KR20120048401A - Light emitting device - Google Patents

Abstract

PURPOSE: A light emitting device is provided to increase reliability and color rendition of a light emitting structure by filling a cavity of the upper side of the light emitting structure with encapsulating material. CONSTITUTION: A light emitting structure(150) is formed on the first supporting member(110). The light emitting structure comprises a first semiconductor layer(152), a second semiconductor layer(154), and an active layer(156). A first electrode(120) is formed between the first supporting member and the first semiconductor layer of the light emitting structure. A second electrode(190) is formed on the second semiconductor layer of the light emitting structure. A second supporting member(170) is formed on the semiconductor structure. A wiring is connected to the second semiconductor layer and the first semiconductor layer.

Description

Light Emitting Device

The embodiment relates to a light emitting device, and more particularly, the light emitting device can increase the structural stability and reliability of the light emitting device and further increase the resistance to ESD by removing the zener diode, the substrate, and forming the supporting member. It relates to a light emitting device that is easy to fix the coating.

Fluorescent lamps are increasingly being replaced by other light sources because they are against the trend of the future lighting market aiming to be environmentally friendly due to frequent replacement and the use of fluorescent materials.

The most popular light source is LED (Light Emitting Diode), which has the advantages of fast processing speed and low power consumption of semiconductor, and it is considered as next generation light source because it is environmentally friendly and has high energy saving effect. Therefore, the use of LED to replace the existing fluorescent lamp is actively in progress.

Currently, semiconductor light emitting devices such as LEDs are applied to various devices including televisions, monitors, notebooks, mobile phones, and other display devices, and in particular, are widely used as backlight units in place of existing CCFLs.

Recently, high brightness is required to use a light emitting device as an illumination light source, and in order to achieve such high brightness, research is being conducted to manufacture a light emitting device capable of increasing light emission efficiency by uniformly spreading current.

Embodiments provide a light emitting device that increases structural stability and reliability of a light emitting device by removing a substrate and forming a supporting member.

The embodiment provides a light emitting device having an easy coating process.

The embodiment provides a light emitting device in which a sealing material is filled in a cavity on an upper side of a light emitting structure, thereby increasing reliability and color rendering of the light emitting structure.

The embodiment provides a light emitting device capable of having better ESD resistance by a semiconductor structure separated by a light emitting structure and an insulating material or an insulating space.

The light emitting device according to the embodiment may include a light emitting structure including a first support member, a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed on the first support member, the light emitting structure, and the first insulating layer. A semiconductor structure separated in between, a wiring connected to the second semiconductor layer of the light emitting structure and connected to the first semiconductor layer of the semiconductor structure, and disposed between the first supporting member and the first semiconductor layer of the light emitting structure The second electrode may include a first electrode, a second electrode disposed on the second semiconductor layer of the light emitting structure, and a second support member formed on the semiconductor structure. A second support member and a side surface of the light emitting structure, the second supporting member being formed on the first electrode exposed from an upper circumference of the light emitting structure from an upper portion of the semiconductor structure This at least is possible to include a second insulating layer formed on the side surface of the side of the active layer and the second semiconductor layer.

By removing the substrate and forming the support member, there is an advantage of increasing structural stability and reliability of the light emitting device.

In addition, when the second support member is formed of a carrier wafer containing silicon, it is not necessary to use a thick PR (Photo Resist), which is difficult to control the process during pattern formation in a subsequent coating process, and there is an advantage in that the pattern process can be omitted. .

In addition, as a Zener-mounted light emitting device, there is an advantage that the light emitting device can be more effectively protected from electrostatic discharge (ESD) by removing the substrate and forming the supporting member.

