem to solve it.

Meanwhile, in order to improve electrical and optical characteristics, an insulating reflective layer such as DBR and an ohmic contact layer such as ITO are necessary elements. Therefore, in the present invention, a method for improving the peeling phenomenon between the insulating reflective layer and the ohmic contact layer will be described.

In addition, a passivation layer is formed on the light emitting device package body and comes into contact with an ohmic contact layer such as ITO formed on the light emitting device.

However, stress is also applied to the ITO disposed on the bonding pad due to stress between the first and second conductive layers 321 and 322 of the light emitting device package and the first and second bonding pads, so that passivation and ITO A peeling phenomenon may occur between them, and this phenomenon has a problem in that electrical and optical reliability are greatly deteriorated.

In addition, according to the prior art, a high-temperature process such as reflow is applied when a light emitting device package is mounted on a submount or a circuit board. At this time, in the reflow process, bonding between the lead frame provided in the light emitting device package and the light emitting device A re-melting phenomenon occurs in the area, and the stability of electrical connection or physical bonding is weakened, resulting in problems in electrical and physical reliability.

In addition, according to the prior art, there is an issue of bonding strength between the light emitting device package body and the light emitting device, and accordingly, there is a reliability issue due to a decrease in bonding strength.

In addition, there is a problem in that light efficiency is lowered due to a light absorption issue according to the adjacent arrangement of a plurality of light emitting devices in the light emitting device lighting device.

In addition, in the prior art, in the light emitting device package, research is being conducted on a method of reducing manufacturing cost and improving manufacturing yield through process efficiency improvement and structural change.

One of the technical problems of the embodiment is a light emitting device, a light emitting device package, a method for manufacturing the same, and a method of manufacturing the same, which can solve the problem of deterioration of optical or electrical characteristics due to deterioration of optical or electrical characteristics caused by peeling between the reflective layer and the ohmic contact layer. It is intended to provide a light source device including

In addition, one of the technical problems of the embodiment is to provide a light emitting device, a light emitting device package, a manufacturing method thereof, and a light source device including the same that can solve the problem of electrical reliability deterioration due to the occurrence of peeling between the ohmic contact layer and the protective layer. do.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package capable of improving the bonding strength between a package body and a light emitting device, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package that can solve the problem of electrical and physical reliability in the bonding area between the electrode of the package body and the light emitting device electrode, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield through process efficiency improvement and structural change, a manufacturing method thereof, and a light source device including the same.

The technical problems of the embodiments are not limited to those described in this section, but include those that can be grasped through the description of the invention.

A light emitting device according to an embodiment includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; first and second reflective layers disposed on the light emitting structure; a first insulating layer disposed on the first and second reflective layers; a first bonding part electrically connected to the first conductivity type semiconductor layer; and a second bonding part electrically connected to the second conductivity-type semiconductor layer. The first reflective layer may be disposed between the light emitting structure and the first bonding part, and the second reflective layer may be disposed between the light emitting structure and the second bonding part. The first reflective layer and the second reflective layer may be spaced apart from each other. The first and second reflective layers may be made of the same material. The first insulating layer may be disposed while surrounding the first and second reflective layers.

The first insulating layer may include a protective layer disposed around the first bonding portion and the second bonding portion.

The first conductivity type semiconductor layer 111, the second conductivity type semiconductor layer 113, and the active layer 112 disposed between the first conductivity type semiconductor layer 111 and the second conductivity type semiconductor layer 113 A light emitting structure 110 comprising; a first electrode 141 disposed on the first conductivity-type semiconductor layer 111 and electrically connected to the first conductivity-type semiconductor layer 111; a second electrode 142 disposed on the second conductivity type semiconductor layer 113 and electrically connected to the second conductivity type semiconductor layer 113; a first bonding pad 171 disposed on the first electrode 141 and the second electrode 142 and electrically connected to the first electrode 141; A second bonding pad 172 disposed on the first electrode 141 and the second electrode 142, spaced apart from the first bonding pad 171, and electrically connected to the second electrode 142. ); an ohmic contact layer 130 disposed on an upper surface of the light emitting structure 110; a first reflective layer 161 disposed between the ohmic contact layer 130 and the first bonding pad 171; a second reflective layer 162 disposed between the ohmic contact layer 130 and the second bonding pad 172; a third reflective layer 163 spaced apart from the first reflective layer 161 and the second reflective layer 162; and a protective layer 150 disposed between the first reflective layer 161 and the third reflective layer 163 and between the second reflective layer 162 and the third reflective layer 163. .

A light emitting device package according to an embodiment may include the light emitting device.

According to the embodiment, a light emitting device capable of improving light output by improving optical and electrical characteristics by suppressing a peeling phenomenon between a reflective layer and an ohmic contact layer by blocking or dispersing the transmission of stress generated in the pad region to the ohmic contact layer , a light emitting device package, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, a light emitting device, a light emitting device package, a manufacturing method thereof, and a light source device including the same, in which electrical reliability is improved by fundamentally blocking the peeling phenomenon between the ohmic contact layer and the passivation by separating the ohmic contact layer and the passivation layer can provide

In addition, according to the embodiment, it is possible to provide a light emitting device package having excellent electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device, a manufacturing method thereof, and a light source device including the same. For example, according to the light emitting device package and the light emitting device manufacturing method according to the embodiment, re-melting in the bonding area of the light emitting device package is prevented from occurring in the process of re-bonding the light emitting device package to a substrate or the like. There are technical effects that can be done.

Further, according to embodiments, a light emitting device package capable of improving bonding strength between a package body and a light emitting device, a manufacturing method thereof, and a light source device including the same may be provided.

In addition, according to the embodiment, it is possible to provide a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield through process efficiency improvement and structural change, a manufacturing method thereof, and a light source device including the same.

The technical effects of the embodiments are not limited to those described in this section, but include those that can be grasped through the description of the invention.

1 is a plan view of a light emitting device package according to an embodiment;
2 is a cross-sectional view of a light emitting device package according to an embodiment.
3 is a cross-sectional view of a light emitting device according to an embodiment.
4 is a plan view of a light emitting device according to an embodiment.
5A to 5G are planar layouts for each layer of a light emitting device according to an embodiment.
6 is an exemplary view of a pad in a light emitting device according to an embodiment.
7 is a cross-sectional view of a light emitting device according to a second embodiment.
8 is a plan view of a light emitting device according to a second embodiment.
9A to 9G are planar layouts for each layer of a light emitting device according to a second embodiment.

Hereinafter, a concretely realizable embodiment for solving the above problems will be described with reference to the accompanying drawings.

In the description of the embodiment, in the case where it is described as being formed on "on or under" of each element, the upper (upper) or lower (on or under) It includes both elements formed by directly contacting each other or by indirectly placing one or more other elements between the two elements. In addition, when expressed as "on or under", it may include the meaning of not only the upward direction but also the downward direction based on one element.

The semiconductor device may include various electronic devices such as a light emitting device and a light receiving device, and both the light emitting device and the light receiving device may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. A semiconductor device according to this embodiment may be a light emitting device. The light emitting device emits light by recombination of electrons and holes, and the wavelength of this light is determined by the energy band gap inherent in the material. Thus, emitted light may vary depending on the composition of the material.

1 is a plan view of a light emitting device package 200 according to an embodiment.

The light emitting device package 200 according to the embodiment may include a package body 210 and the light emitting device 100 . The package body 210 may include a body 213 and a first frame 211 and a second frame 212 disposed on the body 213 .

Next, FIG. 2 is a cross-sectional view taken along line D-D of the light emitting device package 200 according to the embodiment shown in FIG. 1, and according to the light emitting device package 200 according to the embodiment, the light emitting device 100 includes a package body. (210).

After the light emitting device 100 according to the embodiment is described in detail with reference to FIGS. 3 and 4 , the light emitting device package 200 will be described later.

(light emitting element)

3 is a cross-sectional view of the light emitting device 100 according to the embodiment, and FIG. 4 is a plan view of the light emitting device according to the embodiment. FIG. 3 is a cross-sectional view taken along line A1-A2 of FIG. 4 .

5A to 5G are planar layouts for each layer of a light emitting device according to an embodiment.

Hereinafter, technical features of the light emitting device 100 according to the embodiment will be described in detail with reference to FIGS. 3, 4, and 5A to 5G.

First, referring to FIG. 3 , the light emitting device 100 according to the embodiment includes a light emitting structure 110, a first electrode 141, a second electrode 142, a first bonding pad 171, and a second bonding pad ( 172), the ohmic contact layer 130, the first reflective layer 161, the second reflective layer 162, the third reflective layer 163, and the protective layer 150.

For example, the light emitting device 100 according to the embodiment includes a first conductivity type semiconductor layer 111, a second conductivity type semiconductor layer 113, the first conductivity type semiconductor layer 111 and the second conductivity type. A light emitting structure 110 including an active layer 112 disposed between semiconductor layers 113 and disposed on the first conductivity type semiconductor layer 111, electrically connected to the first conductivity type semiconductor layer 111 a first electrode 141 connected to the second electrode 142 disposed on the second conductivity type semiconductor layer 113 and electrically connected to the second conductivity type semiconductor layer 113; A first bonding pad 171 disposed on the electrode 141 and the second electrode 142 and electrically connected to the first electrode 141, and the first electrode 141 and the second electrode 142 ), a second bonding pad 172 disposed above, spaced apart from the first bonding pad 171, and electrically connected to the second electrode 142, and disposed on the upper surface of the light emitting structure 110 ohmic contact layer 130, a first reflective layer 161 disposed between the ohmic contact layer 130 and the first bonding pad 171, and the ohmic contact layer 130 and the second bonding pad (172), a second reflective layer 162 disposed between the first reflective layer 161 and the second reflective layer 162, and a third reflective layer 163 disposed spaced apart from each other, and the first reflective layer 161 and a protective layer 150 disposed between the third reflective layer 163 and between the second reflective layer 162 and the third reflective layer 163 .

<Substrate, light emitting structure>

First, as shown in FIG. 4 , the embodiment may include the light emitting structure 110 disposed on the substrate 105 .

The substrate 105 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 105 may be provided as PSS (Patterned Sapphire Substrate) having a concavo-convex pattern formed on an upper surface thereof.

The light emitting structure 110 may include a first conductivity type semiconductor layer 111 , an active layer 112 , and a second conductivity type semiconductor layer 113 . The active layer 112 may be disposed between the first conductivity type semiconductor layer 111 and the second conductivity type semiconductor layer 113 . For example, the active layer 112 may be disposed on the first conductivity-type semiconductor layer 111 and the second conductivity-type semiconductor layer 113 may be disposed on the active layer 112 .

According to the embodiment, the first conductivity type semiconductor layer 111 may be provided as an n-type semiconductor layer, and the second conductivity type semiconductor layer 113 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity type semiconductor layer 111 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 113 may be provided as an n-type semiconductor layer.

Hereinafter, for convenience of explanation, a case in which the first conductivity type semiconductor layer 111 is provided as an n-type semiconductor layer and the second conductivity type semiconductor layer 113 is provided as a p-type semiconductor layer will be described. .

In addition, in the above description, the case where the first conductivity-type semiconductor layer 111 is placed in contact with the substrate 105 has been described. However, a buffer layer may be further disposed between the first conductivity type semiconductor layer 111 and the substrate 105 . For example, the buffer layer may provide a function of reducing a lattice constant difference between the substrate 105 and the light emitting structure 110 and improving crystallinity.

The light emitting structure 110 may be provided as a compound semiconductor. The light emitting structure 110 may be provided as, for example, a Group 2-6 or Group 3-5 compound semiconductor. For example, the light emitting structure 110 includes at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be.

The first conductivity-type semiconductor layer 111 may be provided as, for example, a Group 2-6 compound semiconductor or a Group 3-5 compound semiconductor. For example, the first conductivity-type semiconductor layer 111 is a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) material or a semiconductor material having a composition formula of (Al _x Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1). For example, the first conductivity type semiconductor layer 111 may be selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like. And, an n-type dopant selected from a group including Si, Ge, Sn, Se, Te, and the like may be doped.

