KR101930307B1 - Light emitting module - Google Patents

Light emitting module Download PDF

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Publication number
KR101930307B1
KR101930307B1 KR1020110087322A KR20110087322A KR101930307B1 KR 101930307 B1 KR101930307 B1 KR 101930307B1 KR 1020110087322 A KR1020110087322 A KR 1020110087322A KR 20110087322 A KR20110087322 A KR 20110087322A KR 101930307 B1 KR101930307 B1 KR 101930307B1
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KR
South Korea
Prior art keywords
light emitting
disposed
light
substrate
common electrode
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Application number
KR1020110087322A
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Korean (ko)
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KR20130024087A (en
Inventor
유병수
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020110087322A priority Critical patent/KR101930307B1/en
Publication of KR20130024087A publication Critical patent/KR20130024087A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

A light emitting structure including a substrate, a plurality of light emitting regions arranged on the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers, And a plurality of electrodes between the substrate and each of the plurality of light emitting regions, and a common electrode on the plurality of light emitting regions.

Description

A light emitting module

An embodiment relates to a light emitting module.

BACKGROUND ART [0002] Light emitting diodes and laser diodes, which are typical examples of light emitting devices using semiconductor materials of Group 3-5 or 2-6 group semiconductors, are widely used in various fields such as red, green, blue, and ultraviolet Color can be realized, and a white light ray having high efficiency can be realized by using a fluorescent material or combining colors.

Such a light emitting diode (LED) has advantages of low power consumption, semi-permanent lifetime, quick response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode has been increasingly used as a light source for various lamps used in indoor / outdoor, a liquid crystal display, a display board, and a streetlight.

Meanwhile, such a light emitting diode is also applied to a headlamp for a vehicle. In the light emitting device package of Publication No. 10-2011-0060074, a plurality of light emitting elements are disposed on a package substrate and a package substrate, However, in the case of using a plurality of light emitting devices, a dark portion may be generated between a plurality of light emitting devices, and power consumption may be increased.

Embodiments provide a light emitting module that minimizes occurrence of dark portions and reduces power consumption.

A light emitting module according to an embodiment includes a substrate, a plurality of light emitting regions disposed on the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers, A plurality of electrodes between the substrate and each of the plurality of light emitting regions, and a common electrode on the plurality of light emitting regions.

A light emitting module according to an embodiment includes a substrate, a light emitting structure disposed on the substrate and partitioned into a plurality of light emitting regions, a plurality of electrodes between the substrate and the plurality of light emitting regions, and a common electrode on the light emitting structure, Since each region can emit light individually, there is an advantage that power consumption can be reduced.

In addition, the predetermined distance between the plurality of light-emitting regions is set to 10 占 퐉 to 100 占 퐉, thereby minimizing occurrence of dark portions.

1 is an assembled perspective view illustrating a light emitting module according to an embodiment.
2 is an exploded perspective view showing the light emitting module shown in Fig.
3 is an exploded perspective view of the light emitting device shown in Fig.
4 is a top view showing the light emitting module shown in Fig.
5 is a cross-sectional view of the light emitting module shown in FIG. 4 taken along the line P1-P1.
6 is a cross-sectional view of the light emitting module shown in FIG. 4 taken along the line P2-P2.
7 is a schematic view showing a lighting device including the light emitting module shown in Fig.

In the description of the present embodiment, in the case where one element is described as being formed "on or under" of another element, the upper (upper) or lower (lower) on or under includes both the two elements being directly contacted with each other or one or more other elements being indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

In the drawings, the thickness and size of each layer are exaggerated, omitted, or schematically illustrated for convenience and clarity. Therefore, the size of each component does not entirely reflect the actual size.

Further, the angles and directions mentioned in the description of the structure of the light emitting module in the present specification are based on those shown in the drawings. In the description of the structure of the light emitting module in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

FIG. 1 is an assembled perspective view illustrating a light emitting module according to an embodiment of the present invention, and FIG. 2 is an exploded perspective view illustrating a light emitting module shown in FIG.

Referring to FIGS. 1 and 2, the light emitting module 100 may include a light emitting device 110 and a body 150.

Here, the light emitting device 110 may include a substrate 120 and a light emitting structure 130.

In the embodiment, the light emitting element 110 is described as having a vertical structure, but it is not limited thereto.