1 is a plan view illustrating a light emitting device according to an embodiment.
FIG. 2 is a cross-sectional view illustrating a plane taken along line II ′ of the light emitting device of FIG. 1.
3 is a cross-sectional view illustrating a light emitting device according to another embodiment.
4 to 9 are process flowcharts showing the manufacturing process of the light emitting device according to the embodiment.
10 is a cross-sectional view of a light emitting device package including the light emitting device of the embodiment.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Thus, in some embodiments, well known process steps, well known device structures, and well-known techniques are not specifically described to avoid an undesirable interpretation of the present invention. Like reference numerals refer to like elements throughout.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size and area of each component does not necessarily reflect the actual size or area.

In addition, the angle and direction mentioned in the process of describing the structure of the light emitting device in the embodiment are based on those described in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 is a plan view illustrating a light emitting device according to an embodiment, and FIG. 2 is a cross-sectional view illustrating a plane taken along line II ′ of the light emitting device of FIG. 1.

1 and 2, the light emitting device 100 according to the embodiment may include a light emitting semiconductor structure 150 on the first support member 110 and the first support member 110.

The first support member 110 may be formed using a material having excellent thermal conductivity and may be formed of a conductive material, and may be formed using a metal material or a conductive ceramic. The first support member 110 may be formed in a single layer, or may be formed in a double structure or multiple structures.

In an embodiment, the first support member 110 will be described as having conductivity.

That is, the first support member 110 includes a substrate, and copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), and a carrier wafer (eg, Si , Ge, GaAs, ZnO, SiC, SiGe, GaN, Ga2O3, etc.), but may be preferably implemented as a carrier wafer containing silicon (Si). However, the present invention is not limited thereto.

The first support member 110 may facilitate the release of heat generated from the light emitting device 100 to improve the thermal stability of the light emitting device 100.

An adhesive layer (not shown) for adhering the first support member 110 and the light emitting semiconductor structure 150 or the first electrode 120 may be stacked on the first support member 110.

The adhesive layer includes all metal materials having adhesion, and may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta, but is not limited thereto. Do not. The bonding layer may be formed by bonding different bonding layers, and may be formed in multiple layers, but is not limited thereto.

An active layer 156 is disposed on the first support member 110 between the first semiconductor layer 152, the second semiconductor layer 154, and the first and second semiconductor layers 152 and 154. The light emitting semiconductor structure 150 including the light emitting structure 150a and the semiconductor structure 150b of the zener region B may be formed.

Here, the light emitting structure 150a will be described as having a configuration in which the active layer 156 is interposed between the first semiconductor layer 152, the second semiconductor layer 154, and the first and second semiconductor layers 152 and 154. . Of course, the semiconductor structure 150b will also be described as having the same configuration.

The first semiconductor layer 152 may be implemented as an n-type semiconductor layer, the n-type semiconductor layer is In _x Al _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x A semiconductor material having a compositional formula of + y ≦ 1) may be selected from InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, and the like, and n-type dopants such as Si, Ge, Sn, and the like may be doped.

The active layer 156 may be formed on the first semiconductor layer 152.

The active layer 156 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of a group 3 to 5 element. In the case where the active layer 156 is formed of a quantum well structure, for example, a well having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) It can have a single or quantum well structure having a layer and a barrier layer having a composition formula of In _a Al _b Ga _{1 -ab} N (0 ≦ a ≦ ₁ , 0 ≦ b ≦ ₁ , 0 ≦ a + b ≦ 1). The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer. A conductive clad layer may be formed on or under the active layer 156. The conductive clad layer may be formed of an AlGaN-based semiconductor, and may have a higher band gap than the band gap of the active layer 133.

The second semiconductor layer 154 may be formed on the active layer 156.

The second semiconductor layer 154 may be implemented as a p-type semiconductor layer to inject holes into the active layer 156. The second semiconductor layer 154 is a semiconductor material having a composition formula of In _x Al _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), for example GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, or the like, and may be doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba.

For example, the first semiconductor layer 152, the active layer 156, and the second semiconductor layer 154 may include, for example, metal organic chemical vapor deposition (MOCVD) and chemical vapor deposition (CVD). It may be formed using a plasma chemical vapor deposition (PECVD; Plasma-Enhanced Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. It is not limited in this respect.