The active layer 112 may be provided with, for example, a Group 2-6 compound semiconductor or a Group 3-5 compound semiconductor. For example, the active layer 112 is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) or (Al _x It may be provided as a semiconductor material having a composition formula of Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1). As an example, the active layer 112 may be selected from the group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like. For example, the active layer 112 may be provided in a multi-well structure and may include a plurality of barrier layers and a plurality of well layers.

The second conductivity type semiconductor layer 113 may be provided as, for example, a Group 2-6 compound semiconductor or a Group 3-5 compound semiconductor. For example, the second conductivity type semiconductor layer 113 is a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) material or a semiconductor material having a composition formula of (Al _x Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1). For example, the second conductive semiconductor layer 113 may be selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like. In addition, a p-type dopant selected from a group including Mg, Zn, Ca, Sr, Ba, and the like may be doped.

<Current diffusion layer, ohmic contact layer, first reflective layer, second reflective layer, third reflective layer>

Next, as shown in FIG. 3 , the light emitting device 100 according to the embodiment may include a current diffusion layer 120 .

The current spreading layer 120 can increase light output by improving current spreading. For example, the current spreading layer 120 may be made of oxide or nitride. The current spreading layer 120 may prevent current from being concentrated under the second electrode 142 .

5A is a conceptual diagram for disposing the current spreading layer 120, and then the current spreading layer 120 may be disposed to correspond to the lower side of the region where the second electrode 142 is disposed. For example, in the cross section of FIG. 5A, the current spreading layer 120 may correspond to the current spreading layer 120 shown in FIG. 3, and may be disposed at a position overlapping the second electrode 142 vertically.

The rest of the current spreading layers 120 shown in FIG. 5A may also be disposed at positions overlapping the second electrode 142 (refer to FIG. 5D) disposed thereafter vertically.

Next, the light emitting device 100 according to the embodiment may include an ohmic contact layer 130 as shown in FIG. 3 . The ohmic contact layer 130 may increase light output by improving current diffusion.

For example, the ohmic contact layer 130 may include at least one selected from a group including a metal, a metal oxide, and a metal nitride. The ohmic contact layer 130 may include a light-transmitting material.

The ohmic contact layer 130 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), or IGZO ( indium gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx,RuOx/ITO,Ni/IrOx/Au, Ni /IrOx/Au/ITO, Pt, Ni, Au, Rh, may include at least one selected from the group including Pd.

5B is a conceptual diagram for disposing the ohmic contact layer 130, which can contribute to current diffusion by being entirely disposed on the light emitting structure 110. For example, the ohmic contact layer 130 in the cross section along the line A1-A2 in FIG. 4 may be disposed on the second conductivity type semiconductor layer 113 as shown in FIG. 3 to contribute to current diffusion.

As shown in FIG. 3, the area of the ohmic contact layer 130 is shown to be smaller than the area of the upper surface of the second conductivity type semiconductor layer 113, but is not limited thereto, and the area of the ohmic contact layer 130 and the area of the ohmic contact layer 130 The top surface of the second conductivity type semiconductor layer 113 may have the same area.

Therefore, since the process of disposing the ohmic contact layer 130 and the process of forming the upper surface of the second conductivity-type semiconductor layer 113 can be configured through one process, the process time can be shortened, and the ohmic contact layer 130 can be shortened. Since the area of the contact layer 130 can be disposed as large as possible, electrical characteristics of the light emitting device can be improved.

On the other hand, as shown in FIGS. 5B and 3, the ohmic contact layer 130 is provided with a first through hole R1 at a position corresponding to the position where the first electrode 141 (see FIG. 5D) is disposed. , and then the first electrode 141 may be electrically connected to the first conductive semiconductor layer 111 through the first through hole R1.

One of the technical problems of the embodiment is a light emitting device, a light emitting device package, a manufacturing method thereof, and a light source including the same that can solve the problem of electrical and optical reliability deterioration due to peeling between the ohmic contact layer and the protective layer 150. device is provided.

In the embodiment, since the protective layer 150 having a passivation function is disposed apart from the ohmic contact layer 130, there is a technical effect of suppressing the peeling phenomenon between the ohmic contact layer and the protective layer itself.

In the embodiment, the protective layer 150 and the ohmic contact layer 130 are arranged to be spaced apart from each other, and the reflective layer 161 is composed of a plurality of reflective layers 161, 162, and 163 spaced apart from each other, thereby forming the protective layer 150. It is possible to improve the peeling phenomenon between the ohmic contact layer 130.

For example, in the embodiment, the first reflective layer 161 is disposed between the protective layer 150 and the ohmic contact layer 130, and the second reflective layer 162 is disposed between the protective layer 150 and the ohmic contact layer 130. By disposing between the contact layers 130 , the protective layer 150 may be spaced apart from the ohmic contact layer 130 . In addition, since the bonding reliability between the protective layer and the reflective layer 160 is superior to that of the protective layer 150 and the ohmic contact layer 130, the protective layer 150 is spaced apart from the ohmic contact layer 130 and Reliability can be improved by contacting the first reflective layer 161 and the second reflective layer 162 .

Accordingly, according to the embodiment, a light emitting device, a light emitting device package, a manufacturing method thereof, and a light source device including the same, in which electrical reliability is improved by fundamentally blocking the peeling phenomenon between the ohmic contact layer and the passivation by separating the ohmic contact layer and the passivation layer. can provide.

Meanwhile, referring to FIG. 5B , in an embodiment, the ohmic contact layer 130 may include a predetermined additional through hole in a region S corresponding to the separation region of the reflective layer 160 (see FIG. 5C ) to be disposed thereafter. there is.

For example, the ohmic contact layer 130 may have second through-holes R2 in regions corresponding to the first isolation region 160S1 and the second isolation region 160S2 of the reflective layer 160 to be disposed thereafter. there is. In addition, a fifth through hole R5 may be included on both sides of the second through hole R2.

In the embodiment, the second through hole R2 functions as a contact hole, and the fifth through hole R5 does not function as a contact hole, and the reflective layer 160 may be disposed thereon.

On the other hand, one of the technical problems of the embodiment is a light emitting device, a light emitting device package, and a method of manufacturing the same, which can solve the problem of deterioration of light output due to deterioration of optical characteristics or electrical characteristics caused by peeling between the reflective layer and the ohmic contact layer. And to provide a light source device including this.

According to the embodiment, the reflective layer 160 can directly contact the light emitting structure 110 through the fifth through hole R5, and through this, the reflective layer 160 is also in contact with the light emitting structure 110, thereby improving contact force and reliability can make it

For example, in the embodiment, bottom surfaces of the first reflective layer 161 and the second reflective layer 162 are disposed lower than the active layer 112 of the light emitting structure 110, so that the first conductivity type semiconductor layer 111 ) can be encountered.

In particular, according to the embodiment, the reflective layer 160 makes contact with the light emitting structure 110 by utilizing a physical phenomenon in which the reflective layer 160 has excellent contact force with the light emitting structure 110, thereby suppressing the peeling phenomenon between the ohmic contact layer and the reflective layer. Reliability can be improved to improve luminous intensity.

Meanwhile, in the embodiment, the second through hole R2 functions as a contact hole, and may occupy an area smaller than that of the first through hole R1. Through this, the area of one first through hole R1 may be equal to or similar to the sum of the areas of one second through hole R2 and two fifth through holes R5.

Accordingly, according to the embodiment, since the removal area of the active layer 112 is equal to that of the conventional one according to the arrangement of the second through hole R2 and the fifth through hole R5, the reflective layer 160 and the reflective layer 160 have no problems with light output. Reliability can be greatly improved by significantly improving the bonding force between the light emitting structures 110 .

Next, the light emitting device 100 according to the embodiment may include a reflective layer 160 as shown in FIG. 3 . The reflective layer 160 may include a first reflective layer 161 , a second reflective layer 162 , and a third reflective layer 163 . The reflective layer 160 may be disposed on the ohmic contact layer 130 and reflect light emitted from the light emitting structure 110 to improve luminous intensity.

FIG. 5C is a conceptual diagram for disposing the reflective layer 160. For example, the reflective layer 160 in the cross section of FIG. 5C is on the light emitting structure 110 and the ohmic contact layer 130 as shown in FIG. It may correspond to the disposed reflective layer 160 .

Meanwhile, as shown in FIGS. 5C and 3 , the first reflective layer 161 includes the first opening H1 at a position corresponding to the position where the first electrode 141 (see FIG. 5D ) is disposed, Thereafter, the first electrode 141 may be electrically connected to the first conductive semiconductor layer 111 through the first opening H1.

In addition, as shown in FIGS. 5C and 3 , the second reflective layer 162 has a second opening H2 at a position corresponding to the position where the second electrode 142 (see FIG. 5D) is disposed, Then, the second electrode 142 may be electrically connected to the ohmic layer through the second opening H2. Meanwhile, as shown in FIG. 5C, the third reflective layer 163 may also include the third opening H3, but FIG. 3 is not shown.

The reflective layer 160 may be an insulating reflective layer 160 . For example, the reflective layer 160 may include a Distributed Bragg Reflector (DBR) or an Omni Directional Reflector (ODR), but is not limited thereto.

For example, the reflective layer 160 may be made of an insulating material, but a material having high reflectivity, for example, a DBR structure, may be used to reflect light emitted from the active layer 112 .

For example, the reflective layer 160 may form a DBR structure by repeatedly arranging at least two materials having different refractive indices several times to several tens of times. For example, the reflective layer 160 may be TiO ₂ and SiO ₂ or Ta ₂ O ₅ and SiO ₂ .

In addition, the reflective layer 160 may include an Omni Directional Reflector (ODR) layer, and the ODR layer of the reflective layer 160 may be implemented to have a lower refractive index than that of the light emitting structure 110, for example. there is. The ODR layer of the reflective layer 160 is selected to have a low refractive index having a large difference from the refractive index of the material constituting the light emitting structure 110, thereby providing a reflective function. The ODR layer of the reflective layer 160 may include oxide or nitride. For example, the ODR layer of the reflective layer 160 may include at least one material selected from materials such as SiO ₂ and SiNx.

In addition, some areas of the reflective layer 160 may include an insulating layer, while other areas may include a conductive layer. For example, the reflective layer 160 may be formed of a plurality of layers including an insulating layer and a conductive layer. For example, the reflective layer 160 may also include a dielectric layer, a polymer layer, a metal layer, or a semiconductor layer such as AlGaInP.

Accordingly, the reflective layer 160 is TiO ₂ , SiO ₂ , SiNx, MgO, ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony- Tin-Oxide), IZTO(Indium-Zinc-Tin-Oxide), IAZO(Indium-Aluminum-Zinc-Oxide), GZO(Gallium-Zinc-Oxide), IGZO(Indium-Gallium-Zinc-Oxide), IGTO(Indium -Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide), Ag, Ag ₂ O, Al, Ni, Ti, Zn, Rh, Mg, Pd, Ru, Pt, Ir, or at least one selected from alloys thereof. may contain one.

Accordingly, according to the embodiment, a light emitting device, a light emitting device package, and a lighting device including the light emitting device capable of improving luminous intensity Po by minimizing light absorption by reflecting light emitted from the active layer, which is a light emitting layer, in the reflective layer 160 can provide

In addition, according to the embodiment, since light absorption can be minimized, when the light emitting device is mounted in a flip chip type, light intensity can be remarkably improved as light emitting from six sides is possible based on the light emitting structure.

On the other hand, one of the technical problems of the embodiment is a light emitting device, a light emitting device package, and a method of manufacturing the same, which can solve the problem of deterioration of light output due to deterioration of optical characteristics or electrical characteristics caused by peeling between the reflective layer and the ohmic contact layer. And to provide a light source device including this.