The substrate 120 may be formed of a conductive substrate or an insulating substrate and may be formed of a material such as aluminum nitride (AlN), sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, , And Ga 2 O 3 .

The substrate 120 may be wet-cleaned to remove impurities on the surface, and the substrate 120 may be patterned with a light-extracting pattern (Patterned SubStrate, PSS) to enhance the light extraction effect, Do not.

In addition, the substrate 120 may be made of a material that facilitates the release of heat to improve the thermal stability.

On the other hand, an anti-reflection layer (not shown) for improving light extraction efficiency may be disposed on the substrate 120. The anti-reflection layer is called an anti-reflective coating layer, and basically, And uses the interference phenomenon between them. That is, the phase of the light reflected from the other interface is shifted by 180 degrees so as to cancel each other, so that the intensity of the reflected light is weakened. However, the present invention is not limited thereto.

A buffer layer (not shown) may be disposed on the substrate 120 to mitigate lattice mismatch between the substrate 120 and the light emitting structure 130 and to facilitate growth of the plurality of semiconductor layers.

The light emitting structure 130 may include an active layer 136 between the first semiconductor layer 132, the second semiconductor layer 134, and the first and second semiconductor layers 132 and 134, (Not shown) spaced apart from each other.

At this time, the plurality of light emitting regions are regions where the second semiconductor layer 134 and the active layer 136 are separated from each other with the first semiconductor layer 132 as a common base, and the plurality of light emitting regions can emit light individually .

When the first semiconductor layer 132 is implemented as an n-type semiconductor layer, for example, In x Al y Ga 1 -xy N (0? X? 1, 0? Y? 1, 0? X + For example, an n-type dopant such as Si, Ge, Sn, Se, or Te may be doped, for example, a semiconductor material having a composition formula of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, .

The active layer 136 may be disposed under the first semiconductor layer 132 and the active layer 136 may be formed using a compound semiconductor material of Group 3-VI elements, such as a single or multiple quantum well structure, a quantum- ) Structure, or a quantum dot (Quantum Dot) structure.

The active layer 136 is a well having a composition formula of the case formed of a quantum well structure, for example, In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) Layer and a barrier layer having a composition formula of In a Al b Ga 1 -a- b N (0? A? 1 , 0? B? 1 , 0? A + b? 1) have. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive cladding layer (not shown) may be disposed on and / or below the active layer 136. The conductive cladding layer may be formed of an AlGaN-based semiconductor and may have a band gap It can have a large bandgap.

A second semiconductor layer 134 may be disposed under the active layer 136. The second semiconductor layer 134 may be formed of a p-type semiconductor layer. In the case of a p-type semiconductor layer, for example, In x Al y Ga 1 -x- y N (0≤x≤1 , 0 ≤y≤1, 0≤x + y≤1) , for a semiconductor material, for example, having a compositional formula of GaN, AlN, AlGaN, InGaN, InN, InAlGaN , AlInN and the like, and a p-type dopant such as Mg, Zn, Ca, Sr, or Ba can be doped.

The first semiconductor layer 132, the active layer 136, and the second semiconductor layer 134 may be formed by, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD) A plasma enhanced chemical vapor deposition (PECVD), a molecular beam epitaxy (MBE), and a hydride vapor phase epitaxy (HVPE) It is not limited thereto.

In addition, the doping concentrations of the n-type and p-type dopants doped in the first semiconductor layer 132 and the second semiconductor layer 134 can be uniformly or non-uniformly formed. That is, the structure of the plurality of semiconductor layers may be variously formed, but the structure is not limited thereto.

The first semiconductor layer 132 may be a p-type semiconductor layer and the second semiconductor layer 134 may be an n-type semiconductor layer. Accordingly, the light emitting structure 130 may include an NP junction, a PN junction, And a PNP junction structure.

The first semiconductor layer 132 shown in FIGS. 1 and 2 is an n-type semiconductor layer and the second semiconductor layer 134 is a p-type semiconductor layer.

Here, the common electrode 128 may be disposed on the first semiconductor layer 120 of the light emitting structure 130.

A light transmitting electrode layer (not shown) of conductive material may be disposed between the light emitting structure 130 and the common electrode 128 or may be disposed on the light emitting structure 130 and the common electrode 128 may be disposed on the light emitting structure 130 (Not shown) of a non-conductive material can be disposed, including, but not limited to, an opening that can be disposed.