In addition, the doping concentrations of the conductive dopants in the first semiconductor layer 152 and the second semiconductor layer 154 may be uniformly or non-uniformly formed. That is, the structure of the plurality of semiconductor layers may be variously formed, but is not limited thereto.

In addition, unlike the above, the first semiconductor layer 152 may include a p-type semiconductor layer, and the second semiconductor layer 154 may include an n-type semiconductor layer. That is, the positions in which the first semiconductor layer 152 and the second semiconductor layer 154 are formed with respect to the first active layer 156 may be changed.

The light emitting semiconductor structure 150 is divided into a light emitting structure 150a and a semiconductor structure 150b spaced apart from the light emitting structure 150a. The size of the light emitting structure 150a is based on the brightness required by the light emitting device 100. It can be formed in various ways.

The first electrode 120 and the reflective layer 111 may be included between the first support member 110 and the first semiconductor layer 152 of the light emitting structure 150a.

The first electrode 120 is formed such that the light emitting structure 150a and a portion of the region overlap vertically, and the width of the first electrode 120 is wider than that of the light emitting structure 150a.

The first electrode 120 may include a conductive material. For example, nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), tantalum (Ta), and molybdenum (Mo), titanium (Ti), silver (Ag), tungsten (W), copper (Cu), chromium (Cr), palladium (Pd), vanadium (V), cobalt (Co), niobium (Nb), zirconium It may be formed of at least one of (Zr), indium tin oxide (ITO), aluminum zinc oxide (AZO), and indium zinc oxide (IZO), but is not limited thereto.

The reflective layer 111 may be formed between the first support member 110 and the first electrode 120. The width of the reflective layer 111 is not limited, but may be preferably wider than the width of the light emitting structure 150a.

The reflective layer 111 emits light by reflecting the light toward the upper direction of the light emitting device 100 when a part of the light generated from the active layer 156 of the light emitting structure 150a is directed toward the first support member 110. The light extraction efficiency of the device 100 can be improved.

Accordingly, the reflective layer 111 is a material capable of reflecting light, for example, silver (Ag), nickel (Ni), aluminum (Al), rhodium (Rh), palladium (Pd), iridium (Ir), Ruthenium (Ru), magnesium (Mg), zinc (Zn), platinum (Pt), gold (Au), hafnium (Hf) and may be formed of one or a plurality of layers of a material consisting of two or more alloys thereof In addition, the materials having different refractive indices may be formed in a multilayer structure, and may be formed of a material other than the above-described material, without being limited thereto.

In order to prevent electrical short between the light emitting structure 150a and the semiconductor structure 150b, the first insulating layer 131 may be formed on the side surface of the semiconductor structure 150b facing the light emitting structure 150a. In other words, the first electrode 120 is formed in all or some regions of the spaced space between the light emitting structure 150a and the semiconductor structure 150b. In addition, when the first insulating layer 131 is formed in all regions, some regions of the first insulating layer 131 on which the wiring 180 is to be formed may be etched. However, the present invention is not limited thereto.

The first insulating layer 131 may be extended between the first supporting member 110 and the first semiconductor layer 152 of the semiconductor structure 150b.

In other words, the first insulating layer 131 is for electrically disconnecting between the first support member 110 and the semiconductor structure 150b. In addition, the first insulating layer 131 may be formed to overlap the semiconductor structure 150b.

The first insulating layer 131 includes a non-conductive organic material or an inorganic material. Preferably, the first insulating layer 131 may be formed of, for example, urethane, polyester, or acrylic, and may be formed of a single layer or a multilayer structure. It may be empty space. However, it is not limited thereto.

In addition, the light emitting semiconductor structure 150 may further include a wiring 180 and a third insulating layer 133 surrounding the wiring 180.