The reflective layer 160 in the embodiment includes a third reflective layer 163 disposed to be spaced apart from the first reflective layer 161 and the second reflective layer 162, and a separation region 160S spaced apart from each other. can include

For example, referring to FIG. 5C , the separation region 160S may include a first separation region 160S1 positioned between the first reflective layer 161 and the third reflective layer 163 . In addition, the separation region 160S may include a second separation region 160S2 positioned between the second reflective layer 162 and the third reflective layer 163 .

In an embodiment, the first separation region 160S1 may be located around the first protective layer 150a, and the second separation region 160S2 may be located around the second protective layer 150b. can

5E is a schematic diagram of the protective layer 150, wherein the protective layer 150 is a third through-hole (R3) for electrically connecting the first electrode 141 and the first bonding pad 171 (see FIG. 5F). ) may be included. In addition, the protective layer 150 may include a fourth through-hole R4 through which the second electrode 142 and the second bonding pad 172 (see FIG. 5F ) are electrically connected.

Referring back to FIGS. 5C and 3 , in the embodiment, the protective layer 150 may be disposed between the first reflective layer 161 and the third reflective layer 163 . For example, the protective layer 150 may include a first protective layer 150a positioned on a first separation region 160S1 between the first reflective layer 161 and the third reflective layer 163. there is.

In addition, the protective layer 150 may be disposed between the second reflective layer 162 and the third reflective layer 163 . For example, the protective layer 150 may include a second protective layer 150b positioned on the second separation region 160S2 between the second reflective layer 162 and the third reflective layer 163. there is.

Through this, according to the embodiment, the reflective layer 160 is physically separated into the first reflective layer 161, the second reflective layer 162, and the third reflective layer 163, so that the stress generated in the bonding pad area is reduced to each reflective layer 160. ), a light emitting device and a light emitting device package capable of improving optical output by improving optical and electrical characteristics by suppressing peeling between the reflective layer and the ohmic contact layer by blocking or dispersing transmission to the ohmic contact layer as it is dispersed in ), a light emitting device package thereof It is possible to provide a manufacturing method and a light source device including the same.

In addition, the first protective layer 150a disposed between the first reflective layer 161 and the third reflective layer 163 causes the first reflective layer 161 to receive a stress equal to the tensile force applied to the first bonding pad 171 by the third reflective layer 161 . It may not be transmitted to the reflective layer 163, and the first protective layer 150a relieves physical stress by the space of the first separation region 160S1 between the first reflective layer 161 and the third reflective layer 163. can make it

Also, according to the embodiment, the second reflective layer 162 is subjected to the tensile force received by the second bonding pad 172 by the second protective layer 150b disposed between the second reflective layer 162 and the third reflective layer 163 and The same stress may not be transmitted to the third reflective layer 163, and the second protective layer 150b is formed by the space of the second separation region 160S2 between the second reflective layer 162 and the third reflective layer 163. This physical stress can be alleviated.

Referring to FIG. 3 , in the embodiment, the protective layer 150 may be disposed around the outer circumferences of the first reflective layer 161 and the second reflective layer 162 .

Through this, in the embodiment, the protective layer 150 having a passivation function is disposed apart from the ohmic contact layer 130 with the reflective layer 160 therebetween, thereby suppressing the peeling phenomenon between the ohmic contact layer and the protective layer itself. There are possible technical effects.

For example, in the embodiment, the first reflective layer 161 is disposed between the protective layer 150 and the first reflective layer 161, and the second reflective layer 162 is disposed between the protective layer 150 and the first reflective layer 161. The protective layer 150 may be spaced apart from the ohmic contact layer 130 by being disposed between the second reflective layers 162 . In addition, since the bonding reliability between the protective layer and the reflective layer 160 is superior to that of the protective layer 150 and the ohmic contact layer 130, the protective layer 150 is spaced apart from the ohmic contact layer 130 and Reliability can be improved by contacting the first reflective layer 161 and the second reflective layer 162 .

Accordingly, according to the embodiment, a light emitting device, a light emitting device package, a manufacturing method thereof, and a light source device including the same, in which electrical reliability is improved by fundamentally blocking the peeling phenomenon between the ohmic contact layer and the passivation by separating the ohmic contact layer and the passivation layer. can provide.

In addition, one of the technical problems of the embodiment is a light emitting device, a light emitting device package, a manufacturing method thereof, and It is intended to provide a light source device including this.

According to the embodiment, by disposing the bottom surface of the reflective layer 160 in contact with the light emitting structure 110 under the side surface of the ohmic contact layer 130, the reflective layer 160 also comes in contact with the light emitting structure 110, thereby improving contact force and reliability. can

For example, in the embodiment, the bottom surface 161e of the first reflective layer and the bottom surface of the second reflective layer 162 are disposed lower than the active layer 112 of the light emitting structure 110 to form the first conductivity type semiconductor layer. (111).

According to the embodiment, the reflective layer 160 is in contact with the light emitting structure 110 by utilizing a physical phenomenon in which the reflective layer 160 has excellent contact force with the light emitting structure 110, thereby suppressing the peeling phenomenon between the ohmic contact layer and the reflective layer, thereby reducing reliability. can improve the luminous intensity.

In addition, according to the embodiment, since the reflective layer 160 is disposed on the side surface of the light emitting structure 110 to block the leakage phenomenon, there is also a complex effect of improving electrical characteristics.

In addition, according to the embodiment, since the reflective layer 160 is disposed on the side surface of the light emitting structure 110, the light emitted from the active layer 112 by the reflective layer does not leak to the side surface and is reflected from the reflective layer, thereby greatly improving light reflection efficiency. There are multiple effects that can significantly improve luminosity.

<Electrode, protective layer, bonding pad>

Next, referring to FIG. 3 , the light emitting device 100 according to the embodiment may include a first electrode 141 and a second electrode 142 .

The first electrode 141 may be electrically connected to the first conductive semiconductor layer 111 within the first opening h1. The first electrode 141 may be disposed on the first conductivity type semiconductor layer 111 . For example, according to the light emitting device 100 according to the embodiment, the first electrode 141 penetrates the second conductivity type semiconductor layer 113 and the active layer 112 to form the first conductivity type semiconductor layer 111 ) may be disposed on the upper surface of the first conductivity type semiconductor layer 111 in a recess extending to a partial region of the region.

The first electrode 141 may be electrically connected to the upper surface of the first conductive semiconductor layer 111 through the second opening h1 provided in the first reflective layer 161 . The first opening h1 and the recess may vertically overlap each other.

A side surface of the first opening h1 and a side surface of the recess may have different inclination angles. An inclination angle formed between the side surface of the first opening h1 and the bottom surface of the recess may be different from an inclination angle formed between the side surface of the recess and the bottom surface of the recess. When the first reflective layer 161 is disposed in the recess, the side surface of the recess and the bottom surface of the recess are formed due to the step-coverage characteristic in the process for disposing the first reflective layer 161. An inclination angle formed by a side surface of the first opening h1 and a bottom surface of the recess may be different from each other.

Therefore, the horizontal width of the first reflective layer 161 disposed under the recess may be different from the horizontal width of the first reflective layer 161 disposed above the recess. As the horizontal width of the first reflective layer 161 disposed under the recess and the horizontal width of the first reflective layer 161 disposed above the recess are different from each other, the electrical reliability of the semiconductor device is improved. And, optical characteristics by the first reflective layer 161 can be improved.

Also, the second electrode 142 may be electrically connected to the second conductivity type semiconductor layer 113 . The second electrode 142 may be disposed on the second conductivity type semiconductor layer 113 . According to the embodiment, the ohmic contact layer 130 may be disposed between the second electrode 142 and the second conductivity type semiconductor layer 113 .

The second electrode 142 may be electrically connected to the second conductive semiconductor layer 113 through the second opening h2 provided in the second reflective layer 162 . For example, as shown in FIG. 3 , the second electrode 142 may be electrically connected to the second conductivity type semiconductor layer 113 through the ohmic contact layer 130 .

According to the embodiment, as shown in FIG. 5D , the first electrode 141 and the second electrode 142 may have polarities and may be spaced apart from each other.

For example, the first electrode 141 may be provided in a plurality of line shapes. In addition, the second electrode 142 may be provided in a plurality of line shapes, for example. The first electrode 141 may be disposed between a plurality of adjacent second electrodes 142 . The second electrode 142 may be disposed between a plurality of adjacent first electrodes 141 .

When the first electrode 141 and the second electrode 142 have different polarities, they may have different numbers of electrodes. For example, when the first electrode 141 is composed of an n electrode and the second electrode 142 is composed of a p electrode, the number of second electrodes 142 may be greater than that of the first electrode 141. there is. When the second conductivity type semiconductor layer 113 and the first conductivity type semiconductor layer 111 have different electrical conductivity and/or resistance, the first electrode 141 and the second electrode 142 Electrons and holes injected into the light emitting structure 110 may be balanced, and thus optical characteristics of the semiconductor device may be improved.

The first electrode 141 and the second electrode 142 may be formed in a single-layer or multi-layer structure. For example, the first electrode 141 and the second electrode 142 may be ohmic electrodes. For example, the first electrode 141 and the second electrode 142 may be ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or at least one or an alloy of two or more of these materials.

The light emitting device 100 according to the embodiment may include a protective layer 150 as shown in FIGS. 3 and 5E .

The protective layer 150 may include a plurality of third recesses R3 exposing the first electrode 141 . In addition, the protective layer 150 may include a plurality of fourth recesses R4 exposing the second electrode 142 .

Referring to FIG. 3 , the protective layer 150 may be disposed on the reflective layer 160 . The protective layer 150 may be disposed on the first reflective layer 161 , the second reflective layer 162 , and the third reflective layer 163 .

For example, the protective layer 150 may be provided with an insulating material. For example, the protective layer 150 is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group including Si _x N _y and Al _x O _y .

According to the embodiment, since the reflective layer 160 surrounds the light emitting structure 110, the fixing force is improved, and the protective layer 150 wraps the reflective layer 160, so the fixing force is remarkably improved, thereby improving reliability. For example, since the lower surface 150e of the protective layer is disposed in a structure that wraps down to the side surface of the reflective layer 160, the fixing force is remarkably improved, and reliability can be improved.

In addition, since the reflective layer 160 disposed on the outside of the upper surface of the first conductivity type semiconductor layer 111 of the light emitting device is also disposed in a structure in which the protective layer 150 is wrapped, the fixing force is remarkably improved, thereby improving reliability.

Next, as shown in FIGS. 3 and 5F , the light emitting device 100 according to the embodiment includes first bonding pads 171 and second bonding pads 172 disposed on the protective layer 150. can include

Through this, as shown in FIGS. 4 and 5G , the light emitting device according to the embodiment may be completed.

The first bonding pad 171 may be disposed on the first reflective layer 161 . Also, the second bonding pad 172 may be disposed on the second reflective layer 162 . The second bonding pad 172 may be spaced apart from the first bonding pad 171 .

The first bonding pad 171 may contact the upper surface of the first electrode 141 through the plurality of third recesses R3 provided in the protective layer 150 .

Also, the second bonding pad 172 may contact the upper surface of the second electrode 142 through the plurality of fourth recesses R4 provided in the protective layer 150 .

In addition, according to the light emitting device 100 according to the embodiment, as shown in FIG. 3, the first reflective layer 161 is disposed under the first electrode 141, and the second reflective layer 162 is It is disposed below the second electrode 142 . Accordingly, the first reflective layer 161 and the second reflective layer 162 reflect the light emitted from the active layer 112 of the light emitting structure 110 so that the first electrode 141 and the second electrode 142 It is possible to improve the luminous intensity Po by minimizing the occurrence of light absorption.

For example, the first reflective layer 161 and the second reflective layer 162 are made of an insulating material, and a material having high reflectivity, for example, a DBR structure, is used to reflect light emitted from the active layer 114. can be achieved

The first reflective layer 161 and the second reflective layer 162 may form a DBR structure in which materials having different refractive indices are repeatedly disposed. For example, the first reflective layer 161 and the second reflective layer 162 may have a single-layer or stacked structure including at least one of TiO ₂ , SiO ₂ , Ta ₂ O ₅ , and HfO ₂ .