A plurality of electrodes 121 to 124 may be disposed between the second semiconductor layer 134 and the substrate 120 of each of the plurality of light emitting regions of the light emitting structure 130.

Here, the plurality of electrodes 121 to 124 may be spaced apart from each other so as not to be electrically connected to each other.

The plurality of electrodes 121 to 124 and the common electrode 128 are formed of indium (In), tungsten (Co), silicon (Si), germanium (Ge), gold (Au), palladium (Pd) (Ru), rhenium (Re), magnesium (Mg), zinc (Zn), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), tungsten (W) , At least one of silver (Ag), chromium (Cr), molybdenum (Mo), niobium (Nb), aluminum (Al), nickel (Ni), copper (Cu) and titanium tungsten alloy (WTi) But it is not limited thereto.

The light emitting device 110 will be described in detail below.

The body 150 includes a base portion 152 formed with a first cavity s1 in which the light emitting device 110 is disposed and a base portion 152 disposed around the first cavity s1 of the base portion 152, A partition wall portion 154 forming the second cavity s2 and an insulation portion 156 between the base portion 152 and the partition wall portion 154 may be included.

The base portion 152 may be made of a conductive metal or may be a nonconductive material such as aluminum (Al), copper (Cu), silver (Ag), platinum (Pt), rhodium (Rh) ), Palladium (Pd), and chromium (Cr), or an alloy including the same, and may be made of FR4 material, but is not limited thereto.

A plurality of electrode patterns 161 to 164 electrically connected to the plurality of electrodes 121 to 124 and a common electrode 128 electrically connected to the common electrode 128 are formed between the base portion 152 and the insulating portion 156, And a copper foil portion 160 including a pattern 168. [

At this time, if the base 152 is made of a conductive material, for example, a metal such as aluminum (Al) or copper (Cu), an insulating portion (not shown) is disposed between the base portion 152 and the thin portion 160 And is not limited to this.

That is, when using a conductive metal material, the insulating portion may be disposed on the base portion 152 to prevent shorting of the thin portion 160 in order to increase heat dissipation characteristics of the base portion 152 have.

The partition wall portion 154 may be disposed around the outer periphery of the first cavity s1 to form the base portion 152 and the second cavity s2.

At this time, a step may be formed on the upper part of the partition wall 154.

Here, the body 150 may include a cover portion (not shown) disposed at a stepped portion of the upper portion of the partition wall portion 154 to cover the second cavity s2. Explain.

At this time, the partition wall portion 154 may be made of a ceramic material, but is not limited thereto.

The insulating portion 156 is formed by etching the first to fourth portions x1 to x4 to form a hole (not shown), wherein the first portion x1 corresponds to the first cavity s1, and the second portion x2 exposes one side of the plurality of electrode patterns 161 to 164 electrically connected to the plurality of electrodes 121 to 124 while the third portion x3 exposes one side of the common electrode The fourth portion x4 exposes the other side of the common electrode pattern 168 and the plurality of electrode patterns 161 to 164 exposes one side of the common electrode pattern 168 electrically connected to the common electrode pattern 128 .

At this time, the other side of the plurality of electrode patterns 161 to 164 and the common electrode pattern 168 exposed by the fourth portion x4 of the insulating portion 154 is connected to a connector (not shown) Can be supplied.

3 is an exploded perspective view of the light emitting device shown in Fig.

Fig. 3 briefly explains or omits the contents described in Fig. 1 and Fig.

3, the light emitting device 110 may include a light emitting structure 130 including first to fourth light emitting regions bp1 to bp4 and a substrate 120 having the light emitting structure 130 disposed thereon .

At least one of the first width b1, the first height d1 and the first length w1 of the first to fourth light emitting regions bp1 to bp4 may be the same, And does not limit it.

That is, at least one of the first to fourth light emitting regions bp1 to bp4 may be different from at least one of the first width b1, the first height d1 and the first length w1, At this time, the width and the length of the active layer 136 of the first to fourth light emitting regions bp1 to bp4 may be different from each other, but are not limited thereto.

In other words, the first to fourth light emitting regions bp1 to bp4 may have different amounts of light emission depending on the width and length of the active layer 124.