The wiring 180 may be connected to the second semiconductor layer 154 of the light emitting structure 150a to be connected to the first semiconductor layer 152 of the semiconductor structure 150b. In other words, the wiring 180 electrically connects the second semiconductor layer 154 of the light emitting structure 150a and the first semiconductor layer 152 of the semiconductor structure 150b.

In addition, in FIG. 2, the wiring 180 is connected to the top surface of the second semiconductor layer 154 of the light emitting structure 150a to expose the first semiconductor layer 152 of the semiconductor structure 150b exposed by a predetermined etching method. Although illustrated as being connected to the upper surface, the present invention is not limited thereto, and the second semiconductor layer 154 of the light emitting structure 150a and the first semiconductor layer 152 of the semiconductor structure 150b are connected to each other. The shape or arrangement of the semiconductor structure 150b in the spaced apart space does not matter. For example, the wiring 180 may be connected to the side of the second semiconductor layer 154 of the light emitting structure 150a to be connected to the side of the first semiconductor layer 152 of the semiconductor structure 150b.

In addition, the wiring 180 may be made of a conductive metal material and a conductive non-metal material. For example, nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), and tantalum (Ta) ), Molybdenum (Mo), titanium (Ti), silver (Ag), tungsten (W), copper (Cu), chromium (Cr), palladium (Pd), vanadium (V), cobalt (Co), niobium (Nb) ), Zirconium (Zr), indium tin oxide (ITO), aluminum zinc oxide (AZO), and at least one of indium zinc oxide (IZO). However, it is not limited thereto.

The third insulating layer 133 may be formed to surround the outer circumferential surface of the wiring 180. Accordingly, the third insulating layer 133 prevents the wire 180 from being cut from external shock and prevents electrical short.

The third insulating layer 133 may be formed on the outer circumferential surface thereof according to the shape of the wiring 180 described above. In other words, the third insulating layer 133 is formed on the outer circumferential surface of the wiring 180, and the first insulating layer 131 is electrically shorted in the space between the light emitting structure 150a and the semiconductor structure 150b except for this. It is desirable to be formed to prevent.

In addition, although the wiring 180 and the third insulating layer 133 may be formed in contact or spaced apart from each other, the wiring 180 and the third insulating layer 133 may be formed in contact with each other.

The second electrode 190 may be formed on the second semiconductor layer 154 of the light emitting structure 150a.

The second electrode 190 is disposed on the second semiconductor layer 154 of the light emitting structure 150a and is connected to a power source by wire bonding to receive power.

The second support member 170 may be further included on the semiconductor structure 150b.

In addition, the second support member 170 is disposed on the first electrode 120 exposed from the upper portion of the semiconductor structure 150b to the outer circumference of the light emitting structure 150a so that the cavity 160 is formed on the light emitting structure 150a. It can be formed in connection. That is, the first electrode 120 and the second semiconductor layer 154 of the semiconductor structure 150b may be formed except for the upper region of the light emitting structure 150a.

In other words, the second support member (or upper portion) of the semiconductor structure 150b of the zener region B and the upper side of the first electrode 120 may have a space (cavity 160) above the light emitting structure 150a. 170 may be formed.

Preferably, a portion of the other side except for the side of the light emitting structure 150a facing the semiconductor structure 150b is etched to expose the first electrode 120, and the second support is disposed on the upper side of the first electrode 120. The member 170 may be formed.

The second support member 170 electrically connects the first electrode 120 and the second semiconductor layer 154 of the semiconductor structure 150b and protects the light emitting semiconductor structure 150.

That is, the second support member 170 may be formed higher than the light emitting structure 150a in the region except for the region on the upper side of the light emitting structure 150a, and the light emitting structure in the region except the partial region on the upper side of the light emitting structure 150a. It may be formed higher than 150a. However, it is not limited thereto.

The shape of the cavity 160 is a quadrangle when viewed from above, but is illustrated in FIG. 1, but is not limited thereto.