In addition, according to another embodiment, without being limited thereto, the first reflective layer 161 and the second reflective layer 162 emit light from the active layer 112 according to the wavelength of light emitted from the active layer 112. It can be freely selected so as to adjust the reflectivity to light.

Also, according to another embodiment, the first reflective layer 161 and the second reflective layer 162 may be provided as ODR layers as described above. According to another embodiment, the first reflective layer 161 and the second reflective layer 162 may be provided in a kind of hybrid form in which a DBR layer and an ODR layer are stacked.

A semiconductor device according to an embodiment may be connected to an external power source using a flip chip bonding method. For example, in manufacturing a semiconductor device package, the upper surface of the first bonding pad 171 and the upper surface of the second bonding pad 172 may be disposed such that they are attached to a sub-mount, a lead frame, or a circuit board. there is.

For example, since the first bonding pad 171 and the second bonding pad 172 are formed of Au, AuTi, etc., a mounting plant can be stably performed. In addition, the first bonding pad 171 and the second bonding pad 172 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, etc. can be formed

When the semiconductor device according to the embodiment is mounted in a flip chip bonding method and implemented as a semiconductor device package, light provided from the light emitting structure 110 may be emitted through the substrate 105 . Light emitted from the light emitting structure 110 may be reflected by the first reflective layer 161 and the second reflective layer 162 and emitted toward the substrate 105 .

In addition, light emitted from the light emitting structure 110 may also be emitted in a lateral direction of the light emitting structure 110 . In addition, light emitted from the light emitting structure 110 is bonded to the first bonding pad 171 and the second bonding pad 171 and the second bonding pad 171 among the surfaces on which the second bonding pad 172 is disposed. The pad 172 may be emitted to the outside through an area not provided.

Specifically, the light emitted from the light emitting structure 110 is emitted from the first reflective layer 161 and the second reflective layer among the surfaces on which the first bonding pad 171 and the second bonding pad 172 are disposed. 162, the third reflective layer 163 may be emitted to the outside through an area not provided.

Accordingly, the light emitting device 100 according to the embodiment can emit light in six directions surrounding the light emitting structure 110, and can significantly improve the luminous intensity.

In addition, according to the semiconductor device and the semiconductor device package according to the embodiment, the first bonding pad 171 and the second bonding pad 172 having a large area can be directly bonded to a circuit board providing power, so that the flip The chip bonding process can be performed easily and stably.

<Segmented or separated bonding pad>

6 is an exemplary plane view of a pad in a light emitting device according to an embodiment.

According to the embodiment, the first bonding pad 171 or the second bonding pad 172 may be separated or divided.

For example, referring to FIG. 6 , the first bonding pad 171 includes a first bonding area 171a, a second bonding area 171b, a third bonding area 171c, and a fourth bonding area 171d. ) may be included. Also, the first bonding pad 171 may include a first connection area 171e electrically connecting the first bonding area 171a to the fourth bonding area 171d.

Also, the second bonding pad 172 may include a first bonding area 172a, a second bonding area 172b, a third bonding area 172c, and a fourth bonding area 172d. Also, the second bonding pad 172 may include a second connection area 172e electrically connecting the first bonding area 172a to the fourth bonding area 172d.

The embodiment may include a spaced area between bonding areas in the first bonding pad 171 . For example, the first bonding pad 171 may include a first separation area 171S1 between the first bonding area 171a and the second bonding area 171b, and the second bonding area 171b. ) and the fourth bonding area 171d, a second separation area 171S2 may be included.

Also, the embodiment may include a spaced area between bonding areas in the second bonding pad 172 . For example, the second bonding pad 172 may include a third separation area 172S3 between the first bonding area 172a and the second bonding area 172b, and the second bonding area 172b ) and the fourth bonding area 172d, a fourth separation area 172S4 may be included.

According to the embodiment, the bonding pad is separated or divided into a plurality of parts, and a spaced area is provided between the divided bonding areas, so that when the bonding pad is die bonded to the lead frame of the package body, the area to be bonded is optimized by optimizing the light emitting device. In the reflow process of the package, by minimizing and distributing stress caused by remelting in the lead frame and bonding area, by minimizing and distributing stress in the reflective layer such as DBR adjacent to the bonding pad, the reflective layer and ohmic There is a technical effect that can minimize peeling between contact layers.

Through this, according to the embodiment, by blocking or dispersing the transmission of stress generated in the bonding pad area to the ohmic contact layer, it is possible to suppress the peeling phenomenon between the reflective layer and the ohmic contact layer, thereby improving optical and electrical characteristics, thereby improving light output. It is possible to provide a light emitting device, a light emitting device package, a manufacturing method thereof, and a light source device including the same.

In the embodiment, the distance T1 of the first separation region 171S1 is controlled within a range of about 3% to 12% of the length of the horizontal axis or the vertical axis of the first bonding pad 171, so stress generated in the bonding pad region Light output can be improved by suppressing the peeling phenomenon by blocking or dispersing the optical and electrical properties. For example, when the horizontal axis of the first bonding pad 171 is about 340 μm to about 640 μm, the first separation distance T1 may be controlled in the range of about 20 μm to about 40 μm, but is not limited thereto. .

When the first separation distance T1 is less than the lower limit, the effect of blocking or dispersing stress may be low, and when the first separation distance T1 exceeds the upper limit, there may be an issue of performance deterioration in a die shear test (DST).

In the embodiment, the distance T2 of the second separation region 171S2 is controlled within a range of about 3% to 12% of the length of the horizontal axis or the vertical axis of the first bonding pad 171, so stress generated in the bonding pad region Light output can be improved by suppressing the peeling phenomenon by blocking or dispersing the optical and electrical properties. For example, when the horizontal axis of the first bonding pad 171 is about 340 μm to about 640 μm, the second separation distance T2 may be controlled in the range of about 20 μm to about 40 μm, but is not limited thereto. .

In an embodiment, the first bonding pad 171 may include a first connection area 171e electrically connecting the first bonding area 171a to the fourth bonding area 171d. Electrical reliability is improved by being electrically connected through 171e, and reliability can be excellent even in various electrical probing tests.

In addition, the second bonding pad 172 includes a second connection area 172e electrically connecting the first bonding area 172a to the fourth bonding area 172d so that electrical reliability is improved, Reliability may be excellent even in various electrical probing tests.

(light emitting device package)

Technical characteristics of the light emitting device package 200 according to the embodiment will be described again with reference to FIG. 3 .

As shown in FIG. 3 , the light emitting device package 200 according to the embodiment may include a package body 210 and a light emitting device 100 .

The package body 210 may include a first frame 211 and a second frame 212 . The first frame 211 and the second frame 212 may be spaced apart from each other.

The package body 210 may include a body 213. The body 213 may be disposed between the first frame 211 and the second frame 212 . The body 213 may perform a function of a kind of electrode separation line. The body 213 may also be referred to as an insulating member.

The body 213 may be disposed on the first frame 211 . Also, the body 213 may be disposed on the second frame 212 .

The body 213 may provide an inclined surface disposed on the first frame 211 and the second frame 212 . A cavity C may be provided on the first frame 211 and the second frame 212 by the inclined surface of the body 213 .

According to the embodiment, the package body 210 may be provided in a structure with a cavity (C), or may be provided in a structure with a flat top surface without a cavity (C).

For example, the body 213 may include polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy molding compound (EMC), It may be formed of at least one selected from a group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. In addition, the body 213 may include a high refractive index filler such as TiO ₂ and SiO ₂ .

The first frame 211 and the second frame 212 may be provided as conductive frames. The first frame 211 and the second frame 212 may stably provide structural strength of the package body 210 and may be electrically connected to the light emitting device 100 .

According to the embodiment, the light emitting device 100 may include a first bonding pad 171 , a second bonding pad 172 , a light emitting structure 110 , and a substrate 105 as described above.

The light emitting device 100 may be disposed on the package body 210 . The light emitting device 100 may be disposed on the first frame 211 and the second frame 212 . The light emitting device 100 may be disposed in the cavity C provided by the package body 210 .

The first bonding pad 171 may be disposed on a lower surface of the light emitting device 100 . The second bonding pad 172 may be disposed on a lower surface of the light emitting device 100 . The first bonding pad 171 and the second bonding pad 172 may be spaced apart from each other on the lower surface of the light emitting device 100 .

The first bonding pad 171 may be disposed on the first frame 211 . The second bonding pad 172 may be disposed on the second frame 212 .

The first bonding pad 171 may be disposed between the light emitting structure 110 and the first frame 211 . The second bonding pad 172 may be disposed between the light emitting structure 110 and the second frame 212 .

Meanwhile, as shown in FIG. 3 , the light emitting device package 200 according to the embodiment may include a first opening TH1 and a second opening TH2. The first frame 211 may include the first opening TH1. The second frame 212 may include the second opening TH2.

The first opening TH1 may be provided in the first frame 211 . The first opening TH1 may be provided through the first frame 211 . The first opening TH1 may pass through the top and bottom surfaces of the first frame 211 in a first direction.

The first opening TH1 may be disposed under the first bonding pad 171 of the light emitting device 100 . The first opening TH1 may overlap with the first bonding pad 171 of the light emitting device 100 . The first opening TH1 may overlap with the first bonding pad 171 of the light emitting device 100 in a first direction from the upper surface to the lower surface of the first frame 211 . The first bonding pad 171 may be disposed on the first opening TH1.

The second opening TH2 may be provided in the second frame 212 . The second opening TH2 may be provided through the second frame 212 . The second opening TH2 may be provided to pass through the upper and lower surfaces of the second frame 212 in a first direction.

The second opening TH2 may be disposed below the second bonding pad 172 of the light emitting device 100 . The second opening TH2 may overlap the second bonding pad 172 of the light emitting device 100 . The second opening TH2 may overlap the second bonding pad 172 of the light emitting device 100 in a first direction from the upper surface to the lower surface of the second frame 212 . The second bonding pad 172 may be disposed on the second opening TH2.

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be spaced apart from each other under the lower surface of the light emitting device 100 .

According to the embodiment, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width of the first bonding pad 171 . Also, a width of an upper region of the second opening TH2 may be smaller than or equal to a width of the second bonding pad 172 .

Accordingly, the first bonding pad 171 of the light emitting device 100 and the first frame 211 may be more firmly attached. In addition, the second bonding pad 172 of the light emitting device 100 and the second frame 212 may be more firmly attached.

Also, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W2 of the lower region of the first opening TH1. Also, a width of an upper region of the second opening TH2 may be smaller than or equal to a width of a lower region of the second opening TH2.

The first opening TH1 may include an upper area disposed adjacent to the upper surface of the first frame 211 and a lower area disposed adjacent to the lower surface of the first frame 211 . For example, the circumference of the upper region of the first opening TH1 may be smaller than the circumference of the lower region of the first opening TH1.

The first opening TH1 includes a first point having the smallest circumference in the first direction, and the first point is larger than a lower area of the first opening TH1 based on a direction perpendicular to the first direction. It may be disposed closer to an upper region of the first opening TH1.

In addition, the second opening TH2 may include an upper area disposed adjacent to the upper surface of the second frame 212 and a lower area disposed adjacent to the lower surface of the second frame 212 . For example, the circumference of the upper region of the second opening TH2 may be smaller than the circumference of the lower region of the second opening TH2.

The second opening TH2 includes a first point having the smallest circumference in the first direction, and the first point is larger than a lower area of the second opening TH2 based on a direction perpendicular to the first direction. It may be disposed closer to an upper region of the second opening TH2.

As etching proceeds in the direction of the upper and lower surfaces of the first and second lead frames 211 and 112, respectively, the first and second openings TH1 and TH2 may be provided in a snowman shape. .

The widths of the first and second openings TH1 and TH2 may gradually increase from the lower area to the middle area and then decrease again. In addition, the width may be gradually increased and then decreased again while going from the middle region where the width is reduced to the upper region again.

The first point of the first and second openings TH1 and TH2 described above may refer to a boundary area where the size of the opening decreases from the lower area to the upper area and then increases again in the snowman shape.