Referring again to FIG. 3, the first to fourth light emitting regions bp1 to bp4 may be separated by a predetermined distance ji.

That is, each of the first to fourth light emitting regions bp1 to bp4 should not be connected to each other in order to emit light individually, and the predetermined distance j1 may be 10 占 퐉 to 100 占 퐉.

In this case, when the predetermined distance j1 is less than 10 m, the probability of electrically connecting the first to fourth light emitting regions bp1 to bp4 in the light emitting structure 130 is very high. When the predetermined distance j1 is greater than 100 m, To the fourth luminescent regions (bp1, bp4) can be increased.

Here, on the substrate 120, first to fourth electrodes 121 to 124 electrically connected to the first to fourth light emitting regions bp1 to bp4 may be disposed.

At this time, a bonding layer (not shown) may be disposed between the substrate 120 and each of the first to fourth electrodes 121 to 124, and the bonding layer may be disposed between the first to fourth electrodes 121 to 124, 124 may be formed to minimize the electromigration phenomenon in which atoms move by the electric field.

In addition, the bonding layer may be formed using a metal material having excellent adhesion to the substrate 120, and may include a barrier metal, a bonding metal, or the like. For example, the bonding layer may include Ti, Au, Sn, Ni, Cr, Ga , In, Bi, Cu, Ag, and Ta, but the present invention is not limited thereto.

The bonding layer may be formed by bonding different metal materials to form a plurality of layers, but is not limited thereto.

The first to fourth electrodes 121 to 124 and the common electrode 128 may include at least one of a reflective layer (not shown) and a transparent electrode layer (not shown), and the reflective layer and the transparent electrode layer may be subjected to a simultaneous firing process And the bonding force can be excellent.

The reflective layer may be formed of one or more layers selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, .

The light-transmitting electrode layer may contain at least one of Ni, Pt, Ru, Ir, Rh, Ta, Mo, Ti, Ag, W, Cu, Cr, Pd, V, Co, Nb and Zr, And may include at least one.

The distance j2 between the first to fourth electrodes 121 to 124 may be equal to or longer than the predetermined distance j1 and is not limited thereto.

The first to fourth electrodes 121 to 124 may include a first portion (not shown) and a first portion overlapping the first to fourth light emitting regions bp1 to bp4, And a second portion (not shown) electrically connected to the first to fourth electrode patterns 161 to 164.

The first portion may have a second width b2 and a second length w2 wherein the width b2 and the second length w2 are greater than the first width b1 and the first length w1 ), But it is not limited thereto.

The second portion may have a third width b3, and the third width b3 may be equal to or smaller than the second width b3, but is not limited thereto.

4 is a cross-sectional view of the light emitting module shown in FIG. 4 in the direction of P1-P1, and FIG. 6 is a cross-sectional view of the light emitting module shown in FIG. Sectional view taken along line II-II of FIG.

4 to 6, the light emitting module 100 may include a substrate 120 on which the light emitting device 110 and the light emitting device 110 are disposed, and a body 150 on which the substrate 120 is disposed .

The light emitting module 100 includes a common electrode 128 disposed on the light emitting structure 120 and a common electrode pattern 168 disposed on the base portion 152 of the body 150 by a wire y They can be electrically connected to each other.

The light emitting module 100 includes first to fourth electrodes 121 to 124 in which the light emitting structure 120 is disposed and first to fourth electrode patterns 121 to 124 disposed on the base portion 152 of the body 150. [ 161 to 164 may be electrically connected to each other by a wire y.

In the body 150 shown in Figs. 4 to 6, the base portion 152 is made of a conductive metal.

That is, the body 150 includes first, second, third, and fourth electrode patterns 161 to 164 on the base portion 152, the first insulating portion 157 and the first insulating portion 157 on the base portion 152, The insulating portion 156 and the partition portion 154 on the insulating portion 156 on the copper thin portion 160, the copper thin portion 160 and the first insulating portion 157 including the pattern 168. [

Although the first insulation part 157 is not shown in FIGS. 1 to 3, since the base part 152 is a conductive material in FIGS. 4 to 6, the first insulation part 157 may be an essential construction.