The second support member 170 includes a substrate, and includes copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), and carrier wafers (eg, Si, Ge , GaAs, ZnO, SiC, SiGe, GaN, Ga2O3, etc.), but may be preferably implemented as a carrier wafer containing silicon (Si). However, the present invention is not limited thereto.

Therefore, when the second support member 170 is formed of a carrier wafer including silicon (Si), it is not necessary to use a thick PR (photo resist), which is difficult to control the process during pattern formation in a subsequent coating process, and the pattern process is omitted. There is an advantage to this.

In addition, a conductive adhesive layer 171 may be formed between the second support member 170 and the second semiconductor layer 154 of the semiconductor structure 150b except for the region of the light emitting structure 150a. have.

The conductive adhesive layer 171 may be any material having adhesion and conductivity, but preferably Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si , Al-Si, Ag-Cd, Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu-Si, Ag-Cd-Cu, Cu -Sb, Cd-Cu, Al-Si-Cu, Ag-Cu, Ag-Zn, Ag-Cu-Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu , Au-Ag-Cu, Cu-Cu ₂ O, Cu-Zn, Cu-P, Ni-B, Ni-Mn-Pd, Ni-P and Pd-Ni, and may include any one of Do not.

A second insulating layer 132 may be included between the second support member 170 and the side surface of the light emitting structure 150a.

The second insulating layer 132 prevents electrical short between the second supporting member 170, the active layer 156 of the light emitting structure 150a, and the second semiconductor layer 154.

The second insulating layer 132 may be preferably formed on at least the side of the second semiconductor layer 154 and the side of the active layer 156 of the semiconductor structure 150b, and more preferably the light emitting structure 150a. It may be formed higher than the height. However, it is not limited thereto.

Therefore, as the Zener mounted light emitting device, the light emitting device can be more effectively protected from electrostatic discharge (ESD) due to the second supporting member, and the working process is easy due to the thick second supporting member in the coding process.

3 is a cross-sectional view illustrating a light emitting device according to another embodiment.

Referring to FIG. 3, the light emitting device 100 according to another embodiment may further include an encapsulant 162 or an uneven pattern as compared with the above-described embodiment.

The uneven pattern may be formed on an upper surface of the second semiconductor layer 154 of the light emitting structure 150a. In addition, although not shown in the drawing, it may be formed on the first semiconductor layer 152 or the active layer 156 of the light emitting structure 150a.

The uneven pattern may have a hemispherical shape, a polygonal shape, a triangular pyramid shape, or a nano pillar shape, but is not limited thereto.

The uneven pattern may increase the luminous efficiency of the light emitting device by reducing total reflection of light generated in the active layer 156.

The surface irregularities pattern may be formed by wet etching, dry etching, or laser lift off (LLO), but is not limited thereto.

The encapsulant 162 may be filled in the cavity 160 formed on the light emitting structure 150a.

In addition, although the encapsulant 162 may have various shapes, it is preferable that the encapsulant 162 is formed higher than the second support member 170 and the surface exposed to the outside has a lens shape. However, it is not limited thereto. Therefore, due to the lens shape of the encapsulant 162, it is possible to prevent the total reflection of the light emitted from the light source to increase the light efficiency of the light emitting device.

The encapsulant 162 may be formed of silicon, epoxy, and other resin materials, and may be formed by filling the cavity 160 and then UV or heat curing the same.

The encapsulant 162 may include a phosphor, and a type of phosphor may be selected based on a wavelength of light emitted from the active layer 156 to allow the light emitting device 100 to realize white light.

The phosphor included in the encapsulant 162 may be a blue light emitting phosphor, a cyan light emitting phosphor, a green light emitting phosphor, a yellow green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, or an orange light emitting phosphor according to the wavelength of light emitted from the active layer 156. One of, and a red light emitting phosphor can be applied.