The first and second openings TH1 and TH2 include a first region disposed on the upper surface of each of the first and second frames 211 and 212 and a lower surface of each of the first and second frames 211 and 212. It may include a second region disposed on. A width of an upper surface of the first region may be smaller than a width of a lower surface of the second region.

In addition, the first and second frames 211 and 212 may include a support member and first and second metal layers 211a and 212a surrounding the support member.

According to the embodiment, after the etching process for forming the first and second openings TH1 and TH2 is completed, a plating process for the support member constituting the first and second frames 211 and 212 is performed. Through this, the first and second metal layers 211a and 212a may be formed. Accordingly, the first and second metal layers 211a and 212a may be formed on the surface of the support member constituting the first and second frames 211 and 212 .

The first and second metal layers 211a and 212a may be provided on upper and lower surfaces of the first and second frames 211 and 212 . In addition, the first and second metal layers 211a and 212a may be provided in boundary regions contacting the first and second openings TH1 and TH2.

Meanwhile, the first and second metal layers 211a and 212a provided in the boundary regions contacting the first and second openings TH1 and TH2 are provided in the first and second openings TH1 and TH2. And it may be combined with the second conductive layers 321 and 322 to form the first and second alloy layers 211b and 212b. Formation of the first and second alloy layers 211b and 212b will be further described later.

For example, the first and second frames 211 and 212 may be provided with a Cu layer as a basic support member. In addition, the first and second metal layers 211a and 212a may include at least one of a Ni layer and an Ag layer.

When the first and second metal layers 211a and 212a include a Ni layer, since the Ni layer has a small change in thermal expansion, even when the size or placement position of the package body changes due to thermal expansion, The position of the light emitting element disposed on the upper part can be stably fixed by the Ni layer. When the first and second metal layers 211a and 212a include an Ag layer, the Ag layer can efficiently reflect light emitted from a light emitting device disposed thereon and improve luminous intensity.

According to the embodiment, when the size of the first and second bonding pads 171 and 172 of the light emitting device 100 is reduced to improve the light extraction efficiency, the upper region of the first opening TH1 A width may be greater than or equal to that of the first bonding pad 171 . Also, the width of the upper region of the second opening TH2 may be greater than or equal to the width of the second bonding pad 172 .

Also, a width of an upper region of the first opening TH1 may be smaller than or equal to a width of a lower region of the first opening TH1. Also, a width of an upper region of the second opening TH2 may be smaller than or equal to a width of a lower region of the second opening TH2.

For example, the upper region of the first opening TH1 may have a width of several tens of micrometers to several hundreds of micrometers. Also, the width of the lower region of the first opening TH1 may be greater than the width of the upper region of the first opening TH1 by several tens of micrometers to hundreds of micrometers.

Also, the width of the upper region of the second opening TH2 may be tens of micrometers to hundreds of micrometers. Also, the width of the lower region of the second opening TH2 may be greater than the width of the upper region of the second opening TH2 by several tens of micrometers to hundreds of micrometers.

A width W3 between the first opening TH1 and the second opening TH2 in the lower surfaces of the first frame 211 and the second frame 212 may be several hundred micrometers. A width W3 between the first opening TH1 and the second opening TH2 in the lower surface area of the first frame 211 and the second frame 212 is, for example, 100 micrometers to 150 micrometers. can be provided as

The width W3 between the first opening TH1 and the second opening TH2 in the lower surface area of the first frame 211 and the second frame 212 is the light emitting device package according to the embodiment ( 200) may be selected to be provided at a certain distance or more in order to prevent an electrical short between pads from occurring when mounted on a circuit board, submount, etc. later.

The light emitting device package 200 according to the embodiment may include a resin part 230 .

The resin part 230 may be disposed between the body 213 and the light emitting device 100 . The resin part 230 may be disposed between the upper surface of the body 213 and the lower surface of the light emitting device 100 .

In addition, the light emitting device package 200 according to the embodiment may include a recess R, as shown in FIG. 3 .

The recess R may be provided in the body 213 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess R may be provided concavely from the upper surface of the body 213 to the lower surface thereof. The recess R may be disposed below the light emitting device 100 . The recess R may overlap the light emitting device 100 in the first direction.

For example, the resin part 230 may be disposed in the recess R. The resin part 230 may be disposed between the light emitting device 100 and the body 213 . The resin part 230 may be disposed between the first bonding pad 171 and the second bonding pad 172 . For example, the resin part 230 may be disposed in contact with the side surfaces of the first bonding pad 171 and the side surface of the second bonding pad 172 .

The resin part 230 may provide a stable fixing force between the light emitting device 100 and the package body 210 . The resin part 230 may provide a stable fixing force between the light emitting device 100 and the body 213 . For example, the resin part 230 may be disposed in direct contact with the upper surface of the body 213 . In addition, the resin part 230 may be disposed in direct contact with the lower surface of the light emitting device 100 .

For example, the resin part 230 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. there is. Also, as an example, when the resin part 230 includes a reflective function, the adhesive may include white silicone.

The resin part 230 can provide a stable fixing force between the body 213 and the light emitting element 100, and when light is emitted to the lower surface of the light emitting element 100, the light emitting element 100 and A light diffusing function may be provided between the bodies 213 . When light is emitted from the light emitting device 100 to the lower surface of the light emitting device 100, the resin part 230 provides a light diffusing function, thereby improving the light extraction efficiency of the light emitting device package 200. . Also, the resin part 230 may reflect light emitted from the light emitting device 100 . When the resin part 230 includes a reflective function, the resin part 230 may be made of a material including TiO ₂ , SiO ₂ , and the like.

According to the embodiment, the depth T1 of the recess R may be provided smaller than the depth T2 of the first opening TH1 or the depth T2 of the second opening TH2.

The depth T1 of the recess R may be determined in consideration of the adhesive strength of the resin part 230 . In addition, the depth T1 of the recess R takes into consideration the stable strength of the body 213 and/or cracks the light emitting device package 200 due to heat emitted from the light emitting device 100. ) can be determined so that it does not occur.

The recess R may provide an appropriate space in which a kind of underfill process can be performed under the light emitting device 100 . Here, the under fill process may be a process of disposing the resin part 230 under the light emitting device 100 after mounting the light emitting device 100 on the package body 210, and the light emitting device In the process of mounting the (100) on the package body 210, the resin part 230 is placed in the recess R to be mounted through the resin part 230, and then the light emitting element 100 is disposed it can be fair

The recess R may be provided with a first depth or greater so that the resin part 230 can be sufficiently provided between the lower surface of the light emitting device 100 and the upper surface of the body 213 . In addition, the recess R may be provided with a second depth or less to provide stable strength of the body 213 .

The depth T1 and the width W4 of the recess R may affect the disposition position and fixing force of the resin part 230 . The depth T1 and the width W4 of the recess R may be determined so that sufficient fixing force can be provided by the resin part 230 disposed between the body 213 and the light emitting device 100. there is.

For example, the depth T1 of the recess R may be provided in several tens of micrometers. The depth T1 of the recess R may be 40 micrometers to 60 micrometers.

Also, the width W4 of the recess R may be tens of micrometers to hundreds of micrometers. Here, the width W4 of the recess R may be provided in the direction of the major axis of the light emitting device 100 .

A width W4 of the recess R may be narrower than a distance between the first bonding pad 171 and the second bonding pad 172 . The width W4 of the recess R may be 140 micrometers to 160 micrometers. For example, the width W4 of the recess R may be 150 micrometers.

The depth T2 of the first opening TH1 may correspond to the thickness of the first frame 211 . The depth T2 of the first opening TH1 may be provided with a thickness capable of maintaining stable strength of the first frame 211 .

The depth T2 of the second opening TH2 may correspond to the thickness of the second frame 212 . The depth T2 of the second opening TH2 may be provided with a thickness capable of maintaining stable strength of the second frame 212 .

The depth T2 of the first opening TH1 and the depth T2 of the second opening TH2 may correspond to the thickness of the body 213 . The depth T2 of the first opening TH1 and the depth T2 of the second opening TH2 may be provided with a thickness capable of maintaining stable strength of the body 213 .

For example, the depth T2 of the first opening TH1 may be several hundred micrometers. The depth T2 of the first opening TH1 may be 180 micrometers to 220 micrometers. For example, the depth T2 of the first opening TH1 may be 200 micrometers.

As an example, the thickness of (T2-T1) may be selected to be at least 100 micrometers or more. This is in consideration of the thickness of the injection process capable of providing the body 213 without cracks.

According to an embodiment, the ratio (T2/T1) of the T1 thickness to the T2 thickness may be provided as 2 to 10. As an example, if the thickness of T2 is provided as 200 micrometers, the thickness of T1 may be provided as 20 micrometers to 100 micrometers.

In addition, the light emitting device package 200 according to the embodiment may include a molding part 240 as shown in FIG. 3 .

The molding part 240 may be provided on the light emitting device 100 . The molding part 240 may be disposed on the first frame 211 and the second frame 212 . The molding part 240 may be disposed in the cavity C provided by the package body 210 .

The molding part 240 may include an insulating material. In addition, the molding part 240 may include a wavelength conversion means for receiving light emitted from the light emitting device 100 and providing wavelength-converted light. For example, the molding part 240 may be formed of at least one material selected from a group including phosphors and quantum dots.

In addition, the light emitting device package 200 according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 as shown in FIG. 3 . The first conductive layer 321 may be spaced apart from the second conductive layer 322 .

The first conductive layer 321 may be provided in the first opening TH1. The first conductive layer 321 may be disposed under the first bonding pad 171 . A width of the first conductive layer 321 may be smaller than that of the first bonding pad 171 .

The first bonding pad 171 may have a width in a second direction perpendicular to the first direction in which the first opening TH1 is disposed. A width of the first bonding pad 171 may be greater than a width of the first opening TH1 in the second direction.

The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding pad 171 . The first conductive layer 321 may be electrically connected to the first bonding pad 171 . The first conductive layer 321 may be surrounded by the first frame 211 . The lower surface of the first conductive layer 321 may be formed in a concave shape from the bottom to the top.

The second conductive layer 322 may be provided in the second opening TH2. The second conductive layer 322 may be disposed under the second bonding pad 172 . A width of the second conductive layer 322 may be smaller than that of the second bonding pad 172 .

The second bonding pad 172 may have a width in a second direction perpendicular to a first direction in which the second opening TH2 is disposed. A width of the second bonding pad 172 may be greater than a width of the second opening TH2 in the second direction.

The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding pad 172 . The second conductive layer 322 may be electrically connected to the second bonding pad 172 . The second conductive layer 322 may be disposed to be surrounded by the second frame 212 . The lower surface of the second conductive layer 322 may be formed in a concave shape from the bottom to the top.

The first conductive layer 321 and the second conductive layer 322 may include one material selected from a group including Ag, Au, Pt, Sn, Cu, or the like, or an alloy thereof. However, it is not limited thereto, and materials capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 .

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, and the like, and may be composed of multiple layers composed of different materials or multiple layers or single layers composed of alloys. For example, the first conductive layer 321 and the second conductive layer 322 may include a Sn-Ag-Cu (SAC) material.

According to the embodiment, in the process of forming the first and second conductive layers 321 and 322 or in the process of heat treatment after the first and second conductive layers 321 and 322 are provided, the first and second conductive layers 321 and 322 are formed. An intermetallic compound (IMC) layer may be formed between the layers 321 and 322 and the first and second frames 211 and 212 .

For example, the first and second conductive layers 321 and 322 are formed by a combination between the first and second metal layers 211a and 212a of the first and second frames 211 and 212. And second alloy layers 211b and 212b may be formed.

Accordingly, the first conductive layer 321 and the first frame 211 can be physically and electrically stably coupled. The first conductive layer 321, the first alloy layer 211b, and the first frame 211 can be physically and electrically stably bonded.

In addition, the second conductive layer 322 and the second frame 212 can be physically and electrically stably coupled. The second conductive layer 322, the second alloy layer 212b, and the second frame 212 can be physically and electrically stably coupled.