In this case, the light emitting device 110 may be disposed in the first cavity s1 of the body 150, and the body 150 may be disposed between the light emitting device 110 and the base portion 152 of the first cavity s1 And a bonding portion 158.

Here, the bonding portion 158 may be a highly thermally conductive adhesive or an adhesive film applied on the base portion 152 of the first cavity s1, and the adhesive or the adhesive film may include AuSn.

The light emitting device 110 may include an insulating member 139 between the first to fourth light emitting regions bp1 to bp4 of the light emitting structure 120. [

The insulating member 139 may include at least one of aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), and silicon carbide (SiC).

The insulating member 139 may fill the spaces between the first to fourth light emitting regions bp1 to bp4 and the first to fourth electrodes 121 to 124 or may fill the spaces between the first to fourth light emitting regions bp1 bp4) and the first to fourth electrodes 121 to 124, but the present invention is not limited thereto.

In addition, a reflective member (not shown) may be disposed on the inner and outer surfaces of the insulating member 139, but the present invention is not limited thereto.

The body 150 may include a cover portion 159 disposed at a stepped portion on the upper portion of the partition wall portion 154.

The cover portion 159 may be at least one of a light-transmitting film and a glass cover, and in the embodiment, the cover portion 159 is a glass cover.

The cover portion 159 may include at least one of a phosphor (not shown), a light diffusing material (not shown), and a light diffusing material (not shown).

The cover part 159 may be formed of a color filter that allows only light having a specific wavelength to pass through the light emitted from the light emitting device 110, and a pattern (not shown) And the shape of the pattern is not limited.

The light emitting module 100 shown in FIGS. 1 to 6 includes a light emitting structure 130 including a plurality of light emitting regions bp1 to bp4 and a plurality of electrodes 121 to 122 disposed in each of the plurality of light emitting regions bp1 to bp4. Emitting regions bp1 to bp4 are individually emitted through the common electrode 128 disposed on the light-emitting structure 130 and the common electrode 128 disposed on the light-emitting structure 130, thereby controlling luminous efficiency and power consumption.

In addition, the light emitting module 100 may be provided with an ESD prevention device such as a Zener diode and a Schottky diode so that a reverse voltage is not supplied to the light emitting device 110, but is not limited thereto.

7 is a schematic view showing a lighting device including the light emitting module shown in Fig.

7, the lighting apparatus 200 is connected to the light emitting module 100, the light emitting module 100 and the connector 220, and supplies driving power (not shown) consumed in the light emitting module 100 And may include a driving module 210.

That is, the connector 220 is connected to the first connector connection part 222 disposed in the light emitting module 100 and the second connector connection part 224 disposed in the driving module 210, (210) can be electrically connected.

The light emitting module 100 is the same as the light emitting module 100 shown in FIGS. 1 to 6, and will be briefly described with reference to FIGS. 1 to 6, or a description thereof will be omitted.

That is, the first connector connection portion 222 is electrically connected to the first to fourth electrode patterns 161 to 164 and the common electrode pattern 168 of the light emitting module 100, and the second connector connection portion 224 is electrically connected to the common electrode pattern 168, Line patterns (not shown) may be independently formed to individually supply the driving power to the first to fourth electrode patterns 161 to 164.

The driving module 210 controls the switch module 212 connected to the second connector connection part 224, the power supply part 214 supplying the driving power to the switch module 212, And a power control unit 216 for supplying and disconnecting the driving power to the plurality of power supply units 100.

The switch module 212 may include a plurality of switch portions (not shown), and the plurality of switch portions may be switched on or off to supply and block the driving power to the first to fourth electrode patterns 161 to 164, respectively. Off operation.

The plurality of switch portions may include at least one of a field effect transistor (FET), a bipolar transistor (BJT), and an op-amp, but is not limited thereto.

The power supply unit 214 may generate the driving power consumed in the light emitting module 100 and may supply the driving power to the light emitting module 100 by the power control unit 216.

The power control unit 216 may individually control the plurality of switch units included in the switch module 212 based on the setting conditions and supply the driving power generated by the power supply unit 214 to the light emitting device 100.

At this time, the setting condition may include at least one of the external brightness and the current time. In addition, the user may cause at least one of the first to fourth light emitting regions bp1 to bp4 of the light emitting module 100 to emit light There is no limitation.