That is, the phosphor may be excited by the light having the first light emitted from the active layer 156 to generate the second light. For example, when the light generated in the active layer 156 is blue and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and the blue light and blue light generated in the active layer 156 may be used. As the yellow light generated by excitation is mixed, the light emitting device 100 may provide white light.

Similarly, when the light generated in the active layer 156 is green, when a magenta phosphor or a mixture of blue and red phosphors is used, when the light generated in the active layer 156 is red, a cyan phosphor or a blue and green phosphor For example, the case may be used in combination.

Such phosphor may be a known phosphor such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

In addition, the encapsulant 162 may include a light diffuser.

The light diffuser is any one of titanium dioxide TiO ₂ ), barium oxide (BaO), silicon dioxide (SiO ₂ ), magnesium oxide (MgO) and Y ₂ O ₃ , which is a white metal oxide, or titanium dioxide TiO ₂ ) At least two or more of barium (BaO), silicon dioxide (SiO ₂ ), magnesium oxide (MgO), and Y ₂ O ₃ may be mixed.

4 to 9 are process flowcharts showing the manufacturing process of the light emitting device according to the embodiment.

Referring to FIG. 4, the light emitting device 100 may grow the light emitting semiconductor structure 150 on the growth substrate 101.

The growth substrate 101 may be selected from the group consisting of sapphire substrate (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, GaAs, and the like. A buffer layer (not shown) may be formed between the light emitting semiconductor structures 150.

The buffer layer may have a form in which Group 3 and Group 5 elements are combined, or may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and dopants may be doped.

An undoped semiconductor layer (not shown) may be formed on the growth substrate 101 or the buffer layer (not shown), and either or both of the buffer layer and the undoped semiconductor layer (not shown) may be formed. It may or may not be formed, but is not limited to such a structure.

The light emitting structure 160 including the first semiconductor layer 152, the second semiconductor layer 154, and the active layer 156 may be disposed on the growth substrate 101, and the first semiconductor layer 152 and the active layer ( 156 and the second semiconductor layer 154 are the same as described above with reference to FIG. 1, and thus will be omitted. The growth method is as described above.

Referring to FIG. 5, the light emitting semiconductor structure 150 is divided into a light emitting structure 150a and a semiconductor structure 150b, that is, the light emitting semiconductor structure 150 is positioned so that the semiconductor structure 150b is spaced apart from the light emitting structure 150a. ) Is etched by a predetermined etching method.

Thereafter, the semiconductor structure 150b is etched so that the first semiconductor layer 152 of the semiconductor structure 150b is exposed, and the semiconductor structure 150b is connected to the first semiconductor layer 152 of the semiconductor structure 150b so as to expose the light emitting structure 150a. The wiring 180 may be disposed to be connected to the second semiconductor layer 154.

Thereafter, the outer circumferential surface of the wiring 180 may be wrapped by the third insulating layer 133 to prevent an electrical short.

Thereafter, the first insulating layer 131 may be formed in the spaced space between the light emitting structure 150a and the semiconductor structure 150b.

Subsequently, the outer surface of the light emitting structure 150a except for the side facing the semiconductor structure 150b is viewed to expose a part of the growth substrate 1101.

The etching method may be wet etching, dry etching, or laser lift off (LLO), but is not limited thereto.

Referring to FIG. 6, a second support member 170 may be formed on the light emitting semiconductor structure 150 and the growth substrate. In addition, a conductive adhesive layer 171 may be formed between the light emitting semiconductor structure 150 and the second support member 170.

Referring to FIG. 7, the growth substrate 101 may then be removed. The method of removing the growth substrate 101 may include, but is not limited to, an LLO process.

Referring to FIG. 8, a first electrode 120 may be formed on the first semiconductor layer 152 of the light emitting structure 150a.

Thereafter, the reflective layer 111 may be formed on the first electrode 120. The reflective layer 111 may be formed larger or smaller than the first electrode 120, but is not limited thereto.