For example, the first and second alloy layers 211b and 212b may include at least one intermetallic compound layer selected from a group including AgSn, CuSn, and AuSn. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the first and second conductive layers 321 and 322, and the second material may be provided from the first and second conductive layers 321 and 322 . and support members of the second metal layers 211a and 212a or the first and second frames 211 and 212 .

When the first and second conductive layers 321 and 322 include a Sn material and the first and second metal layers 211a and 212a include an Ag material, the first and second conductive layers 321, 322) may be provided or an AgSn intermetallic compound layer may be formed by combining a Sn material and an Ag material during a heat treatment process after being provided.

In addition, when the first and second conductive layers 321 and 322 include a Sn material and the first and second metal layers 211a and 212a include an Au material, the first and second conductive layers ( 321 and 322) may form an intermetallic compound layer of AuSn by combining a Sn material and an Au material during a process of providing or a heat treatment process after being provided.

In addition, when the first and second conductive layers 321 and 322 include a Sn material and the support members of the first and second frames 211 and 212 include a Cu material, the first and second conductive layers 321 and 322 include a Cu material. An intermetallic compound layer of CuSn may be formed by combining a Sn material and a Cu material in a process of providing the conductive layers 321 and 322 or in a heat treatment process after the provision.

In addition, the first and second conductive layers 321 and 322 include an Ag material, and the first and second metal layers 211a and 211b or the support members of the first and second frames 211 and 212 are When the Sn material is included, an AgSn intermetallic compound layer may be formed by combining the Ag material and the Sn material during the process of providing the first and second conductive layers 321 and 322 or the heat treatment process after the provision.

The intermetallic compound layer described above may have a higher melting point than general bonding materials. In addition, the heat treatment process for forming the metallic compound layer may be performed at a lower temperature than the melting point of a general bonding material.

Therefore, even when the light emitting device package 200 according to the embodiment is bonded to a main substrate through a reflow process, a re-melting phenomenon does not occur, so that electrical connection and physical bonding strength are not deteriorated. There are advantages.

In addition, according to the light emitting device package 200 and the light emitting device package manufacturing method according to the embodiment, the package body 210 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 210 from being damaged or discolored due to exposure to high temperatures.

Accordingly, the range of choices for the material constituting the body 213 can be widened. According to the embodiment, the body 213 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic.

For example, the body 213 includes at least one material selected from the group consisting of PolyPhtal Amide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

Meanwhile, according to an embodiment, an intermetallic compound layer may also be formed between the first and second bonding pads 171 and 172 and the first and second conductive layers 321 and 322 .

Similarly as described above, according to the embodiment, in the process of forming the first and second conductive layers 321 and 322 or in the heat treatment process after the first and second conductive layers 321 and 322 are provided. An intermetallic compound (IMC) layer may be formed between the first and second conductive layers 321 and 322 and the first and second bonding pads 171 and 172 .

For example, an alloy layer may be formed by bonding between a material constituting the first and second conductive layers 321 and 322 and the first and second bonding pads 171 and 172 .

Accordingly, the first conductive layer 321 and the first bonding pad 171 can be physically and electrically more stably bonded. The first conductive layer 321, the alloy layer, and the first bonding pad 171 can be physically and electrically stably bonded.

In addition, the second conductive layer 322 and the second bonding pad 172 can be physically and electrically more stably bonded. The second conductive layer 322, the alloy layer, and the second bonding pad 172 can be physically and electrically stably bonded.

For example, the alloy layer may include at least one intermetallic compound layer selected from a group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the first and second conductive layers 321 and 322, and the second material may be provided from the first and second conductive layers 321 and 322 . and second bonding pads 171 and 172 .

When the first and second conductive layers 321 and 322 include Sn material and the first and second bonding pads 171 and 172 include Ag material, the first and second conductive layers 321 , 322) may be provided or an AgSn intermetallic compound layer may be formed by combining a Sn material and an Ag material during a heat treatment process after being provided.

In addition, when the first and second conductive layers 321 and 322 include a Sn material and the first and second bonding pads 171 and 172 include an Au material, the first and second conductive layers 321 and 322 include an Au material. An intermetallic compound layer of AuSn may be formed by combining a Sn material and an Au material in a process of providing (321, 322) or in a heat treatment process after being provided.

In addition, when the first and second conductive layers 321 and 322 include an Ag material and the first and second bonding pads 171 and 172 include a Sn material, the first and second conductive layers 321 and 322 include a Sn material. An intermetallic compound layer of AgSn may be formed by a combination of an Ag material and a Sn material during a process of providing (321, 322) or a heat treatment process after being provided.

The intermetallic compound layer described above may have a higher melting point than general bonding materials. In addition, the heat treatment process for forming the metallic compound layer may be performed at a lower temperature than the melting point of a general bonding material.

Therefore, even when the light emitting device package 200 according to the embodiment is bonded to a main substrate through a reflow process, a re-melting phenomenon does not occur, so that electrical connection and physical bonding strength are not deteriorated. There are advantages.

In addition, the light emitting device package 200 according to the embodiment may include a first lower recess R11 and a second lower recess R12 as shown in FIG. 3 . The first lower recess R11 and the second lower recess R12 may be spaced apart from each other.

The first lower recess R11 may be provided on a lower surface of the first frame 211 . The first lower recess R11 may be provided concavely from the lower surface of the first frame 211 to the upper surface. The first lower recess R11 may be spaced apart from the first opening TH1.

The first lower recess R11 may have a width of several micrometers to several tens of micrometers. A resin part may be provided in the first lower recess R11. The resin part filled in the first lower recess R11 may be provided with the same material as the body 213, for example.

However, it is not limited thereto, and the resin part may be provided by being selected from materials having poor adhesion and wettability with the first and second conductive layers 321 and 322 . Alternatively, the resin part may be provided by being selected from materials having low surface tension with the first and second conductive layers 321 and 322 .

For example, the resin part filled in the first lower recess R11 may be provided during a process in which the first frame 211, the second frame 212, and the body 213 are formed through an injection process or the like. can

The resin part filled in the first lower recess R11 may be disposed around a lower surface area of the first frame 211 providing the first opening TH1. An area of the lower surface of the first frame 211 providing the first opening TH1 may be disposed separately from the lower surface forming the surrounding first frame 211 in a kind of island shape.

For example, the lower surface area of the first frame 211 providing the first opening TH1 is surrounded by the resin part filled in the first lower recess R11 and the body 213. It may be isolated from frame 211 .

Therefore, the resin part is made of a material having poor adhesion or wettability with the first and second conductive layers 321 and 322 or a material having low surface tension between the resin part and the first and second conductive layers 321 and 322. When disposed, the first conductive layer 321 provided in the first opening TH1 escapes from the first opening TH1 and forms a resin part or the body 213 filled in the first lower recess R11. Diffusion beyond the can be prevented.

This indicates that the adhesive relationship between the first conductive layer 321 and the resin part and the body 213 or the wettability and surface tension between the resin part and the first and second conductive layers 321 and 322 are not good. it was used That is, a material constituting the first conductive layer 321 may be selected to have good adhesion characteristics with the first frame 211 . Also, a material constituting the first conductive layer 321 may be selected to have poor adhesion properties with the resin part and the body 213 .

Accordingly, the first conductive layer 321 overflows from the first opening TH1 in the direction of the region where the resin part or the body 213 is provided, and is outside the region where the resin part or the body 213 is provided. is prevented from overflowing or spreading, and the first conductive layer 321 can be stably disposed in the region provided with the first opening TH1.

Therefore, when the first conductive layer 321 disposed in the first opening TH1 overflows, the first conductive layer 321 flows out of the first lower recess R11 provided with the resin part or the body 213 . The expansion of the conductive layer 321 may be prevented. In addition, the first conductive layer 321 can be stably connected to the lower surface of the first bonding pad 171 within the first opening TH1.

Therefore, when the light emitting device package is mounted on a circuit board, it is possible to prevent a short circuit problem in which the first conductive layer 321 and the second conductive layer 322 come into contact with each other, and the first and second conductive layers ( In the process of disposing the first and second conductive layers 321 and 322 , it may be very easy to control the amounts of the first and second conductive layers 321 and 322 .

Also, the second lower recess R12 may be provided on a lower surface of the second frame 212 . The second lower recess R12 may be provided to be concave from the lower surface of the second frame 212 toward the upper surface. The second lower recess R12 may be spaced apart from the second opening TH2.

The second lower recess R12 may have a width of several micrometers to several tens of micrometers. A resin part may be provided in the second lower recess R12. The resin part filled in the second lower recess R12 may be provided with the same material as the body 213, for example.

However, it is not limited thereto, and the resin part may be provided by being selected from materials having poor adhesion and wettability with the first and second conductive layers 321 and 322 . Alternatively, the resin part may be provided by being selected from materials having low surface tension with the first and second conductive layers 321 and 322 .

For example, the resin part filled in the second lower recess R12 may be provided in a process in which the first frame 211, the second frame 212, and the body 213 are formed through an injection process or the like. can

The resin part filled in the second lower recess R12 may be disposed around a lower surface area of the second frame 212 providing the second opening TH2 . An area of the lower surface of the second frame 212 providing the second opening TH2 may be disposed separately from the lower surface forming the surrounding second frame 212 in a kind of island shape.

For example, the lower surface area of the second frame 212 providing the second opening TH2 is surrounded by the resin part filled in the second lower recess R12 and the body 213. It may be isolated from frame 212 .

Therefore, the resin part is made of a material having poor adhesion or wettability with the first and second conductive layers 321 and 322 or a material having low surface tension between the resin part and the first and second conductive layers 321 and 322. When disposed, the second conductive layer 322 provided in the second opening TH2 escapes from the second opening TH2 and forms a resin portion filled in the second lower recess R12 or the body 213. Diffusion beyond the can be prevented.

This is because the adhesive relationship between the second conductive layer 322, the resin part, and the body 213 or the wettability, surface tension, etc. between the resin part and the first and second conductive layers 321 and 322 are not good. it was used That is, a material constituting the second conductive layer 322 may be selected to have good adhesion characteristics with the second frame 212 . Also, a material constituting the second conductive layer 322 may be selected to have poor adhesion properties with the resin part and the body 213 .

Accordingly, the second conductive layer 322 overflows from the second opening TH2 in the direction of the area where the resin part or the body 213 is provided, outside the area where the resin part or the body 213 is provided. overflowing or spreading is prevented, and the second conductive layer 322 can be stably disposed in the region provided with the second opening TH2.

Therefore, when the second conductive layer 322 disposed in the second opening TH2 overflows, the resin portion or the body 213 is directed to the outer region of the second lower recess R12 provided with the second conductive layer 322 . The expansion of the conductive layer 322 may be prevented. In addition, the second conductive layer 322 can be stably connected to the lower surface of the second bonding pad 172 within the second opening TH2.

Therefore, when the light emitting device package is mounted on a circuit board, it is possible to prevent a short circuit problem in which the first conductive layer 321 and the second conductive layer 322 come into contact with each other, and the first and second conductive layers ( In the process of disposing the first and second conductive layers 321 and 322 , it may be very easy to control the amounts of the first and second conductive layers 321 and 322 .

Meanwhile, according to the light emitting device package 200 according to the embodiment, the resin part 230 provided in the recess R, as shown in FIG. It may be provided between the top surface of the package body 210. When viewed from the top of the light emitting device 100 , the resin part 230 may be provided around the first and second bonding pads 171 and 172 . Also, when viewed from the top of the light emitting device 100, the resin part 230 may be provided around the first and second openings TH1 and TH2.

The resin part 230 may perform a function of stably fixing the light emitting device 100 to the package body 210 . In addition, the resin part 230 may contact side surfaces of the first and second bonding pads 171 and 172 and may be disposed around the first and second bonding pads 171 and 172 .