For example, the light emitting module 100 emits light by the first to fourth light emitting regions bp1 to bp4 at intervals of 2 seconds, or the first and second light emitting regions sp1 to bp2 by 6:00 pm to 8:00 pm, And the first to fourth luminescent regions bp1 to bp4 can be controlled to emit light after 8 pm.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It will be appreciated that various modifications and applications are possible without departing from the scope of the present invention. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (26)

Board;
A light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers, the light emitting structure including a plurality of light emitting regions spaced apart from each other by a predetermined distance;
A plurality of electrodes between the substrate and each of the plurality of light emitting regions;
A common electrode on the plurality of light emitting regions;
And a body on which the substrate is disposed,
The body,
A base portion having a first cavity in which the substrate is disposed; And
And a partition wall part forming a second cavity around an outer periphery of the first cavity. The method according to claim 1,
Wherein the plurality of light-
And the second semiconductor layer on which the active layer and the plurality of electrodes are disposed, the second active layer being spaced apart from the first semiconductor layer by the predetermined distance,
The predetermined distance,
10 to 100 [micro] m. The method according to claim 1,
An insulating member disposed between the plurality of light emitting regions;
And a reflection member disposed on the inner side and the side surface of the insulating member,
Wherein the insulating member
Wherein the light emitting module comprises at least one of aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), and silicon carbide (SiC). delete delete The organic light emitting display according to claim 1, wherein at least one of the plurality of light-
At least one of the width and the volume is different,
Wherein at least one of the plurality of light-
Wherein the width of the active layer is different. delete The method according to claim 1,
And a transparent electrode layer between the light emitting structure and the common electrode,
And a light-transmitting support disposed on the light-emitting structure, the light-emitting support including an opening through which the common electrode can be disposed on the light-emitting structure. delete The method according to claim 1,
And a fluorescent layer disposed on the light emitting structure and adjacent to a side surface of the common electrode,
Wherein the fluorescent layer comprises:
And at least one of a side surface and an upper surface of the common electrode. delete The liquid crystal display device according to claim 1, wherein the plurality of electrodes and the common electrode comprise:
(Ru), rhenium (Re), magnesium (Mg), and the like are formed on the surface of the semiconductor substrate 1, which is made of indium (In), tobalt (Co), silicon (Si), germanium (Ge), gold (Au), palladium (Zn), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), tungsten (W), titanium (Ti), silver (Ag), chromium (Cr), molybdenum , At least one of niobium (Nb), aluminum (Al), nickel (Ni), copper (Cu), and titanium tungsten alloy (WTi). The method according to claim 1,
And a bonding layer between the substrate and the plurality of electrodes. delete delete delete [2] The apparatus of claim 1,
And a plurality of electrode patterns and a common electrode pattern disposed on the base portion and connected to the plurality of electrodes and the common electrode,
The base unit includes:
And at least one of Al, Cu, Ag, Pt, Rh, Pd, and Cr,
Wherein the partition wall portion is made of a ceramic material. delete [2] The apparatus of claim 1,
A bonding portion between the base portion of the first cavity and the substrate;
And a cover portion covering the second cavity,
The bonding unit may include:
An adhesive sheet, and an adhesive,
Wherein the bonding portion is made of a metal material,
The cover portion
And at least one of a translucent film and a glass, which is supported on the partition wall portion. delete delete delete delete delete delete delete
KR1020110087322A 2011-08-30 2011-08-30 Light emitting module KR101930307B1 (en)

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Application Number Priority Date Filing Date Title
KR1020110087322A KR101930307B1 (en) 2011-08-30 2011-08-30 Light emitting module

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KR20130024087A KR20130024087A (en) 2013-03-08
KR101930307B1 true KR101930307B1 (en) 2018-12-18

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KR102403335B1 (en) * 2015-08-06 2022-05-27 엘지전자 주식회사 Light Emitting Module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053333A (en) * 1999-08-04 2001-02-23 Hamamatsu Photonics Kk Projector and receiver
JP2001326388A (en) * 2000-05-12 2001-11-22 Rohm Co Ltd Semiconductor light-emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053333A (en) * 1999-08-04 2001-02-23 Hamamatsu Photonics Kk Projector and receiver
JP2001326388A (en) * 2000-05-12 2001-11-22 Rohm Co Ltd Semiconductor light-emitting device

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