The first insulating layer 131 may extend on the semiconductor structure 150b.

Thereafter, the first support member 110 may be formed on the first electrode 120 and the first insulating layer 131.

Referring to FIG. 9, the second support member 170 is formed by a predetermined etching method so that the second semiconductor layer 154 of the light emitting structure 150a is exposed so that the cavity 160 is formed on the light emitting structure 150a. Can be removed. In this case, the conductive adhesive layer 171 may be removed as is formed.

Thereafter, a second electrode 190 may be formed on the second semiconductor layer 154 of the light emitting structure 150a.

10 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 10, the light emitting device package 300 may include a body 320, a first electrode layer 331 and a second electrode layer 332 provided on the body 320, and a first electrode layer installed on the body 320. 331 and a light emitting device 100 according to an embodiment electrically connected to the second electrode layer 332, and a molding member 340 for sealing the light emitting device 100.

The body 320 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first electrode layer 331 and the second electrode layer 332 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first electrode layer 331 and the second electrode layer 332 can increase the light efficiency by reflecting the light generated from the light emitting device 100, and discharges heat generated from the light emitting device 100 to the outside It can also play a role.

The light emitting device 100 may be installed on the body 320 or on the first electrode layer 331 or the second electrode layer 332.

The light emitting device 100 may be electrically connected to the first electrode layer 331 and the second electrode layer 332 by any one of a wire method, a flip chip method, or a die bonding method.

The molding member 340 may seal and protect the light emitting device 100. In addition, the molding member 340 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

The light emitting device package 300 may be mounted as at least one or a plurality of light emitting devices of the above-described embodiments, but is not limited thereto.

The light emitting device package 300 is resistant to ESD and structurally stable.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100: light emitting element 110: first support member
111: reflective layer 120: first electrode
131: first insulating layer 132: second insulating layer
152: first semiconductor layer 154: second semiconductor layer
156: active layer 160: cavity
170: second support member 180: wiring
190: second electrode

Claims (14)

A first support member;
A light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed on the first support member;
A semiconductor structure separated with the light emitting structure and the first insulating layer interposed therebetween;
Wiring connected to a second semiconductor layer of the light emitting structure and to a first semiconductor layer of the semiconductor structure;
A first electrode disposed between the first support member and the first semiconductor layer of the light emitting structure;
A second electrode on the second semiconductor layer of the light emitting structure; And
A light emitting device comprising a second support member formed on the semiconductor structure. The method of claim 1,
The second supporting member is formed on the first electrode exposed from the upper portion of the semiconductor structure to the outer periphery of the light emitting structure so that the cavity is formed on the light emitting structure,
And a second insulating layer formed on at least a side surface of the second semiconductor layer and a side surface of the active layer between the second support member and the side surface of the light emitting structure. The method of claim 2,
The outer circumferential surface of the wiring further comprises a third insulating layer for preventing an electrical short. The method of claim 2,
The first insulating layer,
The light emitting device is formed to extend between the semiconductor structure and the first support member. The method of claim 2,
A light emitting device comprising a reflective layer between the first support member and the first electrode. The method of claim 2,
And a conductive adhesive layer between the first electrode and the second semiconductor layer of the semiconductor structure except for the region of the second support member and the light emitting structure. The method of claim 2,
And a concave-convex pattern is formed on an upper surface of the second semiconductor layer of the light emitting structure. The method of claim 2,
The second support member is a light emitting device which is a carrier wafer containing silicon (Si). The method of claim 3,
The wiring is in contact with the third insulating layer. The method of claim 2,
The cavity is a light emitting device is filled by the encapsulant. The method of claim 10,
The encapsulant comprises a phosphor. The method of claim 10,
The encapsulant comprises a light diffusing material. The method of claim 10,
The encapsulant is formed higher than the second support member, and the surface exposed to the outside has a lens shape. A light emitting device package comprising the light emitting device of any one of claims 1 to 13.

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