The resin part 230 may seal around the first bonding pad 171 and the second bonding pad 172 . In the resin part 230, the first conductive layer 321 and the second conductive layer 322 are outside the first opening TH1 area and the second opening TH2 area, and the light emitting element 100 It is possible to prevent diffusion and movement in the direction of the outer surface. When the first and second conductive layers 321 and 322 diffuse and move in the direction of the outer surface of the light emitting device 100, the first and second conductive layers 321 and 322 are the active layer and the active layer of the light emitting device 100. It can come into contact with it, which can cause defects due to short circuits. Accordingly, when the resin part 230 is disposed, a short circuit between the first and second conductive layers 321 and 322 and the active layer can be prevented, thereby improving reliability of the light emitting device package according to the embodiment.

In addition, in the resin part 230, the first conductive layer 321 and the second conductive layer 322 deviate from the first opening TH1 area and the second opening TH2 area, and the light emitting element ( It is possible to prevent diffusion and movement under the lower surface of 100 in the direction of the recess (R). Accordingly, it is possible to prevent the first conductive layer 321 and the second conductive layer 322 from being electrically shorted under the light emitting device 100 .

Meanwhile, the light emitting device package 200 according to the embodiment described above may be supplied mounted on a submount or a circuit board.

However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in a bonding area between the lead frame provided in the light emitting device package and the light emitting device, so that stability of electrical connection and physical coupling may be weakened.

However, according to the light emitting device package and the manufacturing method of the light emitting device package according to the embodiment, the bonding portion of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. In addition, the melting point of the conductive layer disposed in the opening and the melting point of the intermetallic compound layer may be selected to have a higher value than the melting point of a general bonding material.

Therefore, even when the light emitting device device package 200 according to the embodiment is bonded to the main substrate through a reflow process, since a re-melting phenomenon does not occur, electrical connection and physical bonding strength are not deteriorated. There are advantages to not

In addition, according to the light emitting device package 200 and the light emitting device package manufacturing method according to the embodiment, the package body 210 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 210 from being damaged or discolored due to exposure to high temperatures.

According to the embodiment, a light emitting device capable of improving light output by improving optical and electrical characteristics by suppressing a peeling phenomenon between a reflective layer and an ohmic contact layer by blocking or dispersing the transmission of stress generated in the pad region to the ohmic contact layer , a light emitting device package, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, a light emitting device, a light emitting device package, a manufacturing method thereof, and a light source device including the same, in which electrical reliability is improved by fundamentally blocking the peeling phenomenon between the ohmic contact layer and the passivation by separating the ohmic contact layer and the passivation layer can provide

In addition, according to the embodiment, it is possible to provide a light emitting device package having excellent electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device, a manufacturing method thereof, and a light source device including the same. For example, according to the light emitting device package and the light emitting device manufacturing method according to the embodiment, re-melting in the bonding area of the light emitting device package is prevented from occurring in the process of re-bonding the light emitting device package to a substrate or the like. There are technical effects that can be done.

Further, according to embodiments, a light emitting device package capable of improving bonding strength between a package body and a light emitting device, a manufacturing method thereof, and a light source device including the same may be provided.

In addition, according to the embodiment, it is possible to provide a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield through process efficiency improvement and structural change, a manufacturing method thereof, and a light source device including the same.

(Light emitting element of the second embodiment)

7 is a cross-sectional view of a light emitting device 102 according to the second embodiment, and FIG. 8 is a plan view of the light emitting device according to the second embodiment. FIG. 8 is a cross-sectional view taken along line A3-A4 of FIG. 7 .

9A to 9G are planar layouts for each layer of the light emitting device according to the second embodiment.

Hereinafter, technical features of the light emitting device 102 according to the second embodiment will be described in detail with reference to FIGS. 7, 8, and 9A to 9G. The second embodiment may employ the technical characteristics of the light emitting device 100 according to the above-described embodiment, and hereinafter, the main characteristics of the second embodiment will be mainly described.

Referring first to FIG. 7 , the light emitting device 102 according to the second embodiment includes a light emitting structure 110, a first electrode 141, a second electrode 142, a first bonding pad 171, and a second bonding Any one or more of the pad 172 , the ohmic contact layer 130 , the reflective layer 160 and the protective layer 150 may be included.

For example, the light emitting device 102 according to the second embodiment includes a first conductivity type semiconductor layer 111, a second conductivity type semiconductor layer 113, the first conductivity type semiconductor layer 111 and the second conductivity type semiconductor layer 111. A light emitting structure 110 including an active layer 112 disposed between conductive semiconductor layers 113 and disposed on the first conductive semiconductor layer 111, the first conductive semiconductor layer 111 A first electrode 141 electrically connected to and a second electrode 142 disposed on the second conductivity type semiconductor layer 113 and electrically connected to the second conductivity type semiconductor layer 113; A first bonding pad 171 disposed on the first electrode 141 and the second electrode 142 and electrically connected to the first electrode 141, and the first electrode 141 and the second electrode It may include a second bonding pad 172 disposed above 142, spaced apart from the first bonding pad 171, and electrically connected to the second electrode 142.

In the second embodiment, the ohmic contact layer 130 disposed on the upper surface of the light emitting structure 110, between the ohmic contact layer 130 and the first bonding pad 171, and the ohmic contact layer 130 ) and the reflective layer 160 disposed between the second bonding pad 172, and protection disposed on the side surface of the reflective layer 160, a portion of the first electrode 141, and a portion of the second electrode 141. Layer 150 may be included.

<Substrate, light emitting structure>

The second embodiment may include the light emitting structure 110 disposed on the substrate 105, which may employ technical features of the light emitting device 100 according to the above-described embodiment.

<Current diffusion layer, ohmic contact layer, reflective layer>

Next, the light emitting device 102 according to the second embodiment may include a current diffusion layer 120 .

The current spreading layer 120 can increase light output by improving current spreading. For example, the current spreading layer 120 may be made of oxide or nitride. The current spreading layer 120 may prevent current from being concentrated under the second electrode 142 .

9A is a conceptual diagram for disposing the current spreading layer 120, and then the current spreading layer 120 may be disposed to correspond to the lower side of the region where the second electrode 142 is disposed. For example, in the cross section of FIG. 9A, the current spreading layer 120 may correspond to the current spreading layer 120 shown in FIG. 7, and may be disposed at a position overlapping the second electrode 142 vertically.

The remaining current spreading layers 120 shown in FIG. 9A may also be disposed at positions overlapping the second electrode 142 (refer to FIG. 9D ) in a vertical direction.

Next, the light emitting device 102 according to the second embodiment may include an ohmic contact layer 130 as shown in FIG. 7 . The ohmic contact layer 130 may increase light output by improving current diffusion.

For example, the ohmic contact layer 130 may include at least one selected from a group including a metal, a metal oxide, and a metal nitride. The ohmic contact layer 130 may include a light-transmitting material.

9B is a conceptual diagram for disposing the ohmic contact layer 130, which can contribute to current diffusion by being entirely disposed on the light emitting structure 110. For example, the ohmic contact layer 130 in the cross section along the line A3-A4 in FIG. 8 may be disposed on the second conductivity type semiconductor layer 113 as shown in FIG. 7 to contribute to current diffusion.

As shown in FIG. 7 , the area of the ohmic contact layer 130 is smaller than the area of the upper surface of the second conductivity type semiconductor layer 113, but is not limited thereto, and the area of the ohmic contact layer 130 and the area of the ohmic contact layer 130 The top surface of the second conductivity type semiconductor layer 113 may have the same area.

Therefore, since the process of disposing the ohmic contact layer 130 and the process of forming the upper surface of the second conductivity-type semiconductor layer 113 can be configured through one process, the process time can be shortened, and the ohmic contact layer 130 can be shortened. Since the area of the contact layer 130 can be disposed as large as possible, electrical characteristics of the light emitting device can be improved.

On the other hand, as shown in FIGS. 9B and 7 , the ohmic contact layer 130 has a first through hole R1 at a position corresponding to the position where the first electrode 141 (see FIG. 9D) is disposed. , and then the first electrode 141 may be electrically connected to the first conductive semiconductor layer 111 through the first through hole R1.

Next, the light emitting device 102 according to the second embodiment may include a reflective layer 160 as shown in FIG. 7 . The reflective layer 160 may be disposed on the ohmic contact layer 130 and reflect light emitted from the light emitting structure 110 to improve luminous intensity.

FIG. 9C is a conceptual diagram for disposing the reflective layer 160. For example, the reflective layer 160 in the cross section of FIG. 9C is on the light emitting structure 110 and the ohmic contact layer 130 as shown in FIG. It may correspond to the disposed reflective layer 160 .

Meanwhile, as shown in FIGS. 9C and 7 , the reflective layer 160 has the first opening H1 at a position corresponding to the position where the first electrode 141 (see FIG. 9D ) is disposed, so that the subsequent first opening H1 is provided. The first electrode 141 may be electrically connected to the first conductive semiconductor layer 111 through the first opening H1.

In addition, as shown in FIGS. 9C and 7 , the reflective layer 160 has a second opening H2 at a position corresponding to the position where the second electrode 142 (see FIG. 9D ) is disposed, so that the second opening H2 is provided thereafter. The second electrode 142 may be electrically connected to the ohmic layer through the second opening H2.

The reflective layer 160 may be an insulating reflective layer 160 . For example, the reflective layer 160 may include a Distributed Bragg Reflector (DBR) or an Omni Directional Reflector (ODR), but is not limited thereto.

In addition, the reflective layer 160 may include an Omni Directional Reflector (ODR) layer, and the ODR layer of the reflective layer 160 may be implemented to have a lower refractive index than that of the light emitting structure 110, for example. there is. In addition, some areas of the reflective layer 160 may include an insulating layer, while other areas may include a conductive layer.

Accordingly, according to the embodiment, a light emitting device, a light emitting device package, and a lighting device including the light emitting device capable of improving luminous intensity Po by minimizing light absorption by reflecting light emitted from the active layer, which is a light emitting layer, in the reflective layer 160 can provide

In addition, according to the embodiment, since light absorption can be minimized, when the light emitting device is mounted in a flip chip type, light intensity can be remarkably improved as light emitting from six sides is possible based on the light emitting structure.

FIG. 9E is a schematic diagram of the protective layer 150. The protective layer 150 includes a third through-hole (R3) for electrically connecting the first electrode 141 and the first bonding pad 171 (see FIG. 9F). ) may be included. In addition, the protective layer 150 may include a fourth through-hole R4 for electrically connecting the second electrode 142 and the second bonding pad 172 (see FIG. 9F ).

Referring also to FIG. 7 , in an exemplary embodiment, the protective layer 150 may be disposed around an outer periphery of the reflective layer 160 .

<Electrode, protective layer, bonding pad>

Next, referring to FIG. 7 , the light emitting device 102 according to the embodiment may include a first electrode 141 and a second electrode 142 .

The first electrode 141 may be electrically connected to the first conductive semiconductor layer 111 within the first opening h1. The first electrode 141 may be disposed on the first conductivity type semiconductor layer 111 . For example, according to the light emitting device 102 according to the second embodiment, the first electrode 141 penetrates the second conductivity type semiconductor layer 113 and the active layer 112 to form the first conductivity type semiconductor layer. It may be disposed on the upper surface of the first conductivity type semiconductor layer 111 in a recess extending to a partial region of (111).

The first electrode 141 may be electrically connected to the upper surface of the first conductive semiconductor layer 111 through the first opening h1 provided in the reflective layer 160 . The first opening h1 and the recess may vertically overlap each other.

A side surface of the first opening h1 and a side surface of the recess may have different inclination angles. An inclination angle formed between the side surface of the first opening h1 and the bottom surface of the recess may be different from an inclination angle formed between the side surface of the recess and the bottom surface of the recess.

When the reflective layer 160 is disposed in the recess, the inclination angle formed between the side surface of the recess and the bottom surface of the recess and the second surface of the recess due to step-coverage characteristics in the process of disposing the reflective layer 160 An inclination angle between the side surface of the first opening h1 and the bottom surface of the recess may be different from each other.

Therefore, the horizontal width of the reflective layer 160 disposed under the recess may be different from the horizontal width of the reflective layer 160 disposed above the recess. Electrical reliability of the semiconductor device is improved and the reflective layer ( 160) can improve optical properties.

Also, the second electrode 142 may be electrically connected to the second conductivity type semiconductor layer 113 . The second electrode 142 may be disposed on the second conductivity type semiconductor layer 113 . According to the second embodiment, the ohmic contact layer 130 may be disposed between the second electrode 142 and the second conductivity type semiconductor layer 113 .

The second electrode 142 may be electrically connected to the second conductive semiconductor layer 113 through the second opening h2 provided in the reflective layer 160 . For example, as shown in FIG. 7 , the second electrode 142 may be electrically connected to the second conductivity type semiconductor layer 113 through the ohmic contact layer 130 .

According to the embodiment, as shown in FIG. 9D , the first electrode 141 and the second electrode 142 may have polarities and may be spaced apart from each other.

For example, the first electrode 141 may be provided in a plurality of line shapes.

Meanwhile, in the second embodiment, the second electrode 142 is spaced apart from the first electrode 141 and occupies an area other than the first electrode 141, thereby improving electrical characteristics. For example, the second electrode 142 in the second embodiment may be disposed on the entire surface of the reflective layer 160 except for the first electrode 141 .

When the first electrode 141 and the second electrode 142 have different polarities, they may have different numbers of electrodes. For example, when the first electrode 141 is composed of an n electrode and the second electrode 142 is composed of a p electrode, the area occupied by the second electrode 142 is greater than the area of the first electrode 141. could be wider

Referring to FIG. 9D , in an embodiment, a substrate 105 includes a first surface extending in a first direction and a second surface extending in a second direction perpendicular to the first direction, and The length of the first surface may be greater than the length of the second surface in the second direction.

Meanwhile, the first electrode 141 of the second embodiment extends in the first direction and includes a first contact electrode 141a and a second contact electrode 141b positioned on one side and the other side of the first surface, respectively. can

The first contact electrode 141a and the second contact electrode 141b may be disposed on the reflective layer 160 . Meanwhile, referring to FIG. 8 , a contact electrode extending below the first contact electrode 141a and the second contact electrode 141b may be included, which corresponds to the third contact electrode 141c described later, and It can come into contact with the one-conductivity semiconductor compound 111.

In addition, the second embodiment may include a third contact electrode 141c spaced apart from each other in the first direction and disposed between the first contact electrode 141a and the second contact electrode 141b.

The third contact electrode 141c is a via type contact electrode and may come into contact with the first conductivity type semiconductor layer 111 .

Also, the second embodiment may include a connection electrode 141d disposed between the first contact electrode 141a to the third contact electrode 141c.

The connection electrode 141d may be disposed on the reflective layer 160 .

According to the second embodiment, horizontal cross sections of the first contact electrode 141a and the second contact electrode 141b disposed on one side and the other side of the substrate 105 may be the same or similar. Accordingly, current is not supplied biased to one side of the substrate 105, but current is injected symmetrically to both sides, so that optical characteristics can be improved by current diffusion.

Also, the area of the first contact electrode 141a and the second contact electrode 141b may be larger than the area of the third contact electrode 141c serving as a point contact.

Meanwhile, the width of the connection electrode 141d in the second direction may be smaller than that of the first contact electrode 141a to the third contact electrode 141c in the second direction. Through this, loss or removal of the active layer in a region other than the contact electrode can be prevented.

In particular, the second electrode 142 in the second embodiment may be disposed on the entire surface of the reflective layer 160 except for the first electrode 141 . Through this, technology capable of improving reliability by preventing or alleviating the peeling phenomenon between the reflective layer 160 and the second electrode 142 by buffering the stress applied to the light emitting device chip during solder bonding. It has a characteristic.

In addition, according to the second embodiment, a hybrid DBR structure can be designed due to the optical design of the second electrode 142 and the reflective layer 160, and through this, there is a technical feature in that light output can be improved due to the increase in reflectivity. .

For example, the second electrode 142 may include a metal layer arrangement such as Cr/Al/Ti/Ni/Ti/Ni/Cu/Au, etc. An excellent hybrid DBR structure design may be possible.

When the second conductivity type semiconductor layer 113 and the first conductivity type semiconductor layer 111 have different electrical conductivity and/or resistance, the first electrode 141 and the second electrode 142 Electrons and holes injected into the light emitting structure 110 may be balanced, and thus optical characteristics of the semiconductor device may be improved.

The first electrode 141 and the second electrode 142 may be formed in a single-layer or multi-layer structure. For example, the first electrode 141 and the second electrode 142 may be ohmic electrodes. For example, the first electrode 141 and the second electrode 142 may be ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or at least one or an alloy of two or more of these materials.

The light emitting device 102 according to the second embodiment may include a protective layer 150 as shown in FIGS. 7 and 9E .

The protective layer 150 may include a plurality of third recesses R3 exposing the first electrode 141 . In addition, the protective layer 150 may include a plurality of fourth recesses R4 exposing the second electrode 142 .

Referring to FIG. 7 , the protective layer 150 may be disposed on the reflective layer 160 . The protective layer 150 may be disposed on the reflective layer 160 . The protective layer 150 may be provided with an insulating material. For example, the protective layer 150 is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group including Si _x N _y and Al _x O _y .

Next, as shown in FIGS. 7 and 9F , the light emitting device 102 according to the second embodiment includes a first bonding pad 171 and a second bonding pad 172 disposed on the protective layer 150 . ) may be included.

Through this, as shown in FIGS. 8 and 9G , the light emitting device 102 according to the second embodiment can be completed.

The first bonding pad 171 and the second bonding pad 172 may be disposed on the reflective layer 160 . The second bonding pad 172 may be spaced apart from the first bonding pad 171 .

The first bonding pad 171 may contact the upper surface of the first electrode 141 through the plurality of third recesses R3 provided in the protective layer 150 .

Also, the second bonding pad 172 may contact the upper surface of the second electrode 142 through the plurality of fourth recesses R4 provided in the protective layer 150 .

In addition, according to the light emitting device 102 according to the second embodiment, as shown in FIG. 7 , the reflective layer 160 is disposed under the first electrode 141 and the second electrode 142, so that the The reflective layer 160 reflects light emitted from the active layer 112 of the light emitting structure 110 to minimize light absorption in the first electrode 141 and the second electrode 142 to increase the luminous intensity Po. can improve

For example, the reflective layer 160 may be made of an insulating material, but a material having high reflectivity, for example, a DBR structure, may be used to reflect light emitted from the active layer 114 .

The reflective layer 160 may form a DBR structure in which materials having different refractive indices are repeatedly disposed. For example, the reflective layer 160 may have a single-layer or multilayer structure including at least one of TiO ₂ , SiO ₂ , Ta ₂ O ₅ , and HfO ₂ .

In addition, according to another embodiment, without being limited thereto, the reflective layer 160 may be selected to adjust the reflectivity of light emitted from the active layer 112 according to the wavelength of light emitted from the active layer 112. can

Also, according to another embodiment, the reflective layer 160 may be provided as an ODR layer as described above. According to another embodiment, the reflective layer 160 may be provided in a kind of hybrid form in which a DBR layer and an ODR layer are stacked.

The semiconductor device 102 according to the second embodiment may be connected to an external power source using a flip chip bonding method. For example, in manufacturing a semiconductor device package, the upper surface of the first bonding pad 171 and the upper surface of the second bonding pad 172 may be disposed such that they are attached to a sub-mount, a lead frame, or a circuit board. there is.

For example, since the first bonding pad 171 and the second bonding pad 172 are formed of Au, AuTi, etc., a mounting plant can be stably performed. In addition, the first bonding pad 171 and the second bonding pad 172 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, etc. can be formed

When the semiconductor device according to the embodiment is mounted in a flip chip bonding method and implemented as a semiconductor device package, light provided from the light emitting structure 110 may be emitted through the substrate 105 . Light emitted from the light emitting structure 110 may be reflected by the reflective layer 160 and emitted toward the substrate 105 .

In addition, light emitted from the light emitting structure 110 may also be emitted in a lateral direction of the light emitting structure 110 . In addition, light emitted from the light emitting structure 110 is bonded to the first bonding pad 171 and the second bonding pad 171 and the second bonding pad 171 among the surfaces on which the second bonding pad 172 is disposed. The pad 172 may be emitted to the outside through an area not provided.

Specifically, the light emitted from the light emitting structure 110 passes through an area where the reflective layer 160 is not provided, among the surfaces where the first bonding pad 171 and the second bonding pad 172 are disposed. may be released to the outside.

Accordingly, the light emitting device 102 according to the second embodiment can emit light in six directions surrounding the light emitting structure 110, and can significantly improve the luminous intensity.

In addition, according to the semiconductor device and the semiconductor device package according to the embodiment, since the first bonding pad 171 and the second bonding pad 172 having a large area can be directly bonded to a circuit board providing power, the flip The chip bonding process can be performed easily and stably.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, and effects illustrated in each embodiment can be combined or modified with respect to other embodiments by those skilled in the art in the field to which the embodiments belong. Therefore, contents related to these combinations and modifications should be construed as being included in the scope of the embodiments.

Although the above has been described centering on the embodiment, this is only an example and does not limit the embodiment, and those skilled in the art in the field to which the embodiment belongs may find various things not exemplified above to the extent that they do not deviate from the essential characteristics of the embodiment. It will be appreciated that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the embodiments set forth in the appended claims.

The light emitting element 100, the light emitting structure 110, the first electrode 141, the second electrode 142,
The first bonding pad 171, the second bonding pad 172, the ohmic contact layer 130,
The first reflective layer 161, the second reflective layer 162, the third reflective layer 163, and the protective layer 150

Claims (12)

a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
a current spreading layer disposed on the second conductivity type semiconductor layer;
an ohmic contact layer disposed on the current diffusion layer and the second conductivity type semiconductor layer;
first, second and third reflective layers disposed on the light emitting structure and the ohmic contact layer;
a protective layer disposed on the first and second reflective layers;
a first electrode disposed on the first reflective layer and electrically connected to the first conductivity type semiconductor layer; and
A second electrode disposed on the second reflective layer and electrically connected to the ohmic contact layer;
The first reflective layer is disposed between the light emitting structure and the first electrode,
The second reflective layer is disposed between the light emitting structure and the second electrode,
The first reflective layer and the second reflective layer are spaced apart from each other,
The first and second reflective layers are made of the same material,
The protective layer is disposed to surround the first and second reflective layers,
The protective layer is spaced apart from the ohmic contact layer,
Bottom surfaces of the first and second reflective layers are disposed lower than the active layer and directly contact the first conductivity type semiconductor layer;
The third reflective layer is disposed between the first reflective layer and the second reflective layer,
The protective layer includes a first protective layer disposed between the first reflective layer and the third reflective layer, and a second protective layer disposed between the second reflective layer and the third reflective layer,
The first protective layer and the second protective layer directly contact the ohmic contact layer. According to claim 1,
The third reflective layer is in contact with the protective layer. According to claim 1,
The first electrode is disposed between the passivation layer and the first reflective layer,
A light emitting device in which the second electrode is disposed between the passivation layer and the second reflective layer According to claim 1,
a first bonding portion electrically connected to the first conductivity-type semiconductor layer;
Further comprising a second bonding portion electrically connected to the second conductivity type semiconductor layer,
The first bonding part,
a plurality of spaced apart bonding areas; and
A connection region electrically connecting the bonding regions between the spaced bonding regions;
A distance between the plurality of bonding areas spaced apart in a first direction is 3% to 12% of a length of the first bonding portion in the first direction or in a second direction perpendicular to the first direction. According to claim 4,
A distance between the plurality of bonding areas spaced apart in the second direction is 3% to 12% of a length of the first bonding portion in the first direction or the second direction. According to claim 1,
The ohmic contact layer is
A light emitting device comprising a second through hole in an area corresponding to the separation area of the first and second reflective layers and a fifth through hole on both sides of the second through hole. delete delete delete delete delete delete

Images